DMN10H170SVT-7

DMN10H170SVT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) max ID max TA = +25°C 160mΩ @ VGS = 10V 2.6A 200mΩ @ VGS = 4.5V 2.3A V(BR)DSS      Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data  Case: TSOT26 making it ideal for high-efficiency power management applications.  Case Material: Molded Plastic, “Green” Molding Compound. Applications  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections: See Diagram  Terminals: Finish  Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3  Weight: 0.015 grams (Approximate) UL Flammability Classification Rating 94V-0    Power Management Functions Battery Operated Systems and Solid-State Relays Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D TSOT26 D 1 6 D D 2 5 D G 3 4 S G S Top View Pin-Out Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMN10H170SVT-7 DMN10H170SVT-13 Notes: Case TSOT26 TSOT26 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain