DMN2300UFB4
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
BVDSS
RDS(ON)
20V
175m @ VGS = 4.5V
240m @ VGS = 2.5V
360m @ VGS = 1.8V
500m @ VGS = 1.5V
ID
TA = +25°C
(Note 5)
1.30A
1.11A
0.91A
0.82A
Footprint of Just 0.6mm2 – Thirteen Times Smaller Than SOT23
0.4mm Profile – Ideal for Low Profile Applications
Low Gate Threshold Voltage
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description
Mechanical Data
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Case: X2-DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper Leadframe. Solderable
per MIL-STD-202, Method 208 e4
Weight: 0.001 grams (Approximate)
Load Switch
X2-DFN1006-3
S
D
G
ESD PROTECTED
Top View
Bottom View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN2300UFB4-7B
Notes:
Marking
NL
Reel Size (inches)
7
Tape Width (mm)
8
Quantity per Reel
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain
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