AO6409
20V P-Channel MOSFET
General Description
Product Summary
The AO6409 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as
a load switch applications.
VDS
-20V
ID (at VGS=-4.5V)
-5.5A
RDS(ON) (at VGS= -4.5V)
< 41mΩ
RDS(ON) (at VGS= -2.5V)
< 53mΩ
RDS(ON) (at VGS= -1.8V)
< 65mΩ
ESD Protected
TSOP6
Top View
D
Bottom View
Top View
D
1
6
D
D
2
5
D
G
3
4
S
G
S
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current
Pulsed Drain Current
C
Power Dissipation B
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev 5: Sep 2011
Steady-State
Steady-State
A
2.1
W
1.3
TJ, TSTG
Symbol
t ≤ 10s
V
-30
PD
TA=70°C
±8
-4.2
IDM
TA=25°C
Units
V
-5.5
ID
TA=70°C
Maximum
-20
RθJA
RθJL
www.aosmd.com
-55 to 150
Typ
48
75
37
°C
Max
60
90
45
Units
°C/W
°C/W
°C/W
Page 1 of 5
AO6409
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=-250µA, VGS=0V
-20
-1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±8V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250µΑ
-0.3
ID(ON)
On state drain current
VGS=-4.5V, VDS=-5V
-30
TJ=55°C
-5
±10
µA
V
34
41
49
59
VGS=-2.5V, ID=-4A
42
53
mΩ
VGS=-1.8V, ID=-2A
52
65
mΩ
20
TJ=125°C
Forward Transconductance
VDS=-5V, ID=-5.5A
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=-10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
µA
-0.9
gFS
Crss
Units
-0.57
VGS=-4.5V, ID=-5.5A
Static Drain-Source On-Resistance
Max
V
VDS=-20V, VGS=0V
IDSS
RDS(ON)
Typ
VGS=-4.5V, VDS=-10V, ID=-5.5A
A
-0.64
mΩ
S
-1
V
-2
A
905
pF
600
751
80
115
150
pF
48
80
115
pF
6
13
20
Ω
7.4
9.3
11
nC
0.8
1
1.2
nC
1.3
2.2
3.1
nC
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=-5.5A, dI/dt=500A/µs
20
26
32
Qrr
Body Diode Reverse Recovery Charge IF=-5.5A, dI/dt=500A/µs
40
51
62
VGS=-4.5V, VDS=-10V, RL=1.8Ω,
RGEN=3Ω
13
ns
9
ns
19
ns
29
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using
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