AON7401_101

AON7401 30V P-Channel MOSFET General Description Product Summary The AON7401 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. VDS ID (at VGS=-10V) -30V -35A RDS(ON) (at VGS=-10V) < 14mW RDS(ON) (at VGS=-6V) < 17mW 100% UIS Tested 100% Rg Tested DFN 3x3_EP Bottom View Top View D Top View S S S 1 8 D 2 7 3 6 D D G 4 5 D G Pin 1 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current C Continuous Drain Current TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 4: Mar. 2011 -12 Steady-State Steady-State W 12 3.1 RqJA RqJL www.aosmd.com W 2 TJ, TSTG Symbol t ≤ 10s A 29 PDSM TA=70°C A -9.7 PD TC=100°C V -80 IDSM TA=70°C ±25 -23 IDM TA=25°C Units V -35 ID TC=100°C Maximum -30 -55 to 150 Typ 30 60 3.5 °C Max 40 75 4.2 Units °C/W °C/W °C/W Page 1 of 5 AON7401 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250mA, VGS=0V -30 -1 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±25V Gate Threshold Voltage On state drain current VDS=VGS ID=-250mA -1.7 VGS=-10V, VDS=-5V -80 TJ=55°C VGS=-10V, ID=-9A 17 27 Diode Forward Voltage IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Gate resistance A 12.9 VSD Rg V VDS=-5V, ID=-9A IS=-1A,VGS=0V Reverse Transfer Capacitance nA VGS=-6V, ID=-7A Forward Transconductance -0.7 2060 VGS=0V, VDS=-15V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge VGS=-10V, VDS=-15V, ID=-9A mW mW S -1 V -25 A 2600 pF 370 pF 295 VGS=0V, VDS=0V, f=1MHz mA -3 19 TJ=125°C Units ±100 14 gFS Output Capacitance -2.2 16 Static Drain-Source On-Resistance Crss -5 11 RDS(ON) Coss Max V VDS=-30V, VGS=0V IDSS ID(ON) Typ pF 2.4 3.6 W 30 39 nC Qgs Gate Source Charge 4.6 nC Qgd Gate Drain Charge 10 nC tD(on) Turn-On DelayTime 11 ns tr Turn-On Rise Time 9.4 ns tD(off) Turn-Off DelayTime 24 ns tf trr Turn-Off Fall Time IF=-9A, dI/dt=500A/ms 14 Qrr Body Diode Reverse Recovery Charge IF=-9A, dI/dt=500A/ms 35 Body Diode Reverse Recovery Time VGS=-10V, VDS=-15V, RL=1.6W, RGEN=3W 12 ns 18 ns nC A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on RqJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RqJA is the sum of the thermal impedence from junction to case RqJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using