AOB280A60L

AOTF280A60L/AOT280A60L/AOB280A60L 600V, a MOS5 TM N-Channel Power Transistor General Description Product Summary • Proprietary αMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery VDS @ Tj,max 700V IDM 56A RDS(ON),max < 0.28Ω Qg,typ 23.5nC Eoss @ 400V 3.1mJ Applications 100% UIS Tested 100% Rg Tested • SMPS with PFC,Flyback and LLC topologies • Micro inverter with DC/AC inverter topology TO-220 TO-263 D2PAK TO-220F D D G D S G AOT280A60L D S S G G AOB280A60L AOTF280A60L S Orderable Part Number Package Type Form Minimum Order Quantity AOTF280A60L AOT280A60L AOB280A60L TO-220F Green TO-220 Green TO-263 Green Tube Tube Tape&Reel 1000 1000 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage Gate-Source Voltage (dynamic) AC( f>1Hz) TC=25°C Continuous Drain Current TC=100°C AOT(B)280A60L AOTF280A60L 600 Units V VGS ±20 V VGS ±30 V 14 ID 14* 9 9* A Pulsed Drain Current C IDM 56 Avalanche Current C IAR 3.6 A Repetitive avalanche energy C EAR 6.5 mJ Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25°C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds EAS 60 100 20 mJ Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D dv/dt TJ, TSTG TL 300 °C 30 0.2 AOT(B)280A60L AOTF280A60L Units 65 65 -4.2 °C/W RqCS Maximum Case-to-sink A Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature. Rev.3.0: September 2020 -55 to 150 W W/°C °C 156 1.3 PD Symbol RqJA V/ns www.aosmd.com 0.5 0.8 °C/W °C/W Page 1 of 6 AOTF280A60L/AOT280A60L/AOB280A60L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250μA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V VDS=5V, ID=250mA RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance gFS ID=250μA, VGS=0V, TJ=150°C 700 ID=250μA, VGS=0V 0.46 V o V/ C VDS=600V, VGS=0V 1 VDS=480V, TJ=125°C 10 mA ±100 nA 3 3.6 V VGS=10V, ID=7A 0.25 0.28 Ω Forward Transconductance VDS=10V, ID=7A 11 VSD Diode Forward Voltage IS=7A,VGS=0V IS ISM V Maximum Body-Diode Continuous Current 14 A Maximum Body-Diode Pulsed Current C 56 A Coss Output Capacitance Co(er) Effective output capacitance, energy H related Crss Effective output capacitance, time I related Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=100V, f=1MHz 0.86 S 1.2 DYNAMIC PARAMETERS Ciss Input Capacitance Co(tr) 2.4 1350 pF 38 pF 35 pF 140 pF VGS=0V, VDS=0 to 480V, f=1MHz VGS=0V, VDS=100V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=480V, ID=7A 1 pF 5.3 Ω 23.5 nC 9 nC Qgs Gate Source Charge Qgd Gate Drain Charge 5.5 nC tD(on) Turn-On DelayTime 25 ns tr Turn-On Rise Time 15 ns tD(off) Turn-Off DelayTime 44 ns tf trr Turn-Off Fall Time 10 ns 280 ns Irm Peak Reverse Recovery Current 23 Qrr Body Diode Reverse Recovery Charge A mC VGS=10V, VDS=400V, ID=7A, RG=5W Body Diode Reverse Recovery Time IF=7A, dI/dt=100A/ms, VDS=400V 3.8 A. The value of R qJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R qJA is the sum of the thermal impedance from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using