HMC414MS8G

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com HMC414* Product Page Quick Links Last Content Update: 08/30/2016 Comparable Parts Reference Materials View a parametric search of comparable parts Quality Documentation • HMC Legacy PCN: MS##, MS##E and MS##G,MS##GE packages - Relocation of pre-existing production equipment to new building • Package/Assembly Qualification Test Report: MS8G (QTR: 2014-00393) • PCN: MS, QS, SOT, SOIC packages - Sn/Pb plating vendor change • Semiconductor Qualification Test Report: GaAs HBT-B (QTR: 2013-00229) Evaluation Kits • HMC414MS8G Evaluation Board Documentation Application Notes • AN-1363: Meeting Biasing Requirements of Externally Biased RF/Microwave Amplifiers with Active Bias Controllers • Broadband Biasing of Amplifiers General Application Note • MMIC Amplifier Biasing Procedure Application Note • Thermal Management for Surface Mount Components General Application Note Data Sheet • HMC414 Data Sheet Tools and Simulations • HMC414 S-Parameter Design Resources • • • • HMC414 Material Declaration PCN-PDN Information Quality And Reliability Symbols and Footprints Discussions View all HMC414 EngineerZone Discussions Sample and Buy Visit the product page to see pricing options Technical Support Submit a technical question or find your regional support number * This page was dynamically generated by Analog Devices, Inc. and inserted into this data sheet. Note: Dynamic changes to the content on this page does not constitute a change to the revision number of the product data sheet. This content may be frequently modified. THIS PAGE INTENTIONALLY LEFT BLANK HMC414MS8G / 414MS8GE v04.0607 GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz Typical Applications Features This amplifier is ideal for use as a power amplifier for 2.2 - 2.7 GHz applications: Gain: 20 dB • BLUETOOTH 32% PAE • MMDS Supply Voltage: +2.75V to +5V Saturated Power: +30 dBm Power Down Capability LINEAR & POWER AMPLIFIERS - SMT 11 Low External Part Count Functional Diagram General Description The HMC414MS8G & HMC414MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate between 2.2 and 2.8 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 20 dB of gain, +30 dBm of saturated power at 32% PAE from a +5V supply voltage. The amplifier can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/ current control. Electrical Specifi cations, TA = +25° C, As a Function of Vs, Vpd = 3.6V Vs = 3.6V Min. Frequency Range Typ. Max. Min. 20 25 17 0.03 0.04 2.2 - 2.8 Gain 17 Gain Variation Over Temperature Typ. Max. 2.2 - 2.8 Units GHz 20 25 dB 0.03 0.04 dB/ °C Input Return Loss 8 8 Output Return Loss 9 9 dB 27 dBm 30 dBm 39 dBm Output Power for 1 dB Compression (P1dB) 21 Saturated Output Power (Psat) 25 23 27 Output Third Order Intercept (IP3) 30 Noise Figure 11 - 58 Vs = 5V Parameter 35 35 dB 6.5 7.0 dB 0.002 / 240 0.002 / 300 mA Supply Current (Icq) Vpd = 0V / 3.6V Control Current (Ipd) Vpd = 3.6V 7 7 mA Switching Speed tON, tOFF 45 45 ns For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC414MS8G / 414MS8GE v04.0607 GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz Gain vs. Temperature, Vs= 5V 30 30 25 25 20 20 GAIN (dB) 15 +25 C +85 C -40 C 10 15 5 5 0 0 2 2.2 2.4 2.6 2.8 3 2 2.2 FREQUENCY (GHz) 2.6 2.8 3 2.8 3 2.8 3 Return Loss, Vs= 5V 0 0 S11 S22 S11 S22 -4 RETURN LOSS (dB) -4 RETURN LOSS (dB) 2.4 FREQUENCY (GHz) Return Loss, Vs= 3.6V -8 -12 -16 -8 -12 -16 -20 -20 2 2.2 2.4 2.6 2.8 3 2 2.2 FREQUENCY (GHz) 28 28 24 24 P1dB (dBm) 32 20 +25 C +85 C -40 C 12 2.6 P1dB vs. Temperature, Vs= 5V 32 16 2.4 FREQUENCY (GHz) P1dB vs. Temperature, Vs= 3.6V P1dB (dBm) 11 +25 C +85 C -40 C 10 20 16 +25 C +85 C -40 C 12 8 8 4 4 0 LINEAR & POWER AMPLIFIERS - SMT GAIN (dB) Gain vs. Temperature, Vs= 3.6V 0 2 2.2 2.4 2.6 FREQUENCY (GHz) 2.8 3 2 2.2 2.4 2.6 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 59 HMC414MS8G / 414MS8GE v04.0607 GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz Psat vs. Temperature, Vs= 5V 32 28 28 24 24 20 20 16 Psat (dBm) 32 +25 C +85 C -40 C 12 +25 C +85 C -40 C 12 8 4 4 0 2 2.2 2.4 2.6 2.8 3 2 2.2 FREQUENCY (GHz) Power Compression@ 2.4 GHz, Vs= 3.6V 2.6 2.8 3 Power Compression@ 2.4 GHz, Vs= 5V 36 Pout (dBm), GAIN (dB), PAE (%) 36 Pout (dBm), GAIN (dB), PAE (%) 2.4 FREQUENCY (GHz) Pout Gain PAE 30 24 18 12 6 0 -14 -9 -4 1 6 11 Pout Gain PAE 30 24 18 12 6 0 -14 16 -9 INPUT POWER (dBm) Output IP3 vs. Temperature, Vs= 3.6V 1 6 11 16 Output IP3 vs. Temperature, Vs= 5V 42 37 37 32 32 IP3 (dBm) 42 +25 C +85 C -40 C 27 -4 INPUT POWER (dBm) +25 C +85 C -40 C 27 22 22 17 17 12 12 2 2.2 2.4 2.6 FREQUENCY (GHz) 11 - 60 16 8 0 IP3 (dBm) LINEAR & POWER AMPLIFIERS - SMT 11 Psat (dBm) Psat vs. Temperature, Vs= 3.6V 2.8 3 2 2.2 2.4 2.6 2.8 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 HMC414MS8G / 414MS8GE v04.0607 GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz Reverse Isolation vs. Temperature, Vs= 3.6V Power Down Isolation, Vs= 3.6V 0 0 -10 ISOLATION (dB) ISOLATION (dB) -10 +25 C +85 C -40 C -20 -20 -30 11 -40 -30 -40 -60 2 2.2 2.4 2.6 2.8 3 2 2.2 FREQUENCY (GHz) 2.6 2.8 3 Noise Figure vs. Temperature, Vs= 5V 15 15 +25 C +85 C -40 C +25 C +85 C -40 C 12 NOISE FIGURE (dB) 12 NOISE FIGURE (dB) 2.4 FREQUENCY (GHz) Noise Figure vs. Temperature, Vs= 3.6V 9 6 3 9 6 3 0 0 2 2.2 2.4 2.6 2.8 3 2 2.2 FREQUENCY (GHz) 30 22 20 18 Gain 14 18 3.75 4.25 3 4.75 Vcc SUPPLY VOLTAGE (Vdc) 5.25 400 28 320 P1dB Psat 240 24 Icq 160 20 Gain Icq (mA) 22 P1dB, Psat (dBm) 26 3.25 2.8 32 GAIN (dB), P1dB (dBm), Psat (dBm) P1dB Psat 24 2.75 2.6 Gain, Power & Quiescent Supply Current vs Vpd@ 2.4 GHz 34 28 26 2.4 FREQUENCY (GHz) Gain & Power vs. Supply Voltage GAIN dB) LINEAR & POWER AMPLIFIERS - SMT -50 80 16 0 12 2 2.4 2.8 3.2 3.6 Vpd (Vdc) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 61 HMC414MS8G / 414MS8GE v04.0607 GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz Absolute Maximum Ratings LINEAR & POWER AMPLIFIERS - SMT 11 Collector Bias Voltage (Vcc) +5.5 Vdc Control Voltage (Vpd1, Vpd2) +4.0 Vdc RF Input Power (RFIN)(Vs = +5.0, Vpd = +3.6 Vdc) +17 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 27 mW/°C above 85 °C) 1.755 W Thermal Resistance (junction to ground paddle) 37 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC414MS8G Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC414MS8GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] H414 XXXX [2] H414 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 11 - 62 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC414MS8G / 414MS8GE v04.0607 GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz Pin Descriptions Function Description 1 RFIN This pin is AC coupled and matched to 50 Ohms. 2 NC Not Connected. 3, 4 RFOUT RF output and DC bias for the output stage. 5 GND Ground: Backside of package has exposed metal ground slug that must be connected to ground thru a short path. Vias under the device are required. 6, 8 Vpd1, Vpd2 Power control pin. For maximum power, this pin should be connected to 3.6V. For 5V operation, a dropping resistor is required. A higher voltage is not recommended. For lower idle current, this voltage can be reduced. 7 Vcc Power supply voltage for the first amplifier stage. An external bypass capacitor of 330 pF is required as shown in the application schematic. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 LINEAR & POWER AMPLIFIERS - SMT Pin Number 11 - 63 HMC414MS8G / 414MS8GE v04.0607 GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz Evaluation PCB LINEAR & POWER AMPLIFIERS - SMT 11 * For 5V operation on Vctl line, select R1, R2 such that 3.6V is presented on Pins 6 and 8. List of Materials for Evaluation PCB 105006 [1] Item Description J1 - J2 PCB Mount SMA RF Connector J3 2 mm DC Header C1 2.7 pF Capacitor, 0603 Pkg. C2 100 pF Capacitor, 0402 Pkg. C3 - C6 330 pF Capacitor, 0603 Pkg. C7 2.2 μF Capacitor, Tantalum L1 18nH Inductor 0603 Pkg. U1 HMC414MS8G / HMC414MS8GE Amplifier PCB [2] 105074 Eval Board The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 11 - 64 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC414MS8G / 414MS8GE v04.0607 GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz Application Circuit TL1 TL2 TL3 Impedance 50 Ohm 50 Ohm 50 Ohm Length 0.036” 0.3” 0.11” * For 5V operation on Vctl line, select R1, R2 such that 3.6V is presented on Pins 6 and 8. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com LINEAR & POWER AMPLIFIERS - SMT 11 11 - 65