VN2410
N-Channel Enhancement-Mode Vertical DMOS FET
Features
General Description
•
•
•
•
•
•
•
The VN2410 Enhancement-mode (normally-off)
transistors use a vertical DMOS structure and a
well-proven silicon-gate manufacturing process. This
combination produces a device with the power
handling capabilities of bipolar transistors and the high
input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal
runaway and thermally induced secondary breakdown.
Free from Secondary Breakdown
Low Power Drive Requirement
Ease of Paralleling
Low CISS and Fast Switching Speeds
Excellent Thermal Stability
Integral Source-Drain Diode
High Input Impedance and High Gain
Applications
•
•
•
•
•
•
Microchip’s vertical DMOS FETs are ideally suited for a
wide range of switching and amplifying applications
where very low threshold voltage, high breakdown
voltage, high input impedance, low input capacitance,
and fast switching speeds are desired.
Motor Controls
Converters
Amplifiers
Switches
Power Supply Circuits
Drivers (Relays, Hammers, Solenoids, Lamps,
Memories, Displays, Bipolar Transistors, etc.)
Package Type
3-lead TO-92
(Top view)
DRAIN
SOURCE
GATE
See Table 2-1 for pin information.
2021 Microchip Technology Inc.
DS20006534A-page 1
VN2410
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings†
Drain-to-Source Voltage ...................................................................................................................................... BVDSS
Drain-to-Gate Voltage ......................................................................................................................................... BVDGS
Gate-to-Source Voltage ......................................................................................................................................... ±20V
Operating Ambient Temperature, TA ................................................................................................... –55°C to +150°C
Storage Temperature, TS ..................................................................................................................... –55°C to +150°C
† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only, and functional operation of the device at those or any other conditions above those
indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for
extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
Electrical Specifications: TA = 25°C unless otherwise specified. All DC parameters are 100% tested at 25°C unless
otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle
Parameter
Sym.
Min.
Typ. Max.
Drain-to-Source Breakdown Voltage
BVDSS
240
—
Gate Threshold Voltage
—
Unit
Conditions
V
VGS = 0V, ID = 100 µA
VGS(th)
0.8
—
2
V
VGS = VDS, ID = 1 mA
Gate Body Leakage Current
IGSS
—
—
100
nA
VGS = 20V, VDS = 0V
—
—
10
µA
Zero-Gate Voltage Drain Current
IDSS
VGS = 0V, VDS = 120V
µA
VGS = 0V, VDS = 120V,
TA = 125°C (Note 1)
On-State Drain Current
Static Drain-to-Source On-State Resistance
Change in RDS(ON) with Temperature
Note 1:
ID(ON)
RDS(ON)
ΔRDS(ON)
—
—
500
1
—
—
A
VGS = 10V, VDS = 15V
—
—
10
Ω
VGS = 2.5V, ID = 100 mA
—
—
10
Ω
VGS = 10V, ID = 500 mA
%/°C
VGS = 10V, ID = 500 mA
(Note 1)
—
1
1.4
Specification is obtained by characterization and is not 100% tested.
DS20006534A-page 2
2021 Microchip Technology Inc.
VN2410
AC ELECTRICAL CHARACTERISTICS
Electrical Specifications: TA = 25°C unless otherwise specified. All AC parameters are not 100% sample tested.
Parameter
Sym.
Min.
Typ.
Max.
Forward Transconductance
GFS
300
—
—
Input Capacitance
CISS
—
—
125
pF
Common-Source Output Capacitance
COSS
—
—
50
pF
Reverse Transfer Capacitance
CRSS
—
—
20
pF
Turn-On Delay Time
td(ON)
—
—
8
ns
tr
—
—
8
ns
td(OFF)
—
—
23
ns
tf
—
—
24
ns
VSD
—
1.2
—
V
Rise Time
Turn-Off Delay Time
Fall Time
DIODE PARAMETER
Diode Forward Voltage Drop
Note 1:
Unit
Conditions
mmho VDS = 10V, ID = 500 mA
VGS = 0V,
VDS = 25V,
f = 1 MHz
VDD = 60V,
ID = 400 mA,
RGEN = 25Ω
VGS = 0V, ISD = 190 mA (Note 1)
Unless otherwise stated, all DC parameters are 100% tested at 25°C. Pulse test: 300 µs pulse, 2% duty
cycle
TEMPERATURE SPECIFICATIONS
Parameter
Sym.
Min.
Typ. Max.
Unit
Operating Ambient Temperature
TA
–55
—
+150
°C
Storage Temperature
TS
–55
—
+150
°C
JA
—
132
—
°C/W
Conditions
TEMPERATURE RANGE
PACKAGE THERMAL RESISTANCE
3-lead TO-92
THERMAL CHARACTERISTICS
Package
ID (Note 1)
(Continuous)
(mA)
ID
(Pulsed)
(A)
Power Dissipation
at TA = 25°C
(W)
IDR (Note 1)
(mA)
IDRM
(A)
190
1.7
1
190
1.7
3-lead TO-92
Note 1:
ID (continuous) is limited by maximum rated TJ.
2021 Microchip Technology Inc.
DS20006534A-page 3
VN2410
2.0
PIN DESCRIPTION
The details on the pins of VN2410 are listed in
Table 2-1. Refer to Package Type for the location of
pins.
TABLE 2-1:
PIN FUNCTION TABLE
Pin Number
Pin Name
1
Source
2
Gate
Gate
3
Drain
Drain
DS20006534A-page 4
Description
Source
2021 Microchip Technology Inc.
VN2410
3.0
FUNCTIONAL DESCRIPTION
Figure 3-1 illustrates the switching waveforms and test
circuit for VN2410.
10V
VDD
90%
Pulse
Generator
INPUT
10%
0V
t(ON)
t(OFF)
tr
td(ON)
VDD
td(OFF)
0V
RGEN
10%
90%
FIGURE 3-1:
TABLE 3-1:
OUTPUT
tf
10%
OUTPUT
RL
INPUT
D.U.T.
90%
Switching Waveforms and Test Circuit.
PRODUCT SUMMARY
BVDSS/BVDGS
(V)
RDS(ON)
(Maximum)
(Ω)
IDSS
(Minimum)
(A)
240
10
1
2021 Microchip Technology Inc.
DS20006534A-page 5
VN2410
4.0
PACKAGING INFORMATION
4.1
Package Marking Information
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
DS20006534A-page 6
3-lead TO-92
Example
XXXXXX
X e3
YWWNNN
VN2410
L e3
104573
Product Code or Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC® designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3)
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for product code or customer-specific information. Package may or
not include the corporate logo.
2021 Microchip Technology Inc.
VN2410
Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.
2021 Microchip Technology Inc.
DS20006534A-page 7
VN2410
NOTES:
DS20006534A-page 8
2021 Microchip Technology Inc.
VN2410
APPENDIX A:
REVISION HISTORY
Revision A (May 2021)
• Converted and merged Supertex Doc#
DSFP-VN2410 to Microchip DS20006534A
• Changed the package marking format
• Removed 3-lead TO-92 L P002, P003, and P005
media types to align packaging specifications with
the actual BQM
• Added section(s) to comply with Microchip
formatting standards
• Made minor text changes throughout the
document
2021 Microchip Technology Inc.
DS20006534A-page 9
VN2410
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office.
XX
PART NO.
-
Package
Options
Device
X
-
Environmental
X
Media Type
Device:
VN2410
=
N-Channel Enhancement-Mode Vertical
DMOS FET
Package:
L
=
3-lead TO-92
Environmental:
G
=
Lead (Pb)-free/RoHS-compliant Package
Media Types:
(blank)
=
1000/Bag for an L Package
P013
=
2000/AMMO Pack for an L Package
P014
=
2000/AMMO Pack for an L Package
DS20006534A-page 10
Examples:
a) VN2410L-G:
N-Channel EnhancementMode, Vertical DMOS FET,
3-lead TO-92, 1000/Bag
b) VN2410L-G-P013:
N-Channel EnhancementMode, Vertical DMOS FET,
3-lead TO-92, 2000/AMMO
Pack
c) VN2410L-G-P014:
N-Channel EnhancementMode, Vertical DMOS FET,
3-lead TO-92, 2000/AMMO
Pack
2021 Microchip Technology Inc.
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2021 Microchip Technology Inc.
ISBN: 978-1-5224-8286-4
DS20006534A-page 11
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02/28/20