HMC817LP4E
v00.1108
Typical Applications
Features
The HMC817LP4E is ideal for:
Noise Figure: 0.5 dB
• Cellular/3G and LTE/WiMAX/4G
Gain: 16 dB
• BTS & Infrastructure
Output IP3: +37 dBm
• Repeaters and Femtocells
Single Supply: +3V to +5V
• Multi-Channel Applications
50 Ohm Matched Input/Output
• Access Points
TE
24 Lead 4x4mm QFN Package: 16 mm2
Functional Diagram
General Description
LE
The HMC817LP4E is a GaAs pHEMT Dual Channel Low Noise Amplifier that is ideal for Cellular/3G
and LTE/WiMAX/4G basestation front-end receivers
operating between 550 and 1200 MHz. The amplifier
has been optimized to provide 0.5 dB noise figure,
24 dB gain and +37 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent with minimal external matching and bias
decoupling components. The HMC817LP4E shares
the same package and pinout with the HMC816LP4E
and HMC818LP4E LNAs. The HMC817LP4E can be
biased with +3V to +5V and features an externally
adjustable supply current which allows the designer
to tailor the linearity performance of each channel of
the LNA for each application.
B
SO
Amplifiers - Low Noise - SMT
7
SMT GaAs pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 550 - 1200 MHz
Electrical Specifications, TA = +25° C,
O
Rbias 1, 2 = 10k Ohms* Vdd = Vdd1 = Vdd2 = +5V, Idd = Idd1 = Idd2
Parameter
Vdd = +3 V
Min.
Frequency Range
Gain
Typ.
Max.
Min.
698 - 960
13
Gain Variation Over Temperature
Vdd = +5 V
Typ.
Max.
Min.
550 - 1200
16
11
0.003
Min.
13.5
11.5
MHz
16
dB
0.005
dB/ °C
0.5
28
22
22
17
dB
Output Return Loss
12
14
12
15
dB
21
dBm
16
12.5
16.5
18.5
0.85
Units
Noise Figure
14
0.55
Max.
550 - 1200
16
0.005
1.1
Typ.
Input Return Loss
Output Power for 1 dB
Compression (P1dB)
0.5
Max.
698 - 960
15
0.003
0.8
Typ.
20.5
0.6
16.5
1.1
dB
Saturated Output Power (Psat)
17
17.5
21
21.5
dBm
Output Third Order Intercept (IP3)
31
30
37
37
dBm
Supply Current (Idd)
24
34
44
24
34
44
65
95
124
65
95
124
mA
* Rbias resistor sets current, see application circuit herein
7-1
Information
furnished delivery
by Analog Devices
is believed
be accurate
and reliable.
However, no
For price, delivery,
and Road,
to placeChelmsford,
orders: AnalogMA
Devices,
Inc.,
For price,
and to
place toorders:
Hittite
Microwave
Corporation,
20 Alpha
01824
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that mayPhone:
result from 978-250-3343
its use. Specifications subject
to
change
without
notice. No
Fax: 978-250-3373
Order781-329-4700
On-line at •www.hittite.com
Phone:
Order
online
at
www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Application
Support: Phone: 1-800-ANALOG-D
Phone: 978-250-3343
or apps@hittite.com
Trademarks and registered trademarks areApplication
the property of theirSupport:
respective owners.
HMC817LP4E
v00.1108
SMT GaAs pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 550 - 1200 MHz
Broadband Gain & Return Loss
7
Gain vs. Temperature [1]
25
20
5
GAIN (dB)
-5
S22
-15
TE
12
S11
-35
10
0.6
0.8
1
1.2
1.4
FREQUENCY (GHz)
1.6
B
SO
GAIN (dB)
0.5
0.6
0.7
0.8
0.9
1
FREQUENCY (GHz)
1.1
1.2
O
0.8
0.9
1
FREQUENCY (GHz)
1.1
1.2
1.3
-15
-20
-25
-35
0.5
0
-5
-5
-15
+25 C
+85 C
- 40 C
-20
-25
0.6
0.7
0.8
0.9
1
FREQUENCY (GHz)
1.1
1.2
1.3
Reverse Isolation vs. Temperature [1]
0
-10
+25 C
+85 C
- 40 C
-30
ISOLATION (dB)
RETURN LOSS (dB)
-10
1.3
Output Return Loss vs. Temperature [1]
+25 C
+85 C
- 40 C
-10
-15
-20
-25
-30
0.5
0.7
-5
+25C
+85C
- 40C
18
10
0.6
0
20
12
0.5
2
Input Return Loss vs. Temperature [1]
22
14
1.8
LE
0.4
Gain vs. Temperature [2]
16
16
14
-25
0.2
+25C
+85C
- 40C
18
Vdd= 5V
Vdd= 3V
RETURN LOSS (dB)
RESPONSE (dB)
15
Amplifiers - Low Noise - SMT
22
S21
-30
0.6
0.7
0.8
0.9
1
FREQUENCY (GHz)
1.1
1.2
1.3
0.5
0.6
0.7
0.8
0.9
1
FREQUENCY (GHz)
1.1
1.2
1.3
[1] Vdd = 5V [2] Vdd = 3V
Information
furnisheddelivery
by Analog Devices
believed orders:
to be accurate
and reliable.
However, Corporation,
no
For price, delivery,
andRoad,
to place
orders: Analog
Devices,
For price,
and tois place
Hittite
Microwave
20 Alpha
Chelmsford,
MA
01824Inc.,
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may
result
from
its
use.
Specifications
subject
to
change
without
notice.
No
Phone: 978-250-3343
Fax: 978-250-3373 One
Order
On-line at www.hittite.com
Phone:
781-329-4700
•
Order
online
at
www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Application
Support: Phone: 1-800-ANALOG-D
Application
Support:
Phone: 978-250-3343
or apps@hittite.com
Trademarks and registered trademarks are
the property of their
respective owners.
7-2
HMC817LP4E
v00.1108
7
SMT GaAs pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 550 - 1200 MHz
Noise Figure vs. Temperature [1]
P1dB vs. Temperature
24
0.8
0.6
P1dB (dBm)
+85C
+25 C
0.4
18
Vdd=3V
16
TE
14
-40C
0.2
+25 C
+85 C
- 40 C
12
0
10
0.7
0.8
0.9
1
FREQUENCY (GHz)
1.1
Psat vs. Temperature
Vdd=5V
14
12
10
0.5
0.6
0.7
0.8
0.9
1
FREQUENCY (GHz)
44
1.1
Vdd=5V
1.2
1.3
+25 C
+85 C
- 40 C
40
B
SO
16
0.5
48
20
18
1.3
Output IP3 vs. Temperature
24
22
1.2
LE
0.6
Vdd=3V
IP3 (dBm)
0.5
0.6
0.7
0.8
0.9
1
FREQUENCY (GHz)
1.1
1.2
O
36
32
28
+25 C
+85 C
-40 C
Vdd=3V
24
20
0.5
1.3
Output IP3 and Supply Current vs.
Supply Voltage @ 700 MHz
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
FREQUENCY (GHz)
Output IP3 and Supply Current vs.
Supply Voltage @ 900 MHz
210
40
210
38
180
38
180
36
150
36
150
34
120
34
120
32
90
32
90
30
60
30
60
28
30
28
30
0
26
26
2.7
3.1
3.5
3.9
4.3
4.7
5.1
5.5
VOLTAGE SUPPLY (V)
2.7
3.1
3.5
3.9
4.3
4.7
5.1
Idd (mA)
40
Idd (mA)
IP3 (dBm)
Vdd=5V
20
IP3 (dBm)
NOISE FIGURE (dB)
22
Vdd= 5V
Vdd= 3V
1
Psat (dBm)
Amplifiers - Low Noise - SMT
1.2
0
5.5
VOLTAGE SUPPLY (V)
[1] Measurement reference plane shown on evaluation PCB drawing.
7-3
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery,
andRoad,
to place
orders: Analog
Devices,
For price, delivery and to place orders: Hittite Microwave Corporation,
20 Alpha
Chelmsford,
MA
01824Inc.,
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may
result
from
its
use.
Specifications
subject
to
change
without
notice.
No
Phone: 978-250-3343
Fax: 978-250-3373 Phone:
Order 781-329-4700
On-line at www.hittite.com
• Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Application
Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are
the property of their
respective owners.
Application
Support:
Phone: 978-250-3343
or apps@hittite.com
HMC817LP4E
v00.1108
SMT GaAs pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 550 - 1200 MHz
Power Compression @ 700 MHz [1]
40
Pout
Gain
PAE
30
20
0
-10
40
30
20
10
0
-10
-16 -14 -12 -10
-8
-6
-4
-2
0
2
4
6
-16
INPUT POWER (dBm)
-14
-12
-10
-8
-6
-4
-2
0
2
LE
INPUT POWER (dBm)
Power Compression @ 900 MHz [2]
Power Compression @ 700 MHz [2]
50
60
40
Pout
Gain
PAE
30
20
10
0
-10
B
SO
Pout (dBm), GAIN (dB), PAE (%)
Pout
Gain
PAE
TE
10
50
Amplifiers - Low Noise - SMT
Pout (dBm), GAIN (dB), PAE (%)
60
-16 -14 -12 -10 -8
-6
-4
-2
0
2
4
6
Pout (dBm), GAIN (dB), PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
50
50
Pout
Gain
PAE
40
30
20
10
0
-10
8
-16 -14 -12 -10
INPUT POWER (dBm)
Gain
P1dB
1
24
0.8
22
18
0.4
16
14
2.7
Noise Figure
3.1
3.5
3.9
4.3
4.7
SUPPLY VOLTAGE (V)
-6
-4
-2
0
2
4
6
5.1
0.2
0
5.5
1
Gain
P1dB
0.8
0.6
20
0.4
18
Noise Figure
0.2
16
14
2.7
3.1
3.5
3.9
4.3
4.7
5.1
NOISE FIGURE (dB)
0.6
NOISE FIGURE (dB)
20
GAIN (dB) & P1dB (dBm)
24
22
-8
INPUT POWER (dBm)
Gain, Power & Noise Figure
vs. Supply Voltage @ 900 MHz
O
Gain, Power & Noise Figure
vs. Supply Voltage @ 700 MHz
GAIN (dB) & P1dB (dBm)
7
Power Compression @ 900 MHz [1]
0
5.5
SUPPLY VOLTAGE (V)
[1] Vdd = 5V [2] Vdd = 3V
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery,
and Road,
to placeChelmsford,
orders: AnalogMA
Devices,
Inc.,
For price,
delivery
toforplace
orders:
Hittite Microwave
Corporation,
20 Alpha
01824
responsibility
is assumed
by Analogand
Devices
its use, nor
for any infringements
of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that mayPhone:
result from its
use.
Specifications
subject
to
change
without
notice.
No
978-250-3343
Fax: 978-250-3373 Phone:
Order781-329-4700
On-line at •www.hittite.com
Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Application
Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks areApplication
the property of theirSupport:
respective owners.
Phone: 978-250-3343
or apps@hittite.com
7-4
HMC817LP4E
v00.1108
7
SMT GaAs pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 550 - 1200 MHz
Cross Channel Isolation [1]
Magnitude Balance [1]
RFIN1 TO RFOUT2
RFIN2 TO RFOUT1
-20
-30
-40
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
0.7
0.8
0.7
0.8
0.9
LE
B
SO
1
0.6
0.6
1
1.1
1.2
1.3
Absolute Maximum Ratings
2
-2
0.5
-0.5
FREQUENCY (GHz)
Phase Balance [1]
-1
0
-1
0.5
1.3
FREQUENCY (GHz)
0
0.5
TE
ISOLATION (dB)
AMPLITUDE BALANCE (dB)
1
-10
PHASE BALANCE (degrees)
Amplifiers - Low Noise - SMT
0
0.9
1
1.1
1.2
Drain Bias Voltage (Vdd)
+6V
RF Input Power (RFIN)
(Vdd = +5 Vdc)
+10 dBm
Channel Temperature
150 °C
Continuous Pdiss (T= 85 °C)
(derate 16.67 mW/°C above 85 °C)
1.08 W
Thermal Resistance
(channel to ground paddle)
60 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
1.3
FREQUENCY (GHz)
O
Typical Supply
Current vs. Vdd (Rbias = 10kΩ)
Vdd (V)
Idd (mA)
2.7
24
3.0
34
3.3
44
4.5
82
5.0
95
5.5
105
Note: Amplifier will operate over full voltage ranges shown above.
Absolute Bias Register for Idd
Range & Recommended Bias Resistor
Vdd (V)
3V
5V
Rbias Ω
Idd (mA)
Min
Max
Recommended
10k
Open
circuit
10k
34
820
58
0
Open
circuit
2k
78
10k
95
With Vdd = 3V Rbias