9 kHz to 30 GHz,
Silicon SPDT Switch
ADRF5021
Data Sheet
FUNCTIONAL BLOCK DIAGRAM
RF2
ADRF5021
VSS
EN
50Ω
RFC
CTRL
50Ω
VDD
RF1
14580-001
Ultrawideband frequency range: 9 kHz to 30 GHz
Nonreflective 50 Ω design
Low insertion loss: 2.0 dB to 30 GHz
High isolation: 60 dB to 30 GHz
High input linearity
1 dB power compression (P1dB): 28 dBm typical
Third-order intercept (IP3): 52 dBm typical
High power handling
24 dBm through path
24 dBm terminated path
ESD sensitivity: Class 1, 1 kV human body model (HBM)
20-terminal, 3 mm × 3 mm land grid array package
No low frequency spurious
Radio frequency (RF) settling time (to 0.1 dB of final RF
output): 6.2 µs
DRIVER
FEATURES
Figure 1.
APPLICATIONS
Test instrumentation
Microwave radios and very small aperture terminals (VSATs)
Military radios, radars, electronic counter measures (ECMs)
Broadband telecommunications systems
GENERAL DESCRIPTION
The ADRF5021 is a general-purpose single-pole, double-throw
(SPDT) switch manufactured using a silicon process. It comes
in a 3 mm × 3 mm, 20-terminal land grid array (LGA) package
and provides high isolation and low insertion loss from 9 kHz
to 30 GHz.
Rev. B
This broadband switch requires dual supply voltages, +3.3 V
and −2.5 V, and provides CMOS/LVTTL logic-compatible
control.
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Technical Support
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ADRF5021
Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
Interface Schematics .....................................................................6
Applications ...................................................................................... 1
Typical Performance Characterics..................................................7
Functional Block Diagram .............................................................. 1
Insertion Loss, Return Loss, and Isolation ................................7
General Description ......................................................................... 1
Input Power Compression and Third-Order Intercept (IP3) 8
Revision History ............................................................................... 2
Theory of Operation .........................................................................9
Specifications .................................................................................... 3
Applications Information ............................................................. 10
Absolute Maximum Ratings ........................................................... 5
Evaluation Board ........................................................................ 10
Power Derating Curves ............................................................... 5
Probe Matrix Board ................................................................... 11
ESD Caution.................................................................................. 5
Outline Dimensions ....................................................................... 12
Pin Configuration and Function Descriptions ............................ 6
Ordering Guide .......................................................................... 12
REVISION HISTORY
3/2020—Rev. A to Rev. B
Changes to Digital Control Inputs Parameter, Table 2 .............. 5
Added Endnote 1, Table 2; Renumbered Sequentially ............... 5
Changes to Theory of Operation Section.................................... 10
2/2017—Rev. 0 to Rev. A
Changed VEN = 3.3 V to 5 V to VEN = 0 V or 3.3 V to 5 V ...........3
7/2016—Revision 0: Initial Version
Rev. B | Page 2 of 12
Data Sheet
ADRF5021
SPECIFICATIONS
VDD = 3.3 V to 5 V, VSS = −2.5 V, VCTRL = 0 V or 3.3 V to 5 V, VEN = 0 V or 3.3 V to 5 V, TCASE = 25°C, 50 Ω system, unless otherwise
noted.
Table 1.
Parameter
FREQUENCY RANGE
INSERTION LOSS
Between RFC and RF1/RF2
Symbol
ISOLATION
Between RFC and RF1/RF2
Between RF1 and RF2
RETURN LOSS
RFC and RF1/RF2 (On)
RF1/RF2 (Off)
SWITCHING
Rise and Fall Time
On and Off Time
RF Settling Time
0.1 dB
0.05 dB
INPUT LINEARITY 1
Power Compression
0.1 dB
1 dB
Third-Order Intercept
SUPPLY CURRENT
Positive
Negative
DIGITAL CONTROL INPUTS
Voltage
Low
High
Current
Low and High
tRISE, tFALL
tON, tOFF
P0.1dB
P1dB
IP3
IDD
ISS
VINL
VINH
Test Conditions/Comments
Min
0.009
Typ
Max
30,000
Unit
MHz
9 kHz to 10 GHz
10 GHz to 20 GHz
20 GHz to 30 GHz
1.1
1.4
2.0
dB
dB
dB
9 kHz to 10 GHz
10 GHz to 20 GHz
20 GHz to 30 GHz
9 kHz to 10 GHz
10 GHz to 20 GHz
20 GHz to 30 GHz
65
60
60
70
65
60
dB
dB
dB
dB
dB
dB
9 kHz to 10 GHz
10 GHz to 20 GHz
20 GHz to- 30 GHz
9 kHz to 10 GHz
10 GHz to 20 GHz
20 GHz to 30 GHz
23
17
13
30
18
8
dB
dB
dB
dB
dB
dB
10% to 90% of RF output
50% VCTL to 90% of RF output
1.0
1.1
µs
µs
50% VCTL to 0.1 dB of final RF output
50% VCTL to 0.05 dB of final RF output
1 MHz to 30 GHz
6.2
10
µs
µs
27
28
52
dBm
dBm
dBm
Two-tone input power = 14 dBm each tone,
Δf = 1 MHz
VDD, VSS pins
VDD = 3.3 V
VDD = 5 V
VSS = −2.5 V
CTRL, EN pins
VDD = 3.3 V
VDD = 5 V
VDD = 3.3 V
VDD = 5 V
IINL, IINH
80
100
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