0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
BLM8AD22S-60ABGY

BLM8AD22S-60ABGY

  • 厂商:

    AMPHENOL(安费诺)

  • 封装:

    OMP-780-16G-1

  • 描述:

    BLM8AD22S-60ABG/OMP780/REELDP

  • 数据手册
  • 价格&库存
BLM8AD22S-60ABGY 数据手册
BLM8AD22S-60ABG LDMOS 2-stage integrated Doherty MMIC Rev. 2 — 11 April 2019 Product data sheet 1. Product profile 1.1 General description The BLM8AD22S-60ABG is a dual section solution using Ampleon’s state of the art GEN8 LDMOS technology. It includes a 45 W 2-stage fully integrated Doherty MMIC in section A, and a 15 W, 2-stage MMIC in section B, allowing a 3-way 1:2:1 Doherty when both sections are externally combined. The carrier and peaking devices, input splitter and output combiner, of the 2-stage fully integrated Doherty MMIC of section A are integrated in package. This device is perfectly suited as final stage in massive MIMO or small cell applications in the frequency range from 2100 MHz to 2200 MHz. Available in gull wing. Table 1. Performance Typical RF performance at Tcase = 25 C; IDq = 105 mA (driver and final stages); VGS(peak)(A) = VGS(carrier)(A)  0.65 V; VGS(peak)(B) = VGS(carrier)(A)  1.25 V. Single carrier LTE; carrier spacing = 20 MHz; PAR = 7.6 dB at 0.01 % probability on CCDF. Test signal f VDS PL(AV) (MHz) (V) (W) single carrier LTE 20 MHz 2140 28 10 D ACPR5M (dB) (%) (dBc) 28.2 46.7 34.7 Gp 1.2 Features and benefits           Integrated input splitter in section A Integrated output combiner in section A Very high efficiency thanks to 3-way Doherty architecture Designed for broadband operation (frequency 2100 MHz to 2200 MHz) Integrated temperature compensated bias Independent control of carrier and peaking bias Integrated ESD protection Excellent thermal stability Source impedance 50 ; high power gain For RoHS compliance see the product details on the Ampleon website 1.3 Applications  RF power MMIC for multi-carrier and multi-standard GSM, W-CDMA and LTE base stations in the 2100 MHz to 2200 MHz frequency range BLM8AD22S-60ABG LDMOS 2-stage integrated Doherty MMIC 2. Pinning information 2.1 Pinning pin 1 index VDS(A1) VGS(A_P) VGS(A_C) RF_IN_A n.c. n.c. n.c. n.c. n.c. n.c. RF_IN_B n.c. VGS(B_P) VDS(B1) 1 2 3 4 5 6 7 16 RF_OUT_ VDS(A2) 8 9 10 11 12 13 14 15 RF_OUT_ VDS(B2) amp00859 Transparent top view The exposed backside of the package is the ground terminal of the device. Fig 1. Pin configuration 2.2 Pin description Table 2. BLM8AD22S-60ABG Product data sheet Pin description Symbol Pin Description VDS(A1) 1 drain-source voltage of driver stages of section A VGS(A_P) 2 gate-source voltage of peaking A_P VGS(A_C) 3 gate-source voltage of carrier A_C RF_IN_A 4 RF input section A n.c. 5 not connected n.c. 6 not connected n.c. 7 not connected n.c. 8 not connected n.c. 9 not connected n.c. 10 not connected RF_IN_B 11 RF input section B n.c. 12 not connected VGS(B_P) 13 gate-source voltage of peaking B_P VDS(B1) 14 drain-source voltage of driver stages of section B All information provided in this document is subject to legal disclaimers. Rev. 2 — 11 April 2019 © Ampleon Netherlands B.V. 2019. All rights reserved. 2 of 19 BLM8AD22S-60ABG LDMOS 2-stage integrated Doherty MMIC Table 2. Pin description …continued Symbol Pin Description RF_OUT_B/VDS(B2) 15 RF output section B / drain-source voltage of final stages of section B RF_OUT_A/VDS(A2) 16 RF output section A / drain-source voltage of final stages of section A GND flange RF ground 3. Ordering information Table 3. Ordering information Type number Package Name Description BLM8AD22S-60ABG - Version plastic, heatsink small outline package; 16 leads OMP-780-16G-1 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage - 65 V VGS gate-source voltage 0.5 +13 V Tstg storage temperature 65 +150 C - 225 C - 150 C Tj junction temperature Tcase case temperature [1] [1] Continuous use at maximum temperature will affect the reliability. For details refer to the online MTF calculator. 5. Thermal characteristics Table 5. Thermal characteristics Measured for total device. Symbol Parameter Rth(j-c) [1] BLM8AD22S-60ABG Product data sheet Conditions Value Unit thermal resistance from junction to case Tcase = 90 C [1] section A: PL = 7.08 W 1.86 K/W section B: PL = 2.51 W 3.48 K/W When operated with a 1-carrier W-CDMA with PAR = 9.9 dB. All information provided in this document is subject to legal disclaimers. Rev. 2 — 11 April 2019 © Ampleon Netherlands B.V. 2019. All rights reserved. 3 of 19 BLM8AD22S-60ABG LDMOS 2-stage integrated Doherty MMIC 6. Characteristics Table 6. DC characteristics Tcase = 25 C; per section unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Section A Carrier VGSq gate-source quiescent voltage VDS = 28 V; ID = 90 mA 1.5 2.2 2.65 V IGSS gate leakage current VGS = 1 V; VDS = 0 V - - 140 nA VGSq gate-source quiescent voltage VDS = 28 V; ID = 90 mA 1.3 1.7 2.0 V IGSS gate leakage current VGS = 1 V; VDS = 0 V - - 140 nA VGS = 0 V; VDS = 28 V - - 1.4 A VGS = 0 V; VDS = 28 V - - 1.4 A Peaking Final stages IDSS drain leakage current Driver stages IDSS drain leakage current Section B Peaking VGSq gate-source quiescent voltage VDS = 28 V; ID = 110 mA 1.5 2.2 2.65 V IGSS gate leakage current VGS = 1 V; VDS = 0 V - - 140 nA VGS = 0 V; VDS = 28 V - - 1.4 A VGS = 0 V; VDS = 28 V - - 1.4 A Final stages IDSS drain leakage current Driver stages IDSS drain leakage current Table 7. RF Characteristics Typical RF performance at Tcase = 25 C; VDS = 28 V; tp = 100 s;  = 10 %; f = 2170 MHz. Test signal: pulsed CW. Symbol Parameter Conditions Min Typ Max Unit 26.8 28.8 30.8 dB PL = 4 W 33 38 - % PL = PL(3dB) 45 50 - % Section A IDq = 90 mA (carrier); PL(AV) = 4 W; VGSq(peaking) = VGSq(carrier)  0.45 V. Gp power gain D drain efficiency RLin input return loss - 15 10 dB PL(3dB) output power at 3 dB gain compression 45 46.1 - dBm Section B IDq = 110 mA; PL(AV) = 6.3 W. BLM8AD22S-60ABG Product data sheet Gp power gain D drain efficiency 30.3 31.8 33.3 dB PL = 6.3 W 30 35 - % PL = PL(3dB) 43 48 - % RLin input return loss - 15 10 dB PL(3dB) output power at 3 dB gain compression 40.8 41.4 - dBm All information provided in this document is subject to legal disclaimers. Rev. 2 — 11 April 2019 © Ampleon Netherlands B.V. 2019. All rights reserved. 4 of 19 BLM8AD22S-60ABG LDMOS 2-stage integrated Doherty MMIC 7. Application information Table 8. Typical performance Tcase = 25 C; VDS = 28 V; IDq = 105 mA (driver and final stages). Test signal: 1-carrier LTE; PAR = 7.6 dB; unless otherwise specified, measured in an Ampleon 2110 MHz to 2170 MHz frequency band combined integrated Doherty application circuit. Symbol Parameter PL(3dB) output power at 3 dB gain compression f = 2140 MHz Conditions Min Typ Max Unit [1] - 47.9 - [2] - 23.7 -  dBm s21/s21(norm) normalized phase response f = 2140 MHz at 3 dB compression point D drain efficiency 8.5 dB OBO (PL(AV) = 40 dBm; PL(M) = 48.5 dBm); f = 2140 MHz - 46.7 - % Gp power gain PL(AV) = 40 dBm; f = 2140 MHz - 28.2 - dB Bvideo video bandwidth PL(AV) = 38 dBm set to obtain IMD3 = 32 dBc; 2-tone CW; f = 2140 MHz - 180 - MHz Gflat gain flatness PL(AV) = 40 dBm; f = 2110 MHz to 2170 MHz - 0.2 - dB ACPR20M adjacent channel power ratio (20M) PL(AV) = 40 dBm; f = 2140 MHz - 34.7 - dBc G/T gain variation with temperature f = 2140 MHz - 0.047 - dB/C - 0.042 - dB/C section A: Tcase = 40 C - >2.5 - section B: Tcase > 0 C - >1 - [3] section A section B K [1] Rollett stability factor f = 0.3 GHz to 6 GHz [3] Pulsed CW power sweep measurement ( = 10 %; tp = 100 s). [2] 25 ms CW power sweep measurement. [3] S-parameters measured with dual path broadband demo board. BLM8AD22S-60ABG Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 11 April 2019 © Ampleon Netherlands B.V. 2019. All rights reserved. 5 of 19 BLM8AD22S-60ABG LDMOS 2-stage integrated Doherty MMIC 50 mm R2 R3 C1 C1 R1 FB1 C4 C4 C4 C4 C3 C2 C5 C6 80 mm C5 C5 C7 X1 TM1 C5 C2 C1 R1 R3 FB1 C3 C4 C4 C4 C4 amp00860 Printed-Circuit Board (PCB): Rogers 4350; thickness = 0.508 mm. See Table 9 for a list of components. Fig 2. Component layout Table 9. List of components See Figure 2 for component layout. BLM8AD22S-60ABG Product data sheet Component Description Value Remarks C1 multilayer ceramic chip capacitor 10 F, 10 V Murata: SMD 0603 C2 multilayer ceramic chip capacitor 10 F, 35 V TDK: SMD 0805 C3 multilayer ceramic chip capacitor 15 pF Murata: SMD 0805 C4 multilayer ceramic chip capacitor 10 F, 50 V Murata: SMD 1206 C5 multilayer ceramic chip capacitor 2.4 pF Murata: SMD 0603 C6 multilayer ceramic chip capacitor 4.3 pF Murata: SMD 0805 C7 multilayer ceramic chip capacitor 2.4 pF Murata: SMD 0805 FB1 resistor 30  Murata: BLE32PN300SN1L R1 resistor 5.1  Multicomp: SMD 0603 R2 resistor 15 k Multicomp: SMD 0603 R3 resistor 825  Multicomp: SMD 0603 TM1 resistor 50  Multicomp: SMD 0603 X1 Hybrid coupler 2 dB Anaren: X3C20F1-02S All information provided in this document is subject to legal disclaimers. Rev. 2 — 11 April 2019 © Ampleon Netherlands B.V. 2019. All rights reserved. 6 of 19 xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx BLM8AD22S-60ABG Product data sheet 28 V C4 C2 C1 C4 C3 1 VGS(A_P) C4 C4 BLM8AD22S-60ABG VDS(A1) R2 VGS(A_P) R1 RF_OUT 2 Bias Peak VGS(A_C) VGS(A_C) R3 3 R1 C1 Rev. 2 — 11 April 2019 All information provided in this document is subject to legal disclaimers. RF_IN_A 4 n.c. 5 n.c. 6 C5 RF_IN n.c. RF_OUT_ Bias Carrier Asymmetric Doherty 7 VDS(A2) C6 16 C5 C5 X1 2 dB Hybrid Coupler TM1 n.c. C7 8 15 n.c. 10 RF_OUT_ VDS(B2) C5 11 RF_IN_B n.c. R1 VGS(B_P) 12 Bias Carrier VGS(B_P) 7 of 19 © Ampleon Netherlands B.V. 2019. All rights reserved. 13 R3 Class AB VDS(B1) C1 14 C3 C2 C4 28 V Fig 3. Electrical schematic C4 C4 C4 amp00936 BLM8AD22S-60ABG 9 LDMOS 2-stage integrated Doherty MMIC n.c. BLM8AD22S-60ABG LDMOS 2-stage integrated Doherty MMIC 7.1 Ruggedness The BLM8AD22S-60ABG is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 32 V; IDq = 90 mA (carrier section A); VGSq(peaking) = VGSq(carrier)  0.45 V (section A); IDq = 110 mA (section B); Pi corresponding to PL(5dB) OBO under ZS = 50  load; f = 2170 MHz (1-carrier W-CDMA; PAR = 9.9 dB); Tcase = 25 C per section unless otherwise specified. 7.2 Impedance information Table 10. Typical impedance for optimum Doherty operation (section A) Measured load-pull data; test signal: pulsed CW; Tcase = 25 C; VDS = 28 V; IDq = 90 mA (carrier); VGSq(peaking) = VGSq(carrier)  0.45 V; ZS = 50 ; tp = 100 s;  = 10 %. Typical values unless otherwise specified. tuned for optimum Doherty operation f ZL Gp(max) PL add [1] add [2] (MHz) () (dB) (dBm) (%) (%) 2110 2.70  j6.46 30.28 46.79 49.7 46.7 2140 2.69  j6.42 29.85 46.68 50.6 46.5 2170 3.19  j6.58 29.66 46.50 50.9 46.2 Section A [1] at 3 dB compression point. [2] at 38.5 dBm (nearly 8 dB OBO point). Table 11. Typical impedance (section B) Measured load-pull data at 3 dB gain compression point; test signal: pulsed CW; Tcase = 25 C; VDS = 28 V; IDq = 110 mA; ZS = 50 ; tp = 100 s;  = 10 %. Typical values unless otherwise specified f tuned for maximum output power (MHz) tuned for maximum drain efficiency ZL Gp(max) PL D AM/PM [1] ZL Gp(max) PL D AM/PM [1] () (dB) (dBm) (%) () () (dB) (dBm) (%) () Section B 2110 5.46  j3.02 33.98 42.31 55 2.5 3.32  j1.25 35.85 41.18 61.1 6.9 2140 6.20  j3.28 33.48 42.27 53 1.7 3.87  j1.43 35.40 41.47 60.4 5.1 2170 6.25  j3.27 33.37 42.25 53.1 1.8 3.30  j1.22 35.93 40.84 59.7 5.7 [1] AM/PM conversion. BLM8AD22S-60ABG Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 11 April 2019 © Ampleon Netherlands B.V. 2019. All rights reserved. 8 of 19 BLM8AD22S-60ABG LDMOS 2-stage integrated Doherty MMIC 7.3 Graphs amp00937 30 Gp (dB) -10 (1) -5 -10 -20 -15 -30 -30 -25 -40 3000 -35 -50 1800 2000 2200 2400 2600 amp00938 5 RLin ____ φs21/φs21(norm) (dB) (deg) (2) 10 0 2800 f (MHz) (3) (2) (1) 26 Tcase = 25 °C; VDS = 28 V; IDq1 + IDq2 = 105 mA (carrier and peaking stages); VGS(carrier)(A) = 2.65 V (carrier stage) VGS(peak)(A) = 2 V (peaking 1 stage) VGS(peak)(B) = 1.4 V (peaking 2 stage) Test signal: CW 30 34 38 42 46 PL (dBm) 50 Tcase = 25 °C; VDS = 28 V; IDq1 + IDq2 = 105 mA (carrier and peaking stages); VGS(carrier)(A) = 2.65 V (carrier stage) VGS(peak)(A) = 2 V (peaking 1 stage) VGS(peak)(B) = 1.4 V (peaking 2 stage) Test signal: 25 ms CW power sweep (1) magnitude of Gp (1) f = 2110 MHz (2) magnitude of RLin (2) f = 2140 MHz (3) f = 2170 MHz Fig 4. Wideband power gain and input return loss as function of frequency; typical values BLM8AD22S-60ABG Product data sheet Fig 5. Normalized phase response as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 11 April 2019 © Ampleon Netherlands B.V. 2019. All rights reserved. 9 of 19 BLM8AD22S-60ABG LDMOS 2-stage integrated Doherty MMIC amp00939 30 Gp (dB) 29 Gp 60 ηD (%) (1) (2) (3) 50 28 40 (1) (2) (3) 27 30 26 20 ηD 25 10 24 0 26 30 34 38 42 46 PL (dBm) 50 Tcase = 25 °C; VDS = 28 V; IDq1 + IDq2 = 105 mA (carrier and peaking stages); VGS(carrier)(A) = 2.65 V (carrier stage) VGS(peak)(A) = 2 V (peaking 1 stage) VGS(peak)(B) = 1.4 V (peaking 2 stage) Test signal: pulsed CW power sweep ( = 10 %; tp = 100 s). (1) f = 2110 MHz (2) f = 2140 MHz (3) f = 2170 MHz Fig 6. Power gain and drain efficiency as function of output power; typical values amp00940 -10 IMD (dBc) -20 (1) (2) IMD3 -30 IMD7 -40 (1) IMD5 -50 (1) (2) (2) -60 -70 1 102 10 tone spacing (MHz) 103 Tcase = 25 °C; VDS = 28 V; PL(AV) = 6.3 W; IDq1 + IDq2 = 105 mA (carrier and peaking stages); VGS(carrier)(A) = 2.65 V (carrier stage) VGS(peak)(A) = 2 V (peaking 1 stage) VGS(peak)(B) = 1.4 V (peaking 2 stage) Test signal: 2-tone power sweep; fc = 2140 MHz (1) IMD low (2) IMD high Fig 7. Intermodulation distortion as a function of tone spacing; typical values BLM8AD22S-60ABG Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 11 April 2019 © Ampleon Netherlands B.V. 2019. All rights reserved. 10 of 19 BLM8AD22S-60ABG LDMOS 2-stage integrated Doherty MMIC amp00941 30 Gp (dB) 29 (1) (2) (3) Gp 60 ηD (%) (1) (2) (3) 50 28 amp00942 -20 ACPR20M (dBc) (1) (2) (3) -30 -30 40 -40 27 30 26 20 -40 ACPR20M (1) (2) (3) -50 -50 ACPR40M ηD 25 -60 10 24 0 30 32 34 36 38 40 42 44 PL (dBm) -60 -70 46 -70 25 Tcase = 25 °C; VDS = 28 V; IDq1 + IDq2 = 105 mA (carrier and peaking stages); VGS(carrier)(A) = 2.65 V (carrier stage) VGS(peak)(A) = 2 V (peaking 1 stage) VGS(peak)(B) = 1.4 V (peaking 2 stage) 1-carrier LTE; PAR = 7.6 dB at 0.01 % probability CCDF. 29 (1) f = 2110 MHz (2) f = 2140 MHz (2) f = 2140 MHz (3) f = 2170 MHz (3) f = 2170 MHz Power gain and drain efficiency as function of output power; typical values BLM8AD22S-60ABG Product data sheet 33 37 41 PL (dBm) 45 Tcase = 25 °C; VDS = 28 V; IDq1 + IDq2 = 105 mA (carrier and peaking stages); VGS(carrier)(A) = 2.65 V (carrier stage) VGS(peak)(A) = 2 V (peaking 1 stage) VGS(peak)(B) = 1.4 V (peaking 2 stage) 1-carrier LTE; PAR = 7.6 dB at 0.01 % probability CCDF. (1) f = 2110 MHz Fig 8. -20 ACPR40M (dBc) Fig 9. Adjacent channel power ratio as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 11 April 2019 © Ampleon Netherlands B.V. 2019. All rights reserved. 11 of 19 BLM8AD22S-60ABG LDMOS 2-stage integrated Doherty MMIC amp00943 8.5 PARO (dB) 7.5 (1) (2) (3) PARO 6.5 50 PL(M) (dBm) 47.5 45 5.5 42.5 (1) (2) (3) 4.5 3.5 40 37.5 PL(M) 2.5 35 30 32 34 36 38 40 42 44 PL (dBm) 46 Tcase = 25 °C; VDS = 28 V; IDq1 + IDq2 = 105 mA (carrier and peaking stages); VGS(carrier)(A) = 2.65 V (carrier stage) VGS(peak)(A) = 2 V (peaking 1 stage) VGS(peak)(B) = 1.4 V (peaking 2 stage) 1-carrier LTE; PAR = 7.6 dB at 0.01 % probability CCDF. (1) f = 2110 MHz (2) f = 2140 MHz (3) f = 2170 MHz Fig 10. Output peak-to-average ratio and peak output power as function of output power; typical values BLM8AD22S-60ABG Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 11 April 2019 © Ampleon Netherlands B.V. 2019. All rights reserved. 12 of 19 BLM8AD22S-60ABG LDMOS 2-stage integrated Doherty MMIC 8. Package outline OMP-780-16G-1 (18.01) 0.22 B0.05 (15.44) (2.15) (0.75) 7.45 16 A L 0.05 A 15 13.2 B0.3 9.78 9.96(1) 16 (4.47) (7.04) R1.38 P2 0.1Z R0.16 max. 14 1 1 (12x) C metal protrusion 4x (ground) in corners (2) 1.5 0.35 (14x) (3) L 0.25 B 20.75 (1) L 0.05 B R1 DETAIL C SCALE 25:1 +0.08 3.92 0.03 R0.32 B 20.57 0.10 0.95 B0.15 H +4° 3.0° - 3° Min. 5.5 Min. 7.8 (0.20) compound rim all around the perimeter of the heatsink +0.06 0.00 - 0.02 (6) pin 17 (4) Gage plane 0.35 (7) R0.60 (4x) L 0.25 B Seating plane 5.5 (3) Min. 15.5 Min. 18.5 Package outline drawing: units in mm. Tolerances unless otherwise stated: Revision: Angle: B 1° Revision date: Dimension: B 0.05 OMP-780-16G-1 Third angle projection 0 3/1/2018 Sheet 1 of 2 Fig 11. Package outline OMP-780-16G-1 (sheet 1 of 2) BLM8AD22S-60ABG Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 11 April 2019 © Ampleon Netherlands B.V. 2019. All rights reserved. 13 of 19 BLM8AD22S-60ABG LDMOS 2-stage integrated Doherty MMIC OMP-780-16G-1 Drawing Notes Description Items Dimensions are excluding mold protrusion. Areas located adjacent to the leads have a maximum mold protrusion of 0.25 (1) mm (per side) and 0.62 mm max. in length. In between the 14 leads the protrusion is 0.25 mm max. At all other areas the mold protrusion is maximum 0.15 mm per side. See also detail B. (2) The metal protrusion (tie bars) in the corner will not stick out of the molding compound protrusions (detail A). (3) The lead dambar (metal) protrusions are not included. Add 0.14 mm max to the total lead dimension at the dambar location. (4) The hatched area indicated the exposed heatsink. (5) The leads and exposed heatsink are plated with matte Tin (Sn). Dimension is measured with respect to the bottom of the heatsink Datum H. Positive value means that the bottom of the (6) heatsink is higher than the bottom of the lead. (7) Gage plane (foot length) to be measured from the seating plane. location of metal protrusion (2) B DETAIL A SCALE 25:1 A 0.6 2m ax . (1) lead dambar location 5 0.2 1) x.( ma 5 0.1 ma x. (1) DETAIL B SCALE 50:1 Package outline drawing: units in mm. Tolerances unless otherwise stated: Revision: Angle: B 1° Revision date: Dimension: B 0.05 OMP-780-16G-1 Third angle projection 0 3/1/2018 Sheet 2 of 2 Fig 12. Package outline OMP-780-16G-1 (sheet 2 of 2) BLM8AD22S-60ABG Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 11 April 2019 © Ampleon Netherlands B.V. 2019. All rights reserved. 14 of 19 BLM8AD22S-60ABG LDMOS 2-stage integrated Doherty MMIC 9. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. Table 12. ESD sensitivity ESD model Class Charged Device Model (CDM); According to ANSI/ESDA/JEDEC standard JS-002 C1 [1] Human Body Model (HBM); According to ANSI/ESDA/JEDEC standard JS-001 1A [2] [1] CDM classification C1 is granted to any part that passes after exposure to an ESD pulse of 250 V. [2] HBM classification 1A is granted to any part that passes after exposure to an ESD pulse of 250 V. 10. Abbreviations Table 13. BLM8AD22S-60ABG Product data sheet Abbreviations Acronym Description CCDF Complementary Cumulative Distribution Function CW Continuous Wave ESD ElectroStatic Discharge GEN8 Eighth Generation GSM Global System for Mobile Communications LDMOS Laterally Diffused Metal Oxide Semiconductor LTE Long Term Evolution MIMO Multiple Input Multiple Output MMIC Monolithic Microwave Integrated Circuit MTF Median Time to Failure OBO Output Back Off PAR Peak-to-Average Ratio RoHS Restriction of Hazardous Substances SMD Surface Mounted Device W-CDMA Wideband Code Division Multiple Access All information provided in this document is subject to legal disclaimers. Rev. 2 — 11 April 2019 © Ampleon Netherlands B.V. 2019. All rights reserved. 15 of 19 BLM8AD22S-60ABG LDMOS 2-stage integrated Doherty MMIC 11. Revision history Table 14. Revision history Document ID Release date Data sheet status Change notice Supersedes BLM8AD22S-60ABG v.2 20190411 Product data sheet - BLM8AD22S-60ABG v.1 Modifications BLM8AD22S-60ABG v.1 BLM8AD22S-60ABG Product data sheet • • • • • • • • • • • Table 1 on page 1: table updated Table 5 on page 3: table updated Table 6 on page 4: table updated Table 7 on page 4: table updated Table 8 on page 5: table updated Table 9 on page 6: table updated Figure 3 on page 7: figure added Section 7.1 on page 8: section title changed Table 10 on page 8: table updated Table 11 on page 8: table added Section 7.3 on page 9: section added 20181214 Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 2 — 11 April 2019 - © Ampleon Netherlands B.V. 2019. All rights reserved. 16 of 19 BLM8AD22S-60ABG LDMOS 2-stage integrated Doherty MMIC 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ampleon.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Ampleon does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Ampleon sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Ampleon and its customer, unless Ampleon and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Ampleon product is deemed to offer functions and qualities beyond those described in the Product data sheet. 12.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, Ampleon does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Ampleon takes no responsibility for the content in this document if provided by an information source outside of Ampleon. In no event shall Ampleon be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, Ampleon’s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Ampleon. Right to make changes — Ampleon reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — Ampleon products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an BLM8AD22S-60ABG Product data sheet Ampleon product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Ampleon and its suppliers accept no liability for inclusion and/or use of Ampleon products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Ampleon makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Ampleon products, and Ampleon accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Ampleon product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Ampleon does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Ampleon products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Ampleon does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Ampleon products are sold subject to the general terms and conditions of commercial sale, as published at http://www.ampleon.com/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Ampleon hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Ampleon products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. All information provided in this document is subject to legal disclaimers. Rev. 2 — 11 April 2019 © Ampleon Netherlands B.V. 2019. All rights reserved. 17 of 19 BLM8AD22S-60ABG LDMOS 2-stage integrated Doherty MMIC Non-automotive qualified products — Unless this data sheet expressly states that this specific Ampleon product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Ampleon accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Ampleon’s warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Ampleon’s specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Ampleon for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Ampleon’s standard warranty and Ampleon’s product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own trademarks. 13. Contact information For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales BLM8AD22S-60ABG Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 11 April 2019 © Ampleon Netherlands B.V. 2019. All rights reserved. 18 of 19 BLM8AD22S-60ABG LDMOS 2-stage integrated Doherty MMIC 14. Contents 1 1.1 1.2 1.3 2 2.1 2.2 3 4 5 6 7 7.1 7.2 7.3 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 5 Ruggedness . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Impedance information . . . . . . . . . . . . . . . . . . . 8 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13 Handling information. . . . . . . . . . . . . . . . . . . . 15 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 16 Legal information. . . . . . . . . . . . . . . . . . . . . . . 17 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Contact information. . . . . . . . . . . . . . . . . . . . . 18 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Ampleon Netherlands B.V. 2019. All rights reserved. For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales Date of release: 11 April 2019 Document identifier: BLM8AD22S-60ABG
BLM8AD22S-60ABGY 价格&库存

很抱歉,暂时无法提供与“BLM8AD22S-60ABGY”相匹配的价格&库存,您可以联系我们找货

免费人工找货