APT6030BVRG

APT6030BVR APT6030SVR 600V 21A ® POWER MOS V MOSFET BVR D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching 0.300Ω TO-247 SVR • Avalanche Energy Rated D • Lower Leakage • TO-247 or Surface Mount D3PAK Package G S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT6030BVR_SVR UNIT 600 Volts Drain-Source Voltage 21 Continuous Drain Current @ TC = 25°C Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 298 Watts Linear Derating Factor 2.38 W/°C PD TJ,TSTG 1 84 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR EAS 1 -55 to 150 Amps 21 1 Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy Volts 30 4 mJ 1300 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 600 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 10.5A) TYP MAX Volts 0.300 Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) 25 Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C) 250 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) 2 Ohms µA ±100 nA 4 Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT 5-2004 Characteristic / Test Conditions 050-5517 Rev B Symbol DYNAMIC CHARACTERISTICS Symbol APT6030BVR_SVR Test Conditions Characteristic MIN TYP Ciss Input Capacitance Coss VGS = 0V Output Capacitance VDS = 25V 430 Crss Reverse Transfer Capacitance f = 1 MHz 160 VGS = 10V 150 VDD = 300V 18 ID = 21A @ 25°C 60 Qg 3 Total Gate Charge Qgs Gate-Source Charge Gate-Drain ("Miller") Charge td(on) Turn-on Delay Time VGS = 15V 12 Rise Time VDD = 300V 10 ID = 21A @ 25°C 47 RG = 1.6Ω 8 td(off) Turn-off Delay Time tf Fall Time UNIT 3750 Qgd tr MAX pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol MIN Characteristic / Test Conditions TYP MAX 21 UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -21A, dl S /dt = 100A/µs) 475 ns Q rr Reverse Recovery Charge (IS = -21A, dl S /dt = 100A/µs) 10 µC dv/ Peak Diode Recovery dt dv/ 84 (Body Diode) 1.3 (VGS = 0V, IS = -21A) dt 5 Amps Volts 8 V/ns MAX UNIT THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP 0.42 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 40 4 Starting Tj = +25°C, L = 5.90mH, RG = 25Ω, Peak IL = 21A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID21A di/dt ≤ 700A/µs VR ≤600V TJ ≤ 150°C APT Reserves the right to change, without notice, the specifications and information contained herein. 0.5 0.2 0.05 0.1 0.05 0.01 0.005 Note: 0.02 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-5517 Rev B 5-2004 D=0.5 0.1 0.01 SINGLE PULSE t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.001 10-5 10-4 °C/W 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10 Typical Performance Curves APT6030BVR_SVR 40 VGS=5.5V, 6V, 10V & 15V 32 5V 24 4.5V 16 8 4V ID, DRAIN CURRENT (AMPERES) 16 TJ = +125°C 8 TJ = +25°C TJ = -55°C 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS V GS NORMALIZED TO = 10V @ 0.5 I [Cont.] D 1.4 1.3 1.2 VGS=10V 1.1 VGS=20V 1.0 0.9 0 8 16 24 32 40 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.15 BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 20 15 10 5 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE D = 0.5 I D V GS 0.95 -50 1.2 [Cont.] = 10V 2.0 1.5 1.0 0.5 0.0 -50 1.00 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) I 1.05 0.90 25 2.5 1.10 1.1 1.0 0.9 0.8 5-2004 ID, DRAIN CURRENT (AMPERES) 25 0 4V 0 4 8 12 16 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) 24 4.5V 8 1.5 VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @