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HMC5445LS6TR

HMC5445LS6TR

  • 厂商:

    AD(亚德诺)

  • 封装:

    TFQFN16_EP

  • 描述:

    POWER AMP 24-29.5GHZ INGAP

  • 数据手册
  • 价格&库存
HMC5445LS6TR 数据手册
HMC5445LS6 v01.0613 Typical Applications Features The HMC5445LS6 is ideal for: Saturated Output Power: +31.5 dBm @ 23% PAE • Point-to-Point Radios High Output IP3: +40 dBm • Point-to-Multi-Point Radios High Gain: 26 dB • VSAT DC Supply: +6V @ 750 mA • Military & Space No External Matching Required TE 16 Lead Ceramic 6 x 6 mm SMT Package: 36 mm2 General Description Functional Diagram LE The HMC5445LS6 is a three-stage GaAs pHEMT MMIC 1 Watt Power Amplifier which operates between 24 and 27 GHz. The HMC5445LS6 provides 26 dB of gain, and +31 dBm of saturated output power and 18% PAE from a +6V supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Function-Modules (MFMs). The HMC5445LS6 eliminates the need for wire bonding and allows the use of surface mount manufacturing techniques. B SO AMPLIFIER - LINEAR & POWER - SMT GaAs phemt MMIC 1 watt POWER AMPLIFIER, 24 - 27 GHz O Electrical Specifications, TA = +25 °C, Vdd = Vdd1 = Vdd2 = +6V, Idd = 750 mA [1] Parameter Min. Frequency Range Gain 23 Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Typ. 24 - 27 27 Max. Units GHz 26 dB 0.03 dB/ °C 17 dB 17 dB 30.5 dBm 31.5 dBm Output Third Order Intercept (IP3)[2] 40 dBm Total Supply Current (Idd) 750 mA [1] Adjust Vgg between -2 to 0V to achieve Idd = 750 mA typical. [2] Measurement taken at +6V @ 750 mA, Pout / Tone = +19 dBm 1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com HMC5445LS6 v01.0613 GaAs phemt MMIC 1 watt POWER AMPLIFIER, 24 - 27 GHz Broadband Gain & Return Loss vs. Frequency Gain vs. Temperature 30 32 26 GAIN (dB) RESPONSE (dB) 28 10 0 -10 24 22 20 18 -20 TE 16 -30 14 -40 12 21 23 25 27 29 31 23 S11 + 25C S22 Input Return Loss vs. Temperature 0 27 28 + 85C - 40C Output Return Loss vs. Temperature -15 -20 -30 23 B SO -10 24 25 26 27 RETURN LOSS (dB) -5 -25 -10 -15 -20 -25 -30 28 23 24 25 FREQUENCY (GHz) + 25C + 85C 26 27 28 FREQUENCY (GHz) - 40C P1dB vs. Temperature + 25C + 85C - 40C P1dB vs. Supply Voltage O 33 33 31 31 P1dB (dBm) P1dB (dBm) 26 0 -5 RETURN LOSS (dB) 25 LE S21 24 FREQUENCY (GHz) FREQUENCY (GHz) AMPLIFIER - LINEAR & POWER - SMT 30 20 29 27 25 29 27 25 23 23 23 24 25 26 27 28 23 24 25 + 25C + 85C 26 27 28 FREQUENCY (GHz) FREQUENCY (GHz) - 40C 6.0V 5.5V 5.0V Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com 2 HMC5445LS6 v01.0613 GaAs phemt MMIC 1 watt POWER AMPLIFIER, 24 - 27 GHz 34 32 32 Psat (dBm) Psat (dBm) Psat vs. Supply Voltage 34 30 28 30 TE 28 26 26 23 24 25 26 27 28 23 FREQUENCY (GHz) + 85C 24 25 26 FREQUENCY (GHz) 6.0V - 40C P1dB vs. Supply Current (Idd) 5.5V 28 5.0V Psat vs. Supply Current (Idd) 33 34 27 25 23 B SO 29 24 25 26 27 Psat (dBm) 32 31 30 28 26 24 28 23 24 FREQUENCY (GHz) 700 mA 750 mA O 44 44 IP3 (dBm) IP3 (dBm) 46 40 38 27 750 mA 28 800 mA Output IP3 vs. Supply Current, Pout/Tone = +19 dBm 46 42 25 26 FREQUENCY (GHz) 700 mA 800 mA Output IP3 vs. Temperature, Pout/Tone = +19 dBm 42 40 38 36 36 23 24 25 26 27 28 23 24 + 25C + 85C 25 26 27 28 FREQUENCY (GHz) FREQUENCY (GHz) 3 27 LE + 25C P1dB (dBm) AMPLIFIER - LINEAR & POWER - SMT Psat vs. Temperature - 40C 700 mA 750 mA 800 mA Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com HMC5445LS6 v01.0613 GaAs phemt MMIC 1 watt POWER AMPLIFIER, 24 - 27 GHz Output IP3 vs. Supply Voltage, Pout/Tone = +19 dBm Output IM3 @ Vdd = +5V 50 44 IM3 (dBc) IP3 (dBm) 40 42 40 30 20 TE 38 10 0 36 23 24 25 26 27 12 28 5.5V 5.0V Output IM3 @ Vdd = +5.5V 15 16 18 19 20 21 22 23 24GHz 25GHz 26GHz 27GHz 60 50 50 30 20 10 0 12 13 14 15 16 17 18 19 20 21 22 IM3 (dBc) 40 B SO 40 30 20 10 0 23 12 13 14 15 16 Pout/TONE (dBm) 24GHz 25GHz 18 19 24 GHz 26 GHz 20 21 22 23 28 GHz 29 GHz Reverse Isolation vs. Temperature O 0 30 -10 REVERSE ISOLATION (dB) 35 25 20 15 10 5 0 -10 17 Pout/TONE (dBm) 26GHz 27GHz Power Compression @ 26 GHz Pout (dBm), GAIN (dB), PAE (%) 17 Output IM3 @ Vdd = +6V 60 IM3 (dBc) 14 LE 6.0V 13 Pout/TONE (dBm) FREQUENCY (GHz) AMPLIFIER - LINEAR & POWER - SMT 60 46 -20 -30 -40 -50 -60 -70 -8 -6 -4 -2 0 2 4 6 8 INPUT POWER (dBm) Pout Gain PAE 24 25 26 27 28 FREQUENCY (GHz) + 25C + 85C 29 30 - 40C Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com 4 HMC5445LS6 v01.0613 GaAs phemt MMIC 1 watt POWER AMPLIFIER, 24 - 27 GHz Gain & Power vs. Supply Current @ 27 GHz Gain & Power vs. Supply Voltage @ 27 GHz GAIN (dB), P1dB (dBm), Psat (dBm) 35 33 31 29 25 700 31 29 27 TE 27 33 25 720 740 GAIN 760 Idd (mA) 780 800 5 5.2 5.4 5.6 5.8 6 Vdd (V) P1dB Psat GAIN P1dB Psat LE GAIN (dB), P1dB (dBm), Psat (dBm) Power Dissipation POWER DISSIPATION (W) 6 5.5 5 B SO AMPLIFIER - LINEAR & POWER - SMT 35 4.5 4 -7 -5 -3 -1 1 3 5 7 INPUT POWER (dBm) 26 GHz 27 GHz O Max. Pdis @ + 85C 24 GHz 25 GHz 5 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com HMC5445LS6 v01.0613 GaAs phemt MMIC 1 watt POWER AMPLIFIER, 24 - 27 GHz RF Input Power (RFIN) +23 dBm Channel Temperature +150 °C Continuous Pdis (T=85 °C) (derate 72 mW/°C above 85 °C) 4.7 W Thermal Resistance (Channel to ground paddle) 13.83 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Rating Class 0 Junction Temperature to Maintain 1 Million Hour MTTF 150 °C Nominal Junction Temperature (T = 85 °C and Pin = 10 dBm) 90 °C Operating Temperature -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TE +6.3V LE Drain Bias Voltage (Vd) O B SO Outline Drawing AMPLIFIER - LINEAR & POWER - SMT Reliability Information Absolute Maximum Ratings NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating [2] Package Marking [1] HMC5445LS6 ALUMINA WHITE Gold over Nickel N/A H5445 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com 6 HMC5445LS6 v01.0613 GaAs phemt MMIC 1 watt POWER AMPLIFIER, 24 - 27 GHz Function Description 1, 11 Vdd1, Vdd2 Drain bias voltage. External bypass capacitors of 100 pF, 0.1 µF and 4.7 µF are required for each pin. 2, 10 Vgg Gate control for PA. Adjust Vgg to achieve recommended bias current. Only one pin is required. External bypass caps 100 pF, 0.1 µF and 4.7 µF are required. 3, 4, 8, 9, 12, 16 N/C The pins are not connected internally; however, all data shown herein was measured with these pins connected to RF/DC ground externally. 5, 7, 13, 15 GND These pins and exposed paddle must be connected to RF/DC ground. 6 RFIN This pin is AC coupled and matched to 50 Ohms. 14 RFOUT LE This pin is AC coupled and matched to 50 Ohms. B SO Application Circuit Interface Schematic TE Pin Number O AMPLIFIER - LINEAR & POWER - SMT Pin Descriptions 7 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com HMC5445LS6 v01.0613 GaAs phemt MMIC 1 watt POWER AMPLIFIER, 24 - 27 GHz O List of Materials for Evaluation PCB EVAL01-HMC5445LS6 Item Description J1, J2 "K" Connector, SRI J5, J6 DC Pin C1, C2, C5, C6 100 pF Capacitor, 0402 Pkg. C7, C8, C11, C12 10000 pF Capacitor, 0603 Pkg. C13, C14, C17, C18 4.7 µF Capacitor, ? Pkg. R2 0 Ohm Resistor, 0402 Pkg. U1 HMC5445LS6 Amplifier PCB [2] 128996 Eval Board [1] Reference this number when ordering complete evaluation PCB AMPLIFIER - LINEAR & POWER - SMT B SO LE TE Evaluation PCB [1] The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [2] Circuit Board Material: Rogers 4350 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com 8
HMC5445LS6TR 价格&库存

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