APT8DQ60KG

600V 8A APT8DQ60K APT8DQ60KG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE (K) PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode -Motor Controllers -Converters -Inverters • Snubber Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics • Low Noise Switching • PFC • Cooler Operation • Popular TO-220 Package or Surface Mount D2 PAK Package • Higher Reliability Systems • Low Forward Voltage • Low Leakage Current • Avalanche Energy Rated 1 2 2 1 • Increased System Power Density 1 - Cathode 2 - Anode Back of Case - Cathode MAXIMUM RATINGS Symbol VR All Ratings: TC = 25°C unless otherwise specified. Characteristic / Test Conditions APT8DQ60K(G) UNIT 600 Volts Maximum D.C. Reverse Voltage VRRM Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward Current (TC = 128°C, Duty Cycle = 0.5) 8 RMS Forward Current (Square wave, 50% duty) 16 IFSM Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) 110 EAVL Avalanche Energy (1A, 40mH) 20 IF(RMS) TJ,TSTG TL Amps -55 to 175 Operating and StorageTemperature Range 300 Lead Temperature for 10 Sec. mJ °C STATIC ELECTRICAL CHARACTERISTICS VF Characteristic / Test Conditions Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance, VR = 200V MIN TYP MAX IF = 8A 2.0 2.4 IF = 16A 2.5 IF = 8A, TJ = 125°C 1.5 VR = 600V 25 VR = 600V, TJ = 125°C 500 Microsemi Website - http://www.microsemi.com UNIT Volts 16 µA pF 053-4210 Rev K 6-2015 Symbol DYNAMIC CHARACTERISTICS APT8DQ60K(G) Characteristic Symbol Test Conditions MIN TYP MAX UNIT trr Reverse Recovery Time IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C - 14 trr Reverse Recovery Time - 19 Qrr Reverse Recovery Charge - 17 - 2 - 90 ns - 160 nC - 3 - 43 ns - 250 nC - 11 IRRM IF = 8A, diF/dt = -200A/µs VR = 400V, TC = 25°C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM IF = 8A, diF/dt = -200A/µs Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM VR = 400V, TC = 125°C IF = 8A, diF/dt = -1000A/µs Maximum Reverse Recovery Current VR = 400V, TC = 125°C ns nC - - Amps Amps Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC WT Characteristic / Test Conditions MIN Junction-to-Case Thermal Resistance Package Weight Torque Maximum Mounting Torque TYP MAX UNIT 2.7 °C/W 0.07 oz 1.9 g 10 lb•in 1.1 N•m Microsemi reserves the right to change, without notice, the specifications and information contained herein. D = 0.9 2.0 0.7 1.5 1.0 0.5 Note: t1 0.3 0.1 0.05 Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C t2 0.5 053-4210 Rev K 6-2015 2.5 P DM Z JC, THERMAL IMPEDANCE (°C/W) θ 3.0 0 10-5 SINGLE PULSE 10-4 t 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION TYPICAL PERFORMANCE CURVES 15 TJ = 125°C 10 TJ = 25°C 0 TJ = -55°C Qrr, REVERSE RECOVERY CHARGE (nC) 350 T = 125°C J V = 400V R 16A 300 250 8A 200 150 4A 100 50 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 8A 4A 60 40 20 14 12 T = 125°C J V = 400V 16A R 10 8 6 8A 4 4A 2 20 Duty cycle = 0.5 T = 175°C 18 trr J 16 trr IRRM 14 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to X000A/µs) 80 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 5. Reverse Recovery Current vs. Current Rate of Change 0.6 12 10 8 0.4 6 Qrr 4 0.2 2 0.0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 0 0 25 50 75 100 125 150 175 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 50 20 10 0 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 053-4210 Rev K 6-2015 30 40 CJ, JUNCTION CAPACITANCE (pF) 60 0.8 16A 0 Qrr 1.0 R 100 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 3. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage 400 APT8DQ60K(G) T = 125°C J V = 400V 0 0 1.2 trr, REVERSE RECOVERY TIME (ns) TJ = 175°C 20 25 5 120 IF, FORWARD CURRENT (A) 30 APT8DQ60K(G) Vr APT6038BLL diF /dt Adjus t +18V 0V D.U.T. 30µH trr/Q rr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF/dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current 1 Zer o 4 trr - Reverse Recovery Time measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25, IRRM passes through zero. 5 Qrr - Area Under the Curve Defined by IRRM and tRR. Figure 10. Diode Reverse Recovery Waveform Definition TO-220 (K) Package Outline e3 100% Sn Cathode Cathode 053-4210 Rev K 6-2015 4 Anode Dimensions in millimeters and [inches] 5 3 2 0.25 I RRM TYPICAL PERFORMANCE CURVES APT8DQ60K(G) Disclaimer: Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. This product has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or customer's final application. User or customer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the customer’s and user’s responsibility to independently determine suitability of any Microsemi product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/terms-a-conditions. 053-4210 Rev K 6-2015 The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply. This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. 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