AO3414L

Rev 3: Nov 2004 AO3414, AO3414L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. AO3414L ( Green Product ) is offered in a lead-free package. VDS (V) = 20V ID = 4.2 A RDS(ON) < 50mΩ (VGS = 4.5V) RDS(ON) < 63mΩ (VGS = 2.5V) RDS(ON) < 87mΩ (VGS = 1.8V) TO-236 (SOT-23) Top View D G D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±8 V 15 1.4 W 0.9 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 3.2 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V 4.2 TA=25°C Power Dissipation A Maximum 20 RθJA RθJL Typ 70 100 63 Max 90 125 80 Units °C/W °C/W °C/W AO3414, AO3414L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage RDS(ON) gFS VSD IS On state drain current Static Drain-Source On-Resistance Conditions Min ID=250µA, VGS=0V VDS=16V, VGS=0V 20 Typ Max Units V 1 TJ=55°C VDS=0V, VGS=±8V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=4.5V, ID=4.2A 0.4 15 TJ=125°C VGS=2.5V, ID=3.7A VGS=1.8V, ID=3.2A VDS=5V, ID=4.2A Forward Transconductance IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance µA 0.6 5 100 1 41 58 52 50 70 63 mΩ 67 11 87 mΩ 0.76 1 2 V A nA V A mΩ S 436 66 pF pF pF Ω Coss Crss Output Capacitance Reverse Transfer Capacitance VGS=0V, VDS=10V, f=1MHz Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 44 3 VGS=4.5V, VDS=10V, ID=4.2A 6.2 1.6 nC nC 0.5 5.5 nC ns 6.3 40 12.7 ns ns ns 12.3 3.5 ns nC SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) tr tD(off) tf trr Qrr Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time VGS=5V, VDS=10V, RL=2.7Ω, RGEN=6Ω IF=4A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=4A, dI/dt=100A/µs A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO3414, AO3414L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 16 10 8V VDS=5V 4.5V 8 2V 3V 2.5V 8 ID(A) ID (A) 12 6 4 4 VGS=1.5V 125°C 2 25°C 0 0 0 1 2 3 4 5 0 0.5 100 Normalized On-Resistance RDS(ON) (mΩ) 1.5 2 2.5 1.8 VGS=1.8V 80 VGS=2.5V 60 40 VGS=4.5V 20 VGS=2.5V 1.6 VGS=1.8V 1.4 ID=4.2A VGS=4.5V 1.2 1 0.8 0 4 8 12 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 100 1E+01 90 1E+00 ID=4.2A 80 125°C 1E-01 70 IS (A) RDS(ON) (mΩ) 1 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 125°C 60 50 1E-02 25°C 1E-03 25°C 40 1E-04 30 1E-05 20 0 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO3414, AO3414L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 800 5 VGS (Volts) Capacitance (pF) VDS=10V ID=4.2A 4 3 2 1 600 Ciss 400 Coss 200 0 0 0 2 4 6 0 8 100.0 10 20 TJ(Max)=150°C TA=25°C 15 20 TJ(Max)=150°C TA=25°C 100µs 15 RDS(ON) limited 10µs 1ms Power (W) 10.0 5 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics ID (Amps) Crss 0.1s 10ms 1.0 10 5 1s 10s DC 0 0.001 0.1 0.1 1 10 100 ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000