DI9430T

DI9430 SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SO-8 A 8 6 1 E Min Max A 3.94 4.19 B 3.20 3.40 C 0.381 0.495 D 2.67 3.05 E 0.89 1.02 C G 0.527 0.679 J J 0.41 Nominal K 0.94 1.09 0.152 B 4 3 2 Dim 5 TOP VIEW H G 7 D P K L M N Mechanical Data · · 0.025 4.37 4.62 N 4.39 4.70 P Maximum Ratings 0.939 Nominal All Dimensions in mm SO-8 Plastic Case Terminal Connections: See Outline Drawing and Internal Circuit Diagram above 25°C unless otherwise specified Characteristic Symbol Value Unit VDSS -20 V VGSS ±20 V ID ±5.3 ±4.2 ±15 A Pd 2.5 1.2 1.0 W Tj, TSTG -55 to +150 °C Symbol Value Unit Note 1a RQJA 50 °C/W Note 1 RQJC 25 °C/W Drain-Source Voltage Gate-Source Voltage Drain Current L M Note 1a Continuous @ TA = 25°C Note 1a Continuous @ TA = 70°C Pulsed @ TA = 25°C Maximum Power Dissipation Note 1a Note 1b Note 1c Operating and Storage Temperature Range Thermal Characteristics Characteristic Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Notes: 1. RQJA is the sum of the junction-to-case and case-to-ambient thermal resistance (RQJC + RQCA) where the case thermal reference is defined as the solder mounting surface of the drain pins. RQJC in this instance is 25°C/W but is dependent on the specific circuit board thermal design. 1a. With 1 in2 of 2 oz. copper mounting pad RQJA = 50°C\W. 1b. With 0.04 in2 of 2 oz. copper mounting pad RQJA = 105°C\W. 1c. With 0.006 in2 of 2 oz. copper mounting pad RQJA = 125°C\W. DS11505 Rev. E-4 1 of 4 DI9430 Electrical Characteristics25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit BVDSS -20 Test Condition — — V VGS = 0V, ID = -25 µA -1.0 -10 µA VDS = -16V, VGS = 0V OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Tj = 55°C IDSS — — Gate-Body Leakage, Forward IGSSF — — 100 nA VGS = 20V, VDS = 0V Gate-Body Leakage, Reverse IGSSR — — -100 nA VGS = -20V, VDS = 0V VGS(th) -1.0 -0.85 -2.0 -1.7 -3.0 -2.6 V VDS = VGS, ID = -25 µA RDS (ON) — — 0.055 0.077 0.067 0.082 0.120 0.060 0.090 0.080 0.115 0.190 W VGS = -10V, ID = -5.3A VGS = -10V, ID = -5.3A VGS = -6.0V, ID = -3.6A VGS = -4.5V, ID = -2.0A VGS = -4.5V, ID = -2.0A ID(ON) -15 -3.6 — — A VGS = -10V, VDS = -5.0V VGS = -4.5V, VDS = -5.0V gFS — 8.0 — m VDS = -15V, ID = -5.3A Input Capacitance CISS — 1430 — pF Output Capacitance COSS — 810 — pF Reverse Transfer Capacitance CRSS — 375 — pF ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Tj = 125°C Static Drain-Source On-Resistance Tj = 125°C On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS VDS = -10V, VGS = 0V f = 1.0MHz SWITCHING CHARACTERISTICS (Note 2) Turn-On Delay Time tD(ON) — 13 30 ns Turn-On Rise Time tr — 22 60 ns Turn-Off Delay Time tD(OFF) — 66 120 ns Turn-Off Fall Time tf — 28 100 ns Total Gate Charge Qg — 38 — nC Gate-Source Charge Qgs — 3.0 — nC Gate-Drain Charge Qgd — 12 — nC -2.2 A DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Max Continuous Drain-Source Diode IS — — Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Note: VSD — -1.04 -1.2 V trr — 80 100 ns VDD = -10V, ID = -1A VGEN = -10V, RGEN = 6.0W VDS = -10V. ID = -5.3A. VGS = -10V VGS = 0V, IS = -5.3A (Note 2) VGS = 0V, IF = -5.3A, dlF/dt = 100A/µs 2. Pulse Test width £ 300 µs, duty cycle £ 2%. DS11505 Rev. E-4 2 of 4 DI9430 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -20 VGS = -10 V ID, DRAIN-SOURCE CURRENT (A) -6.0 -5.0 -4.5 -15 -4.0 -10 -3.5 -5 0 -3.0 0 -1 -2 -3 -4 2.5 -4.0 2.0 -4.5 1.5 -5.0 -6.0 1.0 0.5 -10.0 0 -3 -6 -9 -12 -15 ID, DRAIN CURRENT (A) Fig. 2, On-Resistance vs Gate Voltage & Drain Current -10 1.6 1.2 1.0 0.8 0 25 50 75 100 125 150 -4 -2 -1 -2 -3 -4 -5 -6 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4, Transfer Characteristics Tj, JUNCTION TEMPERATURE ( C) Fig. 3, On-Resistance vs Junction Temperature DS11505 Rev. E-4 125 C -6 0 -25 25 C -8 1.4 -50 Tj = -55 C VDS = -10 V ID = -4.3 A VGS = -10 V ID, DRAIN CURRENT (A) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -3.5 V -5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1, On-Region Characteristics 0.6 3.0 3 of 4 DI9430 30 10 it N) 10 0 O S( RD m Li ms m s 1 s -ID, DRAIN CURRENT (A) 10 10 1.0 dc s 0.1 VGS = -20 V Single Pulse TA = 25 C 0.01 0.1 1.0 10 50 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 5, Maximum Safe Operating Area 1.0 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 0.1 0.1 RQJA (t) = r(t) b RQJA RQJA = See Note 1c 0.05 0.02 P(pk) 0.01 0.01 t1 Single Pulse t2 TJ - TA = PPK b RQJA(t) Duty Cycle, D = t1/t2 0.001 0.0001 0.001 0.01 0.1 1.0 10 100 300 t1, SQUARE WAVE PULSE DURATION (seconds) Fig. 6, Typical Normalized Transient Thermal Impedance Curves Remark: Thermal characterization performed under conditions of Note 1c. Better thermal design such as shown in Notes 1a and 1b or 1d will offer lower RQJA values and allow junction to reach thermal equilibrium sooner. DS11505 Rev. E-4 4 of 4 DI9430