LMN400E01-7

PART OBSOLETE - CONTACT US LMN400E01 400mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND ESD PROTECTED N-MOSFET Features Voltage Controlled Small Signal Switch N-MOSFET with ESD Gate Protection Ideally Suited for Automated Assembly Processes Lead Free By Design/ROHS Compliant (Note 1) "Green" Device (Note 2) Case: SOT363 Case Material: Molded Plastic. "Green Molding" Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL- STD -202, Method 208 Marking Information: See Page 8 Ordering Information: See Page 8 Weight: 0.006 grams (approximate) • • • • • • • • • Description LMN400E01 is best suited for applications where the load needs to be turned on and off using control circuits like micro-controllers, comparators etc. particularly at a point of load. It features a discrete pass transistor with stable VCE(SAT) which does not depend on input voltage and can support continuous maximum current of 400 mA. It also contains an ESD protected discrete N-MOSFET that can be used as control. The component can be used as a part of a circuit or as a stand alone discrete device. Reference Device Type PNP Q1 Transistor Q2 N-MOSFET SOT363 C_Q1 6 6 R1(NOM) R2(NOM) Figure 10K 220 2   2 B_Q1 S_Q2 5 4 C 5 Q1 PNP 4 B E S R2 220 Q2 G NMOS R1 10K D 1 2 3 1 Top View Ordering Information Notes: 3 2 E_Q1 G_Q2 D_Q2 Top View Internal Schematic (Note 3) Device Packaging Shipping LMN400E01-7 SOT363 3000/Tape & Reel 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information PM5 = Product Type Marking Code, YM = Date Code Marking Y = Year, e.g., Y = 2011 M = Month, e.g., 9 = September YM OBSOLETE – PART DISCONTINUED • • • • • Mechanical Data PM5 Date Code Key Year Code Month Code LMN400E01 2006 2007 2008 2009 2010 2011 2012 2013 T U V W X Y Z A Jan 1 Feb 2 Document number: DS30750 Rev. 9 - 4 Mar 3 Apr 4 May 5 Jun 6 1 of 10 www.diodes.com Jul 7 Aug 8 Sep 9 Oct O Nov N Dec D October 2021 © Diodes Incorporated LMN400E01 Maximum Ratings, Total Device @TA = 25°C unless otherwise specified Characteristic Symbol Value PD 200 mW Power Derating Factor above 37.5°C Pder 1.6 mW/°C Output Current Iout 400 mA Symbol Value Unit Tj, TSTG -55 to +150 °C RθJA 625 °C/W OBSOLETE – PART DISCONTINUED Power Dissipation (Note 4) Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Operating and Storage Temperature Range Thermal Resistance, Junction to Ambient Air Maximum Ratings: Pre-Biased PNP Transistor (Q1) (Note 4) @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Supply Voltage Input Voltage Output Current Symbol VCBO VCEO Vcc Vin IC Maximum Ratings: ESD Protected N-Channel MOSFET (Q2) Characteristic Drain-Source Voltage Drain Gate Voltage (RGS ≤ 1M Ohm) Gate-Source Voltage Drain Current (Note 4) Continuous Source Current Notes: Unit Value -50 -50 -50 -6 to +5 -400 Unit V V V V mA @TA = 25°C unless otherwise specified Continuous Pulsed (tp