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HMC435MS8GE

HMC435MS8GE

  • 厂商:

    AD(亚德诺)

  • 封装:

    TSSOP8_EP

  • 描述:

    IC SWITCH SPDT 8MSOP

  • 数据手册
  • 价格&库存
HMC435MS8GE 数据手册
HMC435MS8G / 435MS8GE v05.0110 Typical Applications Features The HMC435MS8G(E) is ideal for: • Basestations & Repeaters High Isolation: 60 dB @ 1 GHz 50 dB @ 2 GHz • Cellular/3G and WiMAX/4G Positive Control: 0/+5V • Infrastructure and Access Points Input IP3: 51 dBm • CATV/CMTS Non-Reflective Design • Test Instrumentation Ultra Small MSOP-86 Package: 14.8 mm2 Functional Diagram General Description The HMC435MS8G(E) is a non-reflective DC to 4 GHz GaAs MESFET SPDT switch in a low cost 8 lead MSOP8G surface mount package with exposed ground paddle. The switch is ideal for cellular/3G and WiMAX/4G applications yielding up to 60 dB isolation, low 0.8 dB insertion loss and +50 dBm input IP3. Power handling is excellent up through the 3.8 GHz WiMAX band with the switch offering a P1dB compression of +31 dBm. On-chip circuitry allows positive voltage control of 0/+5 Volts at very low DC currents. SWITCHES - SPDT - SMT 11 Electrical Specifi cations, TA = +25° C, Vctl = 0/+5 Vdc, 50 Ohm System Parameter Frequency Min. Typ. Max. Units 0.8 1.2 1.5 1.0 1.5 1.8 dB dB dB Insertion Loss DC - 2.5 GHz DC - 3.6 GHz DC - 4.0 GHz Isolation (RFC to RF1/RF2) DC - 1.0 GHz DC - 2.0 GHz DC - 2.5 GHz DC - 3.6 GHz DC - 4.0 GHz 56 46 43 37 30 60 50 47 41 35 dB dB dB dB dB Return Loss (On State) DC - 2.5 GHz DC - 3.6 GHz DC - 4.0 GHz 15 13 11 20 17 15 dB dB dB Return Loss (Off State) 0.5 - 4.0 GHz 16 21 dB Input Power for 1 dB Compression 0.5 - 4.0 GHz 27 31 dBm Input Third Order Intercept (Two-Tone Input Power = +7 dBm Each Tone) 0.5 - 1.0 GHz 0.5 - 2.5 GHz 0.5 - 4.0 GHz 48 45 41 51 48 45 dBm Switching Speed DC - 4.0 GHz 40 60 ns ns tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) 11 - 122 SPDT NON-REFLECTIVE SWITCH, DC - 4 GHz For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC435MS8G / 435MS8GE v05.0110 SPDT NON-REFLECTIVE SWITCH, DC - 4 GHz Return Loss Insertion Loss 0 -5 -1 RETURN LOSS (dB) -2 + 25C + 85C - 40C -3 -4 RFC RF1, RF2 OFF RF1, RF2 ON -10 -15 -20 -25 -30 -5 0 0.5 1 1.5 2 2.5 3 3.5 0 4 0.5 1 2 0 -10 -10 RF1 RF2 -30 -40 -50 -60 3 3.5 4 11 RFC - RF1 ON RFC - RF2 ON -20 -30 -40 -50 -60 -70 -70 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 FREQUENCY (GHz) 1.5 2 2.5 3 3.5 4 3.5 4 FREQUENCY (GHz) 0.1 and 1 dB Input Compression Point Input Third Order Intercept Point 35 60 58 +25 C +85 C -40 C 56 30 54 IP3 (dBm) COMPRESSION (dBm) 2.5 Isolation Between Ports RF1 and RF2 0 ISOLATION (dB) ISOLATION (dB) Isolation Between Ports RFC and RF1 / RF2 -20 1.5 FREQUENCY (GHz) FREQUENCY (GHz) 25 52 50 48 46 1 dB Compression Point 0.1 dB Compression Point 20 SWITCHES - SPDT - SMT INSERTION LOSS (dB) 0 44 42 40 15 0 0.5 1 1.5 2 2.5 FREQUENCY (GHz) 3 3.5 4 0 0.5 1 1.5 2 2.5 3 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 123 HMC435MS8G / 435MS8GE v05.0110 SPDT NON-REFLECTIVE SWITCH, DC - 4 GHz Control Voltages Absolute Maximum Ratings Control Voltage Range -0.5 to +7.5 Vdc State Bias Condition* RF Input Power Vctl = 0/+5V +31 dBm Low 0 Vdc @ 25 μA Typical RF1, RF2 Termination +26 dBm High +5 Vdc @ 25 μA Typical Junction Temperature 150 °C Continuous Pdiss (derate 8 mW/ °C above 85 °C) 0.52 W Thermal Resistance - Insertion Loss Path (channel to ground paddle) 118 °C/W Thermal Resistance - Termination Path (channel to ground paddle) Truth Table Control Input 125 °C/W Signal Path State A B Low High RFC to: RF1 High Low RF2 Storage Temperature -65 °C to +150 °C Operating Temperature -40 °C to +85 °C DC blocks are required at ports RFC, RF1, RF2. ESD Sensitivity (HBM) Class 1A Do not operate continuously at RF power input greater than 1 dB compression and do not “Hot Switch” power levels greater than +24 dBm (control = 0/+5 Vdc). ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing SWITCHES - SPDT - SMT 11 *Control Input Tolerances are ± 0.2 Vdc NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC435MS8G Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC435MS8GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] H435 XXXX [2] H435 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 11 - 124 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC435MS8G / 435MS8GE v05.0110 SPDT NON-REFLECTIVE SWITCH, DC - 4 GHz Pin Descriptions Pin Number Function Description 1 A See truth and control voltage tables. 2 B See truth and control voltage tables. 3, 5, 8 RFC, RF1, RF2 These pins are DC coupled and matched to 50 Ohms. Blocking capacitors are required. 4 N/C The pins are not connected internally; however, all data shown herein was measured with these pins connected to RF/DC ground externally. 6, 7 GND Package bottom has exposed metal paddle that must be connected to PCB RF ground as well. Interface Schematic Evaluation PCB List of Materials for Evaluation PCB 105143 [1] Item Description J1 - J3 PCB Mount SMA RF Connector J4 - J7 DC Pin C1 - C3 100 pF Capacitor, 0402 Pkg. R1 - R2 100 Ohm Resistor, 0402 Pkg. U1 HMC435MS8G(E) SPDT Switch PCB [2] 104122 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 SWITCHES - SPDT - SMT 11 The circuit board used in the application should be generated with proper RF circuit design techniques. Signal lines at the RF port should have 50 Ohm impedance and the package ground leads and backside ground slug should be connected directly to the ground plane similar to that shown above. The evaluation circuit board shown above is available from Hittite Microwave Corporation upon request. Note: Pin J6 is unused and need not be connected. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 125
HMC435MS8GE 价格&库存

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HMC435MS8GE
    •  国内价格
    • 1+93.28000

    库存:0