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SBR3U30P1-7

SBR3U30P1-7

  • 厂商:

    BCDSEMI(美台)

  • 封装:

    PowerDI123

  • 描述:

    SBR超势垒二极管 30V 2.80 x 1.78mm SMT PowerDI123 3A

  • 数据手册
  • 价格&库存
SBR3U30P1-7 数据手册
SBR3U30P1 3.0A SBR® SUPER BARRIER RECTIFIER PowerDI®123 Features • • • • • • • • • • • Mechanical Data Ultra Low Forward Voltage Drop Superior Reverse Avalanche Capability Patented Interlocking Clip Design for High Surge Current Capacity Patented Super Barrier Rectifier Technology Soft, Fast Switching Capability 150ºC Operating Junction Temperature ±16KV ESD Protection (HBM, 3B) ±25KV ESD Protection (IEC61000-4-2 Level 4, Air Discharge) Lead Free Finish, RoHS Compliant (Note 1) “Green” Molding Compound (No Br, Sb) Qualified to AEC-Q101 Standards for High Reliability • • • • • • • • ® Case: PowerDI 123 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Polarity Indicator: Cathode Band Terminals: Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.018 grams (approximate) Top View Maximum Ratings @TA = 25°C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (See Figure 1) Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load Non-Repetitive Avalanche Energy (TJ = 25°C, IAS = 5A, L = 8.5 mH) Repetitive Peak Avalanche Energy (1µs, 25°C) Symbol VRRM VRWM VRM VR(RMS) IO Value Unit 30 V 21 3.0 V A IFSM 75 A EAS 105 mJ PARM 1100 W Symbol Value Unit Thermal Characteristics Characteristic Maximum Thermal Resistance Thermal Resistance Junction to Soldering (Note 2) Thermal Resistance Junction to Ambient (Note 3) Thermal Resistance Junction to Ambient (Note 4) Operating and Storage Temperature Range (Note 5) Notes: RθJS RθJA RθJA TJ, TSTG 5 178 123 -65 to +150 ºC/W ºC 1. RoHS revision 13.2.2003. High temperature solder exemption applied, see EU Directive Annex Note 7. 2. Theoretical RθJS calculated from the top center of the die straight down to the PCB cathode tab solder junction. 3. FR-4 PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf. 4. Polymide PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf SBR and PowerDI are registered trademark of Diodes Incorporated. SBR3U30P1 Document number: DS30974 Rev. 6 - 2 1 of 4 www.diodes.com October 2008 © Diodes Incorporated SBR3U30P1 Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Reverse Breakdown Voltage (Note 5) Symbol Min Typ Max Unit V(BR)R 30 - - V Forward Voltage Drop VF Leakage Current (Note 5) Notes: IR 0.32 0.35 0.43 0.23 0.26 0.38 V - 70 150 6 12 150 400 15 20 µA µA mA mA IR = 400µA IF = 0.5A, TJ = 25ºC IF = 1.0A, TJ = 25ºC IF = 3.0A, TJ = 25ºC IF = 0.5A, TJ = 125ºC IF = 1.0A, TJ = 125ºC IF = 3.0A, TJ = 125ºC VR = 5V, TJ = 25ºC VR = 30V, TJ = 25ºC VR = 5V, TJ = 125ºC VR = 30V, TJ = 125ºC 5. Short duration pulse test used to minimize self-heating effect. IF, INSTANTANEOUS FORWARD CURRENT (mA) PD, POWER DISSIPATION (W) 1.2 1 0.8 0.6 0.4 0.2 0 0 1 2 3 IF(AV), AVERAGE FORWARD CURRENT (A) Fig. 1 Forward Power Dissipation 10,000 TA=100° C 1,000 TA=150°C TA= -65°C 100 10 TA=25°C 1 0.1 4 0 0.2 0.4 0.6 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 10,000 1.0E+02 T A=150°C 1.0E+01 f = 1.0MHz CT, TOTAL CAPACITANCE (pF) IR, INSTANTANEOUS REVERSE CURRENT (mA) - 0.28 0.31 0.39 0.20 0.23 0.35 Test Condition TA=100° C 1.0E+00 1.0E-01 TA=25°C 1.0E-02 1.0E-03 1.0E-04 1,000 100 10 TA= -65° C 1.0E-05 1 0 5 10 15 20 25 30 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 3 Typical Reverse Characteristics 0 5 10 15 20 25 30 VR, DC REVERSE VOLTAGE (V) Fig. 4 Total Capacitance vs. Reverse Voltage SBR and PowerDI are registered trademark of Diodes Incorporated. SBR3U30P1 Document number: DS30974 Rev. 6 - 2 2 of 4 www.diodes.com October 2008 © Diodes Incorporated SBR3U30P1 TA, DERATED AMBIENT TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (A) 5.0 4.0 3.0 160 150 140 130 120 110 2.0 1.0 0 0 80 70 200 0 10 5 20 15 25 VR, DC REVERSE VOLTAGE (V) Fig. 6 Operating Temperature Derating 30 10,000 PARM, MAXIMUM AVALANCHE POWER (W) PARM, AVALANCHE PEAK PULSE POWER DERATING IN PERCENTAGE (%) 90 60 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Fig. 5 Forward Current Derating Curve 25 120 100 80 60 40 20 0 100 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 7 Pulse Derating Curve 1,000 175 100 10 1 0.001 0.01 0.1 1 10 100 TP, PULSE DURATION (uS) Fig. 8 Maximum Avalanche Power Curve 1,000 SBR and PowerDI are registered trademark of Diodes Incorporated. SBR3U30P1 Document number: DS30974 Rev. 6 - 2 3 of 4 www.diodes.com October 2008 © Diodes Incorporated SBR3U30P1 Ordering Information (Note 6) Part Number SBR3U30P1-7 Notes: Case ® PowerDI 123 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YM 3U3 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: T = 2006) M = Month (ex: 9 = September) 3U3 Date Code Key Year Code 2006 T Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D 2007 U 2008 V 2009 W 2010 X 2011 Y 2012 Z 2013 A 2014 B 2015 C Package Outline Dimensions B ® C PowerDI 123 Dim Min Max Typ A 3.50 3.90 3.70 B 2.60 3.00 2.80 C 1.63 1.93 1.78 D 0.93 1.00 0.98 E 0.85 1.25 1.00 H 0.15 0.25 0.20 L 0.55 0.75 0.65 L1 1.80 2.20 2.00 L2 0.95 1.25 1.10 All Dimensions in mm E D H L L1 E L2 A Suggested Pad Layout X1 Y2 G X2 Y1 Dimensions G X1 X2 Y1 Y2 Value (in mm) 1.0 2.2 0.9 1.4 1.4 IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. SBR and PowerDI are registered trademark of Diodes Incorporated. SBR3U30P1 Document number: DS30974 Rev. 6 - 2 4 of 4 www.diodes.com October 2008 © Diodes Incorporated
SBR3U30P1-7 价格&库存

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SBR3U30P1-7
  •  国内价格
  • 1+0.97513
  • 100+0.90613
  • 300+0.83713
  • 500+0.76813
  • 2000+0.73363
  • 5000+0.71293

库存:19