DMN3731UFB4
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
RDS(ON)
ID
TA = +25°C
460m @ VGS= 4.5V
1.2A
560m @ VGS= 2.5V
1.0A
BVDSS
30V
Features and Benefits
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Applications
Load Switch
Portable Applications
Power Management Functions
0.4mm Ultra Low Profile Package for Thin Application
0.6mm2 Package Footprint, 10 times Smaller than SOT23
Low VGS(TH), Can Be Driven Directly From A Battery
Low RDS(ON)
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Case: X2-DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper Leadframe; Solderable
per MIL-STD-202, Method 208 e4
Weight: 0.001 grams (Approximate)
D
X2-DFN1006-3
S
G
D
G
ESD PROTECTED
Bottom View
Gate Protection
Diode
Top View
S
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN3731UFB4-7B
Notes:
Marking
BR
Reel Size (inches)
7
Tape Width (mm)
8
Tape Pitch (mm)
2
Quantity Per Reel
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain
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