bq24130
www.ti.com
SLUSAN2C – JULY 2011 – REVISED JUNE 2012
600-kHz Synchronous Switch-Mode Host-Controlled
Battery/Supercapacitor Charger With 4-A Integrated MOSFETs
Check for Samples: bq24130
FEATURES
1
•
2
•
•
•
•
•
•
•
•
600kHz Synchronous Switch-mode Charger
with 4 A Integrated N-MOSFETs
Up to 96% Efficiency
30 V Input Rating with 18V Overvoltage
Protection
– 4.5 V to 17 V Input Operating Range
Battery Charge Voltage
– 1, 2,or 3-Cell With 4.2V/Cell
Constant Current Super Capacitor Charging
High Integration
– Integrated 20-V Switching MOSFETs
– Integrated Bootstrap Diode
– Internal Loop Compensation
– Internal Digital Soft Start
Safety
– Thermal Regulation Loop Throttles Back
Current to Limit TJ = 120°C
– Thermal Shutdown
– Battery Thermistor Sense Hot/Cold Charge
Suspend
– Input Overvoltage Protection
– Cycle by Cycle Current Limit
Accuracy
– ±0.5% Charge Voltage Regulation
– ±4% Charge Current Regulation
Less than 15 µA Battery Current with Adapter
Removed
•
Small QFN Package
– 3.5 mm x 4.5 mm QFN-20 pin
APPLICATIONS
•
•
•
•
•
•
•
•
Tablet PC
Netbook and Ultra-Mobile Computers
Portable Data Capture Terminals
Portable Printers
Medical Diagnostics Equipment
Battery Bay Chargers
Back-Up Systems
Li-Ion/Li-Polymer Battery and Super Capacitor
Applications
SW
SW
PVCC
PVCC
PGND
bq24130
PGND
AVCC
BTST
STAT
REGN
TS
ISET2
CMOD
SRP
VREF
SRN
AGND
BAT
ISET1
CELL
DESCRIPTION
The bq24130 is an integrated host-controlled Li-ion and Li-polymer switch-mode battery charge controllers with
two integrated N-channel power MOSFETs. It offers a constant-frequency synchronous PWM controller with high
accuracy regulation of charge current and voltage. The fast charge and precharge current can be either
hardwired with resistors or programmed by system power management microcontroller using a DAC or GPIOs.
Battery remote sensing provides accurate charge voltage regulation.
The bq24130 monitors the battery pack temperature to allow charger only in a preset temperature window. The
thermal regulation loop reduces the charge current to maintain the junction temperature of 120ºC during
operation.
The bq24130 automatically enters a low-quiescent current sleep mode when the input voltage falls below the
battery voltage. The bq24130 charges one, two or three cell (selected by CELL pin), supporting up to 4 A charge
current. The bq24130 is available in a 20-pin, 3.5 x 4.5 mm2 thin QFN package.
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PowerPAD is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2011–2012, Texas Instruments Incorporated
bq24130
SLUSAN2C – JULY 2011 – REVISED JUNE 2012
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
PIN FUNCTIONS
PIN
NAME
TYPE
FUNCTION DESCRIPTION
1, 20
SW
P
Switching node, charge current output inductor connection. Connect the 0.47-µF bootstrap capacitor from
SW to BTST.
2, 3
PVCC
P
Charger input voltage. Connect at least 10-µF ceramic capacitor from PVCC to PGND and place it as
close as possible to IC.
4
AVCC
P
IC power positive supply. Place a 1-µF ceramic capacitor from AVCC to AGND and place it as close as
possible to IC. Place a 10 ohm resistor from input side to AVCC pin to filter the noise. For 5 V input, a 5-Ω
resistor is recommended.
5
STAT
O
Open-drain charge status pin with 10-kΩ pull up to power rail. The STAT pin can be used to drive LED or
communicate with the host processor. It indicates various charger operations: LOW when charge in
process, HIGH when charge complete or SLEEP mode. Blinking when fault occurs, such as charge
suspend, and input overvoltage.
6
TS
I
Temperature qualification voltage input. Connect a negative temperature coefficient thermistor. Program
the hot and cold temperature window with a resistor divider from VREF to TS to AGND. The temperature
qualification window can be set to 5-40ºC or wider. The 103AT thermister is recommended.
7
CMOD
I
Charge mode selection: low (pull down to AGND) for pre-charge current as set by ISET2 pin and high (pull
up to VREF) for fast charge current as set by ISET1 pin. If the battery voltage reaches the voltage
regulation set point, IC changes to voltage regulation mode regardless of CMOD pin input.
8
VREF
P
3.3 V reference voltage output. Place a 1-µF ceramic capacitor from VREF to AGND pin close to the IC.
This voltage could be used for programming charge current regulation on ISET1 and ISET2 pins,
programming the threshold of TS pin, and the pull-up rail of STAT pin and CELL pin.
9
AGND
P
Analog ground. Ground connection for low-current sensitive analog and digital signals. On PCB layout,
connect to the analog ground plane, and only connect to PGND through the PowerPad underneath the IC.
Fast charge current set point. Use a voltage divider from VREF to AGND to set this value.
10
ISET1
I
I(CHG) =
V ISET1
(
)
20 ´ R(SR)
The charger is disabled when ISET1 pin voltage is below 50mV and is enabled when ISET1 pin voltage is
above 100mV.
11
CELL
I
Cell selection pin. Set CELL pin LO for 1-cell, Float for 2-cell, and HI for 3-cell with a fixed 4.2 V per cell.
12
BAT
I
Battery voltage remote sense. Directly connect a kelvin sense trace from the battery pack positive terminal
to the BAT pin to accurately sense the battery pack voltage. Place a 0.1-µF capacitor from BAT to AGND
close to the IC to filter high frequency noise.
13
SRN
I
Charge current sense resistor, negative input. A 0.1-µF ceramic capacitor is placed from SRN to SRP to
provide differential-mode filtering. A 0.1-µF ceramic capacitor is placed from SRN pin to AGND for
common-mode filtering.
14
SRP
P/I
Charge current sense resistor, positive input. A 0.1-µF ceramic capacitor is placed from SRN to SRP to
provide differential-mode filtering. A 0.1-µF ceramic capacitor is placed from SRP pin to AGND for
common-mode filtering.
Pre-charge current set point. Use a voltage divider from VREF to AGND to set this value.
15
ISET2
I
I(PRECHG) =
V IS ET2
(
)
100 ´ R(SR)
16
REGN
P
PWM low side driver positive 6V supply output. Connect a 1-µF ceramic capacitor from REGN to PGND
pin, close to the IC. Use for low side driver and high-side driver bootstrap voltage by integrated diode from
REGN to BTST.
17
BTST
P
PWM high side driver positive supply. Connect the 47 nF bootstrap capacitor from SW to BTST.
18, 19
PGND
PowerPAD™
Pad
Power ground. Ground connection for high-current power converter node. On PCB layout, connect directly
to source of low-side power MOSFET, to ground connection of in put and output capacitors of the charger.
Only connect to AGND through the PowerPAD underneath the IC.
Pad
Exposed pad beneath the IC. Always solder PowerPAD to the board, and have vias on the PowerPAD
plane star-connecting to AGND and ground plane for high-current power converter. It also serves as a
thermal pad to dissipate the heat.
ORDERING INFORMATION (1)
(1)
2
PART NUMBER
MARKING
PACKAGE
bq24130
bq24130
20-pin 3.5 x 4.5mm2 QFN
ORDERING NUMBER
QUANTITY
bq24130RHLR
3000
bq24130RHLT
250
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
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Copyright © 2011–2012, Texas Instruments Incorporated
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bq24130
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SLUSAN2C – JULY 2011 – REVISED JUNE 2012
ABSOLUTE MAXIMUM RATINGS (1)
(2)
over operating free-air temperature range (unless otherwise noted)
VALUE
Voltage
(with respect to AGND and
PGND)
UNIT
MIN
MAX
PVCC
–0.3
20
V
AVCC, STAT
–0.3
30
V
SRP, SRN, BAT
–0.3
20
V
–2
20
V
REGN, TS, CELL, CMOD
–0.3
7
V
BTST
–0.3
26
V
VREF, ISET1, ISET2
–0.3
3.6
V
SRP–SRN
–0.5
0.5
V
Junction temperature, TJ
–40
155
°C
Storage temperature, Tstg
–55
155
°C
Maximum difference voltage
(1)
(2)
SW
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage
values are with respect to the network ground terminal unless otherwise noted.
All voltages are with respect to GND if not specified. Currents are positive into, negative out of the specified terminal, if not specified.
Consult Packaging Section of the data sheet for thermal limitations and considerations of packages.
THERMAL INFORMATION
THERMAL METRIC (1) (2)
bq24130
θJA
Junction-to-ambient thermal resistance
35
θJCtop
Junction-to-case (top) thermal resistance
N/A
θJB
Junction-to-board thermal resistance
N/A
ψJT
Junction-to-top characterization parameter
0.4
ψJB
Junction-to-board characterization parameter
9.1
θJCbot
Junction-to-case (bottom) thermal resistance
2.1
(1)
(2)
UNITS
RHL (20 PIN)
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
For thermal estimates of this device based on PCB copper area, see the TI PCB Thermal Calculator.
RECOMMENDED OPERATING CONDITIONS
Input voltage
VIN
Output voltage
BAT
Output current
IOUT
Maximum difference voltage
SRP-SRN
Operating junction temperature range
TJ
MIN
MAX
4.5
17
UNIT
V
13.5
V
0.6
4
–200
200
mV
A
–40
125
°C
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SLUSAN2C – JULY 2011 – REVISED JUNE 2012
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ELECTRICAL CHARACTERISTICS
4.5 V ≤ V(PVCC, AVCC) ≤ 17 V, -40°C < TJ < 125°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OPERATING CONDITIONS
V(AVCC)
AVCC Input Voltage Operating Range
4.5
17
V
QUIESCENT CURRENTS
Battery Discharge Current
(sum of currents into AVCC, BTST, SW,
SRP, SRN, BAT)
I(BAT)
Adapter Supply Current (sum of currents
into AVCC)
I(AC)
V(AVCC) < V(UVLO), 0°C - 85°C
15
V(AVCC) > V(UVLO)
V(SRN) > V(AVCC) (SLEEP)
15
V(AVCC) > V(UVLO), V(AVCC) > V(SRN)
ISET1 < 40 mV (Charge disabled)
25
V(AVCC) > V(UVLO), V(AVCC) > V(SRN)
ISET1 > 120 mV (Charge enabled), Charge done
25
V(AVCC) > V(UVLO), V(AVCC) > V(BAT)
ISET1 < 40 mV (Charge disabled)
1
1.5
V(AVCC) > V(UVLO), V(AVCC) > V(BAT)
ISET1 > 120 mV (Charge enabled), no switching
2
5
V(AVCC) > V(UVLO), V(AVCC) > V(BAT)
ISET1 > 120 mV (Charge enabled), switching
15
bq24130, CELL to AGND
4.2
µA
mA
CHARGE VOLTAGE REGULATION
V(BAT_REG)
BAT Regulation Voltage
Charge Voltage Regulation Accuracy
bq24130, CELL floating
8.4
bq24130, CELL to VREF
12.6
TJ = 0 to 85°C
–0.5%
TJ = -40 to 125°C
–0.7%
BAT pin resistance (1)
R(BAT)
614
V
0.5%
0.7%
717
820
kΩ
0.8
V
CURRENT REGULATION (FAST CHARGE)
V(ISET1)
ISET1 Voltage Range
K(ISET1)
Charge Current Set Factor (Amps of Charge
RSENSE = 10 mΩ
Current per Volt on ISET1 pin)
0.12
Charge Current Regulation Accuracy (With
Schottky Diode on SW)
lLkg
A/V
V(IREG_CHG) = 40 mV
–4%
V(IREG_CHG) = 20 mV
-7%
7%
–25%
25%
V(IREG) = 5 mV
V(ISET1_CE)
5
ISET1 Rising Threshold to Enable Charge
ISET1 rising
ISET1 Falling to Disable Charge
ISET1 falling
Leakage Current into ISET1 pin
V(ISET1) = 2 V
4%
100
40
120
50
mV
mV
100
nA
0
2
V
0.125
2
A
CURRENT REGULATION – PRECHARGE
V(ISET2)
ISET2 Voltage Range
I(IREG_PRECHG)
Precharge current range
RSENSE = 10 mΩ
K(ISET2)
Precharge Current Set Factor (Amps of
precharge Current per Volt on ISET2 pin)
RSENSE = 10 mΩ
Precharge Current Regulation Accuracy
lLkg
Leakage Current into ISET2 pin
1
A/V
V(IREG_CHG) = 10 mV, V(SRP) = 4 V
–10%
10%
V(IREG_CHG) = 10 mV, V(SRP) = 2.6 V
–15%
15%
V(IREG_CHG) = 4 mV
–25%
25%
V(IREG_CHG) = 2 mV
-40%
V(ISET2) = 2V
40%
100
nA
INPUT UNDERVOLTAGE LOCK-OUT COMPARATOR (UVLO)
UVLO
AC Undervoltage Rising Threshold
Measure on AVCC
3.4
AC Undervoltage Hysteresis, falling
3.6
3.8
340
V
mV
SLEEP COMPARATOR (REVERSE DISCHARGING PROTECTION)
SLEEP Falling Threshold
V(SLEEP)
(1)
4
V(AVCC) – V(SRN) to enter SLEEP
SLEEP Hysteresis
50
90
150
mV
200
mV
SLEEP Rising Shutdown Deglitch
AVCC falling below SRN
100
ms
SLEEP Falling Power-up Deglitch
AVCC rising above SRN
30
ms
Specified by Design
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SLUSAN2C – JULY 2011 – REVISED JUNE 2012
ELECTRICAL CHARACTERISTICS (continued)
4.5 V ≤ V(PVCC, AVCC) ≤ 17 V, -40°C < TJ < 125°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
BAT OVERVOLTAGE COMPARATOR
V(OV_RISE)
Overvoltage Rising Threshold
As percentage of VBAT
104%
V(OV_FALL)
Overvoltage Falling Threshold
As percentage of VBAT
102%
tOV
Overvoltage Deglitch Time to Disable
Charge
30
ms
INPUT OVERVOLTAGE COMPARATOR (ACOV)
V(ACOV)
AC Overvoltage Rising Threshold
Measure on AVCC
AC Overvoltage Falling Hysteresis
Measured on AVCC
17
18
19
V
540
mV
AC Overvoltage Rising Deglitch
1
ms
AC Overvoltage Falling Deglitch
1
ms
ISET1 > 120 mV, Charging
120
°C
Temperature Increasing
150
°C
20
°C
THERMAL REGULATION
TJ
Junction Temperature Regulation Accuracy
THERMAL SHUTDOWN COMPARATOR
T(SHUT)
Thermal Shutdown Rising Temperature
Thermal Shutdown Hysteresis
Thermal Shutdown Rising Deglitch
Temperature Increasing Delay
100
µs
Thermal Shutdown Falling Deglitch
Temperature Decreasing Delay
10
ms
THERMISTOR COMPARATOR
V(LTF)
Cold Temperature Threshold, TS pin
Voltage Rising Threshold
Charger suspends charge as Percentage to VREF
73%
73.5%
74%
V(LTF_HYS)
Cold Temperature Hysteresis, TS pin
Voltage Falling
As Percentage to VREF
0.2%
0.4%
0.6%
V(HTF)
Hot Temperature TS pin voltage falling
Threshold
As Percentage to VREF
46.6%
47.2%
47.8%
V(TCO)
Cut-off Temperature TS pin voltage falling
Threshold
As Percentage to VREF
44.2%
44.7%
45.2%
Deglitch time for Temperature Out of Range
Detection
V(TS) > V(LTF), or V(TS) < V(TCO), or V(TS) < V(HTF)
Deglitch time for Temperature in Valid
Range Detection
V(TS) < V(LTF) – V(LTF_HYS) or V(TS) > V(TCO), or V(TS) >
V(HTF)
400
ms
20
ms
CHARGE OVERCURRENT COMPARATOR (CYCLE-BY-CYCLE)
V(OC)
I(OCP)
Charge Overvurrent Rising Threshold,
V(SRP) > 2.2V
Current as percentage of V(IREG_CHG)
160%
Charge Overvurrent Rising Threshold,
V(SRP) < 2.2V
45
mV
Charge Overvurrent Limit Range,
V(SRP) > 2.2V
75
mV
Charge OCP using high side sense FET
8
11.5
1
5
A
CHARGE UNDERCURRENT COMPARATOR (CYCLE-BY-CYCLE)
V(UCP)
Charge Undercurrent Falling Threshold
Switch from Sync mode to Non-Sync mode, measure
on V(SRP-SRN)
9
mV
BAT SHORT COMPARATOR (BATSHORT)
Battery Short Falling Threshold
V(BATSHT)
Measure on BAT
2
Battery Short Rising Hysteresis
Deglitch on Both Edge
V
200
mV
1
µs
1.25
mV
1.25
mV
1
µs
LOW CHARGE CURRENT COMPARATOR
Low Charge Current Falling Threshold
V(LC)
Measure on V(SRP-SRN)
Low Charge Current Rising Hysteresis
Deglitch on Both Edge
VREF REGULATOR
V(VREF_REG)
VREF Regulator Voltage
V(AVCC) > UVLO
I(VREF_LIM)
VREF Current Limit
V(VREF) = 0V, V(AVCC) > UVLO
3.267
35
3.3
3.333
120
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V
mA
5
bq24130
SLUSAN2C – JULY 2011 – REVISED JUNE 2012
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ELECTRICAL CHARACTERISTICS (continued)
4.5 V ≤ V(PVCC, AVCC) ≤ 17 V, -40°C < TJ < 125°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
6
MAX
UNIT
REGN REGULATOR
V(REGN_REG)
REGN Regulator Voltage
V(AVCC) > 10 V, 0mA - 40 mA, ISET1 > 100 mV
5.7
I(REGN_LIM)
REGN Current Limit
V(REGN) = 0 V, V(AVCC) > UVLO
40
6.3
V
120
mA
700
kHz
INTERNAL PWM
PWM Switching Frequency
500
600
Driver Dead Time
Dead time when switching between LSD and HSD,
no load
30
R(DS_HI)
High Side MOSFET On Resistance
V(BTST) – V(SW) = 5.5 V
25
45
mΩ
R(DS_LO)
Low Side MOSFET On Resistance
60
110
mΩ
Bootstrap Refresh Comparator Threshold
Voltage
V(BTST)
ns
V(BTST) – V(SW) when low side refresh pulse is
requested, V(VCC) = 4.5 V
3
V
V(BTST) – V(SW) when low side refresh pulse is
requested, V(VCC) > 6 V
4
V
INTERNAL SOFT START (8 steps to regulation current I(CHG))
Soft Start Steps
8
Soft Start Step Time
step
1.6
3
ms
2
5
ms
CHARGER SECTION POWER-UP SEQUENCING
Charge-Enable Delay after Power-up
(2)
Delay from ISET1 above 120 mV to start charging the
battery
INTEGRATED BTST DIODE
VF
Forward Bias Voltage
IF = 120 mA at 25°C
VR
Reverse breakdown voltage
IR = 2 µA at 25°C
0.85
20
V
V
LOGIC IO PIN CHARACTERISTICS
V(OUT_LO)
STAT Output Low Saturation Voltage
Sink Current = 5 mA
0.5
V
V(CELL_LO)
CELL pin input low threshold, 1 cell
CELL pin voltage falling edge
0.5
V
V(CELL_MID)
CELL pin input mid threshold, 2 cells
CELL pin voltage rising for MIN, falling for MAX
0.8
1.8
V
V(CELL_HI)
CELL pin input high threshold, 3 cells
CELL pin voltage rising edge
2.5
R(CELL_GND)
Resistance between CELL to ground to
keep CELL LOW [1]
VIL
CMOD Low-level input voltage threshold
IIL = 5 µA
VIH
CMOD High-level input voltage threshold
IIL = 20 µA
(2)
6
2.1
V
120
kΩ
0.8
V
V
Specified by Design
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SLUSAN2C – JULY 2011 – REVISED JUNE 2012
BLOCK DIAGRAM
bq24130
ACOV
V ACOV
V UVLO
UVLO
AVCC
VSRN+VSLEEP_FALL
VREF
VREF
LDO
SLEEP
EN_VREF
V BAT_SHT
BAT_SHT
AGND
BAT_OVP
REGN
LDO
EN_CHRG
VOV_RISE
BAT
FBO
REGN
EAI
BTST
CELL
PVCC
2.1V
PVCC
EAO
LEVEL
SHIFTER
1V
SW
SW
PWM
IC T J
REGN
TJ_REG
20μA
V (SRP-SRN)
EN_CHRG
SYNC
V UCP
120mV
PWM
CONTROL
LOGIC
PGND
OCP
REFRESH
VOC
VSW +VBTST_REFRESH
ISET1
ISET2
ISET1
ISET2
Selection
VBTST
IBAT_REG
STAT
/STAT
V LC
20μA
PGND
V(SRP-SRN)
LC
CHARGE
V(SRP-SRN)
CMOD
VREF
CMOD
SRP
LTF
V (SRP-SRN)
20X
IC T J
SRN
EN_CHRG
TSHUT
TSHUT
STATE
MACHINE
LOGIC
SUSPEND
TS
HTF
ACOV
UVLO
TCO
SLEEP
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TYPICAL APPLICATION
ADAPTER
SYSTEM
Q3
C4
10µ
Q4
PVCC
R1
10
AVCC
C1
1µ
AGND
Q6
Q1
C2: 1µ
ISET1 V(SRN))
• The AVCC voltage is lower than the AC over-voltage threshold (i.e. V(AVCC) < V(ACOV))
• 50 ms delay is complete after initial power-up
• The REGN and VREF LDO voltages are at the correct levels
• Thermal Shut down (TSHUT) is not valid
• No TS fault is detected
One of the following conditions will stop on-going charging:
• ISET1 pin voltage is below 40mV;
• The device is in UVLO mode;
• Adapter is removed, causing the device to enter SLEEP mode;
• AVCC voltage is over voltage
• The REGN or VREF LDO voltage is overloaded;
• TSHUT temperature threshold is reached.
• TS voltage goes out of range indicating the battery temperature is too hot or too cold
Automatic Internal Soft-Start Charger Current
The charger automatically soft-starts the charger regulation current every time the charger goes into fast-charge
to ensure there is no overshoot or stress on the output capacitors or the power converter. The soft-start consists
of stepping-up the charge regulation current into 8 evenly divided steps up to the programmed charge current.
Each step lasts around 1.6 ms, for a typical rise time of 12.8 ms. No external components are needed for this
function.
Converter Operation
The bq24130 employs a 600kHz constant-frequency step-down switching regulator. The fixed frequency
oscillator keeps tight control of the switching frequency under all conditions of input voltage, battery voltage,
charge current and temperature, simplifying output filter design and keeping it out of the audible noise region.
A type III compensation network allows using ceramic capacitors at the output of the converter. An internal sawtooth ramp is compared to the internal error control signals to vary the duty-cycle of the converter. The ramp
height is proportional to the AVCC voltage to cancel out any loop gain variation due to a change in input voltage,
and simplifies loop compensation. Internal gate drive logic allows achieving 97% duty cycle before pulse skipping
starts.
Charge Undercurrent Protection
When the voltage between BTST and SW falls below 4 V, the low-side FET turns on to provide refresh charge
up the bootstrap capacitor. After the recharge, if the SRP-SRN voltage decreases below 5 mV, the low side FET
will be turned off for the remainder of the switching cycle (i.e. non-synchronous operation). This is important to
prevent negative inductor current from causing any boost effect in which the input voltage increases as power is
transferred from the battery to the input capacitors. This can lead to an overvoltage on the AVCC node and
potentially cause damage to the system.
When the IC senses SRP-SRN average voltage drops below 1.25 mV (0.125 A of inductor current for a 10 mΩ
sense resistor) or the battery voltage is less than 2 V, the charger will enter non-synchronous mode and the lowside n-channel power MOSFET will stay off and rely on the body diode to make converter as a standard buck.
This prevents the battery discharge current when battery is almost fully charged and current tapers down to a
lower level. The low-side n-channel power MOSFET will turn on when a bootstrap capacitor refresh pulse is
needed.
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Charge Overcurrent Protection
The charger monitors top side MOSFET current by high side sense FET. When peak current is higher than overcurrent threshold, it will turn off the top side MOSFET and keep it off until the next cycle. The charger has a
secondary cycle-to-cycle over-current protection. It monitors the charge current, and prevents the current from
exceeding 160% of the programmed charge current. The high-side gate drive turns off when the overcurrent is
detected, and automatically resumes when the current falls below the over-current threshold.
Battery Overvoltage Protection
The converter will not allow the high-side FET to turn-on until the battery voltage goes below 102% of the
regulation voltage. This allows one-cycle response to an over-voltage condition – such as occurs when the load
is removed or the battery is disconnected. An 8 mA current sink from SRP/SRN to AGND is on only during
charge and allows discharging the stored output inductor energy that is transferred to the output capacitors. If
battery overvoltage condition lasts for more than 30 ms, charge is disabled.
Battery Short Protection
When SRN pin voltage is lower than 2 V it is considered as battery short condition during charging period. The
charger will shut down immediately, then soft start back to the charging current 1.25 A max. This prevents high
current may build in output inductor and cause inductor saturation when battery terminal is shorted during
charging. The converter works in non-synchronous mode during battery short.
Input Overvoltage Protection (ACOV)
ACOV provides protection to prevent system damage due to high input voltage. In bq24130, once the voltage on
AVCC reaches the 18 V ACOV threshold, charge is disabled.
Input Under Voltage Lock Out (UVLO)
The system must have a minimum 3.85 V AVCC voltage to allow proper operation. This AVCC voltage could
come from either input adapter or battery, since a conduction path exists from the battery to AVCC through the
high side NMOS body diode. When AVCC is below the 3.85 V UVLO threshold, all circuits on the IC are
disabled.
Thermal Regulation and Shutdown Protection
The QFN package has low thermal impedance, which provides good thermal conduction from the silicon to the
ambient, to keep junctions temperatures low. The internal thermal regulation loop will adjust the charge current to
maintain the junction temperature around 120°C.
As added level of protection, the charger converter turns off and self-protects whenever the junction temperature
exceeds the TSHUT threshold of 150°C. The charger stays off until the junction temperature falls below 130°C.
Temperature Qualification
The controller continuously monitors battery temperature by measuring the voltage between the TS pin and
AGND. A negative temperature coefficient thermistor (NTC) and an external voltage divider typically develop this
voltage. The controller compares this voltage against its internal thresholds to determine if charging is allowed.
To initiate a charge cycle, the battery temperature must be within the V(LTF) to V(HTF) thresholds. If battery
temperature is outside of this range, the controller suspends charge and waits until the battery temperature is
within the V(LTF) to V(HTF) range. During the charge cycle the battery temperature must be within the V(LTF) to
V(TCO) thresholds. If battery temperature is outside of this range, the controller suspends charge and waits until
the battery temperature is within the V(LTF) to V(HTF) range. The controller suspends charge by turning off the
PWM charge MOSFETs. Figure 16 summarizes the operation.
16
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TEMPERATURE RANGE
TO INITIATE CHARGE
TEMPERATURE RANGE
DURING A CHARGE CYCLE
VREF
V(LTF)
VREF
CHARGE SUSPENDED
CHARGE SUSPENDED
V(LTFH)
V(LTF)
V(LTFH)
CHARGE at full C
CHARGE at full C
V(HTF)
V(TCO)
CHARGE SUSPENDED
CHARGE SUSPENDED
AGND
AGND
Figure 16. TS pin, Thermistor Sense Thresholds
Assuming a 103AT NTC thermistor on the battery pack as shown in Figure 1, the value RT1 and RT2 can be
determined by using Equation 4 and Equation 4:
æ 1
1 ÷÷ö
V( VREF) ´RTH(COLD) ´RTH(HOT ) ´ççç
÷
çè V(LTF) V(TCO) ÷ø
RT2 =
æV
æV
ö÷
÷ö
RTH(HOT ) ´ççç ( VREF) - 1÷÷ - RTH(COLD) ´ççç ( VREF) - 1÷÷
÷ø
çè V(LTF)
èç V(TCO)
ø÷
(3)
SPACER
V( VREF)
RT1 =
V(LTF)
-1
1
1
+
RT2 RTH(COLD)
(4)
Select 0°C to 45°C range for Li-ion or Li-polymer battery.
• RTH(COLD) = 27.28 KΩ
• RTH(HOT) = 4.911 KΩ
• RT1 = 5.253 kΩ, Select Resistor 5.23k
• RT2 = 31.318 kΩ, Select Resistor 30.9k
After select closest standard resistor value, by calculating the thermistor resistance at temperature threshold, the
final temperature range can be determined from thermistor data sheet temperature-resistance.
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VREF
RT1
bq24130
TS
RT2
RTH
103AT
Figure 17. TS Resistor Network
Inductor, Capacitor, and Sense Resistor Selection Guidelines
The IC provides internal loop compensation. With this scheme, best stability occurs when the LC resonant
frequency, fo, is approximately 12 kHz – 17 kHz for IC per Equation 5:
fo =
1
2p LC
(5)
Charge Status Outputs
The open-drain STAT outputs indicate various charger operations as shown in . These status pins can be used
to drive LED or communicate with the host processor. Note that OFF indicates that the open-drain transistor is
turned off.
Table 2. STAT Pin Defination
Charge State
Charge in progress
On
Sleep mode, Charge Disabled
OFF
Chagre suspended. Input overvoltage, Battery overvoltage
18
STAT
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APPLICATION INFORMATION
Inductor Selection
The bq24130 has 600 kHz switching frequency to allow the use of small inductor and capacitor values. The
Inductor saturation current should be higher than the charging current (I(CHG)) plus half the ripple current
(I(RIPPLE)):
I(SAT) ≥ I(CHG) + (1/2) I(RIPPLE)
(6)
The inductor ripple current depends on input voltage (VIN), duty cycle (D = VOUT/VIN), switching frequency (fs)
and inductance (L):
I(RIPPLE) =
VIN ´D ´ (1- D)
f s ´L
(7)
Input Capacitor
Input capacitor should have enough ripple current rating to absorb input switching ripple current. The worst case
RMS ripple current is half of the charging current when duty cycle is 0.5. If the converter does not operate at
50% duty cycle, then the worst case capacitor RMS current I(CIN) occurs where the duty cycle is closest to 50%
and can be estimated by Equation 8:
I(CIN) = I(CHG) ´ D ´ (1- D)
(8)
Low ESR ceramic capacitor such as X7R or X5R is preferred for input decoupling capacitor and should be
placed to the drain of the high side MOSFET and source of the low side MOSFET as close as possible. Voltage
rating of the capacitor must be higher than normal input voltage level. 25 V rating or higher capacitor is preferred
for 15 V input voltage. 20 μF capacitance is suggested for typical of 3 A - 4 A charging current.
Output Capacitor
Output capacitor also should have enough ripple current rating to absorb output switching ripple current. The
output capacitor RMS current I(COUT) is given:
I(COUT ) =
I(RIPPLE)
2´ 3
» 0.29 ´I(RIPPLE)
(9)
The output capacitor voltage ripple can be calculated as follows:
DVO =
VOUT æç VOUT ö÷
÷
ç18LCf s2 çè
VIN ø÷÷
(10)
At certain input/output voltage and switching frequency, the voltage ripple can be reduced by increasing the
output filter LC.
The bq24130 has internal loop compensator. To get good loop stability, the resonant frequency of the output
inductor and output capacitor should be designed between 12 kHz and 17 kHz. The preferred ceramic capacitor
is 25 V or higher rating, X7R or X5R
Input Filter Design
During adapter hot plug-in, the parasitic inductance and input capacitor from the adapter cable form a second
order system. The voltage spike at AVCC/PVCC pin may be beyond IC maximum voltage rating and damage IC.
The input filter must be carefully designed and tested to prevent overvoltage event on AVCC/PVCC pin.
There are several methods to damping or limit the overvoltage spike during adapter hot plug-in. An electrolytic
capacitor with high ESR as an input capacitor can damp the overvoltage spike well below the IC maximum pin
voltage rating. A high current capability TVS Zener diode can also limit the over voltage level to an IC safe level.
However, these two solutions may not have low cost or small size.
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A cost effective and small size solution is shown in Figure 18. The R1 and C1 are composed of a damping RC
network to damp the hot plug-in oscillation. As a result the overvoltage spike is limited to a safe level. D1 is used
for reverse voltage protection for AVCC pin. C2 is AVCC pin decoupling capacitor and it should be place to
AVCC pin as close as possible. The R2 and C2 form a damping RC network to further protect the IC from high
dv/dt and high voltage spike. C2 value should be less than C1 value so R1 can dominant the equivalent ESR
value to get enough damping effect for hot plug-in. R1 and R2 package must be sized enough to handle inrush
current power loss according to resistor manufacturer’s data sheet. The filter components value always need to
be verified with real application and minor adjustments may need to fit in the real application circuit.
If the input is 5 V (USB host or USB adapter), the D1 can be saved. R2 has to be 5 Ω or higher to limit the
current if the input is reversely inserted.
D1
Adapter
Connector
R1 (2010)
2W
R2 (1206)
4.7 - 30W
C1
2.2mF
C2
0.1 - 1mF
VCC pin
Figure 18. Input Filter
PCB LAYOUT
The switching node rise and fall times should be minimized for minimum switching loss. Proper layout of the
components to minimize high frequency current path loop (see Figure 19) is important to prevent electrical and
magnetic field radiation and high frequency resonant problems. Here is a PCB layout priority list for proper
layout. Layout PCB according to this specific order is essential
1. Place input capacitor as close as possible to PVCC supply and ground connections and use shortest copper
trace connection. These parts should be placed on the same layer of PCB instead of on different layers and
using vias to make this connection.
2. Place inductor input terminal to SW pin as close as possible. Minimize the copper area of this trace to lower
electrical and magnetic field radiation but make the trace wide enough to carry the charging current. Do not
use multiple layers in parallel for this connection. Minimize parasitic capacitance from this area to any other
trace or plane.
3. The charging current sensing resistor should be placed right next to the inductor output. Route the sense
leads connected across the sensing resistor back to the IC in same layer, close to each other (minimize loop
area) and do not route the sense leads through a high-current path (see Figure 20 for Kelvin connection for
best current accuracy). Place decoupling capacitor on these traces next to the IC.
4. Place output capacitor next to the sensing resistor output and ground.
5. Output capacitor ground connections need to be tied to the same copper that connects to the input capacitor
ground before connecting to system ground.
6. Route analog ground separately from power ground and use single ground connection to tie charger power
ground to charger analog ground. Just beneath the IC use analog ground copper pour but avoid power pins
to reduce inductive and capacitive noise coupling. Use thermal pad as the single ground connection point to
connect analog ground and power ground together. Or using a 0 Ω resistor to tie analog ground to power
ground (thermal pad should tie to analog ground). A star-connection under thermal pad is highly
recommended.
7. It is critical that the exposed thermal pad on the backside of the IC package be soldered to the PCB ground.
Ensure that there are sufficient thermal vias directly under the IC, connecting to the ground plane on the
other layers.
8. Decoupling capacitors should be placed next to the IC pins and make trace connection as short as possible.
20
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9. All via size and number should be enough for a given current path.
Figure 19. High Frequency Current Path
Current Direction
R(SNS)
Current Sensing Direction
To SRP/SRN pins
Figure 20. Sensing Resistor PCB Layout
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REVISION HISTORY
Changes from Original (July 2011) to Revision A
Page
•
Added the Li-Ion/Li-Polymer battery Application ................................................................................................................... 1
•
Changed pin BTST Description From: Connect the 0.1 µF bootstrap capacitor. To: Connect the 47 nF bootstrap
capacitor ............................................................................................................................................................................... 2
•
Changed the Min and Max values for Voltage in the ABS Max Ratings Table .................................................................... 3
•
Changed the RECOMMENDED OPERATING CONDITIONS table .................................................................................... 3
•
Changed the ELECT CHARACTERISTICS conditions statement From: 4.5 V ≤ V(PVCC, AVCC) ≤ 18 V To: 4.5 V ≤
V(PVCC, AVCC) ≤ 17 V ............................................................................................................................................................... 4
•
Changed the Electrical Characteristics table ........................................................................................................................ 4
•
Added Figure 2 ..................................................................................................................................................................... 9
•
Added the TYPICAL CHARACTERISTICS section ............................................................................................................ 10
•
Changed the Battery Voltage Regulation section ............................................................................................................... 14
•
Changed the Charge Overcurrent Protection section ......................................................................................................... 16
Changes from Revision A (August 2011) to Revision B
Page
•
Added Features Bullet: Constant Current Super Capacitor Charging .................................................................................. 1
•
Changed the Thermal Information Table .............................................................................................................................. 3
•
Changed Figure 1 ................................................................................................................................................................. 8
•
Changed Figure 2 ................................................................................................................................................................. 9
•
Changed Figure 14 ............................................................................................................................................................. 12
Changes from Revision B (August 2011) to Revision C
Page
•
Changed the value of RT1 From: RT1 = 31.23 KΩ To: RT1 = 5.253 kΩ, Select Resistor 5.23k ....................................... 17
•
Changed the value of RT2 From: RT2 = 5.25 KΩ To: RT2 = 31.318 kΩ, Select Resistor 30.9k ....................................... 17
22
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
BQ24130RHLR
ACTIVE
VQFN
RHL
20
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 85
BQ24130
BQ24130RHLT
ACTIVE
VQFN
RHL
20
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 85
BQ24130
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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