BCV29TA

SOT89 NPN SILICON PLANAR DARLINGTON TRANSISTOR BCV29 ISSUE 4 – JANUARY 1996 COMPLEMENTARY TYPE – BCV28 PARTMARKING DETAIL – EF C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage V CEO 30 V Emitter-Base Voltage V EBO 10 V Peak Pulse Current I CM 800 mA Continuous Collector Current IC 500 mA Power Dissipation at T amb =25°C P tot Operating and Storage Temperature Range T j:T stg 1 W -65 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V (BR)CBO 40 TYP. MAX. V I C=100µA Collector-Emitter Breakdown Voltage V (BR)CEO 30 V I C=10mA* Emitter-Base Breakdown Voltage V (BR)EBO 10 V I E=10µA Collector Cut-Off Current I CBO 100 10 nA µA V CB=30V V CB=30V, T amb=150°C Emitter Cut-Off Current I EBO 100 nA V EB=4V Collector-Emitter Saturation Voltage V CE(sat) 1 V I C=100mA, I B-0.1mA* Base-Emitter Saturation Voltage V BE(sat) 1.5 V I C=100mA, I B=0.1mA* Static Forward Current h FE Transfer Ratio 4000 10000 20000 4000 I C=100µA, V CE=1V† I C=10mA, V CE=5V* I C=100mA, V CE=5V* I C=500mA, V CE=5V* Transition Frequency fT 150 MHz I C=50mA, V CE=5V f = 20MHz Output Capacitance C obo 3.5 pF V CB=10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% For typical graphs see FMMT38A datasheet † Periodic Sample Test Only. Spice parameter data is available upon request for this device 3 - 24