HMC817LP4E

HMC817LP4E v00.1108 Typical Applications Features The HMC817LP4E is ideal for: Noise Figure: 0.5 dB • Cellular/3G and LTE/WiMAX/4G Gain: 16 dB • BTS & Infrastructure Output IP3: +37 dBm • Repeaters and Femtocells Single Supply: +3V to +5V • Multi-Channel Applications 50 Ohm Matched Input/Output • Access Points TE 24 Lead 4x4mm QFN Package: 16 mm2 Functional Diagram General Description LE The HMC817LP4E is a GaAs pHEMT Dual Channel Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 550 and 1200 MHz. The amplifier has been optimized to provide 0.5 dB noise figure, 24 dB gain and +37 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent with minimal external matching and bias decoupling components. The HMC817LP4E shares the same package and pinout with the HMC816LP4E and HMC818LP4E LNAs. The HMC817LP4E can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of each channel of the LNA for each application. B SO Amplifiers - Low Noise - SMT 7 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 550 - 1200 MHz Electrical Specifications, TA = +25° C, O Rbias 1, 2 = 10k Ohms* Vdd = Vdd1 = Vdd2 = +5V, Idd = Idd1 = Idd2 Parameter Vdd = +3 V Min. Frequency Range Gain Typ. Max. Min. 698 - 960 13 Gain Variation Over Temperature Vdd = +5 V Typ. Max. Min. 550 - 1200 16 11 0.003 Min. 13.5 11.5 MHz 16 dB 0.005 dB/ °C 0.5 28 22 22 17 dB Output Return Loss 12 14 12 15 dB 21 dBm 16 12.5 16.5 18.5 0.85 Units Noise Figure 14 0.55 Max. 550 - 1200 16 0.005 1.1 Typ. Input Return Loss Output Power for 1 dB Compression (P1dB) 0.5 Max. 698 - 960 15 0.003 0.8 Typ. 20.5 0.6 16.5 1.1 dB Saturated Output Power (Psat) 17 17.5 21 21.5 dBm Output Third Order Intercept (IP3) 31 30 37 37 dBm Supply Current (Idd) 24 34 44 24 34 44 65 95 124 65 95 124 mA * Rbias resistor sets current, see application circuit herein 7-1 Information furnished delivery by Analog Devices is believed be accurate and reliable. However, no For price, delivery, and Road, to placeChelmsford, orders: AnalogMA Devices, Inc., For price, and to place toorders: Hittite Microwave Corporation, 20 Alpha 01824 responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that mayPhone: result from 978-250-3343 its use. Specifications subject to change without notice. No Fax: 978-250-3373 Order781-329-4700 On-line at •www.hittite.com Phone: Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Phone: 978-250-3343 or apps@hittite.com Trademarks and registered trademarks areApplication the property of theirSupport: respective owners. HMC817LP4E v00.1108 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 550 - 1200 MHz Broadband Gain & Return Loss 7 Gain vs. Temperature [1] 25 20 5 GAIN (dB) -5 S22 -15 TE 12 S11 -35 10 0.6 0.8 1 1.2 1.4 FREQUENCY (GHz) 1.6 B SO GAIN (dB) 0.5 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) 1.1 1.2 O 0.8 0.9 1 FREQUENCY (GHz) 1.1 1.2 1.3 -15 -20 -25 -35 0.5 0 -5 -5 -15 +25 C +85 C - 40 C -20 -25 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) 1.1 1.2 1.3 Reverse Isolation vs. Temperature [1] 0 -10 +25 C +85 C - 40 C -30 ISOLATION (dB) RETURN LOSS (dB) -10 1.3 Output Return Loss vs. Temperature [1] +25 C +85 C - 40 C -10 -15 -20 -25 -30 0.5 0.7 -5 +25C +85C - 40C 18 10 0.6 0 20 12 0.5 2 Input Return Loss vs. Temperature [1] 22 14 1.8 LE 0.4 Gain vs. Temperature [2] 16 16 14 -25 0.2 +25C +85C - 40C 18 Vdd= 5V Vdd= 3V RETURN LOSS (dB) RESPONSE (dB) 15 Amplifiers - Low Noise - SMT 22 S21 -30 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) 1.1 1.2 1.3 0.5 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) 1.1 1.2 1.3 [1] Vdd = 5V [2] Vdd = 3V Information furnisheddelivery by Analog Devices believed orders: to be accurate and reliable. However, Corporation, no For price, delivery, andRoad, to place orders: Analog Devices, For price, and tois place Hittite Microwave 20 Alpha Chelmsford, MA 01824Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 One Order On-line at www.hittite.com Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Application Support: Phone: 978-250-3343 or apps@hittite.com Trademarks and registered trademarks are the property of their respective owners. 7-2 HMC817LP4E v00.1108 7 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 550 - 1200 MHz Noise Figure vs. Temperature [1] P1dB vs. Temperature 24 0.8 0.6 P1dB (dBm) +85C +25 C 0.4 18 Vdd=3V 16 TE 14 -40C 0.2 +25 C +85 C - 40 C 12 0 10 0.7 0.8 0.9 1 FREQUENCY (GHz) 1.1 Psat vs. Temperature Vdd=5V 14 12 10 0.5 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) 44 1.1 Vdd=5V 1.2 1.3 +25 C +85 C - 40 C 40 B SO 16 0.5 48 20 18 1.3 Output IP3 vs. Temperature 24 22 1.2 LE 0.6 Vdd=3V IP3 (dBm) 0.5 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) 1.1 1.2 O 36 32 28 +25 C +85 C -40 C Vdd=3V 24 20 0.5 1.3 Output IP3 and Supply Current vs. Supply Voltage @ 700 MHz 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 FREQUENCY (GHz) Output IP3 and Supply Current vs. Supply Voltage @ 900 MHz 210 40 210 38 180 38 180 36 150 36 150 34 120 34 120 32 90 32 90 30 60 30 60 28 30 28 30 0 26 26 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 VOLTAGE SUPPLY (V) 2.7 3.1 3.5 3.9 4.3 4.7 5.1 Idd (mA) 40 Idd (mA) IP3 (dBm) Vdd=5V 20 IP3 (dBm) NOISE FIGURE (dB) 22 Vdd= 5V Vdd= 3V 1 Psat (dBm) Amplifiers - Low Noise - SMT 1.2 0 5.5 VOLTAGE SUPPLY (V) [1] Measurement reference plane shown on evaluation PCB drawing. 7-3 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, andRoad, to place orders: Analog Devices, For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Chelmsford, MA 01824Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order 781-329-4700 On-line at www.hittite.com • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com HMC817LP4E v00.1108 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 550 - 1200 MHz Power Compression @ 700 MHz [1] 40 Pout Gain PAE 30 20 0 -10 40 30 20 10 0 -10 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 -16 INPUT POWER (dBm) -14 -12 -10 -8 -6 -4 -2 0 2 LE INPUT POWER (dBm) Power Compression @ 900 MHz [2] Power Compression @ 700 MHz [2] 50 60 40 Pout Gain PAE 30 20 10 0 -10 B SO Pout (dBm), GAIN (dB), PAE (%) Pout Gain PAE TE 10 50 Amplifiers - Low Noise - SMT Pout (dBm), GAIN (dB), PAE (%) 60 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) 50 50 Pout Gain PAE 40 30 20 10 0 -10 8 -16 -14 -12 -10 INPUT POWER (dBm) Gain P1dB 1 24 0.8 22 18 0.4 16 14 2.7 Noise Figure 3.1 3.5 3.9 4.3 4.7 SUPPLY VOLTAGE (V) -6 -4 -2 0 2 4 6 5.1 0.2 0 5.5 1 Gain P1dB 0.8 0.6 20 0.4 18 Noise Figure 0.2 16 14 2.7 3.1 3.5 3.9 4.3 4.7 5.1 NOISE FIGURE (dB) 0.6 NOISE FIGURE (dB) 20 GAIN (dB) & P1dB (dBm) 24 22 -8 INPUT POWER (dBm) Gain, Power & Noise Figure vs. Supply Voltage @ 900 MHz O Gain, Power & Noise Figure vs. Supply Voltage @ 700 MHz GAIN (dB) & P1dB (dBm) 7 Power Compression @ 900 MHz [1] 0 5.5 SUPPLY VOLTAGE (V) [1] Vdd = 5V [2] Vdd = 3V Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and Road, to placeChelmsford, orders: AnalogMA Devices, Inc., For price, delivery toforplace orders: Hittite Microwave Corporation, 20 Alpha 01824 responsibility is assumed by Analogand Devices its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that mayPhone: result from its use. Specifications subject to change without notice. No 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at •www.hittite.com Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks areApplication the property of theirSupport: respective owners. Phone: 978-250-3343 or apps@hittite.com 7-4 HMC817LP4E v00.1108 7 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 550 - 1200 MHz Cross Channel Isolation [1] Magnitude Balance [1] RFIN1 TO RFOUT2 RFIN2 TO RFOUT1 -20 -30 -40 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0.7 0.8 0.7 0.8 0.9 LE B SO 1 0.6 0.6 1 1.1 1.2 1.3 Absolute Maximum Ratings 2 -2 0.5 -0.5 FREQUENCY (GHz) Phase Balance [1] -1 0 -1 0.5 1.3 FREQUENCY (GHz) 0 0.5 TE ISOLATION (dB) AMPLITUDE BALANCE (dB) 1 -10 PHASE BALANCE (degrees) Amplifiers - Low Noise - SMT 0 0.9 1 1.1 1.2 Drain Bias Voltage (Vdd) +6V RF Input Power (RFIN) (Vdd = +5 Vdc) +10 dBm Channel Temperature 150 °C Continuous Pdiss (T= 85 °C) (derate 16.67 mW/°C above 85 °C) 1.08 W Thermal Resistance (channel to ground paddle) 60 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C 1.3 FREQUENCY (GHz) O Typical Supply Current vs. Vdd (Rbias = 10kΩ) Vdd (V) Idd (mA) 2.7 24 3.0 34 3.3 44 4.5 82 5.0 95 5.5 105 Note: Amplifier will operate over full voltage ranges shown above. Absolute Bias Register for Idd Range & Recommended Bias Resistor Vdd (V) 3V 5V Rbias Ω Idd (mA) Min Max Recommended 10k Open circuit 10k 34 820 58 0 Open circuit 2k 78 10k 95 With Vdd = 3V Rbias