APTM10UM01FAG

APTM10UM01FAG VDSS = 100V RDSon = 1.5mΩ typ @ Tj = 25°C ID = 860A* @ Tc = 25°C Single Switch MOSFET Power Module SK S D DK G S D Features • Power MOS V® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Fast intrinsic diode - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration • AlN substrate for improved thermal performance Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant G Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 100 860 * 640 * 2200 ±30 1.6 2500 100 50 3000 Unit V A V mΩ W A July, 2006 SK mJ * Specification of MOSFET device but output current must be limited to 500A to not exceed a delta of temperature greater than 100°C for the connectors. These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTM10UM01FAG– Rev 1 DK Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control APTM10UM01FAG All ratings @ Tj = 25°C unless otherwise specified IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V,VDS = 100V VGS = 0V,VDS = 80V Min Tj = 25°C Tj = 125°C VGS = 10V, ID = 275A VGS = VDS, ID = 12mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz VSD dv/dt Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery X trr Reverse Recovery Time Qrr Reverse Recovery Charge 1.5 2 Min VGS = 10V VBus = 50V ID =550A Typ 60 23 8.8 2100 Unit Max Unit µA mΩ V nA nF nC 1080 Inductive switching VGS = 15V VBus = 66V ID = 550A R G = 1Ω Inductive switching @ 25°C VGS = 15V, VBus = 66V ID = 550A, R G =1Ω Inductive switching @ 125°C VGS = 15V, VBus = 66V ID = 550A, R G = 1Ω Test Conditions 185 270 600 ns 175 3.3 mJ 3.6 3.65 mJ 3.85 Min Typ Tj = 25°C Max 860* 640* 1.3 5 190 Tj = 125°C 370 Tc = 25°C Tc = 80°C VGS = 0V, IS = - 550A IS = - 550A VR = 66V diS/dt = 600A/µs Max 500 2000 1.6 4 ±450 360 Source - Drain diode ratings and characteristics Symbol IS Typ Tj = 25°C 2.4 Tj = 125°C 10.2 Unit A V V/ns ns µC July, 2006 Symbol X dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 860A di/dt ≤ 600A/µs VR ≤ VDSS Tj ≤ 150°C www.microsemi.com 2-6 APTM10UM01FAG– Rev 1 Electrical Characteristics APTM10UM01FAG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I Isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 600 480 360 240 T J=25°C 120 0 T J=125°C 0 4 8 12 16 20 24 28 0 VDS , Drain to Source Voltage (V) 1.1 Normalized to V GS=10V @ 275A VGS =10V 1 VGS=20V 0.9 1 2 3 4 5 6 VGS , Gate to Source Voltage (V) 7 DC Drain Current vs Case Temperature 1000 RDS(on) vs Drain Current ID, DC Drain Current (A) 800 600 400 200 0.8 0 0 100 200 300 400 500 600 700 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com July, 2006 RDS(on) Drain to Source ON Resistance T J=-55°C 0 4-6 APTM10UM01FAG– Rev 1 ID, Drain Current (A) Transfert Characteristics 720 ID, Drain Current (A) 3500 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) VGS=10V ID= 275A 2.0 1.5 1.0 0.5 0.0 -50 -25 25 50 75 100 125 150 Maximum Safe Operating Area 1.1 1.0 0.9 0.8 0.7 1000 limited by RDSon 100µs 1ms 100 10ms Single pulse TJ=150°C TC=25°C 10 0.6 1 -50 -25 0 25 50 75 100 125 150 1 TC, Case Temperature (°C) VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 1000000 Ciss 100000 Coss 10000 Crss 1000 0 10 100 VDS , Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 ID=550A TJ=25°C 14 V DS =20V 12 VDS=50V 10 10 20 30 40 50 VDS , Drain to Source Voltage (V) V DS =80V 8 6 4 2 0 0 500 1000 1500 2000 2500 3000 Gate Charge (nC) July, 2006 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) 10000 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) Threshold Voltage vs Temperature 1.2 ON resistance vs Temperature 2.5 www.microsemi.com 5-6 APTM10UM01FAG– Rev 1 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM10UM01FAG APTM10UM01FAG Rise and Fall times vs Current 700 350 600 300 t d(off) 500 VDS=66V RG=1Ω T J=125°C L=100µH 400 300 t r and tf (ns) t d(on) and td(off) (ns) Delay Times vs Current td(on) 200 200 tf 150 VDS=66V RG=1Ω T J=125°C L=100µH 100 50 100 0 100 300 500 700 I D, Drain Current (A) 0 100 900 900 12 6 Switching Energy (mJ) VDS=66V RG=1Ω TJ=125°C L=100µH Eoff Eon 4 2 Eoff 0 100 200 300 400 500 600 700 800 900 V DS=66V ID=550A T J=125°C L=100µH 10 8 Eon 4 2 0 Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) ZCS ZVS 10 0 200 VDS=66V D=50% RG=1Ω T J=125°C T C=75°C 300 Hard switching 400 500 600 4 6 8 10 12 Source to Drain Diode Forward Voltage 40 20 2 Gate Resistance (Ohms) 50 30 Eoff 6 I D, Drain Current (A) Frequency (kHz) 300 500 700 ID, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 8 Eon and Eoff (mJ) tr 250 700 10000 1000 T J=150°C T J=25°C 100 10 800 ID, Drain Current (A) 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 APTM10UM01FAG– Rev 1 July, 2006 VSD, Source to Drain Voltage (V)