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CC1175
SWRS116F – AUGUST 2011 – REVISED OCTOBER 2014
CC1175 High-Performance RF Transmitter for Narrowband Systems
1 Device Overview
1.1
Features
1
• High-Performance, Single-Chip Transmitter
– Very Low Phase Noise: –111 dBc/Hz at
10-kHz Offset
• High Spectral Efficiency (9.6 kbps in 12.5-kHz
Channel in Compliance With FCC Narrowbanding
Mandate)
• 128-Byte TX FIFO
• Support for Seamless Integration With the CC1190
Device for Increased Range Giving up to +27-dBm
Output Power
• Programmable Output Power up to +16 dBm With
0.4-dB Step Size
• Power Supply
– Wide Supply Voltage Range (2.0 V to 3.6 V)
– Low Current Consumption:
• TX: 45 mA at +14 dBm
– Power Down: 0.12 μA (0.5 μA With Timer
Running)
1.2
•
•
•
Applications
One-way Narrowband Ultra-Low Power Wireless
Systems With Channel Spacing Down to 6.25 kHz
169-, 315-, 433-, 868-, 915-, 920-, 950-MHz
ISM/SRD Band Systems
Wireless Metering and Wireless Smart Grid (AMR
and AMI)
1.3
• Automatic Output Power Ramping
• Configurable Data Rates: 0 to 200 kbps
• Supported Modulation Formats: 2-FSK,
2-GFSK, 4-FSK, 4-GFSK, MSK, OOK
• RoHS-Compliant 5-mm x 5-mm No-Lead QFN 32Pin Package (RHB)
• Regulations – Suitable for Systems Targeting
Compliance With
– Europe: ETSI EN 300 220, ETSI EN 54-25
– US: FCC CFR47 Part 15, FCC CFR47 Part 90,
24, and 101
– Japan: ARIB RCR STD-T30, ARIB STD-T67,
ARIB STD-T108
• Peripherals and Support Functions
– TCXO Support and Control, also in Power
Modes
– Optional Coding Gain Feature for Increased
Range and Robustness
– Temperature Sensor
•
•
•
•
•
•
IEEE 802.15.4g Systems
Home and Building Automation
Wireless Alarm and Security Systems
Industrial Monitoring and Control
Wireless Healthcare Applications
Wireless Sensor Networks and Active RFID
Description
The CC1175 device is a fully integrated single-chip radio transmitter designed for high performance at
very low-power and low-voltage operation in cost-effective wireless systems. All filters are integrated, thus
removing the need for costly external SAW and IF filters. The device is mainly intended for the ISM
(Industrial, Scientific, and Medical) and SRD (Short Range Device) frequency bands at 164–192 MHz,
274–320 MHz, 410–480 MHz, and 820–960 MHz.
The CC1175 device provides extensive hardware support for packet handling, data buffering, and burst
transmissions. The main operating parameters of the CC1175 device can be controlled through an SPI
interface. In a typical system, the CC1175 device will be used with a microcontroller and only a few
external passive components.
Device Information (1)
PART NUMBER
CC1175RHB
(1)
PACKAGE
BODY SIZE
VQFN (32)
5.00 mm x 5.00 mm
For more information, see Section 8, Mechanical Packaging and Orderable Information
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
CC1175
SWRS116F – AUGUST 2011 – REVISED OCTOBER 2014
1.4
www.ti.com
Functional Block Diagram
Figure 1-1 shows the system block diagram of the CC1175 device.
CC1175
Power on reset
MARC
Main Radio Control Unit
Ultra low power 16 bit
MCU
4k byte
ROM
SPI
Serial configuration
and data interface
CSn (chip select)
SI (serial input)
Interrupt and
IO handler
System bus
SO (serial output)
SCLK (serial clock)
Battery sensor /
temp sensor
Configuration and
status registers
128 byte
TX FIFO RAM
buffer
Packet handler
and FIFO control
(optional GPIO0-3)
RF and DSP frontend
Output power ramping and OOK / ASK modulation
14dBm high
efficiency PA
Fully integrated Fractional-N
Frequency Synthesizer
Modulator
PA
(optional autodetected
external XOSC / TCXO)
XOSC_Q1
Data interface with
signal chain access
XOSC
XOSC_Q2
Figure 1-1. Functional Block Diagram
2
Device Overview
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SWRS116F – AUGUST 2011 – REVISED OCTOBER 2014
Table of Contents
Device Overview ......................................... 1
4.12
High-Speed Crystal Oscillator ....................... 13
1.1
Features .............................................. 1
4.13
High-Speed Clock Input (TCXO) .................... 13
1.2
Applications ........................................... 1
4.14
32-kHz Clock Input .................................. 13
1.3
Description ............................................ 1
4.15
Low-Speed RC Oscillator ........................... 14
1.4
Functional Block Diagram ............................ 2
4.16
I/O and Reset
2
3
Revision History ......................................... 4
Terminal Configuration and Functions .............. 5
4.17
Temperature Sensor ................................ 14
4.18
Typical Characteristics .............................. 15
4
..........................................
3.2
Pin Configuration .....................................
Specifications ............................................
4.1
Absolute Maximum Ratings ..........................
4.2
Handling Ratings .....................................
1
3.1
4.3
4.4
Pin Diagram
5
5.1
Block Diagram....................................... 17
5.2
Frequency Synthesizer .............................. 17
7
5.3
Transmitter .......................................... 18
7
5.4
Radio Control and User Interface ................... 18
Recommended Operating Conditions (General
Characteristics) ....................................... 7
Thermal Resistance Characteristics for RHB
Package .............................................. 7
5.5
Low-Power and High-Performance Modes
4.6
................................ 9
Current Consumption, Static Modes ................. 9
Current Consumption, Transmit Modes ............. 10
Transmit Parameters ................................ 11
PLL Parameters ..................................... 12
Wake-up and Timing ................................ 13
4.9
4.10
4.11
Detailed Description ................................... 17
6
RF Characteristics .................................... 8
4.8
14
7
4.5
4.7
5
.......................................
6
7
Regulatory Standards
8
.........
18
Typical Application Circuit ........................... 19
Device and Documentation Support ............... 20
7.1
Device Support ...................................... 20
7.2
Documentation Support ............................. 21
7.3
Community Resources .............................. 21
7.4
Trademarks.......................................... 21
7.5
Electrostatic Discharge Caution ..................... 21
7.6
Glossary ............................................. 21
Mechanical Packaging and Orderable
Information .............................................. 22
Table of Contents
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CC1175
SWRS116F – AUGUST 2011 – REVISED OCTOBER 2014
www.ti.com
2 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
This data manual revision history highlights the changes made to the SWRS116E device-specific data
manual to make it an SWRS116F revision.
Changes from Revision E (June 2014) to Revision F
•
•
4
Page
Added Ambient to the temperature range condition and removed Tj from Temperature range ........................... 7
Added data to TCXO table ......................................................................................................... 13
Revision History
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SWRS116F – AUGUST 2011 – REVISED OCTOBER 2014
3 Terminal Configuration and Functions
3.1
Pin Diagram
25 AVDD_PFD_CHP
26 DCPL_PFD_CHP
27 AVDD_SYNTH2
28 AVDD_XOSC
DCPL_XOSC
29
30 XOSC_Q1
XOSC_Q2
31
32 EXT_XOSC
Figure 3-1 shows pin names and locations for the CC1175 device.
VDD_GUARD
1
24
LPF1
RESET_N
2
23
LPF0
GPIO3
3
22
AVDD_SYNTH1
GPIO2
4
21
DCPL_VCO
DVDD
5
20
GND
DCPL
6
SI
7
SCLK
8
CC1175
19 GND
GND
GROUND PAD
18
N.C.
17
PA
11
12
13
14
15
16
GPIO0
CSn
DVDD
AVDD_IF
RBIAS
AVDD_RF
N.C.
SO (GPIO1)
10
9
Figure 3-1. Package 5-mm × 5-mm QFN
Terminal Configuration and Functions
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SWRS116F – AUGUST 2011 – REVISED OCTOBER 2014
3.2
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Pin Configuration
The following table lists the pin-out configuration for the CC1175 device.
PIN NO.
PIN NAME
TYPE / DIRECTION
DESCRIPTION
1
VDD_GUARD
Power
2.0–3.6 V VDD
2
RESET_N
Digital input
Asynchronous, active-low digital reset
3
GPIO3
Digital I/O
General-purpose I/O
4
GPIO2
Digital I/O
General-purpose I/O
5
DVDD
Power
2.0–3.6 VDD to internal digital regulator
6
DCPL
Power
Digital regulator output to external decoupling
capacitor
7
SI
Digital input
Serial data in
8
SCLK
Digital input
Serial data clock
9
SO(GPIO1)
Digital I/O
Serial data out (general-purpose I/O)
10
GPIO0
Digital I/O
General-purpose I/O
11
CSn
Digital input
Active-low chip select
12
DVDD
Power
2.0–3.6 V VDD
13
AVDD_IF
Power
2.0–3.6 V VDD
14
RBIAS
Analog
External high-precision resistor
15
AVDD_RF
Power
2.0–3.6 V VDD
16
N.C.
17
PA
18
N.C.
19
GND1
Analog
Analog ground
20
GND0
Analog
Analog ground
21
DCPL_VCO
Power
Pin for external decoupling of VCO supply regulator
22
AVDD_SYNTH1
Power
2.0–3.6 V VDD
23
LPF0
Analog
External loop filter components
24
LPF1
Analog
External loop filter components
25
AVDD_PFD_CHP
Power
2.0–3.6 V VDD
26
DCPL_PFD_CHP
Power
Pin for external decoupling of PFD and CHP
regulator
27
AVDD_SYNTH2
Power
2.0–3.6 V VDD
28
AVDD_XOSC
Power
2.0–3.6 V VDD
29
DCPL_XOSC
Power
Pin for external decoupling of XOSC supply
regulator
30
XOSC_Q1
Analog
Crystal oscillator pin 1 (must be grounded if a
TCXO or other external clock connected to
EXT_XOSC is used)
31
XOSC_Q2
Analog
Crystal oscillator pin 2 (must be left floating if a
TCXO or other external clock connected to
EXT_XOSC is used)
32
EXT_XOSC
Digital input
Pin for external clock input (must be grounded if a
regular crystal connected to XOSC_Q1 and
XOSC_Q2 is used)
–
GND
Ground pad
The ground pad must be connected to a solid
ground plane.
6
Not connected
Analog
Single-ended TX output (requires DC path to VDD)
Not connected
Terminal Configuration and Functions
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SWRS116F – AUGUST 2011 – REVISED OCTOBER 2014
4 Specifications
All measurements performed on CC1120EM_868_915
CC1120EM_420_470 rev.1.0.1, or CC1120EM_169 rev.1.2.
PARAMETER
MIN
Supply voltage (VDD, AVDD_x)
Voltage on any digital pin
Voltage on analog pins
(including DCPL pins)
(2)
rev.1.2.1,
MAX
UNIT
CONDITION
–0.3
3.9
V
All supply pins must have the same voltage
–0.3
VDD+0.3
V
max 3.9
–0.3
2.0
V
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under general characteristics is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values are with respect to VSS, unless otherwise noted.
4.2
Handling Ratings
Tstg
Storage temperature range
VESD
Electrostatic
discharge (ESD)
performance:
(1)
(2)
CC1120EM_955
Absolute Maximum Ratings (1) (2)
4.1
(1)
rev.1.0.1,
Human body model (HBM), per ANSI/ESDA/JEDEC JS001 (1)
Charged device model (CDM), per JESD22-C101 (2)
All pins
MIN
MAX
–40
125
°C
–2
2
kV
–500
500
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V HBM allows safe manufacturing with a standard ESD control process.
4.3
Recommended Operating Conditions (General Characteristics)
PARAMETER
MIN
Voltage supply range
MAX
UNIT
2.0
3.6
V
0
VDD
V
–40
85
°C
Voltage on digital inputs
Temperature range
4.4
TYP
CONDITION
All supply pins must have the same voltage
Ambient
Thermal Resistance Characteristics for RHB Package
°C/W (1)
AIR FLOW (m/s) (2)
RθJC
Junction-to-case (top)
21.1
0.00
RθJB
Junction-to-board
5.3
0.00
RθJA
Junction-to-free air
31.3
0.00
PsiJT
Junction-to-package top
0.2
0.00
PsiJB
Junction-to-board
5.3
0.00
RθJC
Junction-to-case (bottom)
0.8
0.00
(1)
(2)
UNIT
These values are based on a JEDEC-defined 2S2P system (with the exception of the Theta JC [RΘJC] value, which is based on a
JEDEC-defined 1S0P system) and will change based on environment as well as application. For more information, see these
EIA/JEDEC standards:
• JESD51-2, Integrated Circuits Thermal Test Method Environmental Conditions - Natural Convection (Still Air)
• JESD51-3, Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages
• JESD51-7, High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages
• JESD51-9, Test Boards for Area Array Surface Mount Package Thermal Measurements
Power dissipation of 40 mW and an ambient temperature of 25ºC is assumed.
m/s = meters per second
Specifications
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SWRS116F – AUGUST 2011 – REVISED OCTOBER 2014
4.5
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RF Characteristics
PARAMETER
MIN
MAX
UNIT
820
TYP
960
MHz
410
480
MHz
(273.3)
(320)
MHz
Frequency bands
Data rate step size
8
For more information, see
SWRA398, Using the
CC112x/CC1175 at 274 to
320 MHz.
164
192
MHz
(205)
(240)
MHz
(136.7)
(160)
MHz
Contact TI for more
information about the use
of these frequency bands.
30
Hz
In 820– to 960–MHz band
15
Hz
In 410– to 480–MHz band
6
Hz
In 164– to 192–MHz band
Frequency resolution
Data rate
CONDITION
0
200
kbps
Packet mode
0
100
kbps
Transparent mode
1e-4
Specifications
bps
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4.6
SWRS116F – AUGUST 2011 – REVISED OCTOBER 2014
Regulatory Standards
PERFORMANCE MODE
FREQUENCY BAND
SUITABLE FOR COMPLIANCE
WITH
COMMENTS
ARIB T-108
ARIB T-96
ETSI EN 300 220
Performance also suitable for
systems targeting maximum
allowed output power in the
respective bands, using a range
extender such as the CC1190
device
ETSI EN 54-25
820–960 MHz
FCC Part 101
FCC Part 24 Submask D
FCC Part 15.247
FCC Part 15.249
FCC Part 90 Mask G
High-performance mode
FCC Part 90 Mask J
ARIB T-67
Performance also suitable for
systems targeting maximum
allowed output power in the
respective bands, using a range
extender
ARIB RCR STD-30
410–480 MHz
ETSI EN 300 220
FCC Part 90 Mask D
FCC Part 90 Mask G
ETSI EN 300 220
Performance also suitable for
systems targeting maximum
allowed output power in the
respective bands, using a range
extender
FCC Part 90 Mask D
164–192 MHz
ETSI EN 300 220
820–960 MHz
FCC Part 15.247
410–480 MHz
ETSI EN 300 220
164–192 MHz
ETSI EN 300 220
Low-power mode
4.7
FCC Part 15.249
Current Consumption, Static Modes
TA = 25°C, VDD = 3.0 V if nothing else is stated
PARAMETER
Power down with retention
MIN
TYP
MAX
UNIT
0.12
1
µA
CONDITION
0.5
µA
Low-power RC oscillator
running
XOFF mode
170
µA
Crystal oscillator / TCXO
disabled
IDLE mode
1.3
mA
Clock running, system
waiting with no radio activity
Specifications
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SWRS116F – AUGUST 2011 – REVISED OCTOBER 2014
4.8
4.8.1
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Current Consumption, Transmit Modes
950-MHz Band (High-Performance Mode)
TA = 25°C, VDD = 3.0 V if nothing else is stated
PARAMETER
MIN
TYP
MAX
UNIT
TX current consumption +10 dBm
37
mA
TX current consumption 0 dBm
26
mA
4.8.2
CONDITION
868-, 915-, and 920-MHz Bands (High-Performance Mode)
TA = 25°C, VDD = 3.0 V if nothing else is stated
PARAMETER
MIN
TYP
MAX
UNIT
TX current consumption +14 dBm
45
mA
TX current consumption +10 dBm
34
mA
4.8.3
CONDITION
434-MHz Band (High-Performance Mode)
TA = 25°C, VDD = 3.0 V if nothing else is stated
PARAMETER
MIN
TYP
MAX
UNIT
TX current consumption +15 dBm
50
mA
TX current consumption +14 dBm
45
mA
TX current consumption +10 dBm
34
mA
4.8.4
CONDITION
169-MHz Band (High-Performance Mode)
TA = 25°C, VDD = 3.0 V if nothing else is stated
PARAMETER
MIN
TYP
MAX
UNIT
TX current consumption +15 dBm
54
mA
TX current consumption +14 dBm
49
mA
TX current consumption +10 dBm
41
mA
4.8.5
CONDITION
Low-Power Mode
TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else is stated
PARAMETER
TX current consumption +10 dBm
10
MIN
TYP
MAX
32
Specifications
UNIT
CONDITION
mA
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4.9
SWRS116F – AUGUST 2011 – REVISED OCTOBER 2014
Transmit Parameters
TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else is stated
PARAMETER
MIN
UNIT
CONDITION
+12
dBm
At 950 MHz
+14
dBm
At 915 and 920 MHz
+15
dBm
At 915 and 920 MHz with VDD = 3.6 V
+15
dBm
At 868 MHz
+16
dBm
At 868 MHz with VDD = 3.6 V
+15
dBm
At 433 MHz
+16
dBm
At 433 MHz with VDD = 3.6 V
+15
dBm
At 169 MHz
+16
dBm
At 169 MHz with VDD = 3.6 V
–11
dBm
Within fine step size range
–40
dBm
Within coarse step size range
0.4
dB
Within fine step size range
–75
dBc
4-GFSK 9.6 kbps in 12.5-kHz channel,
measured in 100-Hz bandwidth at 434 MHz
(FCC Part 90 Mask D compliant)
–58
dBc
4-GFSK 9.6 kbps in 12.5-kHz channel,
measured in 8.75-kHz bandwidth (ETSI–300
220 compliant)
–61
dBc
2-GFSK 2.4 kbps in 12.5-kHz channel, 1.2kHz deviation
50-ms periods).
Optimum load impedance
868-, 915-, and 920-MHz bands
35 + j35
Ω
433-MHz band
55 + j25
Ω
169-MHz band
80 + j0
Ω
Specifications
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4.10 PLL Parameters
4.10.1 High-Performance Mode
TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else is stated
PARAMETER
MIN
Phase noise in 950-MHz band
Phase noise in 868-, 915-, and 920-MHz
bands
Phase noise in 433-MHz band
Phase noise in 169-MHz band
TYP
MAX
UNIT
CONDITION
–99
dBc/Hz ± 10 kHz offset
–99
dBc/Hz ± 100 kHz offset
–123
dBc/Hz ± 1 MHz offset
–99
dBc/Hz ± 10 kHz offset
–100
dBc/Hz ± 100 kHz offset
–122
dBc/Hz ± 1 MHz offset
–106
dBc/Hz ± 10 kHz offset
–107
dBc/Hz ± 100 kHz offset
–127
dBc/Hz ± 1 MHz offset
–111
dBc/Hz ± 10 kHz offset
–116
dBc/Hz ± 100 kHz offset
–135
dBc/Hz ± 1 MHz offset
4.10.2 Low-Power Mode
TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else is stated
PARAMETER
Phase noise in 950-MHz band
Phase noise in 868- and 915-MHz bands
Phase noise in 433-MHz band
Phase noise in 169-MHz band
12
MIN
TYP
MAX
UNIT
CONDITION
–90
dBc/Hz ± 10 kHz offset
–92
dBc/Hz ± 100 kHz offset
–124
dBc/Hz ± 1 MHz offset
–95
dBc/Hz ± 10 kHz offset
–95
dBc/Hz ± 100 kHz offset
–124
dBc/Hz ± 1 MHz offset
–98
dBc/Hz ± 10 kHz offset
–102
dBc/Hz ± 100 kHz offset
–129
dBc/Hz ± 1 MHz offset
–106
dBc/Hz ± 10 kHz offset
–110
dBc/Hz ± 100 kHz offset
–136
dBc/Hz ± 1 MHz offset
Specifications
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4.11 Wake-up and Timing
TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else is stated
PARAMETER
MIN
TYP
Powerdown to IDLE
IDLE to TX
MAX
UNIT
ms
Depends on crystal
166
µs
Calibration disabled
461
µs
Calibration enabled
296
µs
Calibrate when leaving TX
enabled
0
µs
Calibrate when leaving TX
disabled
391
µs
When using SCAL strobe
TX to IDLE time
Frequency synthesizer calibration
CONDITION
0.4
4.12 High-Speed Crystal Oscillator
TA = 25°C, VDD = 3.0 V if nothing else is stated
PARAMETER
MIN
Crystal frequency
TYP
MAX
32
44
Load capacitance (CL)
UNIT
CONDITION
MHz
It is expected that there will be an
increase in spurious emissions
when the RF channel is close to
multiples of XOSC in TX. We
recommend that the level of
spurious emissions be evaluated
if the RF channel is closer than 1
MHz to multiples of XOSC in TX.
10
pF
ESR
60
Start-up time
0.4
Ω
Simulated over operating
conditions
ms
Depends on crystal
4.13 High-Speed Clock Input (TCXO)
TA = 25°C, VDD = 3.0 V if nothing else is stated
PARAMETER
MIN
MAX
UNIT
32
44
MHz
High input voltage
1.4
VDD
V
Low input voltage
0
0.6
V
2
ns
Clock frequency
TYP
CONDITION
TCXO with CMOS output
Rise / Fall time
TCXO with CMOS output directly
coupled to pin EXT_OSC
Clipped sine output
0.8
Clock input amplitude (peak-to-peak)
1.5
TCXO clipped sine output connected
to pin EXT_OSC through series
capacitor
V
4.14 32-kHz Clock Input
TA = 25°C, VDD = 3.0 V if nothing else is stated
PARAMETER
MIN
Clock frequency
32 kHz clock input pin input high voltage
TYP
MAX
32
CONDITION
kHz
0.8×VDD
32 kHz clock input pin input low voltage
UNIT
V
0.2×VDD
V
Specifications
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4.15 Low-Speed RC Oscillator
TA = 25°C, VDD = 3.0 V if nothing else is stated
PARAMETER
MIN
TYP
MAX
UNIT
Frequency
32/40
kHz
Frequency accuracy after calibration
±0.1
%
Initial calibration time
1.6
ms
CONDITION
After calibration (calibrated against
the high-speed XOSC)
Relative to frequency reference
(for example, 32-MHz crystal or
TCXO)
4.16 I/O and Reset
TA = 25°C, VDD = 3.0 V if nothing else is stated
PARAMETER
Logic input high voltage
MIN
TYP
0.2×VDD
0.8×VDD
CONDITION
V
V
Logic output low voltage
0.2×VDD
Power-on reset threshold
UNIT
V
Logic input low voltage
Logic output high voltage
MAX
0.8×VDD
1.3
V
V
At 4-mA output load or less
Voltage on DVDD pin
4.17 Temperature Sensor
TA = 25°C, VDD = 3.0 V if nothing else is stated
PARAMETER
MIN
Temperature sensor range
–40
TYP
MAX
UNIT
85
°C
CONDITION
Temperature coefficient
2.66
mV / °C
Change in sensor output voltage
versus change in temperature
Typical output voltage
794
mV
Typical sensor output voltage at
TA = 25°C, VDD = 3.0 V
VDD coefficient
1.17
mV / V
Change in sensor output voltage
versus change in VDD
The CC1175 device can be configured to provide a voltage proportional to temperature on GPIO1. The
temperature can be estimated by measuring this voltage (see Section 4.17). For more information, see the
temperature sensor design note (SWRA415).
14
Specifications
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4.18 Typical Characteristics
TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else is stated.
All measurements performed on CC1120EM_868_915 rev.1.0.1, CC1120EM_955 rev.1.2.1, CC1120EM_420_470 rev.1.0.1
or CC1120EM_169 rev.1.2 (fxosc = 32 MHz), and CC1125EM_868_915 rev.1.1.0, CC1125EM_420_470 rev.1.1.0,
CC1125EM_169 rev.1.1.0, CC1125EM-Cat1-868 (fxosc = 40 MHz).
Figure 4-6 was measured at the 50-Ω antenna connector.
Output Power (dBm)
17
16.5
16
15.5
15
-40
40
80
Temperature (ºC)
Figure 4-2. Output Power vs Temperature
Max Setting, 170 MHz, 3.6 V
Figure 4-1. Phase Noise in 868-MHz Band
18
20
16
10
Output Power (dBm)
14
12
10
8
0
-10
-20
-30
-40
Supply Voltage (V)
Figure 4-3. Output Power vs Voltage
Max Setting, 170 MHz
47
43
4B
53
4F
57
5B
63
5F
3.5
67
3
6B
2.5
73
6F
2
77
-50
6
7F
7B
Output Power (dBm)
0
PA power setting
Figure 4-4. Output Power
vs PA Power Setting
60
TX Current (mA)
50
40
30
20
10
43
47
4B
53
4F
57
5B
63
5F
67
6B
73
6F
77
7B
7F
0
PA power setting
Figure 4-5. TX Current at 868 MHz
vs PA Power Setting
Figure 4-6. Output Power vs Load Impedance (+14-dBm Setting)
Specifications
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Typical Characteristics (continued)
1.2 kbps, 2-FSK, DEV = 4 kHz
Figure 4-8. Eye Diagram
1400
GPIO Output High Voltage (V)
GPIO Output Low Voltage (mV)
200 kbps, DEV = 83 kHz (Outer Symbols), 4GFSK
Figure 4-7. Eye Diagram
1200
1000
800
600
400
200
0
3.1
2.9
2.7
2.5
2.3
2.1
1.9
1.7
1.5
0
5
10
15
20
25
30
35
0
Current (mA)
5
10
15
20
25
30
35
Current (mA)
Figure 4-9. GPIO Output Low Voltage vs Current Being Sinked
Figure 4-10. GPIO Output High Voltage vs Current Being Sourced
9.6 kbps in 12.5-kHz Channel
Figure 4-11. FCC Part 90 Mask D
16
Specifications
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5 Detailed Description
5.1
Block Diagram
Figure 5-1 shows the system block diagram of the CC1175 device.
CC1175
Power on reset
MARC
Main Radio Control Unit
Ultra low power 16 bit
MCU
4k byte
ROM
SPI
Serial configuration
and data interface
CSn (chip select)
SI (serial input)
Interrupt and
IO handler
System bus
SO (serial output)
SCLK (serial clock)
Battery sensor /
temp sensor
Configuration and
status registers
128 byte
TX FIFO RAM
buffer
Packet handler
and FIFO control
(optional GPIO0-3)
RF and DSP frontend
Output power ramping and OOK / ASK modulation
14dBm high
efficiency PA
Fully integrated Fractional-N
Frequency Synthesizer
Modulator
PA
(optional autodetected
external XOSC / TCXO)
XOSC_Q1
Data interface with
signal chain access
XOSC
XOSC_Q2
Figure 5-1. System Block Diagram
5.2
Frequency Synthesizer
At the center of the CC1175 device there is a fully integrated, fractional-N, ultra-high-performance
frequency synthesizer. The frequency synthesizer is designed for excellent phase noise performance. The
system is designed to comply with the most stringent regulatory spectral masks at maximum transmit
power.
Either a crystal can be connected to XOSC_Q1 and XOSC_Q2, or a TCXO can be connected to the
EXT_XOSC input. The oscillator generates the reference frequency for the synthesizer, as well as clocks
for the digital part. If a TCXO is used, the CC1175 device automatically turns on and off the TCXO when
needed to support low-power modes.
Detailed Description
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5.3
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Transmitter
The CC1175 transmitter is based on direct synthesis of the RF frequency (in-loop modulation). To achieve
effective spectrum usage, the CC1175 device has extensive data filtering and shaping in TX mode to
support high throughput data communication in narrowband channels. The modulator also controls power
ramping to remove issues such as spectral splattering when driving external high-power RF amplifiers.
The modulator also controls the PA power level to support on/off keying (OOK) and amplitude shift keying
(ASK).
5.4
Radio Control and User Interface
The CC1175 digital control system is built around the main radio control (MARC), which is implemented
using an internal high-performance, 16-bit ultra-low-power processor. MARC handles power modes, radio
sequencing, and protocol timing.
A 4-wire SPI serial interface is used for configuration and data buffer access. The digital baseband
includes support for channel configuration, packet handling, and data buffering. The host MCU can stay in
power-down mode until a valid RF packet is received. This greatly reduces power consumption. When the
host MCU receives a valid RF packet, it burst-reads the data. This reduces the required computing power.
The CC1175 radio control and user interface are based on the widely used CC1101 transceiver. This
relationship enables an easy transition between the two platforms. The command strobes and the main
radio states are the same for the two platforms.
For legacy formats, the CC1175 device also supports two serial modes.
• Synchronous serial mode: The CC1175 device provides the MCU with a bit clock for sampling input
data.
• Transparent mode: The CC1175 device samples the input pin at a configurable rate.
5.5
Low-Power and High-Performance Modes
The CC1175 device is highly configurable, enabling trade-offs between power and performance to be
made based on the needs of the application. This data sheet describes two modes, low-power mode and
high-performance mode, which represent configurations where the device is optimized for either power or
performance.
18
Detailed Description
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6 Typical Application Circuit
NOTE
This section is intended only as an introduction.
Very few external components are required for the operation of the CC1175 device. Figure 6-1 shows a
typical application circuit. The board layout will greatly influence the RF performance of the CC1175
device. Figure 6-1 does not show decoupling capacitors for power pins.
Optional
vdd
25
AVDD_PFD_CHP
vdd
DCPL_PFD_CHP 26
vdd
AVDD_SYNTH2 27
1 VDD_GUARD
AVDD_XOSC 28
LPF0 23
2 RESET_N
vdd
LPF1 24
3 GPIO3
AVDD_SYNTH1 22
4 GPIO2
DCPL_VCO 21
CC1175
5 DVDD
vdd
GND0 20
6 DCPL
GND1 19
N.C. 18
7 SI
PA 17
N.C.
16
AVDD_RF
15
vdd
13 AVDD_IF
vdd
14 RBIAS
12 DVDD
vdd
CSn
11
10 GPIO0
9 SO (GPIO1)
8 SCLK
vdd
vdd
DCPL_XOSC 29
(optional control pin
from CC1175)
XOSC_Q1 30
EXT_XOSC 32
XOSC/
TCXO
XOSC_Q2 31
32 MHz
crystal
MCU connection
SPI interface and
optional gpio pins
Figure 6-1. Typical Application Circuit
For more information, see the reference designs available for the CC1175 device in Section 7.2,
Documentation Support.
Typical Application Circuit
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7 Device and Documentation Support
7.1
Device Support
7.1.1
Development Support
7.1.1.1
Configuration Software
The CC1175 device can be configured using the SmartRF Studio software (SWRC046). The SmartRF™
Studio software is highly recommended for obtaining optimum register settings, and for evaluating
performance and functionality.
7.1.2
Device and Development-Support Tool Nomenclature
To designate the stages in the product development cycle, TI assigns prefixes to the part numbers of all
microprocessors (MPUs) and support tools. Each device has one of three prefixes: X, P, or null (no prefix)
(for example, CC1175). Texas Instruments recommends two of three possible prefix designators for its
support tools: TMDX and TMDS. These prefixes represent evolutionary stages of product development
from engineering prototypes (TMDX) through fully qualified production devices and tools (TMDS).
Device development evolutionary flow:
X
Experimental device that is not necessarily representative of the final device's electrical
specifications and may not use production assembly flow.
P
Prototype device that is not necessarily the final silicon die and may not necessarily meet
final electrical specifications.
null
Production version of the silicon die that is fully qualified.
Support tool development evolutionary flow:
TMDX
Development-support product that has not yet completed Texas Instruments internal
qualification testing.
TMDS
Fully qualified development-support product.
X and P devices and TMDX development-support tools are shipped against the following disclaimer:
"Developmental product is intended for internal evaluation purposes."
Production devices and TMDS development-support tools have been characterized fully, and the quality
and reliability of the device have been demonstrated fully. TI's standard warranty applies.
Predictions show that prototype devices (X or P) have a greater failure rate than the standard production
devices. Texas Instruments recommends that these devices not be used in any production system
because their expected end-use failure rate still is undefined. Only qualified production devices are to be
used.
TI device nomenclature also includes a suffix with the device family name. This suffix indicates the
package type (for example, RHB) and the temperature range (for example, blank is the default commercial
temperature range) provides a legend for reading the complete device name for any CC1175 device.
For orderable part numbers of CC1175 devices in the QFN package types, see the Package Option
Addendum of this document, the TI website (www.ti.com), or contact your TI sales representative.
20
Device and Documentation Support
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7.2
SWRS116F – AUGUST 2011 – REVISED OCTOBER 2014
Documentation Support
The following document supplements the CC1175 processor. Copies of these documents are available on
the Internet at www.ti.com. Tip: Enter the literature number in the search box provided at www.ti.com.
SWRR093
7.3
CC1175EM 868- to 915-MHz Reference Design
Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the
respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views;
see TI's Terms of Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster
collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge,
explore ideas and help solve problems with fellow engineers.
TI Embedded Processors Wiki Texas Instruments Embedded Processors Wiki. Established to help
developers get started with Embedded Processors from Texas Instruments and to foster
innovation and growth of general knowledge about the hardware and software surrounding
these devices.
7.4
Trademarks
SmartRF, E2E are trademarks of Texas Instruments.
7.5
Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
7.6
Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
Device and Documentation Support
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8 Mechanical Packaging and Orderable Information
The following pages include mechanical packaging and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and
revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
22
Mechanical Packaging and Orderable Information
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PACKAGE OPTION ADDENDUM
www.ti.com
11-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
CC1175RHBR
ACTIVE
VQFN
RHB
32
3000
RoHS & Green NIPDAU | NIPDAUAG
Level-3-260C-168 HR
-40 to 85
CC1175
CC1175RHBT
ACTIVE
VQFN
RHB
32
250
RoHS & Green NIPDAU | NIPDAUAG
Level-3-260C-168 HR
-40 to 85
CC1175
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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