DMN2990UDJ

DMN2990UDJ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT V(BR)DSS 20V Features RDS(ON) max ID max TA = 25°C 0.99Ω @ VGS = 4.5V 450mA 1.2Ω @ VGS = 2.5V 400mA 1.8Ω @ VGS = 1.8V 330mA 2.4Ω @ VGS = 1.5V 300mA • • • • • • • • • • • Description This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data • • Applications • • • • • • • General Purpose Interfacing Switch Power Management Functions DC-DC Converters Analog Switch Dual N-Channel MOSFET Low On-Resistance Very low Gate Threshold Voltage, 1.0V max Low Input Capacitance Fast Switching Speed Ultra-Small Surface Mount Package 1mm x 1mm Low Package Profile, 0.45mm Maximum Package height ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 standards for High Reliability • Case: SOT963 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.027 grams (approximate) D1 G2 S2 S1 G1 D2 SOT963 Top View ESD PROTECTED Top View Schematic and Transistor Diagram Ordering Information (Note 4) Part Number DMN2990UDJ-7 Notes: Case SOT963 Packaging 10K/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.  3. Halogen- and Antimony-free "Green” products are defined as those which contain