DMN32D2LV
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Mechanical Data
Dual N-Channel MOSFET
Case: SOT563
Low On-Resistance
Case Material: Molded Plastic, “Green” Molding Compound.
Very Low Gate Threshold Voltage, 1.2V max
Low Input Capacitance
Moisture Sensitivity: Level 1 per J-STD-020
Fast Switching Speed
Terminal Connections: See Diagram
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
ESD Protected Gate
Weight: 0.006 grams (Approximate)
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
UL Flammability Classification Rating 94V-0
SOT563
G1
S1
S2
G2
D1
Top View
Schematic and Transistor Diagram
Top View
ESD PROTECTED
D2
Ordering Information (Note 4)
Part Number
DMN32D2LV-7
Notes:
Case
SOT563
Packaging
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain
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