BCV48TA

SOT89 PNP SILICON PLANAR DARLINGTON TRANSISTOR BCV48 ✪ ISSUE 3 – SEPTEMBER 1995 COMPLEMENTARY TYPE – BCV49 PARTMARKING DETAIL – EE C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage V CEO -60 V Emitter-Base Voltage V EBO -10 V Peak Pulse Current I CM -800 mA Continuous Collector Current IC -500 mA Power Dissipation at T amb =25°C P tot Operating and Storage Temperature Range T j:T stg 1 W -65 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V (BR)CBO -80 TYP. MAX. V I C=-100µA Collector-Emitter Breakdown Voltage V (BR)CEO -60 V I C=-10mA* Emitter-Base Breakdown Voltage V (BR)EBO -10 V I E=-10µA Collector Cut-Off Current I CBO -100 -10 nA µA V CB=-60V V CB=-60V, T amb=150°C Emitter Cut-Off Current I EBO -100 nA V EB=-4V Collector-Emitter Saturation Voltage V CE(sat) -1 V I C=-100mA, I B-0.1mA* Base-Emitter Saturation Voltage V BE(sat) -1.5 V I C=-100mA, I B=-0.1mA* Static Forward Current h FE Transfer Ratio 2000 4000 10000 2000 I C=-100µA, V CE=-1V† I C=-10mA, V CE=-5V* I C=-100mA, V CE=-5V* I C=-500mA, V CE=-5V* Transition Frequency fT 200 MHz I C=-50mA, V CE=-5V f = 20MHz Output Capacitance C obo 4.5 pF V CB=-10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% † Periodic Sample Test Only. 3 - 25