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CC1125RHBR

CC1125RHBR

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    VQFN32_EP

  • 描述:

    IC RF TxRx + MCU General ISM

  • 数据手册
  • 价格&库存
CC1125RHBR 数据手册
Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CC1125 SWRS120E – JUNE 2011 – REVISED OCTOBER 2014 CC1125 Ultra-High Performance RF Narrowband Transceiver 1 Device Overview 1.1 Features 1 • High-Performance, Single-Chip Transceiver – Adjacent Channel Selectivity: 67 dB at 6.25-kHz Offset – Blocking Performance: 104 dB at 10 MHz – Excellent Receiver Sensitivity • –129 dBm at 300 bps • –123 dBm at 1.2 kbps • –110 dBm at 50 kbps – Very Low Phase Noise: –115 dBc/Hz at 10-kHz Offset • Suitable for Systems Targeting ETSI Category 1 • Separate 128-Byte RX and TX FIFOs • Support for Seamless Integration With the CC1190 Device for Increased Range Giving up to 3-dB Improvement in Sensitivity and up to +27-dBm Output Power • High Spectral Efficiency (9.6 kbps in 12.5-kHz Channel in Compliance With FCC Narrowbanding Mandate) • Power Supply – Wide Supply Voltage Range (2.0 V to 3.6 V) – Low Current Consumption: • RX: 2 mA in RX Sniff Mode • RX: 17 mA Peak Current in Low-Power Mode • RX: 26 mA Peak Current in HighPerformance Mode • TX: 47 mA at +14 dBm – Power Down: 0.12 μA (0.5 μA With Enhanced Wake-On-Radio (eWOR) Timer Running) 1.2 • • • • • Programmable Output Power up to +16 dBm With 0.4-dB Step Size • Automatic Output Power Ramping • Configurable Data Rates: 0 to 200 kbps • Supported Modulation Formats: 2-FSK, 2-GFSK, 4-FSK, 4-GFSK, MSK, OOK • WaveMatch: Advanced Digital Signal Processing for Improved Sync Detect Performance • RoHS-Compliant 5-mm x 5-mm No-Lead QFN 32-Pin Package (RHB) • Regulations – Suitable for Systems Targeting Compliance With – Europe: ETSI EN 300 220 Category 1, ETSI EN 54-25, ETSI EN 300 113, and EN 301 166 – US: FCC CFR47 Part 15, 24, 90, 101 – Japan: ARIB RCR STD-T30, T-67, T-108 • Peripherals and Support Functions – eWOR Functionality for Automatic Low-Power Receive Polling – Includes Functions for Antenna Diversity Support – Support for Retransmissions – Support for Auto-Acknowledge of Received Packets – TCXO Support and Control, also in Power Modes – Automatic Clear Channel Assessment (CCA) for Listen-Before-Talk (LBT) Systems – Built-in Coding Gain Support for Increased Range and Robustness – Digital RSSI Measurement – Temperature Sensor Applications Social Alarms Narrowband Ultra-Low-Power Wireless Systems With Channel Spacing Down to 4 kHz 169-, 315-, 433-, 868-, 915-, 920-, 950-MHz ISM/SRD Band Systems Wireless Metering and Wireless Smart Grid (AMR and AMI) • • • • • • • IEEE 802.15.4g Systems Home and Building Automation Wireless Alarm and Security Systems Industrial Monitoring and Control Wireless Healthcare Applications Wireless Sensor Networks and Active RFID Private Mobile Radios 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CC1125 SWRS120E – JUNE 2011 – REVISED OCTOBER 2014 1.3 www.ti.com Description The CC1125 device is a fully integrated single-chip radio transceiver designed for high performance at very low-power and low-voltage operation in cost-effective wireless systems. All filters are integrated, thus removing the need for costly external SAW and IF filters. The device is mainly intended for the ISM (Industrial, Scientific and Medical) and SRD (Short Range Device) frequency bands at 164–192 MHz, 274–320 MHz, 410–480 MHz, and 820–960 MHz. The CC1125 device provides extensive hardware support for packet handling, data buffering, burst transmissions, clear channel assessment, link quality indication, and Wake-On-Radio. The main operating parameters of the CC1125 device can be controlled through an SPI interface. In a typical system, the CC1125 device will be used with a microcontroller and only a few external passive components. Device Information (1) PART NUMBER CC1125RHB (1) 1.4 PACKAGE BODY SIZE VQFN (32) 5.00 mm x 5.00 mm For more information, see Section 8, Mechanical Packaging and Orderable Information Functional Block Diagram Figure 1-1 shows the system block diagram of the CC1125 device. CC112X (optional 32kHz clock intput) Ultra low power 32kHz auto-calibrated RC oscillator 4k byte ROM Power on reset MARC Main Radio Control Unit Ultra low power 16 bit MCU CSn (chip select) SPI Serial configuration and data interface SI (serial input) Interrupt and IO handler System bus SO (serial output) SCLK (serial clock) eWOR Enhanced ultra low power Wake On Radio timer Configuration and status registers Battery sensor / temp sensor 256 byte FIFO RAM buffer Packet handler and FIFO control (optional GPIO0-3) RF and DSP frontend Output power ramping and OOK / ASK modulation I Fully integrated Fractional-N Frequency Synthesizer Q High linearity LNA LNA_N (optional GPIO for antenna diversity) ifamp XOSC XOSC_Q2 90dB dynamic range ADC (optional bit clock) Channel filter ifamp LNA_P XOSC_Q1 Data interface with signal chain access Cordic 14dBm high efficiency PA Modulator PA (optional autodetected external XOSC / TCXO) Highly flexible FSK / OOK demodulator (optional low jitter serial data output for legacy protocols) 90dB dynamic range ADC AGC Automatic Gain Control, 60dB VGA range RSSI measurements and carrier sense detection Figure 1-1. Functional Block Diagram 2 Device Overview Copyright © 2011–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1125 CC1125 www.ti.com SWRS120E – JUNE 2011 – REVISED OCTOBER 2014 Table of Contents 1 Device Overview ......................................... 1 4.15 High-Speed Clock Input (TCXO) .................... 19 1.1 Features .............................................. 1 4.16 32-kHz Clock Input .................................. 19 1.2 Applications ........................................... 1 1.3 Description ............................................ 2 1.4 Functional Block Diagram ............................ 2 ........................... ....................................... 4.19 Temperature Sensor ............................... 4.20 Typical Characteristics .............................. Detailed Description ................................... 5.1 Block Diagram....................................... 5.2 Frequency Synthesizer .............................. 5.3 Receiver ............................................. 5.4 Transmitter .......................................... 5.5 Radio Control and User Interface ................... 5.6 4.5 Enhanced Wake-On-Radio (eWOR) ............ 5.7 Sniff Mode ........................................... 5.8 Antenna Diversity ................................... 5.9 WaveMatch .......................................... Typical Application Circuit ........................... Device and Documentation Support ............... 7.1 Device Support ...................................... 7.2 Documentation Support ............................. 7.3 Community Resources .............................. 7.4 Trademarks.......................................... 7.5 Electrostatic Discharge Caution ..................... 7.6 Glossary ............................................. 2 3 Revision History ......................................... 4 Terminal Configuration and Functions .............. 5 4 .......................................... 3.2 Pin Configuration ..................................... Specifications ............................................ 4.1 Absolute Maximum Ratings .......................... 4.2 Handling Ratings ..................................... 3.1 4.3 4.4 Pin Diagram 6 7 7 7 Recommended Operating Conditions (General Characteristics) ....................................... 7 Thermal Resistance Characteristics for RHB Package .............................................. 7 4.5 RF Characteristics .................................... 8 4.6 ................................ 8 ................. 9 Current Consumption, Transmit Modes .............. 9 Current Consumption, Receive Modes.............. 10 Receive Parameters................................. 11 Transmit Parameters ................................ 17 PLL Parameters ..................................... 18 Wake-up and Timing ................................ 19 High-Speed Crystal Oscillator ....................... 19 4.7 4.8 4.9 4.10 4.11 4.12 4.13 4.14 5 5 Regulatory Standards Current Consumption, Static Modes 6 7 8 4.17 Low Speed RC Oscillator 20 4.18 I/O and Reset 20 20 21 24 24 24 25 25 25 25 26 26 27 28 29 29 30 30 30 30 30 Mechanical Packaging and Orderable Information .............................................. 31 Table of Contents Copyright © 2011–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1125 3 CC1125 SWRS120E – JUNE 2011 – REVISED OCTOBER 2014 www.ti.com 2 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. This data manual revision history highlights the changes made to the SWRS120D device-specific data manual to make it an SWRS120E revision. Changes from Revision D (June 2014) to Revision E • • 4 Page Added Ambient to the temperature range condition and removed Tj from Temperature range ........................... 7 Added data to TCXO table ......................................................................................................... 19 Revision History Copyright © 2011–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1125 CC1125 www.ti.com SWRS120E – JUNE 2011 – REVISED OCTOBER 2014 3 Terminal Configuration and Functions 3.1 Pin Diagram 25 AVDD_PFD_CHP 26 DCPL_PFD_CHP 27 AVDD_SYNTH2 28 AVDD_XOSC DCPL_XOSC 29 30 XOSC_Q1 XOSC_Q2 31 32 EXT_XOSC Figure 3-1 shows pin names and locations for the CC1125 device. VDD_GUARD 1 24 LPF1 RESET_N 2 23 LPF0 GPIO3 3 22 AVDD_SYNTH1 GPIO2 4 21 DCPL_VCO DVDD 5 20 LNA_N DCPL 6 SI 7 SCLK 8 CC1125 19 LNA_P GND GROUND PAD 18 TRX_SW 17 PA 11 12 13 14 15 16 GPIO0 CSn DVDD AVDD_IF RBIAS AVDD_RF N.C. SO (GPIO1) 10 9 Figure 3-1. Package 5-mm × 5-mm QFN Terminal Configuration and Functions Copyright © 2011–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1125 5 CC1125 SWRS120E – JUNE 2011 – REVISED OCTOBER 2014 3.2 www.ti.com Pin Configuration The following table lists the pin-out configuration for the CC1125 device. PIN NO. PIN NAME TYPE / DIRECTION DESCRIPTION 1 VDD_GUARD Power 2.0–3.6 V VDD 2 RESET_N Digital input Asynchronous, active-low digital reset 3 GPIO3 Digital I/O General-purpose I/O 4 GPIO2 Digital I/O General-purpose I/O 5 DVDD Power 2.0–3.6 VDD to internal digital regulator 6 DCPL Power Digital regulator output to external decoupling capacitor 7 SI Digital input Serial data in 8 SCLK Digital input Serial data clock 9 SO(GPIO1) Digital I/O Serial data out (general-purpose I/O) 10 GPIO0 Digital I/O General-purpose I/O 11 CSn Digital input Active-low chip select 12 DVDD Power 2.0–3.6 V VDD 13 AVDD_IF Power 2.0–3.6 V VDD 14 RBIAS Analog External high-precision resistor 15 AVDD_RF Power 2.0–3.6 V VDD 16 N.C. 17 PA Analog Single-ended TX output (requires DC path to VDD) 18 TRX_SW Analog TX and RX switch. Connected internally to GND in TX and floating (high-impedance) in RX. 19 LNA_P Analog Differential RX input (requires DC path to GND) 20 LNA_N Analog Differential RX input (requires DC path to GND) 21 DCPL_VCO Power Pin for external decoupling of VCO supply regulator 22 AVDD_SYNTH1 Power 2.0–3.6 V VDD 23 LPF0 Analog External loop filter components 24 LPF1 Analog External loop filter components 25 AVDD_PFD_CHP Power 2.0–3.6 V VDD 26 DCPL_PFD_CHP Power Pin for external decoupling of PFD and CHP regulator 27 AVDD_SYNTH2 Power 2.0–3.6 V VDD 28 AVDD_XOSC Power 2.0–3.6 V VDD 29 DCPL_XOSC Power Pin for external decoupling of XOSC supply regulator 30 XOSC_Q1 Analog Crystal oscillator pin 1 (must be grounded if a TCXO or other external clock connected to EXT_XOSC is used) 31 XOSC_Q2 Analog Crystal oscillator pin 2 (must be left floating if a TCXO or other external clock connected to EXT_XOSC is used) 32 EXT_XOSC Digital input Pin for external clock input (must be grounded if a regular crystal connected to XOSC_Q1 and XOSC_Q2 is used) – GND Ground pad The ground pad must be connected to a solid ground plane. 6 Not connected Terminal Configuration and Functions Copyright © 2011–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1125 CC1125 www.ti.com SWRS120E – JUNE 2011 – REVISED OCTOBER 2014 4 Specifications All measurements performed on CC1120EM_868_915 rev.1.0.1, CC1120EM_955 rev.1.2.1, CC1120EM_420_470 rev.1.0.1 or CC1120EM_169 rev.1.2 (fxosc = 32 MHz), and CC1125EM_868_915 rev.1.1.0, CC1125EM_420_470 rev.1.1.0, CC1125EM_169 rev.1.1.0, CC1125EM-Cat1-868 (fxosc = 40 MHz). Absolute Maximum Ratings (1) (2) 4.1 PARAMETER MIN Supply voltage (VDD, AVDD_x) –0.3 MAX UNIT CONDITION 3.9 V All supply pins must have the same voltage Solder reflow temperature 260 °C According to IPC/JEDEC J-STD-020 Input RF level +10 dBm Voltage on any digital pin –0.3 VDD+0.3 V Voltage on analog pins (including DCPL pins) –0.3 2.0 V (1) (2) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under general characteristics is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage values are with respect to VSS, unless otherwise noted. 4.2 Handling Ratings Tstg Storage temperature range Electrostatic discharge (ESD) performance: VESD (1) (2) max 3.9 Human body model (HBM), per ANSI/ESDA/JEDEC JS001 Charged device model (CDM), per JESD22C101 (2) (1) All pins MIN MAX UNIT –40 125 °C –2 2 kV –500 500 V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V HBM allows safe manufacturing with a standard ESD control process. 4.3 Recommended Operating Conditions (General Characteristics) PARAMETER MIN MAX UNIT Voltage supply range 2.0 3.6 V 0 VDD V –40 85 °C Voltage on digital inputs Temperature range 4.4 TYP CONDITION All supply pins must have the same voltage Ambient Thermal Resistance Characteristics for RHB Package °C/W (1) AIR FLOW (m/s) (2) RθJC Junction-to-case (top) 21.1 0.00 RθJB Junction-to-board 5.3 0.00 RθJA Junction-to-free air 31.3 0.00 PsiJT Junction-to-package top 0.2 0.00 PsiJB Junction-to-board 5.3 0.00 RθJC Junction-to-case (bottom) 0.8 0.00 (1) (2) These values are based on a JEDEC-defined 2S2P system (with the exception of the Theta JC [RΘJC] value, which is based on a JEDEC-defined 1S0P system) and will change based on environment as well as application. For more information, see these EIA/JEDEC standards: • JESD51-2, Integrated Circuits Thermal Test Method Environmental Conditions - Natural Convection (Still Air) • JESD51-3, Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages • JESD51-7, High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages • JESD51-9, Test Boards for Area Array Surface Mount Package Thermal Measurements Power dissipation of 40 mW and an ambient temperature of 25ºC is assumed. m/s = meters per second Specifications Copyright © 2011–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1125 7 CC1125 SWRS120E – JUNE 2011 – REVISED OCTOBER 2014 4.5 www.ti.com RF Characteristics PARAMETER MIN TYP 820 Frequency bands Data rate step size 4.6 MHz 410 480 MHz (320) MHz 164 192 MHz (205) (240) MHz (136.7) (160) MHz CONDITION See SWRA398 for more information. Contact TI for more information about the use of these frequency bands. 30 Hz In 820–950 MHz band 15 Hz In 410–480 MHz band 6 Hz In 164–192 MHz band 0 200 kbps Packet mode 0 100 kbps Transparent mode 1e-4 bps Regulatory Standards PERFORMANCE MODE Frequency Band Suitable for compliance with 820–960 MHz ARIB T-108 ARIB T-96 ETSI EN 300 220 category 1 ETSI EN 54-25 FCC PART 101 FCC PART 24 SUBMASK D FCC PART 15.247 FCC PART 15.249 FCC PART 90 MASK G FCC PART 90 MASK J Performance also suitable for systems targeting maximum allowed output power in the respective bands, using a range extender such as the CC1190 device 410–480 MHz ARIB T-67 ARIB RCR STD-30 ETSI EN 301 166 ETSI EN 300 113 ETSI EN 300 220 category 1 FCC PART 90 MASK D FCC PART 90 MASK E FCC PART 90 MASK G Performance also suitable for systems targeting maximum allowed output power in the respective bands, using a range extender 164–192 MHz ETSI EN 300 220 category 1 ETSI EN 301 166 ETSI EN 300 113 FCC PART 90 MASK C FCC PART 90 MASK D FCC PART 90 MASK E Performance also suitable for systems targeting maximum allowed output power in the respective bands, using a range extender 820–960 MHz ETSI EN 300 220 category 2 FCC PART 15.247 FCC PART 15.249 410–480 MHz ETSI EN 300 220 category 2 164–192 MHz ETSI EN 300 220 category 2 High-performance mode Low-power mode 8 UNIT 960 (273.3) Frequency resolution Data rate MAX Specifications Comments Copyright © 2011–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1125 CC1125 www.ti.com 4.7 SWRS120E – JUNE 2011 – REVISED OCTOBER 2014 Current Consumption, Static Modes TA = 25°C, VDD = 3.0 V, fxosc = 32 MHz if nothing else stated. PARAMETER MIN Power down with retention TYP MAX UNIT 0.12 1 µA CONDITION 0.5 µA Low-power RC oscillator running XOFF mode 170 µA Crystal oscillator / TCXO disabled IDLE mode 1.3 mA Clock running, system waiting with no radio activity 4.8 4.8.1 Current Consumption, Transmit Modes 950-MHz Band (High-Performance Mode) TA = 25°C, VDD = 3.0 V, fxosc = 32 MHz if nothing else stated PARAMETER MIN TYP MAX UNIT TX current consumption +10 dBm 37 mA TX current consumption 0 dBm 26 mA 4.8.2 CONDITION 868-, 915-, and 920-MHz Bands (High-Performance Mode) TA = 25°C, VDD = 3.0 V, fxosc = 40 MHz if nothing else stated PARAMETER MIN TYP MAX UNIT TX current consumption +14 dBm 47 mA TX current consumption +10 dBm 38 mA 4.8.3 CONDITION 434-MHz Band (High-Performance Mode) TA = 25°C, VDD = 3.0 V, fxosc = 40 MHz if nothing else stated PARAMETER MIN TYP MAX UNIT TX current consumption +15 dBm 51 mA TX current consumption +14 dBm 47 mA TX current consumption +10 dBm 36 mA 4.8.4 CONDITION 169-MHz Band (High Performance Mode) TA = 25°C, VDD = 3.0 V, fxosc = 40 MHz if nothing else stated PARAMETER MIN TYP MAX UNIT TX current consumption +15 dBm 56 mA TX current consumption +14 dBm 52 mA TX current consumption +10 dBm 40 mA 4.8.5 CONDITION Low-Power Mode TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz, fxosc = 32 MHz if nothing else stated PARAMETER TX current consumption +10 dBm MIN TYP MAX 32 UNIT CONDITION mA Specifications Copyright © 2011–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1125 9 CC1125 SWRS120E – JUNE 2011 – REVISED OCTOBER 2014 4.9 4.9.1 www.ti.com Current Consumption, Receive Modes High-Performance Mode TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz, fxosc = 32 MHz if nothing else stated PARAMETER MIN TYP MAX UNIT RX wait for sync 1.2 kbps, 4-byte preamble 2 mA 38.4 kbps, 4-byte preamble 13.4 mA 433-, 868-, 915-, and 920-MHz bands 26 mA 169-MHz band 27 mA Average current consumption Check for data packet every 1 second using wake on radio 15 µA CONDITION Using RX sniff mode, where the receiver wakes up at regular intervals to look for an incoming packet RX peak current, fxosc = 40 MHz 4.9.2 Peak current consumption during packet reception at the sensitivity threshold 50 kbps, 5-byte preamble, 40-kHz RC oscillator used as sleep timer Low-Power Mode TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz, fxosc = 32 MHz if nothing else stated PARAMETER RX peak current low-power RX mode 1.2 kbps 10 MIN TYP MAX UNIT 17 Specifications mA CONDITION Peak current consumption during packet reception at the sensitivity level Copyright © 2011–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1125 CC1125 www.ti.com SWRS120E – JUNE 2011 – REVISED OCTOBER 2014 4.10 Receive Parameters All RX measurements made at the antenna connector, to a bit error rate (BER) limit of 1%. 4.10.1 General Receive Parameters (High-Performance Mode) TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated PARAMETER MIN Saturation TYP MAX +10 UNIT CONDITION dBm Digital channel filter programmable bandwidth fxosc = 32 MHz 2.8 200 fxosc = 40 MHz 3.5 250 kHz kHz IIP3, normal mode –14 dBm At maximum gain IIP3, high linearity mode –8 dBm Using 6-dB gain reduction in front end ±12 % With carrier sense detection enabled and assuming 4-byte preamble ±0.2 % With carrier sense detection disabled –56 dBm < –57 dBm Datarate offset tolerance Spurious emissions 1–13 GHz (VCO leakage at 3.5 GHz) 30 MHz to 1 GHz Radiated emissions measured according to ETSI EN 300 220, fc = 869.5 MHz Optimum source impedance 868-, 915-, and 920-MHz bands 60 + j60 / 30 + j30 Ω 433-MHz band 100 + j60 / 50+ j30 Ω 169-MHz band 140 + j40 / 70 + j20 Ω (Differential or single-ended RX configurations) Specifications Copyright © 2011–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1125 11 CC1125 SWRS120E – JUNE 2011 – REVISED OCTOBER 2014 www.ti.com 4.10.2 RX Performance in 950-MHz Band (High-Performance Mode) TA = 25°C, VDD = 3.0 V, fxosc = 32 MHz if nothing else stated PARAMETER Sensitivity Note: Sensitivity can be improved if the TX and RX matching networks are separated. Blocking and Selectivity 1.2 kbps 2-FSK, 12.5-kHz channel separation, 4-kHz deviation, 10-kHz channel filter Blocking and Selectivity 50 kbps 2-GFSK, 200-kHz channel separation, 25-kHz deviation, 100-kHz channel filter (Same modulation format as 802.15.4g Mandatory Mode) Blocking and Selectivity 200 kbps 4-GFSK, 83-kHz deviation (outer symbols), 200-kHz channel filter, zero IF (1) (2) 12 MIN UNIT CONDITION –120 TYP MAX dBm 1.2 kbps, DEV=4 kHz CHF=10 kHz (1) –107 dBm 50 kbps 2GFSK, DEV=25 kHz, CHF=100 kHz –100 dBm 200 kbps, DEV=83 kHz (outer symbols), CHF=200 kHz, 4GFSK (2) 51 dB ± 12.5 kHz (adjacent channel) 52 dB ± 25 kHz (alternate channel) 73 dB ± 1 MHz 76 dB ± 2 MHz 81 dB ± 10 MHz 43 dB ± 200 kHz (adjacent channel) 51 dB ± 400 kHz (alternate channel) 62 dB ± 1 MHz 65 dB ± 2 MHz 71 dB ± 10 MHz 37 dB ± 200 kHz (adjacent channel) 44 dB ± 400 kHz (alternate channel) 55 dB ± 1 MHz 58 dB ± 2 MHz 64 dB ± 10 MHz DEV is short for deviation, CHF is short for channel filter bandwidth BT=0.5 is used in all GFSK measurements Specifications Copyright © 2011–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1125 CC1125 www.ti.com SWRS120E – JUNE 2011 – REVISED OCTOBER 2014 4.10.3 RX Performance in 868-, 915-, and 920-MHz Bands (High-Performance Mode) TA = 25°C, VDD = 3.0 V, fxosc = 32 MHz if nothing else stated if nothing else stated PARAMETER MIN Sensitivity Blocking and Selectivity 0.3-kbps 2-FSK, 6.25-kHz channel separation, 1-kHz deviation, 3.8-kHz channel filter fxosc = 40 MHz using TCXO Blocking and Selectivity 1.2-kbps 2-FSK, 12.5-kHz channel separation, 4-kHz deviation, 10-kHz channel filter fxosc = 40 MHz using TCXO Blocking and Selectivity 1.2-kbps 2-GFSK, 25-kHz channel separation, 4-kHz deviation, 16-kHz channel filter fxosc = 40 MHz using TCXO Using external SAW filter for compliance with ETSI category 1 Blocking and Selectivity 38.4-kbps 2-GFSK, 100-kHz channel separation, 20-kHz deviation, 100kHz channel filter Blocking and Selectivity 50-kbps 2-GFSK, 200-kHz channel separation, 25-kHz deviation, 100kHz channel filter (Same modulation format as 802.15.4g Mandatory Mode) Blocking and Selectivity 200-kbps 4-GFSK, 83-kHz deviation (outer symbols), 200-kHz channel filter, zero IF Image rejection (Image compensation enabled) fxosc = 40 MHz using TCXO (1) TYP MAX UNIT CONDITION –129 dBm 300 bps, DEV=1 kHz CHF=3.8 kHz (1), fxosc = 40 MHz –123 dBm 1.2 kbps, DEV=20 kHz CHF=50 kHz –114 dBm 4.8 kbps OOK –110 dBm 38.4 kbps, DEV=20 kHz CHF=100 kHz –110 dBm 50 kbps 2GFSK, DEV=25 kHz, CHF=100 kHz –103 dBm 200 kbps, DEV=83 kHz (outer symbols), CHF=200 kHz, 4GFSK 62 dB ± 6.25 kHz (adjacent channel) 63 dB ± 12.5 kHz (alternate channel) 83 dB ± 1 MHz 87 dB ± 2 MHz 91 dB ± 10 MHz 58 dB + 12.5 kHz (adjacent channel) 58 dB ± 25 kHz (alternate channel) 78 dB ± 1 MHz 82 dB ± 2 MHz 86 dB ± 10 MHz 58 dB ± 25 kHz (alternate channel) 77 dB ± 1 MHz 106 dB ± 2 MHz 101 dB ± 10 MHz 42 dB ± 100 kHz (adjacent channel) 43 dB ± 200 kHz (alternate channel) 62 dB ± 1 MHz 66 dB ± 2 MHz 74 dB ± 10 MHz 43 dB ± 200 kHz (adjacent channel) 50 dB ± 400 kHz (alternate channel) 61 dB ± 1 MHz 65 dB ± 2 MHz 74 dB ± 10 MHz 36 dB ± 200 kHz (adjacent channel) 44 dB ± 400 kHz (alternate channel) 55 dB ± 1 MHz 59 dB ± 2 MHz 67 dB ± 10 MHz 58 dB 1.2 kbps, DEV=4 kHz CHF=10 kHz (1), image at -125 kHz DEV is short for deviation, CHF is short for channel filter bandwidth Specifications Copyright © 2011–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1125 13 CC1125 SWRS120E – JUNE 2011 – REVISED OCTOBER 2014 www.ti.com 4.10.4 RX Performance in 434-MHz Band (High-Performance Mode) TA = 25°C, VDD = 3.0 V, fxosc = 32 MHz if nothing else stated if nothing else stated PARAMETER Sensitivity Blocking and Selectivity 0.3-kbps 2-FSK, 6.25-kHz channel separation, 1-kHz deviation, 3.8-kHz channel filter fxosc = 40 MHz using TCXO Blocking and Selectivity 1.2-kbps 2-FSK, 12.5-kHz channel separation, 4-kHz deviation, 10-kHz channel filter fxosc = 40 MHz using TCXO Blocking and Selectivity 38.4-kbps 2-GFSK, 100-kHz channel separation, 20-kHz deviation, 100-kHz channel filter (1) 14 MIN TYP MAX UNIT CONDITION –129 dBm 300 bps, DEV=1 kHz, CHF=3.8 kHz (1) fxosc = 40 MHz –123 dBm 1.2 kbps, DEV=4 kHz CHF=10 kHz (1) –109 dBm 50-kbps 2-GFSK, DEV=25 kHz, CHF=100 kHz (1) –116 dBm 1.2 kbps, DEV=20 kHz CHF=50 kHz (1) 65 dB + 6.25 kHz (adjacent channel) 66 dB + 12.5 kHz (alternate channel) 86 dB ± 1 MHz 90 dB ± 2 MHz 95 dB ± 10 MHz 60 dB + 12.5 kHz (adjacent channel) 61 dB ± 25 kHz (alternate channel) 80 dB ± 1 MHz 85 dB ± 2 MHz 91 dB ± 10 MHz 47 dB + 100 kHz (adjacent channel) 50 dB ± 200 kHz (alternate channel) 67 dB ± 1 MHz 71 dB ± 2 MHz 78 dB ± 10 MHz DEV is short for deviation, CHF is short for channel filter bandwidth Specifications Copyright © 2011–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1125 CC1125 www.ti.com SWRS120E – JUNE 2011 – REVISED OCTOBER 2014 4.10.5 RX Performance in 169-MHz Band (High-Performance Mode) TA = 25°C, VDD = 3.0 V, fxosc = 32 MHz if nothing else stated PARAMETER MIN Sensitivity Blocking and Selectivity 0.3-kbps 2-FSK, 6.25-kHz channel separation, 1-kHz deviation, 3.8-kHz channel filter fxosc = 40 MHz using TCXO Blocking and Selectivity 1.2-kbps 2-FSK, 12.5-kHz channel separation, 4-kHz deviation, 10-kHz channel filter fxosc = 40 MHz using TCXO TYP MAX UNIT CONDITION –129 dBm 300 bps, DEV=1 kHz, CHF=3.8 kHz (1) fxosc = 40 MHz –123 dBm 1.2 kbps, DEV=4 kHz CHF=10 kHz (1) 67 dB ± 6.25 kHz (adjacent channel) 67 dB + 12.5 kHz (alternate channel) 88 dB ± 1 MHz 101 dB –2 MHz 104 dB ± 10 MHz 63 dB ± 12.5 kHz (adjacent channel) 65 dB ± 25 kHz (alternate channel) 82 dB ± 1 MHz 86 dB ± 2 MHz –10 MHz 93 dB Spurious Response Rejection 1.2-kbps 2-FSK, 12.5-kHz channel separation, 4-kHz deviation, 10-kHz channel filter 70 dB Image Rejection (Image compensation enabled) 66 dB (1) 1.2 kbps, DEV=4 kHz CHF=10 kHz (1), image at –125 kHz DEV is short for deviation, CHF is short for channel filter bandwidth Specifications Copyright © 2011–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1125 15 CC1125 SWRS120E – JUNE 2011 – REVISED OCTOBER 2014 www.ti.com 4.10.6 RX Performance in Low-Power Mode TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz, fxosc = 32 MHz if nothing else stated PARAMETER UNIT CONDITION –111 dBm 1.2 kbps, DEV=4 kHz CHF=10 kHz (1) –99 dBm 38.4 kbps, DEV=50 kHz CHF=100 kHz (1) –99 dBm 50-kbps 2-GFSK, DEV=25 kHz, CHF=100 kHz (1) 46 dB ± 12.5 kHz (adjacent channel) 46 dB ± 25 kHz (alternate channel) 73 dB ± 1 MHz 78 dB ± 2 MHz 79 dB ± 10 MHz 43 dB ± 50 kHz (adjacent channel) 45 dB + 100 kHz (alternate channel) 71 dB ± 1 MHz 74 dB ± 2 MHz 75 dB ± 10 MHz 37 dB + 100 kHz (adjacent channel) 43 dB + 200 kHz (alternate channel) 58 dB ± 1 MHz 62 dB ± 2 MHz 64 dB + 10 MHz Blocking and Selectivity 50-kbps 2-GFSK, 200-kHz channel separation, 25-kHz deviation, 100-kHz channel filter (Same modulation format as 802.15.4g Mandatory Mode) 43 dB + 200 kHz (adjacent channel) 52 dB + 400 kHz (alternate channel) 60 dB ± 1 MHz 64 dB ± 2 MHz 65 dB ± 10 MHz Saturation +10 dBm Sensitivity Blocking and Selectivity 1.2-kbps 2-FSK, 12.5-kHz channel separation, 4-kHz deviation, 10-kHz channel filter Blocking and Selectivity 1.2-kbps 2-FSK, 50-kHz channel separation, 20-kHz deviation, 50-kHz channel filter Blocking and Selectivity 38.4-kbps 2-GFSK, 100-kHz channel separation, 20-kHz deviation, 100-kHz channel filter (1) 16 MIN TYP MAX DEV is short for deviation, CHF is short for channel filter bandwidth Specifications Copyright © 2011–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1125 CC1125 www.ti.com SWRS120E – JUNE 2011 – REVISED OCTOBER 2014 4.11 Transmit Parameters TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz, fxosc = 32 MHz if nothing else stated PARAMETER MIN UNIT CONDITION +12 dBm At 950 MHz +14 dBm At 915- and 920-MHz +15 dBm At 915- and 920-MHz with VDD = 3.6 V +15 dBm At 868 MHz +16 dBm At 868 MHz with VDD = 3.6 V +15 dBm At 433 MHz +16 dBm At 433 MHz with VDD = 3.6 V +15 dBm At 169 MHz +16 dBm At 169 MHz with VDD = 3.6 V –11 dBm Within fine step size range –40 dBm Within coarse step size range 0.4 dB Within fine step size range –75 dBc 4-GFSK 9.6 kbps in 12.5-kHz channel, measured in 100-Hz bandwidth at 434 MHz (FCC Part 90 Mask D compliant) –58 dBc 4-GFSK 9.6 kbps in 12.5-kHz channel, measured in 8.75-kHz bandwidth (ETSI 300 220 compliant) –61 dBc 2-GFSK 2.4 kbps in 12.5-kHz channel, 1.2-kHz deviation 50-ms periods). Optimum load Specifications Copyright © 2011–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1125 17 CC1125 SWRS120E – JUNE 2011 – REVISED OCTOBER 2014 www.ti.com 4.12 PLL Parameters 4.12.1 High-Performance Mode TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz, fxosc = 40 MHz using TCXO if nothing else stated PARAMETER MIN TYP Phase noise in 950-MHz band fxosc = 32 MHz Phase noise in 868-, 915-, 920-MHz bands Phase noise in 433-MHz band Phase noise in 169-MHz band MAX UNIT CONDITION –100 dBc/Hz ± 10 kHz offset –103 dBc/Hz ± 100 kHz offset –123 dBc/Hz ± 1 MHz offset –101 dBc/Hz ± 10 kHz offset –102 dBc/Hz ± 100 kHz offset –124 dBc/Hz ± 1 MHz offset –107 dBc/Hz ± 10 kHz offset –110 dBc/Hz ± 100 kHz offset –130 dBc/Hz ± 1 MHz offset –115 dBc/Hz ± 10 kHz offset –115 dBc/Hz ± 100 kHz offset –135 dBc/Hz ± 1 MHz offset 4.12.2 Low-Power Mode TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz, fxosc = 32 MHz if nothing else stated PARAMETER Phase noise in 950-MHz band Phase noise in 868-, 915- , and 920-MHz bands Phase noise in 433-MHz band Phase noise in 169-MHz band 18 MIN TYP MAX UNIT CONDITION –90 dBc/Hz ± 10 kHz offset –92 dBc/Hz ± 100 kHz offset –124 dBc/Hz ± 1 MHz offset –95 dBc/Hz ± 10 kHz offset –95 dBc/Hz ± 100 kHz offset –124 dBc/Hz ± 1 MHz offset –98 dBc/Hz ± 10 kHz offset –102 dBc/Hz ± 100 kHz offset –129 dBc/Hz ± 1 MHz offset –106 dBc/Hz ± 10 kHz offset –110 dBc/Hz ± 100 kHz offset –136 dBc/Hz ± 1 MHz offset Specifications Copyright © 2011–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1125 CC1125 www.ti.com SWRS120E – JUNE 2011 – REVISED OCTOBER 2014 4.13 Wake-up and Timing TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz, fxosc = 32 MHz if nothing else stated PARAMETER MIN TYP Powerdown to IDLE IDLE to RX/TX RX/TX turnaround RX/TX to IDLE time MAX UNIT CONDITION 0.4 ms Depends on crystal 166 µs Calibration disabled 461 µs Calibration enabled 50 µs 296 µs Calibrate when leaving RX/TX enabled 0 µs Calibrate when leaving RX/TX disabled Frequency synthesizer calibration 391 µs When using SCAL strobe Minimum required number of preamble bytes 0.5 bytes Time from start RX until valid RSSI, including gain settling (function of channel bandwidth. Programmable for trade-off between speed and accuracy) 4.6 ms 12.5-kHz channels 0.3 ms 200-kHz channels Required for RF front-end gain settling only. Digital demodulation does not require preamble for settling. 4.14 High-Speed Crystal Oscillator TA = 25°C, VDD = 3.0 V if nothing else stated PARAMETER MIN Crystal frequency TYP MAX 32 44 Load capacitance (CL) UNIT CONDITION MHz It is expected that there will be degraded sensitivity at multiples of XOSC/2 in RX, and an increase in spurious emissions when the RF channel is close to multiples of XOSC in TX. We recommend that the RF channel is kept RX_BW/2 away from XOSC/2 in RX, and that the level of spurious emissions be evaluated if the RF channel is closer than 1 MHz to multiples of XOSC in TX. 10 pF ESR
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