BD239C-S

BD239, BD239A, BD239B, BD239C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the BD240 Series TO-220 PACKAGE (TOP VIEW) 30 W at 25°C Case Temperature 2 A Continuous Collector Current 4 A Peak Collector Current B 1 C 2 Customer-Specified Selections Available E 3 This series is OBSOLETEANDNOT recommended for new designs. Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BD239 Collector-emitter voltage (RBE = 100 Ω) BD239A VCER BD239C BD239 Collector-emitter voltage (IC = 30 mA) Emitter-base voltage Continuous collector current BD239A BD239B BD239C V CEO VEBO IC Peak collector current (see Note 1) ICM Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot Continuous base current Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. UNIT 55 E T E L O S B O BD239B VALUE 70 90 115 45 60 80 100 5 2 4 IB 0.6 Ptot 2 ½LIC2 V V A A A 30 W 32 mJ Tj -65 to +150 TL 250 Tstg V -65 to +150 W °C °C °C This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 0.24 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 Ω, V BE(off) = 0, RS = 0.1 Ω, VCC = 20 V. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD239, BD239A, BD239B, BD239C NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER V(BR)CEO ICES ICEO IEBO hFE VCE(sat) VBE hfe |hfe | Collector-emitter breakdown voltage TEST CONDITIONS IC = 30 mA MIN IB = 0 (see Note 5) BD239 45 BD239A 60 BD239B 80 BD239C 100 TYP MAX V VCE = 55 V VBE = 0 BD239 0.2 Collector-emitter VCE = 70 V VBE = 0 BD239A 0.2 cut-off current VCE = 90 V VBE = 0 BD239B 0.2 VCE = 115 V VBE = 0 BD239C 0.2 Collector cut-off VCE = 30 V IB = 0 BD239/239A 0.3 current VCE = 60 V IB = 0 BD239B/239C 0.3 VEB = 5V IC = 0 Forward current VCE = 4V IC = 0.2 A transfer ratio VCE = 4V IC = 1A 0.2 A IC = 1A 4V IC = 1A Emitter cut-off current Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio IB = VCE = UNIT mA mA 1 µA (see Notes 5 and 6) 0.7 V (see Notes 5 and 6) 1.3 V (see Notes 5 and 6) 40 15 E T E L O S B O VCE = 10 V IC = 0.2 A f = 1 kHz 20 VCE = 10 V IC = 0.2 A f = 1 MHz 3 NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER MIN TYP 4.17 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † TEST CONDITIONS † MIN ton Turn-on time IC = 200 mA IB(on) = 20 mA IB(off) = -20 mA 0.3 µs toff Turn-off time VBE(off) = -3.4 V RL = 150 Ω tp = 20 µs, dc ≤ 2% 0.8 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
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 JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BD239, BD239A, BD239B, BD239C NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE = 4 V tp = 300 µs, duty cycle < 2% TC = 25°C TC = 80°C 100 10 0·01 TCS631AE 10 VCE(sat) - Collector-Emitter Saturation Voltage - V TCS631AG 1000 hFE - DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT IC = 100 mA IC = 300 mA IC = 1 A 1·0 0·1 E T E L O S B O 0·1 0·01 0·1 1·0 IC - Collector Current - A 1·0 10 100 1000 IB - Base Current - mA Figure 1. Figure 2. BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT 1·0 TCS631AF VBE - Base-Emitter Voltage - V VCE = 4 V TC = 25°C 0·9 0·8 0·7 0·6 0·5 0·01 0·1 1·0 IC - Collector Current - A Figure 3.
  
 JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BD239, BD239A, BD239B, BD239C NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 100 SAS631AE tp = 300 µs, d = 0.1 = 10% tp = 1 ms, d = 0.1 = 10% tp = 10 ms, d = 0.1 = 10% DC Operation 10 1·0 0·1 BD239 BD239A BD239B BD239C E T E L O S B O 0·01 1·0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS631AB Ptot - Maximum Power Dissipation - W 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 5.
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 JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.