APTGT50DDA120T3G

APTGT50DDA120T3G Dual Boost chopper Fast Trench + Field Stop IGBT3 Power Module VCES = 1200V IC = 50A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction 13 14 CR1 CR2 22 7 23 8 Q1 Q2 26 4 27 3 29 15 Features • Fast Trench + Field Stop IGBT3 Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Low stray inductance • High level of integration • Internal thermistor for temperature monitoring 30 31 32 R1 16 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • Each leg can be easily paralleled to achieve a single boost of twice the current capability. • RoHS Compliant All ratings @ Tj = 25°C unless otherwise specified Absolute maximum ratings (Per IGBT) ICM VGE PD RBSOA Collector - Emitter Voltage TC = 25°C TC = 80°C TC = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TJ = 125°C Max ratings 1200 75 50 100 ±20 270 100A @ 1150V Unit V March, 2016 IC Parameter A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTGT50DDA120T3G – Rev 3 Symbol VCES APTGT50DDA120T3G Electrical Characteristics (Per IGBT) Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V ; VCE = 1200V Tj = 25°C VGE =15V IC = 50A Tj = 125°C VGE = VCE , IC = 2mA VGE = 20V, VCE = 0V Min Typ 1.4 1.7 2.0 5.8 5.0 Max Unit 250 2.1 µA 6.5 400 V nA Max Unit V Dynamic Characteristics (Per IGBT) Symbol Characteristic Input Capacitance Cies Crss Reverse Transfer Capacitance QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data RthJC Test Conditions VGE = 0V,VCE = 25V f = 1MHz VGE=±15V, IC=50A VCE=600V Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 50A RG = 18Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 50A RG = 18Ω VGE = ±15V VBus = 600V IC = 50A RG = 18Ω Min Typ 3600 160 pF 0.47 µC 90 30 420 ns 70 90 50 520 ns 90 Tj = 125°C 5 mJ Tj = 125°C 5.5 VGE ≤15V ; VBus = 900V tp ≤ 10µs ; Tj = 125°C 200 Junction to Case Thermal Resistance A 0.45 °C/W Chopper diode ratings and characteristics (Per diode) Min Typ Peak Repetitive Reverse Voltage Reverse Leakage Current DC Forward Current VR=1200V Tc = 70°C IF = 60A IF = 120A IF = 60A VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 60A VR = 800V di/dt =200A/µs Er Reverse Recovery Energy IF = 60A VR = 800V Tj = 125°C 60 2 2.3 1.8 Tj = 25°C 400 Tj = 125°C Tj = 25°C 470 1200 Tj = 125°C 4000 Tj = 125°C 2.2 Max Unit 1200 250 V µA A 2.5 V March, 2016 VRRM IRM IF Test Conditions ns nC mJ di/dt =1000A/µs RthJC Junction to Case Thermal Resistance 0.9 www.microsemi.com °C/W 2-6 APTGT50DDA120T3G – Rev 3 Symbol Characteristic APTGT50DDA120T3G Temperature sensor NTC (see application note APT0406 on www.microsemi.com). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT = R 25 Typ 50 5 3952 4 Max Unit kΩ % K % T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T − ⎟⎟⎥ exp⎢ B 25 / 85 ⎜⎜ ⎢⎣ ⎝ T25 T ⎠⎥⎦ Thermal and package characteristics Symbol VISOL TJ TJOP TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Recommended junction temperature under switching conditions Storage Temperature Range Operating Case Temperature Mounting torque To heatsink M4 Package Weight Min 4000 -40 -40 -40 -40 2 Max 175 TJmax -25 125 125 3 110 Unit V °C N.m g See application note - 1906 - Mounting Instructions for SP3F Power Modules on www.microsemi.com www.microsemi.com 3-6 APTGT50DDA120T3G – Rev 3 March, 2016 Package outline (dimensions in mm) APTGT50DDA120T3G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 100 100 TJ = 125°C TJ=25°C 80 80 VGE=17V VGE=13V 60 VGE=15V 40 40 VGE=9V 20 20 60 IC (A) IC (A) TJ=125°C 0 0 0 0.5 1 1.5 2 VCE (V) 2.5 3 0 3.5 12 TJ=25°C 8 60 E (mJ) IC (A) VCE = 600V VGE = 15V RG = 18Ω TJ = 125°C 10 80 TJ=125°C 40 6 4 Eon Eon TJ=125°C 2 0 0 5 6 7 8 9 10 11 10 12 30 Switching Energy Losses vs Gate Resistance 12 10 Eon 110 100 80 8 7 60 40 Eoff Eoff 6 90 Reverse Bias Safe Operating Area IC (A) 9 70 120 VCE = 600V VGE =15V IC = 50A TJ = 125°C 11 50 IC (A) VGE (V) E (mJ) 3 Eoff 4 20 2 VCE (V) Energy losses vs Collector Current Transfert Characteristics 100 1 VGE=15V TJ=125°C RG=18Ω 20 5 4 0 0 20 40 60 Gate Resistance (ohms) 80 0 400 800 VCE (V) 1200 1600 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration IGBT 0.9 March, 2016 0.4 0.7 0.3 0.5 0.2 0.1 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-6 APTGT50DDA120T3G – Rev 3 Thermal Impedance (°C/W) 0.5 APTGT50DDA120T3G Forward Characteristic of diode 160 VCE=600V D=50% RG=18Ω TJ=125°C TC=75°C 60 ZCS ZVS 40 140 120 100 IC (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 80 TJ=125°C 80 60 20 TJ=25°C 40 hard switching 20 0 0 0 10 20 30 40 IC (A) 50 60 0 70 0.5 1 1.5 VF (V) 2 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.8 Diode 0.9 0.7 0.6 0.5 0.2 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) March, 2016 0.4 www.microsemi.com 5-6 APTGT50DDA120T3G – Rev 3 Thermal Impedance (°C/W) 1 APTGT50DDA120T3G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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