AMC1311DWVR

Product Folder Order Now Tools & Software Technical Documents Support & Community Reference Design AMC1311 ZHCSH46A – DECEMBER 2017 – REVISED JUNE 2018 AMC1311x 高阻抗 2V 输入增强型隔离放大器 1 特性 • 1 • • • • • • • 2 应用 2V 高阻抗输入电压范围，针对隔离式电压测量进 行优化 低失调误差和温漂： – AMC1311B：±1.5mV（最大值），±15µV/°C （最大值） – AMC1311：±9.9mV（最大值），±20µV/°C （典型值） 固定增益：1 极低增益误差和温漂： – AMC1311B：±0.3%（最大值），±45ppm/°C （最大值） – AMC1311：±1%（最大值），±30ppm/°C（典 型值） 低非线性和温漂：0.01%，1ppm/°C（典型值） 高侧 3.3V 运行电压 (AMC1311B) 高侧电源缺失指示 安全相关认证： – 符合 DIN V VDE V 0884-11 (VDE V 0884-11): 2017-01 标准的 7000 VPK 增强型隔离 – 符合 UL1577 标准且长达 1 分钟的 5000VRMS 隔离 – CAN/CSA No. 5A 组件接受服务通知、IEC 60950-1 和 IEC 60065 终端设备标准 • 可用于以下应用的隔离式电压检测： – 电机驱动器 – 变频器 – 不间断电源 3 说明 AMC1311 是一款隔离式精密放大器，此放大器的输出 与输入电路由抗电磁干扰性能极强的隔离栅隔开。根据 VDE V 0884-11 和 UL1577 标准，该隔离栅经认证可 提供高达 7kVPEAK 的增强型电隔离。与隔离式电源结 合使用时，该隔离放大器可将以不同共模电压电平运行 的系统的各器件隔开，并防止较低电压器件损坏。 AMC1311 的高阻抗输入针对连接高压电阻分压器或具 有高输出电阻的其他电压信号源的情况进行了优化。器 件性能出色，支持在闭环系统中进行精确的低温漂电压 或温度检测和控制。集成的高侧电源电压缺失检测功能 可简化系统级设计和诊断。 AMC1311 提供两种性能级别选项：AMC1311B 的额 定扩展工业温度范围为 –55°C 至 +125°C，AMC1311 为 –40°C 至 +125°C。 器件信息(1) 器件编号 封装 AMC1311x SOIC (8) 封装尺寸（标称值） 5.85mm × 7.50mm (1) 如需了解所有可用封装，请参阅产品说明书末尾的可订购产品 附录。 简化原理图 HV+ Gate Driver R1 AMC1311B RF Power Supply VIN CF Gate Driver R3 3.0 V to 5.5 V SHTDN VDD1 GND1 HV- Reinforced Isolation VDD1 Detection R2 VOUTP ADS7263 14-Bit ADC VOUTN VDD2 3.0 V to 5.5 V GND2 GND 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. English Data Sheet: SBAS786 AMC1311 ZHCSH46A – DECEMBER 2017 – REVISED JUNE 2018 www.ti.com.cn 目录 1 2 3 4 5 6 7 特性 .......................................................................... 应用 .......................................................................... 说明 .......................................................................... 修订历史记录 ........................................................... 器件比较表 ............................................................... Pin Configuration and Functions ......................... Specifications......................................................... 7.1 7.2 7.3 7.4 7.5 7.6 7.7 7.8 7.9 7.10 7.11 7.12 8 1 1 1 2 3 3 4 Absolute Maximum Ratings ...................................... 4 ESD Ratings.............................................................. 4 Recommended Operating Conditions....................... 4 Thermal Information .................................................. 5 Power Ratings........................................................... 5 Insulation Specifications............................................ 6 Safety-Related Certifications..................................... 7 Safety Limiting Values .............................................. 7 Electrical Characteristics........................................... 8 Switching Characteristics ...................................... 10 Insulation Characteristics Curves ........................ 11 Typical Characteristics .......................................... 12 Detailed Description ............................................ 19 8.1 8.2 8.3 8.4 9 Overview ................................................................. Functional Block Diagram ....................................... Feature Description................................................. Device Functional Modes........................................ 19 19 19 21 Application and Implementation ........................ 22 9.1 Application Information............................................ 22 9.2 Typical Application .................................................. 22 9.3 Do's and Don'ts ...................................................... 24 10 Power Supply Recommendations ..................... 25 11 Layout................................................................... 26 11.1 Layout Guidelines ................................................. 26 11.2 Layout Example .................................................... 26 12 器件和文档支持 ..................................................... 27 12.1 12.2 12.3 12.4 12.5 12.6 文档支持 ............................................................... 接收文档更新通知 ................................................. 社区资源................................................................ 商标 ....................................................................... 静电放电警告......................................................... 术语表 ................................................................... 27 27 27 27 27 27 13 机械、封装和可订购信息 ....................................... 27 4 修订历史记录 注：之前版本的页码可能与当前版本有所不同。 Changes from Original (December 2017) to Revision A Page • 已更改 Reinforced Isolation Capacitor Lifetime Projection figure ........................................................................................ 11 2 版权 © 2017–2018, Texas Instruments Incorporated AMC1311 www.ti.com.cn ZHCSH46A – DECEMBER 2017 – REVISED JUNE 2018 5 器件比较表 参数 AMC1311B AMC1311 3.0V 至 5.5V 4.5V 至 5.5V –55°C 至 +125°C -40°C 至 125°C 4.5V ≤ VDD1 ≤ 5.5V ±1.5mV ±9.9mV 3.0V ≤ VDD1 ≤ 5.5V ±2.5mV 不适用 ±3µV/°C（典型值），±15µV/°C（最 大值） ±20µV/°C（典型值） 高侧电源电压，VDD1 额定环境温度，TA 输入失调电压，VOS 输入失调电压温漂，TCVOS 增益误差，EG 增益误差漂移，TCEG ±0.3% ±1% ±5ppm/°C（典型值），±45ppm/°C （最大值） ±30ppm/°C（典型值） 75kV/µs（最小值） 15kV/µs（最小值） 共模瞬态抗扰度，CMTI 6 Pin Configuration and Functions DWV Package 8-Pin SOIC Top View VDD1 1 8 VDD2 VIN 2 7 VOUTP SHTDN 3 6 VOUTN GND1 4 5 GND2 Not to scale Pin Functions PIN TYPE DESCRIPTION NO. NAME 1 VDD1 — 2 VIN I Analog input 3 SHTDN I Shutdown input, active high, with internal pullup resistor (typical value: 100 kΩ) 4 GND1 — High-side analog ground 5 GND2 — Low-side analog ground 6 VOUTN O Inverting analog output 7 VOUTP O Noninverting analog output 8 VDD2 — Low-side power supply, 3.0 V to 5.5 V, relative to GND2. See the Power Supply Recommendations section for power-supply decoupling recommendations. High-side power supply, 3.0 V to 5.5 V for the AMC1311B (4.5 V to 5.5 V for the AMC1311), relative to GND1. See the Power Supply Recommendations section for power-supply decoupling recommendations. 版权 © 2017–2018, Texas Instruments Incorporated 3 AMC1311 ZHCSH46A – DECEMBER 2017 – REVISED JUNE 2018 www.ti.com.cn 7 Specifications 7.1 Absolute Maximum Ratings (1) MIN MAX VDD1 to GND1 –0.3 6.5 VDD2 to GND2 –0.3 6.5 GND1 – 6 VDD1 + 0.5 SHTDN GND1 – 0.5 VDD1 + 0.5 Output voltage VOUTP, VOUTN GND2 – 0.5 VDD2 + 0.5 V Input current Continuous, any pin except power-supply pins –10 10 mA Power-supply voltage Input voltage Temperature (1) VIN Junction, TJ Storage, Tstg UNIT V V 150 –65 °C 150 Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 7.2 ESD Ratings VALUE V(ESD) (1) (2) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±2000 Charged-device model (CDM), per JEDEC specification JESD22-C101 (2) ±1000 UNIT V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 7.3 Recommended Operating Conditions over operating ambient temperature range (unless otherwise noted) MIN NOM MAX UNIT VDD1 to GND1, AMC1311 4.5 5 5.5 VDD1 to GND1, AMC1311B 3.0 5 5.5 VDD2 to GND2 3.0 3.3 5.5 V POWER SUPPLY High-side power supply Low-side power supply V ANALOG INPUT Absolute input voltage VIN to GND1 –2 VDD1 V VFSR Specified linear input full-scale voltage VIN to GND1 –0.1 2 V VClipping Input voltage before clipping output VIN to GND1 2.516 V DIGITAL INPUT Input voltage SHTDN GND1 VDD1 AMC1311 –40 125 AMC1311B –55 125 V TEMPERATURE RANGE TA 4 Specified ambient temperature °C Copyright © 2017–2018, Texas Instruments Incorporated AMC1311 www.ti.com.cn ZHCSH46A – DECEMBER 2017 – REVISED JUNE 2018 7.4 Thermal Information AMC1311x THERMAL METRIC (1) DWV (SOIC) UNIT 8 PINS RθJA 84.6 °C/W RθJC(top) Junction-to-case (top) thermal resistance 28.3 °C/W RθJB Junction-to-board thermal resistance 41.1 °C/W ψJT Junction-to-top characterization parameter 4.9 °C/W ψJB Junction-to-board characterization parameter 39.1 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W (1) Junction-to-ambient thermal resistance For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 7.5 Power Ratings PARAMETER PD Maximum power dissipation (both sides) PD1 Maximum power dissipation (high-side supply) PD2 Maximum power dissipation (low-side supply) Copyright © 2017–2018, Texas Instruments Incorporated TEST CONDITIONS VALUE VDD1 = VDD2 = 5.5 V 97.9 VDD1 = VDD2 = 3.6 V, AMC1311B only 56.16 VDD1 = 5.5 V 53.35 VDD1 = 3.6 V, AMC1311B only 30.24 VDD2 = 5.5 V 44.55 VDD2 = 3.6 V 25.92 UNIT mW mW mW 5 AMC1311 ZHCSH46A – DECEMBER 2017 – REVISED JUNE 2018 www.ti.com.cn 7.6 Insulation Specifications over operating ambient temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS VALUE UNIT GENERAL CLR External clearance (1) Shortest pin-to-pin distance through air ≥9 mm CPG External creepage (1) Shortest pin-to-pin distance across the package surface ≥9 mm DTI Distance through insulation Minimum internal gap (internal clearance) of the double insulation (2 × 0.0105 mm) ≥ 0.021 mm CTI Comparative tracking index DIN EN 60112 (VDE 0303-11); IEC 60112 ≥ 600 V Material group According to IEC 60664-1 Overvoltage category per IEC 60664-1 I-IV Rated mains voltage ≤ 600 VRMS I-IV Rated mains voltage ≤ 1000 VRMS I-III DIN V VDE V 0884-11 (VDE V 0884-11): 2017-01 VIORM Maximum repetitive peak isolation voltage VIOWM I Rated mains voltage ≤ 300 VRMS (2) At ac voltage (bipolar) 2121 VPK Maximum-rated isolation working voltage At ac voltage (sine wave) 1500 VRMS At dc voltage 2121 VDC VIOTM Maximum transient isolation voltage VTEST = VIOTM, t = 60 s (qualification test) 7000 VTEST = 1.2 × VIOTM, t = 1 s (100% production test) 8400 VIOSM Maximum surge isolation voltage (3) Test method per IEC 60065, 1.2/50-µs waveform, VTEST = 1.6 × VIOSM = 12800 VPK (qualification) 8000 Apparent charge (4) qpd Barrier capacitance, input to output (5) CIO Insulation resistance, input to output (5) RIO Method a, after input/output safety test subgroup 2 / 3, Vini = VIOTM, tini = 60 s, Vpd(m) = 1.2 × VIORM = 2545 VPK, tm = 10 s ≤5 Method a, after environmental tests subgroup 1, Vini = VIOTM, tini = 60 s, Vpd(m) = 1.6 × VIORM = 3394 VPK, tm = 10 s ≤5 Method b1, at routine test (100% production) and preconditioning (type test), Vini = VIOTM, tini = 1 s, Vpd(m) = 1.875 × VIORM = 3977 VPK, tm = 1 s ≤5 VIO = 0.5 VPP at 1 MHz ~1 VPK VPK pC pF 12 VIO = 500 V at TA = 25°C > 10 VIO = 500 V at 100°C ≤ TA ≤ 125°C > 1011 VIO = 500 V at TS = 150°C > 109 Pollution degree 2 Climatic category 55/125/21 Ω UL1577 VISO (1) (2) (3) (4) (5) 6 Withstand isolation voltage VTEST = VISO = 5000 VRMS or 7000 VDC, t = 60 s (qualification), VTEST = 1.2 × VISO = 6000 VRMS, t = 1 s (100% production test) 5000 VRMS Apply creepage and clearance requirements according to the specific equipment isolation standards of an application. Care must be taken to maintain the creepage and clearance distance of a board design to ensure that the mounting pads of the isolator on the printed circuit board (PCB) do not reduce this distance. Creepage and clearance on a PCB become equal in certain cases. Techniques such as inserting grooves and ribs on the PCB are used to help increase these specifications. This coupler is suitable for safe electrical insulation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. Testing is carried out in air or oil to determine the intrinsic surge immunity of the isolation barrier. Apparent charge is electrical discharge caused by a partial discharge (pd). All pins on each side of the barrier are tied together, creating a two-pin device. Copyright © 2017–2018, Texas Instruments Incorporated AMC1311 www.ti.com.cn ZHCSH46A – DECEMBER 2017 – REVISED JUNE 2018 7.7 Safety-Related Certifications VDE UL Certified according to DIN V VDE V 0884-11 (VDE V 0884-11): 2017-01, DIN EN 60950-1 (VDE 0805 Teil 1): 2014-08, and DIN EN 60065 (VDE 0860): 2005-11 Recognized under 1577 component recognition and CSA component acceptance NO 5 programs Reinforced insulation Single protection Certificate number: 40040142 File number: E181974 7.8 Safety Limiting Values Safety limiting intends to minimize potential damage to the isolation barrier upon failure of input or output (I/O) circuitry. A failure of the I/O may allow low resistance to ground or the supply and, without current limiting, dissipate sufficient power to overheat the die and damage the isolation barrier, potentially leading to secondary system failures. PARAMETER IS Safety input, output, or supply current PS Safety input, output, or total power (1) TS Maximum safety temperature (1) TEST CONDITIONS MIN TYP MAX UNIT RθJA = 84.6°C/W, TJ = 150°C, TA = 25°C, VDD1 = VDD2 = 5.5 V, see 图 2 268 RθJA = 84.6°C/W, TJ = 150°C, TA = 25°C, VDD1 = VDD2 = 3.6 V, AMC1311B only, see 图 2 410 RθJA = 84.6°C/W, TJ = 150°C, TA = 25°C, see 图 3 1477 mW 150 °C mA Input, output, or the sum of input and output power must not exceed this value. The maximum safety temperature is the maximum junction temperature specified for the device. The power dissipation and junction-to-air thermal impedance of the device installed in the application hardware determines the junction temperature. The assumed junction-to-air thermal resistance in the Thermal Information table is that of a device installed on a high-K test board for leaded surface-mount packages. The power is the recommended maximum input voltage times the current. The junction temperature is then the ambient temperature plus the power times the junction-to-air thermal resistance. Copyright © 2017–2018, Texas Instruments Incorporated 7 AMC1311 ZHCSH46A – DECEMBER 2017 – REVISED JUNE 2018 www.ti.com.cn 7.9 Electrical Characteristics minimum and maximum specifications of the AMC1311 apply from TA = –40°C to +125°C, VDD1 = 4.5 V to 5.5 V, VDD2 = 3.0 V to 5.5 V, VIN = –0.1 V to 2 V, and SHTDN = GND1 = 0 V; minimum and maximum specifications of the AMC1311B apply from TA = –55°C to +125°C, VDD1 = 3.0 V to 5.5 V, VDD2 = 3.0 V to 5.5 V, VIN = –0.1 V to 2 V, and SHTDN = GND1 = 0 V; typical specifications are at TA = 25°C, VDD1 = 5 V, and VDD2 = 3.3 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX AMC1311, initial, at TA = 25°C, VIN = GND1 –9.9 ±0.4 9.9 AMC1311B, initial, at TA = 25°C, VIN = GND1, 4.5 V ≤ VDD1 ≤ 5.5 V –1.5 ±0.4 1.5 AMC1311B, initial, at TA = 25°C, VIN = GND1, 3.0 V ≤ VDD1 ≤ 5.5 V (2) –2.5 –1.1 2.5 UNIT ANALOG INPUT Input offset voltage (1) VOS TCVOS Input offset drift (1) CIN Input capacitance (3) RIN Input resistance (3) IIB Input bias current TCIIB Input bias current drift AMC1311 AMC1311B ±20 –15 fIN = 275 kHz VIN = GND1 –15 ±3 15 mV µV/°C 7 pF 1 GΩ 3.5 15 ±10 nA pA/°C ANALOG OUTPUT Nominal gain Gain error (1) EG TCEG Gain error drift (1) 1 AMC1311, initial, at TA = 25°C AMC1311B, initial, at TA = 25°C –1% 0.4% 1% –0.3% ±0.05% 0.3% AMC1311 AMC1311B Nonlinearity (1) ±30 –45 ±5 45 –0.04% ±0.01% 0.04% Nonlinearity drift THD SNR PSRR 1 Total harmonic distortion VIN = 2 V, fIN = 10 kHz, BW = 100 kHz Output noise VIN = GND1, BW = 100 kHz Signal-to-noise ratio Power-supply rejection ratio (4) VCMout Common-mode output voltage VFAILSAFE Failsafe differential output voltage BW Output bandwidth ROUT Output resistance VIN = 2 V, fIN = 1 kHz, BW = 10 kHz 79 CMTI (1) (2) (3) (4) 8 220 μVRMS 82.6 PSRR vs VDD1, at dc –65 PSRR vs VDD1, 100-mV and 10-kHz ripple –65 PSRR vs VDD2, at dc –85 PSRR vs VDD2, 100-mV and 10-kHz ripple –70 dB 1.49 V –2.6 –2.5 V 100 220 AMC1311B 220 275 On VOUTP or VOUTN dB 1.44 AMC1311 < 0.2 Output short-circuit current Common-mode transient immunity dB 70.9 1.39 ppm/°C –87 VIN = 2 V, fIN = 10 kHz, BW = 100 kHz VOUTP – VOUTN, SHTDN = high, or VDD1 ≤ VDD1UV, or VDD1 missing ppm/°C ±13 |GND1 – GND2| = 1 kV, AMC1311 15 30 |GND1 – GND2| = 1 kV, AMC1311B 75 140 kHz Ω mA kV/µs The typical value includes one sigma statistical variation. The typical value is at VDD1 = 3.3 V. See the Analog Input section for more details. This parameter is output referred. Copyright © 2017–2018, Texas Instruments Incorporated AMC1311 www.ti.com.cn ZHCSH46A – DECEMBER 2017 – REVISED JUNE 2018 Electrical Characteristics (continued) minimum and maximum specifications of the AMC1311 apply from TA = –40°C to +125°C, VDD1 = 4.5 V to 5.5 V, VDD2 = 3.0 V to 5.5 V, VIN = –0.1 V to 2 V, and SHTDN = GND1 = 0 V; minimum and maximum specifications of the AMC1311B apply from TA = –55°C to +125°C, VDD1 = 3.0 V to 5.5 V, VDD2 = 3.0 V to 5.5 V, VIN = –0.1 V to 2 V, and SHTDN = GND1 = 0 V; typical specifications are at TA = 25°C, VDD1 = 5 V, and VDD2 = 3.3 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT DIGITAL INPUT (SHTDN Pin: CMOS Logic Family, CMOS With Schmitt-Trigger) GND1 ≤ VSHTDN ≤ VDD1 IIN Input current CIN Input capacitance –70 1 VIH High-level input voltage 0.7 × VDD1 VDD1 + 0.3 V VIL Low-level input voltage –0.3 0.3 × VDD1 V 2.53 2.7 V 6 8.4 4.5 V ≤ VDD1 ≤ 5.5 V, SHTDN = low 7.1 9.7 SHTDN = high 1.3 3.0 V ≤ VDD2 ≤ 3.6 V 5.3 7.2 4.5 V ≤ VDD2 ≤ 5.5 V 5.9 8.1 5 µA pF POWER SUPPLY VDD1UV VDD1 undervoltage detection threshold voltage VDD1 falling AMC1311B only, 3.0 V ≤ VDD1 ≤ 3.6 V, SHTDN = low IDD1 IDD2 High-side supply current Low-side supply current Copyright © 2017–2018, Texas Instruments Incorporated 1.75 mA µA mA 9 AMC1311 ZHCSH46A – DECEMBER 2017 – REVISED JUNE 2018 www.ti.com.cn 7.10 Switching Characteristics over operating ambient temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX tr Rise time of VOUTP, VOUTN See 图 1 1.3 tf Fall time of VOUTP, VOUTN See 图 1 1.3 VIN to VOUTN, VOUTP signal delay (50% – 10%) AMC1311, unfiltered output, see 图 1 1.5 2.5 AMC1311B, unfiltered output, see 图 1 1.0 1.5 VIN to VOUTN, VOUTP signal delay (50% – 50%) AMC1311, unfiltered output, see 图 1 2.1 3.1 AMC1311B, unfiltered output, see 图 1 1.6 2.1 VIN to VOUTN, VOUTP signal delay (50% – 90%) AMC1311, unfiltered output, see 图 1 3.0 4.0 AMC1311B, unfiltered output, see 图 1 2.5 3.0 UNIT µs µs µs µs µs tAS Analog settling time VDD1 step to 3.0 V with VDD2 ≥ 3.0 V, to VOUTP, VOUTN valid, 0.1% settling 50 100 µs tEN Device enable time SHTDN high to low 50 100 µs tSHTDN Shutdown time SHTDN low to high 3 10 µs 2V VIN 50% 0V 50% - 50% 50% - 90% 50% - 10% VOUTP 50% 10% VCMout VOUTN tr tf 图 1. Rise, Fall, and Delay Time Waveforms 10 版权 © 2017–2018, Texas Instruments Incorporated AMC1311 www.ti.com.cn 7.11 ZHCSH46A – DECEMBER 2017 – REVISED JUNE 2018 Insulation Characteristics Curves 1600 500 AVDD = DVDD = 3.6 V, AMC1311B AVDD = DVDD = 5.5 V 1400 400 300 PS (mW) IS (mA) 1200 200 1000 800 600 400 100 200 0 0 0 50 100 TA (°C) 150 200 0 50 D001 图 2. Thermal Derating Curve for Safety-Limiting Current per VDE 1.E+11 1.E+10 87.5% 100 TA (qC) 150 200 D002 图 3. Thermal Derating Curve for Safety-Limiting Power per VDE Safety Margin Zone: 1800 VRMS, 254 Years Operating Zone: 1500 VRMS, 135 Years TDDB Line (