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CC2564C
SWRS199B – APRIL 2016 – REVISED JUNE 2020
CC2564C Dual-Mode Bluetooth® Controller
1 Device Overview
1.1
Features
1
• TI's Single-Chip Bluetooth® Solution With
Bluetooth Basic Rate (BR), Enhanced Data Rate
(EDR), and Low Energy (LE) Support
• Bluetooth 5.1 Delaration ID D049226
• Highly Optimized for Size-Constrained and LowCost Designs:
– Single-Ended 50-Ω RF Interface
– VQFNP-MR Package Family, RVM Footprint: 76
Terminals, 0.6-mm Pitch, 8-mm × 8-mm
• BR and EDR Features Include:
– Up to Seven Active Devices
– Scatternet: Up to Three Piconets
Simultaneously, One as Master and Two as
Slaves
– Up to Two Synchronous Connection Oriented
(SCO) Links on the Same Piconet
– Support for All Voice Air-Coding—Continuously
Variable Slope Delta (CVSD), A-Law, µ-Law,
Modified Subband Coding (mSBC), and
Transparent (Uncoded)
– Provide an Assisted Mode for HFP 1.6
Wideband Speech (WBS) Profile or A2DP
Profile to Reduce Host Processing and Power
– Support of Multiple Bluetooth Profiles With
Enhanced QoS
• Low Energy Features Include:
– Multiple Sniff Instances Tightly Coupled to
Achieve Minimum Power Consumption
– Independent Buffering for Low Energy Allows
Large Numbers of Multiple Connections Without
Affecting BR or EDR Performance
– Built-In Coexistence and Prioritization Handling
for BR, EDR, and Low Energy
– Capabilities of Link Layer Topology
Scatternet—Can Act Concurrently as Peripheral
and Central
1.2
•
•
•
•
•
•
•
•
•
– Network Support for up to 10 Devices
– Time Line Optimization Algorithms to Achieve
Maximum Channel Utliization
Best-in-Class Bluetooth (RF) Performance (TX
Power, RX Sensitivity, Blocking)
– Class 1 TX Power up to +12 dBm
– Internal Temperature Detection and
Compensation to Ensure Minimal Variation in
RF Performance Over Temperature, No
External Calibration Required
– Improved Adaptive Frequency Hopping (AFH)
Algorithm With Minimum Adaptation Time
– Longer Range, Including Twice the Range of
Other Low-Energy-Only Solutions
Advanced Power Management for Extended
Battery Life and Ease of Design
– On-Chip Power Management, Including Direct
Connection to Battery
– Low Power Consumption for Active, Standby,
and Scan Bluetooth Modes
– Shutdown and Sleep Modes to Minimize Power
Consumption
Physical Interfaces:
– UART Interface With Support for Maximum
Bluetooth Data Rates
– UART Transport Layer (H4) With Maximum
Rate of 4 Mbps
– Three-Wire UART Transport Layer (H5) With
Maximum Rate of 4 Mbps
– Fully Programmable Digital Pulse-Code
Modulation (PCM)–I2S Codec Interface
Flexibility for Easy Stack Integration and Validation
Into MCUs and MPUs
HCI Tester Tool to Evaluate RF Performance of
the Device and Configure Service Pack
Applications
Wireless Audio Solutions
mPOS
Medical Devices
Set-Top Boxes (STBs)
•
•
Wearable Devices
Sensor Hub, Sensor Gateway
– Home and Factory Automation
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
CC2564C
SWRS199B – APRIL 2016 – REVISED JUNE 2020
1.3
www.ti.com
Description
The CC2564C device from Texas Instruments™ is a complete Bluetooth® BR/EDR, and low energy HCI
level solution, providing high performance and robust Bluetooth solution. Based on TI’s seventhgeneration Bluetooth core, the CC2564C device provides a product-proven solution that is Bluetooth 5.1compliant, adding LE security and enhancing support for complex topologies (dual mode and link layer
topologies). This HCI device offers best-in-class RF performance with about twice the throughput of other
Bluetooth low-energy solutions, and includes a royalty-free software stack compatible with several host
MCUs and MPUs, for a complete Bluetooth solution. Furthermore, TI’s power-management hardware and
software algorithms provide significant power savings in all commonly used Bluetooth BR, EDR, and low
energy modes of operation.
The TI dual-mode Bluetooth stack software is certified and provided royalty free for MCUs and MPUs. The
iPod® (MFi) protocol is supported by add-on software packages. For more information, see TI Dual-Mode
Bluetooth Stack. Multiple profiles and sample applications, including the following, are supported:
Serial port profile (SPP)
Advanced audio distribution profile (A2DP)
Audio/video remote control profile (AVRCP)
Hands-free profile (HFP)
Human interface device (HID)
Generic attribute profile (GATT)
Several Bluetooth low energy profiles and services
Device Information (1)
PART NUMBER
PACKAGE
BODY SIZE
RVM (76)
8.00 mm × 8.00 mm × 0.60 mm
CC2564CRVM
(1)
For more information on these devices, see Mechanical, Packaging, and Orderable Information.
1.4
Functional Block Diagram
CC2564C
2.4-GHz
band-pass filter
Coprocessor
(See Note)
PCM-I2S
Modem
arbitrator
I/O
interface
DRP
BR/EDR
main processor
UART
HCI
Power
management
Power
Note:
2
Shutdown
Clock
management
Slow
clock
Fast
clock
Copyright © 2016, Texas Instruments Incorporated
The following technologies and assisted modes cannot be used simultaneously with the coprocessor: Bluetooth low
energy, assisted HFP 1.6 (WBS), and assisted A2DP. Only one technology or assisted mode can be used at a time.
Device Overview
Copyright © 2016–2020, Texas Instruments Incorporated
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CC2564C
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SWRS199B – APRIL 2016 – REVISED JUNE 2020
Table of Contents
Device Overview ......................................... 1
6.2
Functional Block Diagram ........................... 24
1.1
Features .............................................. 1
6.3
Clock Inputs ......................................... 24
1.2
Applications ........................................... 1
6.4
Functional Blocks.................................... 28
1.3
Description ............................................ 2
6.5
Bluetooth BR and EDR Features
1.4
Functional Block Diagram ............................ 2
6.6
Bluetooth Low Energy Description .................. 41
2
3
Revision History ......................................... 3
Device Comparison ..................................... 4
6.7
6.8
Bluetooth Transport Layers ......................... 42
Changes from the CC2564B Device to the
CC2564C Device .................................... 42
4
Terminal Configuration and Functions
1
3.1
5
............. 5
4.1
VQFNP-MR Package ................................. 5
Specifications ............................................ 9
5.1
Absolute Maximum Ratings .......................... 9
5.2
ESD Ratings .......................................... 9
5.3
Power-On Hours ...................................... 9
5.4
Recommended Operating Conditions ............... 10
5.5
Power Consumption Summary ...................... 10
5.6
Electrical Characteristics ............................ 12
7
8
7.1
Reference Design Schematics and BOM ........... 43
7.2
VQFNP-MR PCB Layout Guidelines ................ 46
Device and Documentation Support ............... 49
Third-Party Products Disclaimer
49
8.2
Tools and Software
49
8.3
8.4
8.5
5.8
Timing and Switching Characteristics ............... 13
8.8
5.9
RF Performance ..................................... 20
8.9
6.1
Overview
............................................
24
8.7
9
....................
.................................
Device Nomenclature ...............................
Documentation Support .............................
Support Resources ..................................
Trademarks..........................................
Electrostatic Discharge Caution .....................
Export Control Notice ...............................
Glossary .............................................
8.1
Thermal Resistance Characteristics for VQFNP-MR
(RVM) Package .................................... 12
Detailed Description ................................... 24
41
Applications, Implementation, and Layout........ 43
8.6
5.7
6
Related Products ..................................... 4
...................
50
51
52
52
52
52
52
Mechanical, Packaging, and Orderable
Information .............................................. 52
2 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from November 3, 2016 to June 22, 2020
•
•
•
•
•
•
•
•
•
•
•
•
•
Page
Changed Bluetooth 4.2 to Bluetooth 5.1 in Section 1.1, Features ............................................................ 1
Changed the Features bullet about the HCI Tester Tool ....................................................................... 1
Changed Bluetooth 4.2 to Bluetooth 5.1 in Section 1.3, Description .......................................................... 2
Changed "twice the range" to "twice the throughput" in Description ........................................................... 2
Changed Bluetooth 4.2 to Bluetooth 5.1 in Table 3-1, CC2564C Device Features ......................................... 4
Added footnote to Current Consumption for Different Bluetooth BR and EDR Scenarios ................................ 11
Added footnote to Current Consumption for Different Low-Energy Scenarios .............................................. 11
Changed Bluetooth 4.2 to Bluetooth 5.1 in Section 6.5, Bluetooth BR and EDR Features ............................... 41
Changed Bluetooth 4.2 to Bluetooth 5.1 in Section 6.6, Bluetooth Low Energy Description.............................. 41
Changed Reference Design Schematics and BOM ............................................................................ 43
Changed entries in the Device and Documentation Support section......................................................... 49
Changed the link to the HCI Tester Tool ........................................................................................ 49
Changed CC2564C Device Nomenclature image .............................................................................. 50
Revision History
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3
CC2564C
SWRS199B – APRIL 2016 – REVISED JUNE 2020
www.ti.com
3 Device Comparison
Table 3-1 lists the features of the CC2564C device.
Table 3-1. CC2564C Device Features
TECHNOLOGY SUPPORTED
DEVICE
CC2564C
(1)
3.1
DESCRIPTION
Bluetooth 5.1 + Bluetooth low energy
ASSISTED MODES
SUPPORTED (1)
BR, EDR
LOW
ENERGY
HFP 1.6
(WBS)
A2DP
✓
✓
✓
✓
The assisted modes (HFP 1.6 and A2DP) are not supported simultaneously. Furthermore, the assisted modes are not supported
simultaneously with Bluetooth low energy.
Related Products
Wireless Connectivity The wireless connectivity portfolio offers a wide selection of low-power RF
solutions suitable for a broad range of application. The offerings range from fully customized
solutions to turnkey offerings with precertified hardware and software (protocol).
Companion Products Review products that are frequently purchased or used with the CC2564C product.
Reference Designs for CC2564 The TI Designs Reference Design Library is a robust reference design
library spanning analog, embedded processor, and connectivity. Created by TI experts to
help you jump-start your system design, all TI Designs include schematic or block diagrams,
BOMs and design files to speed your time to market. Search and download designs at
ti.com/tidesigns.
4
Device Comparison
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SWRS199B – APRIL 2016 – REVISED JUNE 2020
4 Terminal Configuration and Functions
4.1
4.1.1
VQFNP-MR Package
Pin Diagram
NC
DIG_LDO_OUT
A40
DIG_LDO_OUT
B36
AUD_IN
NC
A39
B35
B33
B34
A38
VDD_IO
AUD_OUT
A37
NC
AUD_CLK
NC
AUD_FSYNC
A35
B32
A36
VDD_IO
NC
B30
B31
NC
A34
NC
HCI_TX
A33
A32
B22
B6
DIG_LDO_OUT
MLDO_OUT
VSS_FREF
B19
B9
A22
B10
MLDO_OUT
NC
NC
A11
A10
NC
NC
A12
VSS_DCO
DCO_LDO_OUT
A13
NC
NC
NC
B11
B12
A14
A15
NC
NC
B13
B14
A16
NC
DIG_LDO_OUT
NC
A17
VDD_IO
B15
B16
A18
NC
NC
A19
A20
NC
VDD_IO
ADC_PPA_LDO_OUT
BT_RF
A9
A21
CL1.5_LDO_OUT
MLDO_OUT
A8
B8
nSHUTD
CL1.5_LDO_IN
B7
B20
MLDO_OUT
MLDO_IN
A7
A23
XTALM/FREFM
XTALP/FREFP
A6
B21
VDD_IO
NC
B5
B17
NC
B23
A24
NC
A3
A5
NC
NC
DIG_LDO_OUT
B4
A25
VDD_IO
A2
A4
A26
NC
SRAM_LDO_OUT
B3
B24
VDD_IO
VSS
B29
B25
NC
SLOW_CLK
B2
A27
TX_DBG
HCI_RX
B26
A28
VDD_IO
NC
B1
A29
DIG_LDO_OUT
VSS
A1
B27
NC
HCI_CTS
B28
A30
B18
NC
DIG_LDO_OUT
HCI_RTS
NC
A31
NC
Figure 4-1 shows the bottom view of the pin diagram (VQFNP-MR package).
SWRS121-002
Figure 4-1. VQFNP-MR Package Pin Diagram
Bottom View
Terminal Configuration and Functions
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CC2564C
SWRS199B – APRIL 2016 – REVISED JUNE 2020
4.1.2
www.ti.com
Pin Attributes
Table 4-1 describes the pin attributes for the VQFNP-MR package.
SPACER
Table 4-1. Pin Attributes (VQFNP-MR Package)
NO.
PULL AT
RESET
DEF.
DIR. (1)
I/O
Type (2)
AUD_CLK
B32
PD
I/O
HY,
4 mA
PCM clock
Fail-safe
AUD_FSYNC
A35
PD
I/O
4 mA
PCM frame-sync signal
Fail-safe
AUD_IN
B34
PD
I
4 mA
PCM data input
Fail-safe
AUD_OUT
B33
PD
O
4 mA
PCM data output
Fail-safe
HCI_CTS
A29
PU
I
8 mA
HCI UART clear-to-send
The device is allowed to send data
when HCI_CTS is low.
HCI_RX
A26
PU
I
8 mA
HCI universal asynchronous
receiver/transmitter (UART) data
receive
HCI_RTS
A32
PU
O
8 mA
HCI UART request-to-send
The host is allowed to send data when
HCI_RTS is low.
HCI_TX
A33
PU
O
8 mA
HCI UART data transmit
TX_DBG
B24
PU
O
2 mA
TI internal debug messages. TI
recommends leaving an internal test
point.
NAME
DESCRIPTION
I/O Signals
Clock Signals
SLOW_CLK
A25
I
32.768-kHz clock in
Fail-safe
XTALP/FREFP
B4
I
Fast clock in analog (sine wave)
Output terminal of fast-clock crystal
Fail-safe
XTALM/FREFM
A4
I
Fast clock in digital (square wave)
Input terminal of fast-clock crystal
Fail-safe
Analog Signals
BT_RF
B8
nSHUTD
A6
I/O
PD
Bluetooth RF I/O
I
Shutdown input (active low)
Power and Ground Signals
ADC_PPA_LDO_OUT
A8
O
ADC/PPA LDO output
CL1.5_LDO_IN
B6
I
Power amplifier (PA) LDO input
Connect directly to battery
CL1.5_LDO_OUT
A7
O
PA LDO output
DCO_LDO_OUT
A12
O
DCO LDO output
DIG_LDO_OUT
A2, A3,
B15,
B26,
B27,
B35, B36
O
Digital LDO output
QFN pin B26 or B27 must be shorted
to other DIG_LDO_OUT pins on the
PCB.
B5
I
Main LDO input
Connect directly to battery
A5, A9,
B2, B7
I/O
Main LDO output (1.8-V nominal)
B1
O
SRAM LDO output
MLDO_IN
MLDO_OUT
SRAM_LDO_OUT
(1)
(2)
6
I = input; O = output; I/O = bidirectional
I/O Type: Digital I/O cells. HY = input hysteresis, current = typical output current
Terminal Configuration and Functions
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SWRS199B – APRIL 2016 – REVISED JUNE 2020
Table 4-1. Pin Attributes (VQFNP-MR Package) (continued)
NAME
NO.
PULL AT
RESET
DEF.
DIR. (1)
I/O
Type (2)
DESCRIPTION
VDD_IO
A17,
A34,
A38,
B18,
B19,
B21,
B22, B25
I
I/O power supply (1.8-V nominal)
VSS
A24, A28
I
Ground
VSS_DCO
B11
I
DCO ground
VSS_FREF
B3
I
Fast clock ground
4.1.3
Connections for Unused Pins
Section 4.1.3 lists the connections for unused signals for the VQFNP-MR package.
SPACER
PIN NUMBER
FUNCTION
DESCRIPTION
A1
NC
Not connected
A10
NC
Not connected
A11
NC
Not connected
A14
NC
Not connected
A18
NC
Not connected
A19
NC
Not connected
A20
NC
Not connected
A21
NC
Not connected
A22
NC
Not connected
A23
NC
Not connected
A27
NC
Not connected
A30
NC
Not connected
A31
NC
Not connected
A40
NC
Not connected
B9
NC
Not connected
B10
NC
Not connected
B16
NC
Not connected
B17
NC
Not connected
B20
NC
Not connected
B23
NC
Not connected
A13
NC
TI internal use
A15
NC
TI internal use
A16
NC
TI internal use
A36
NC
TI internal use
A37
NC
TI internal use
A39
NC
TI internal use
B12
NC
TI internal use
B13
NC
TI internal use
B14
NC
TI internal use
B28
NC
TI internal use
B29
NC
TI internal use
B30
NC
TI internal use
B31
NC
TI internal use
Terminal Configuration and Functions
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CC2564C
SWRS199B – APRIL 2016 – REVISED JUNE 2020
8
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Terminal Configuration and Functions
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CC2564C
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SWRS199B – APRIL 2016 – REVISED JUNE 2020
5 Specifications
Unless otherwise indicated, all measurements are taken at the device pins on the TI test evaluation board
(EVB). All specifications are over process, voltage, and temperature, unless otherwise indicated.
5.1
Absolute Maximum Ratings
Over operating free-air temperature range (unless otherwise indicated). All parameters are measured as follows:
VDD_IN = 3.6 V and VDD_IO = 1.8 V (unless otherwise indicated). (1)
Supply voltage
MIN
MAX
VDD_IN
–0.5
4.8
VDDIO_1.8 V
UNIT
V (2)
–0.5
2.145
V
Input voltage to analog pins (3)
–0.5
2.1
V
Input voltage to all other pins
–0.5
VDD_IO + 0.5
V
Bluetooth RF inputs
10
dBm
Operating ambient temperature, TA (4)
–40
85
°C
Storage temperature, Tstg
–55
125
°C
(1)
(2)
(3)
(4)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Maximum allowed depends on accumulated time at that voltage: VDD_IN is defined in Section 7.1.
Analog pins: BT_RF, XTALP, and XTALM
The reference design supports a temperature range of –20°C to +70°C because of the operating conditions of the crystal.
5.2
ESD Ratings
VALUE
V(ESD)
(1)
(2)
5.3
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±500
Charged device model (CDM), per JEDEC specification JESD22C101 (2)
±250
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
Power-On Hours
This information is provided solely for your convenience and does not extend or modify the warranty provided under TI's
standard terms and conditions for TI semiconductor products.
DEVICE
CC2564C
CONDITIONS
Duty cycle = 25% active and 75% sleep
Tambient = 85ºC
POWER-ON HOURS
15,400 (7 years)
Specifications
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SWRS199B – APRIL 2016 – REVISED JUNE 2020
5.4
www.ti.com
Recommended Operating Conditions
MIN
MAX
1.7
4.8
V
1.62
1.92
V
Default condition
0.65 × VDD_IO
VDD_IO
V
Default condition
0
0.35 × VDD_IO
V
I/O input rise and all times,
10% to 90%—asynchronous mode
1
10
ns
I/O input rise and fall times,
10% to 90%—synchronous mode (PCM)
1
2.5
ns
VDD_IN
Power supply voltage
VDD_IO
I/O power supply voltage
VIH
High-level input voltage
VIL
Low-level input voltage
tr and tf
Maximum ripple on VDD_IN (sine wave) for
1.8 V (DC-DC) mode
Condition: 0 to 0.1 MHz
60
Condition: 0.1 to 0.5 MHz
50
Condition: 0.5 to 2.5 MHz
30
Condition: 2.5 to 3.0 MHz
15
Condition: > 3.0 MHz
Maximum ambient operating temperature
(2)
(1) (2)
mV
85
°C
–40
Power Consumption Summary
5.5.1
Static Current Consumption
OPERATIONAL MODE
Shutdown mode (1)
Deep sleep mode
(2)
Total I/O current consumption in active mode
Continuous transmission—GFSK (3)
Continuous transmission—EDR (4) (5)
10
400
The device can be reliably operated for 7 years at Tambient of 85°C, assuming 25% active mode and 75% sleep mode (15,400
cumulative active power-on hours).
A crystal-based solution is limited by the temperature range required for the crystal to meet 20 ppm.
5.5
(1)
(2)
(3)
(4)
(5)
mVp-p
5
Voltage dips on VDD_IN (VBAT)
Duration = 577 µs to 2.31 ms, period = 4.6 ms
(1)
UNIT
MIN
TYP
MAX
1
7
UNIT
40
105
µA
1
mA
107
mA
112.5
mA
µA
VBAT + VIO + VSHUTDOWN
VBAT + VIO
At maximum output power 12 dBm
At maximum output power 10 dBm
Both π/4 DQPSK and 8DPSK
Specifications
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5.5.2
SWRS199B – APRIL 2016 – REVISED JUNE 2020
Dynamic Current Consumption
5.5.2.1
Current Consumption for Different Bluetooth BR and EDR Scenarios
Conditions: VDD_IN = 3.6 V, 25°C, 26-MHz XTAL, nominal unit, 10-dBm output power (1)
MASTER AND SLAVE
AVERAGE CURRENT
UNIT
SCO link HV3
OPERATIONAL MODE
Master and slave
13.7
mA
Extended SCO (eSCO) link EV3 64 kbps, no retransmission
Master and slave
13.2
mA
eSCO link 2-EV3 64 kbps, no retransmission
Master and slave
10
mA
GFSK full throughput: TX = DH1, RX = DH5
Master and slave
40.5
mA
EDR full throughput: TX = 2-DH1, RX = 2-DH5
Master and slave
41.2
mA
EDR full throughput: TX = 3-DH1, RX = 3-DH5
Master and slave
41.2
mA
Sniff, four attempts, 1.28 seconds
Master and slave
145
µA
Page or inquiry scan 1.28 seconds, 11.25 ms
Master and slave
320
µA
Page (1.28 seconds) and inquiry (2.56 seconds) scans,
11.25 ms
Master and slave
445
µA
A2DP source
Master
13.9
mA
A2DP sink
Master
15.2
mA
Assisted A2DP source
Master
16.9
mA
Assisted A2DP sink
Master
18.1
mA
Assisted WBS EV3; retransmit effort = 2;
maximum latency = 8 ms
Master and slave
17.5 and 18.5
mA
Assisted WBS 2EV3; retransmit effort = 2;
maximum latency = 12 ms
Master and slave
11.9 and 13
mA
(1)
To modify maximum output power, use an HCI VS command.
5.5.2.2
Current Consumption for Different Low-Energy Scenarios
Conditions: VDD_IN = 3.6 V, 25°C, nominal unit, 10-dBm output power (1)
MODE
DESCRIPTION
AVERAGE
CURRENT
UNIT
Advertising, nonconnectable
Advertising in all three channels
1.28-seconds advertising interval
15 bytes advertise data
114
µA
Advertising, discoverable
Advertising in all three channels
1.28-seconds advertising interval
15 bytes advertise data
138
µA
Scanning
Listening to a single frequency per window
1.28-seconds scan interval
11.25-ms scan window
324
µA
Master role
Connected
(1)
Slave role
500-ms connection interval
0-ms slave connection latency
Empty TX and RX LL packets
169
199
µA
To modify maximum output power, use an HCI VS command.
Specifications
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5.6
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Electrical Characteristics
RATING
CONDITION
High-level output voltage, VOH
Low-level output voltage, VOL
I/O input impedance
PCM–I2S bus, TX_DBG
All others
5.7
MAX
0.8 × VDD_IO
VDD_IO
At 0.1 mA
VDD_IO – 0.2
VDD_IO
At 2, 4, 8 mA
0
0.2 × VDD_IO
At 0.1 mA
0
0.2
Resistance
1
Capacitance
Output rise and fall times, 10% to 90% (digital pins)
I/O pull
currents
MIN
At 2, 4, 8 mA
CL = 20 pF
UNIT
V
V
MΩ
5
pF
10
ns
PU
Typical = 6.5
3.5
PD
Typical = 27
9.5
9.7
55
PU
Typical = 100
50
300
PD
Typical = 100
50
360
µA
Thermal Resistance Characteristics for VQFNP-MR (RVM) Package
over operating free-air temperature range (unless otherwise noted)
THERMAL METRICS (1)
C/W (2)
Rθja
Junction-to-free-air
34.6
Rθjctop
Junction-to-case-top
17.9
Rθjcbottom
Junction-to-case-bottom
1.6
Rθjb
Junction-to-board
12.0
φjt
Junction-to-package-top
0.2
φjb
Junction-to-package-bottom
12.0
(1)
(2)
12
For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics.
These values are based on a JEDEC-defined 2S2P system (with the exception of the Theta JC [RΘJC] value, which is based on a
JEDEC-defined 1S0P system) and will change based on environment as well as application. For more information, see these
EIA/JEDEC standards:
• JESD51-2, Integrated Circuits Thermal Test Method Environmental Conditions - Natural Convection (Still Air)
• JESD51-3, Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages
• JESD51-7, High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages
• JESD51-9, Test Boards for Area Array Surface Mount Package Thermal Measurements
Power dissipation of 2 W and an ambient temperature of 70ºC is assumed.
Specifications
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5.8
SWRS199B – APRIL 2016 – REVISED JUNE 2020
Timing and Switching Characteristics
5.8.1
Device Power Supply
The CC2564C power-management hardware and software algorithms provide significant power savings,
which is a critical parameter in an MCU-based system.
The power-management module is optimized for drawing extremely low currents.
5.8.1.1
Power Sources
The CC2564C device requires two power sources:
• VDD_IN: main power supply for the device
• VDD_IO: power source for the 1.8-V I/O ring
The HCI module includes several on-chip voltage regulators for increased noise immunity and can be
connected directly to the battery.
5.8.1.2
Device Power-Up and Power-Down Sequencing
The device includes the following power-up requirements (see Figure 5-1):
• nSHUTD must be low. VDD_IN and VDD_IO are don't care I/O pins when nSHUTD is low. However,
signals are not allowed on the I/O pins if I/O power is not supplied, because the I/Os are not fail-safe.
Exceptions are SLOW_CLK_IN and AUD_xxx, which are fail-safe and can tolerate external voltages
with no VDD_IO and VDD_IN.
• VDD_IO and VDD_IN must be stable before releasing nSHUTD.
• The fast clock must be stable within 20 ms of nSHUTD going high.
• The slow clock must be stable within 2 ms of nSHUTD going high.
The device indicates that the power-up sequence is complete by asserting RTS low, which occurs up to
100 ms after nSHUTD goes high. If RTS does not go low, the device is not powered up. In this case,
ensure that the sequence and requirements are met.
Specifications
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Shut down
before
VDD_IO
removed
20 µs max
nSHUTD
VDD_IO
VDD_IN
2 ms max
SLOW CLOCK
20 ms max
FAST CLOCK
± 100 ms
HCI_RTS
CC256x ready
Copyright © 2016, Texas Instruments Incorporated
Figure 5-1. Power-Up and Power-Down Sequencing
5.8.1.3
Power Supplies and Shutdown—Static States
The nSHUTD signal puts the device in ultra-low-power mode and performs an internal reset to the device.
The rise time for nSHUTD must not exceed 20 µs; nSHUTD must be low for a minimum of 5 ms.
To prevent conflicts with external signals, all I/O pins are set to the high-impedance (Hi-Z) state during
shutdown and power up of the device. The internal pull resistors are enabled on each I/O pin, as
described in Section 4.1.2. Table 5-1 lists and describes the static operation states.
Table 5-1. Power Modes
VDD_IN
(1)
14
(1)
VDD_IO (1)
nSHUTD (1)
PM_MODE
COMMENTS
1
None
None
Asserted
Shutdown
I/O state is undefined. No I/O voltages
are allowed on nonfail-safe pins.
2
None
None
Deasserted
Not allowed
I/O state is undefined. No I/O voltages
are allowed on nonfail-safe pins.
3
None
Present
Asserted
Shutdown
4
None
Present
Deasserted
Not allowed
5
Present
None
Asserted
Shutdown
6
Present
None
Deasserted
Not allowed
7
Present
Present
Asserted
Shutdown
8
Present
Present
Deasserted
Active
I/Os are defined as tri-state pins with
internal pullup or pulldown enabled.
I/O state is undefined. No I/O voltages
are allowed on nonfail-safe pins.
I/O state is undefined.
I/O state is undefined. No I/O voltages
are allowed on nonfail-safe pins.
I/Os are defined as tri-state pins with
internal pullup or pulldown enabled.
See Section 5.8.1.4.
The terms None or Asserted can imply any of the following conditions: directly pulled to ground or driven low, pulled to ground through a
pulldown resistor, or left NC or floating (high-impedance output stage).
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5.8.1.4
SWRS199B – APRIL 2016 – REVISED JUNE 2020
I/O States in Various Power Modes
CAUTION
Some device I/Os are not fail-safe (see Section 4.1.2). Fail-safe means that the
pins do not draw current from an external voltage applied to the pin when I/O
power is not supplied to the device. External voltages are not allowed on these
I/O pins when the I/O supply voltage is not supplied because of possible
damage to the device.
Table 5-2 lists the I/O states in various power modes.
Table 5-2. I/O States in Various Power Modes
I/O NAME
SHUTDOWN (1)
DEFAULT ACTIVE (1)
DEEP SLEEP (1)
I/O State
Pull
I/O State
Pull
I/O State
Pull
HCI_RX
Z
PU
I
PU
I
PU
HCI_TX
Z
PU
O-H
HCI_RTS
Z
PU
O-H
HCI_CTS
Z
PU
I
PU
I
PU
AUD_CLK
Z
PD
I
PD
I
PD
AUD_FSYNC
Z
PD
I
PD
I
PD
AUD_IN
Z
PD
I
PD
I
PD
AUD_OUT
Z
PD
Z
PD
Z
PD
TX_DBG
Z
PU
O
(1)
O
O
I = input, O = output, Z = Hi-Z, – = no pull, PU = pullup, PD = pulldown, H = high, L = low
5.8.1.5
nSHUTD Requirements
MIN
MAX
UNIT
VIH
Operation mode level
(1)
PARAMETER
1.42
1.98
V
VIL
Shutdown mode level (1)
0
0.4
Minimum time for nSHUT_DOWN low to reset the device
5
tr and tf
(1)
Rise and fall times
V
ms
20
µs
An internal pulldown retains shutdown mode when no external signal is applied to this pin.
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5.8.2
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Clock Specifications
5.8.2.1
Slow Clock Requirements
An external source must supply the slow clock and connect to the SLOW_CLK_IN pin (for example, the
host or external crystal oscillator). The source must be a digital signal in the range of 0 to 1.8 V. The
accuracy of the slow-clock frequency must be 32.768 kHz ±250 ppm for Bluetooth use (as specified in the
Bluetooth specification). The external slow clock must be stable within 64 slow-clock cycles (2 ms)
following the release of nSHUTD.
CHARACTERISTICS
CONDITION
MIN
Input slow-clock frequency
TYP
MAX
32768
Input slow-clock accuracy
(Initial + temp + aging)
Hz
Bluetooth
Input transition time tr and tf
(10% to 90%)
tr and tf
Frequency input duty cycle
VIH
15%
Slow-clock input voltage limits
VIL
Square wave,
DC-coupled
50%
200
ns
VDD_IO
V peak
0
0.35 × VDD_IO
V peak
1
MΩ
5
pF
External Fast Clock Crystal Requirements and Operation
CHARACTERISTICS
CONDITION
MIN
Supported crystal frequencies
TYP
Iosc = 0.5 mA
26 MHz, external capacitance = 20 pF
Iosc = 2.2 mA
Specifications
650
UNIT
MHz
±20
26 MHz, external capacitance = 8 pF
Crystal oscillator negative
resistance
MAX
26, 38.4
Frequency accuracy
(Initial + temperature + aging)
16
ppm
85%
Input capacitance
fin
±250
0.65 × VDD_IO
Input impedance
5.8.2.2
UNIT
ppm
940
Ω
490
710
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5.8.2.3
SWRS199B – APRIL 2016 – REVISED JUNE 2020
Fast Clock Source Requirements (–40°C to +85°C)
CHARACTERISTICS
CONDITION
MIN
Supported frequencies, FREF
MAX
UNIT
26, 38.4
Reference frequency accuracy
MHz
Initial + temp + aging
Square wave, DC-coupled
Fast-clock input voltage limits
Fast-clock input rise time
(as % of clock period)
ppm
V
–0.2
0.37
VIH
1.0
2.1
V
Sine wave, AC-coupled
0.4
1.6
Vp-p
Sine wave, DC-coupled
0.4
1.6
Vp-p
Sine wave input limits, DC-coupled
0.0
1.6
V
Square wave, DC-coupled
10%
35%
Phase noise for 26 MHz
±20
VIL
Duty cycle
5.8.3
TYP
50%
65%
@ offset = 1 kHz
–123.4
@ offset = 10 kHz
–133.4
@ offset = 100 kHz
–138.4
dBc/Hz
Peripherals
5.8.3.1
UART
Figure 5-2 shows the UART timing diagram.
HCI_RTS
t2
t1
HCI_RX
t6
HCI_CTS
t3
t4
HCI_TX
Start bit
Stop bit
10 bits
td_uart_swrs064
Figure 5-2. UART Timing
Table 5-3 lists the UART timing characteristics.
Table 5-3. UART Timing Characteristics
SYMBOL
CHARACTERISTICS
CONDITION
Baud rate
MIN
TYP
37.5
MAX
UNIT
4000
kbps
Baud rate accuracy per byte
Receive and transmit
–2.5%
1.5%
Baud rate accuracy per bit
Receive and transmit
–12.5%
12.5%
t1
RTS low to RX_DATA on
t2
RTS high to RX_DATA off
t3
CTS low to TX_DATA on
t4
CTS high to TX_DATA off
t6
CTS-high pulse width
0
2
Interrupt set to 1/4 FIFO
0
Hardware flow control
µs
16
byte
1
byte
2
µs
1
bit
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Figure 5-3 shows the UART data frame.
tb
TX
STR
D0
D1
Dn
D2
PAR
STP
td_uart_swrs064
Figure 5-3. Data Frame
Table 5-4 describes the symbols used in Figure 5-3.
Table 5-4. Data Frame Key
SYMBOL
DESCRIPTION
STR
5.8.3.2
Start bit
D0...Dn
Data bits (LSB first)
PAR
Parity bit (optional)
STP
Stop bit
PCM
Figure 5-4 shows the interface timing for the PCM.
Tclk
Tw
Tw
AUD_CLK
tis
tih
AUD_IN / FSYNC_IN
top
AUD_OUT / FSYNC_OUT
td_aud_swrs064
Figure 5-4. PCM Interface Timing
Table 5-5 lists the associated PCM master parameters.
Table 5-5. PCM Master
SYMBOL
18
PARAMETER
CONDITION
MIN
MAX
244.14
(4.096 MHz)
15625
(64 kHz)
UNIT
tclk
Cycle time
tw
High or low pulse width
50% of Tclk min
ns
tis
AUD_IN setup time
25
ns
tih
AUD_IN hold time
0
ns
top
AUD_OUT propagation time
40-pF load
0
10
ns
top
FSYNC_OUT propagation time
40-pF load
0
10
ns
Specifications
ns
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Table 5-6 lists the associated PCM slave parameters.
Table 5-6. PCM Slave
SYMBOL
PARAMETER
CONDITION
MIN
MAX
UNIT
66.67
(15 MHz)
ns
40% of Tclk
ns
tclk
Cycle time
tw
High or low pulse width
Tis
AUD_IN setup time
8
ns
tih
AUD_IN hold time
0
ns
tis
AUD_FSYNC setup time
8
ns
tih
AUD_FSYNC hold time
top
AUD_OUT propagation time
0
40-pF load
0
ns
21
Specifications
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19
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SWRS199B – APRIL 2016 – REVISED JUNE 2020
5.9
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RF Performance
5.9.1
Bluetooth BR and EDR RF Performance
All parameters in this section that are fast-clock dependent are verified using a 26-MHz XTAL and
38.4-MHz TCXO.
5.9.1.1
Bluetooth Receiver—In-Band Signals
CHARACTERISTICS
CONDITION
MIN
Operation frequency range
TYP
2402
1
Input impedance
50
Sensitivity, dirty TX on (1)
π/4-DQPSK, BER = 0.01%
8DPSK, BER = 0.01%
BER error floor at sensitivity +
10 dB, dirty TX off
π/4-DQPSK
1E–6
8DPSK
1E–6
GFSK, BER = 0.1%
Maximum usable input power
Intermodulation characteristics
–10
8DPSK, BER = 0.1%
–10
Level of interferers (for n = 3, 4, and 5)
–36
GFSK, cochannel
EDR, adjacent, +2 MHz
EDR, adjacent –2 MHz
EDR, adjacent ≥ |±3| MHz
–70
1E–7
1E–5
–20
dBm
–30
–39
8
10
11
21
0
–10
–5
0
–5
–1
5
–38
–35
–30
π/4-DQPSK
–38
–35
–30
8DPSK
–38
–30
–25
π/4-DQPSK
8DPSK
–28
–20
–20
π/4-DQPSK
–28
–20
–20
8DPSK
–22
–13
–13
–45
–43
–40
π/4-DQPSK
–45
–43
–40
8DPSK
–44
–36
–33
–10
RX mode LO leakage
Frf = (received RF – 0.6 MHz)
dBm
1E–5
–5
RF return loss
–63
dBm
dB
dB
–58
dBm
Sensitivity degradation up to 3 dB may occur for minimum and typical values where the Bluetooth frequency is a harmonic of the fast
clock.
Numbers show ratio of desired signal to interfering signal. Smaller numbers indicate better C/I performance.
5.9.1.2
Bluetooth Receiver—General Blocking
CHARACTERISTICS
CONDITION
Blocking performance over full range, according to Bluetooth
specification (1)
20
–87.5
–10
GFSK, adjacent ≥ |±3| MHz
(1)
–70
13
GFSK, adjacent –2 MHz
(2)
–94.5
20
GFSK, adjacent +2 MHz
(1)
–70
11
GFSK, adjacent ±1 MHz
C/I performance (2)
Image = –1 MHz
Ω
–95
9.5
8DPSK
EDR, adjacent ±1 MHz, (image)
MHz
16.5
π/4-DQPSK
EDR, cochannel
UNIT
MHz
–5
π/4-DQPSK, BER = 0.1%
BLUETOOTH
SPECIFICATION
2480
Channel spacing
GFSK, BER = 0.1%
MAX
MIN
TYP
30 to 2000 MHz
–6
2000 to 2399 MHz
–6
2484 to 3000 MHz
–6
3 to 12.75 GHz
–6
UNIT
dBm
Exceptions are taken out of the total 24 allowed in the Bluetooth specification.
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5.9.1.3
SWRS199B – APRIL 2016 – REVISED JUNE 2020
Bluetooth Transmitter—GFSK
CHARACTERISTICS
Maximum RF output
power (1)
MIN
TYP
VDD_IN = VBAT
12
VDD_IN = external regulator to 1.8 V
10
Power variation over Bluetooth band
MAX
BLUETOOTH
SPECIFICATION
UNIT
dBm
–1
1
dB
Gain control range
30
Power control step
5
2 to 8
dB
Adjacent channel power |M–N| = 2
–45
≤ –20
dBm
Adjacent channel power |M–N| > 2
–50
≤ –40
dBm
(1)
dB
To modify maximum output power, use an HCI VS command.
5.9.1.4
Bluetooth Transmitter—EDR
CHARACTERISTICS
π/4-DQPSK
EDR output
power (1)
8DPSK
MIN
TYP
VDD_IN = VBAT
5.5
VDD_IN = external regulator to 1.8 V
5.5
VDD_IN = VBAT
5.5
VDD_IN = external regulator to 1.8 V
MAX
BLUETOOTH
SPECIFICATION
UNIT
dBm
5.5
EDR relative power
–2
Power variation over Bluetooth band
–1
1
–4 to +1
dB
1
dB
Gain control range
30
Power control step
5
2 to 8
dB
Adjacent channel power |M–N| = 1
–36
≤ –26
dBc
Adjacent channel power |M–N| = 2 (2)
–30
≤ –20
dBm
Adjacent channel power |M–N| > 2 (2)
–42
≤ –40
dBm
(1)
(2)
dB
To modify maximum output power, use an HCI VS command.
Assumes 3-dB insertion loss from Bluetooth RF ball to antenna.
5.9.1.5
Bluetooth Modulation—GFSK
CHARACTERISTICS
–20-dB bandwidth
F1 avg
Modulation characteristics
F2 max
CONDITION
MIN
BLUETOOTH
SPECIFICATION
UNIT
925
≤ 1000
kHz
Δf1avg
165
140 to 175
kHz
Δf2max ≥ limit for at
least 99.9% of all
Δf2max
Mod data = 1010101...
130
> 115
kHz
88%
> 80%
DH1
–25
25
< ±25
DH3 and DH5
–35
35
< ±40
15
< 20
kHz/50 µs
+75
< ±75
kHz
Drift rate
Initial carrier frequency
tolerance
MAX
Mod data = 4 1 s,
4 0 s:
111100001111...
GFSK
Δf2avg, Δf1avg
Absolute carrier frequency
drift
TYP
f0–fTX
–75
kHz
Specifications
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5.9.1.6
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Bluetooth Modulation—EDR
CHARACTERISTICS
CONDITION
MIN
TYP
BLUETOOTH
SPECIFICATION
UNIT
≤ 10
kHz
±5
≤ 10
kHz
±75
±75
kHz
MAX
Carrier frequency stability
Carrier frequency stability
Initial carrier frequency tolerance
RMS DEVM (1)
99% DEVM (1)
Peak DEVM (1)
(1)
π/4-DQPSK
6%
8DPSK
6%
13%
π/4-DQPSK
30%
30%
8DPSK
20%
20%
π/4-DQPSK
14%
35%
8DPSK
16%
25%
Maximum performance refers to maximum TX power.
5.9.1.7
Bluetooth Transmitter—Out-of-Band and Spurious Emissions
CHARACTERISTICS
CONDITION
Second harmonic (1)
Third harmonic
(1)
Measured at maximum output power
Fourth harmonics (1)
(1)
20%
TYP
MAX
UNIT
–14
–2
dBm
–10
–6
dBm
–19
–11
dBm
Meets FCC and ETSI requirements with the external filter listed in Table 7-1.
5.9.2
Bluetooth low energy RF Performance
All parameters in this section that are fast-clock dependent are verified using a 26-MHz XTAL and a
38.4-MHz TCXO.
5.9.2.1
Bluetooth low energy Receiver—In-Band Signals
CHARACTERISTIC
CONDITION
Operation frequency range
MIN
TYP
2402
MAX
BLUETOOTH
low energy
SPECIFICATION
2480
UNIT
MHz
Channel spacing
2
MHz
Input impedance
50
Ω
Sensitivity, dirty TX on
(1)
PER = 30.8%; dirty TX on
Maximum usable input power
GMSK, PER = 30.8%
Intermodulation characteristics
Level of interferers
(for n = 3, 4, 5)
RX mode LO leakage
(1)
(2)
22
dBm
≥ –10
dBm
–30
≥ –50
dBm
8
≤ 21
GMSK, adjacent ±1 MHz
–5
≤ 15
GMSK, adjacent +2 MHz
–45
≤ –17
GMSK, adjacent –2 MHz
–22
≤ –15
GMSK, adjacent ≥ |±3| MHz
–47
≤ –27
Frf = (received RF – 0.6 MHz)
–63
GMSK, cochannel
C/I performance (2)
Image = –1 MHz
≤ –70
–96
–5
dB
dBm
Sensitivity degradation up to 3 dB may occur where the Bluetooth low energy frequency is a harmonic of the fast clock.
Numbers show wanted signal-to-interfering signal ratio. Smaller numbers indicate better C/I performance.
Specifications
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5.9.2.2
SWRS199B – APRIL 2016 – REVISED JUNE 2020
Bluetooth low energy Receiver—General Blocking
CHARACTERISTICS
CONDITION
MIN
30 to 2000 MHz
Blocking performance over full 2000 to 2399 MHz
range, according to Bluetooth
2484 to 3000 MHz
low energy specification (1)
3 to 12.75 GHz
(1)
TYP
BLUETOOTH
low energy
SPECIFICATION
–15
≥ –30
–15
≥ –35
–15
≥ –35
–15
≥ –30
UNIT
dBm
Exceptions are taken out of the total 10 allowed in the Bluetooth low energy specification.
5.9.2.3
Bluetooth low energy Transmitter
CHARACTERISTICS
RF output power
MIN
TYP
VDD_IN = VBAT
VDD_IN = External regulator to 1.8 V
MAX
BLUETOOTH
low energy
SPECIFICATION
12 (1)
≤10
10
≤10
Power variation over Bluetooth low energy band
UNIT
dBm
1
dB
Adjacent channel power |M-N| = 2
–45
≤ –20
dBm
Adjacent channel power |M-N| > 2
–50
≤ –30
dBm
(1)
To achieve the Bluetooth low energy specification of 10-dBm maximum, an insertion loss of > 2 dB is assumed between the RF ball and
the antenna. Otherwise, use an HCI VS command to modify the output power.
5.9.2.4
Bluetooth low energy Modulation
CHARACTERISTICS
Δf1 avg
Δf2 max
Modulation
characteristics
CONDITION
MIN
TYP
MAX
BLUETOOTH
low energy
SPECIFICATION
UNIT
260
225 to 275
kHz
kHz
Δf1avg
Mod data = 4 1s, 4 0s:
1111000011110000...
240
250
Δf2max ≥ limit for at
least 99.9% of all
Δf2max
Mod data = 1010101...
185
210
≥ 185
0.85
0.9
≥ 0.8
Δf2avg, Δf1avg
Absolute carrier
frequency drift
–25
Drift rate
Initial carrier
frequency
tolerance
5.9.2.5
–75
≤ ±50
kHz
15
≤ 20
kHz/50 ms
75
≤ ±100
kHz
Bluetooth low energy Transceiver, Out-of-Band and Spurious Emissions
CHARACTERISTICS
CONDITION
Second harmonic (1)
Third harmonic
(1)
Measured at maximum output power
Fourth harmonics (1)
(1)
25
TYP
MAX
UNIT
–14
–2
dBm
–10
–6
dBm
–19
–11
dBm
Meets FCC and ETSI requirements with the external filter listed in Table 7-1.
Specifications
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6 Detailed Description
6.1
Overview
The CC2564C architecture comprises a DSP and a point-to-multipoint baseband core. The architecture is
based on a single-processor ARM7TDMI® core. The device includes several on-chip peripherals to enable
easy communication with a host system and the Bluetooth BR, EDR, and low energy core.
6.2
Functional Block Diagram
CC2564C
2.4-GHz
band-pass filter
Coprocessor
(See Note)
PCM-I2S
Modem
arbitrator
I/O
interface
DRP
BR/EDR
main processor
UART
HCI
Power
management
Power
Shutdown
Clock
management
Slow
clock
Fast
clock
Copyright © 2016, Texas Instruments Incorporated
NOTE: The following technologies and assisted modes cannot be used simultaneously with the coprocessor: Bluetooth low
energy, assisted HFP 1.6 (WBS), and assisted A2DP. Only one technology or assisted mode can be used at a time.
Figure 6-1. CC2564C Functional Block Diagram
6.3
Clock Inputs
This section describes the available clock inputs. For specifications, see Section 5.8.2.
6.3.1
Slow Clock
An external source must supply the slow clock and connect to the SLOW_CLK_IN pin (for example, the
host or external crystal oscillator). The source must be a digital signal in the range of 0 V to 1.8 V. The
accuracy of the slow-clock frequency must be 32.768 kHz ±250 ppm for Bluetooth use (as specified in the
Bluetooth specification). The external slow clock must be stable within 64 slow-clock cycles (2 ms)
following the release of nSHUTD.
6.3.2
Fast Clock Using External Clock Source
An external clock source is fed to an internal pulse-shaping cell to provide the fast-clock signal for the
device. The device incorporates an internal, automatic clock-scheme detection mechanism that
automatically detects the fast-clock scheme used and configures the FREF cell accordingly. This
mechanism ensures that the electrical characteristics (loading) of the fast-clock input remain static
regardless of the scheme used and eliminates any power-consumption penalty-versus-scheme used.
The frequency variation of the fast-clock source must not exceed ±20 ppm (as defined by the Bluetooth
specification).
The external clock can be AC- or DC-coupled, sine or square wave.
24
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SWRS199B – APRIL 2016 – REVISED JUNE 2020
External FREF DC-Coupled
Figure 6-2 and Figure 6-3 show the clock configuration when using a square wave, DC-coupled external
source for the fast-clock input.
NOTE
A shunt capacitor with a range of 10 nF must be added on the oscillator output to reject high
harmonics and shape the signal to be close to a sinusoidal waveform.
TI recommends using only a dedicated LDO to feed the oscillator. Do not use the same VIO
for the oscillator and the CC2564C device.
FREFP
CC2564C
FREFM
Copyright © 2016, Texas Instruments Incorporated
Figure 6-2. Clock Configuration (Square Wave, DC-Coupled)
VFref [V]
2.1
1.0
0.37
Vhigh_min
Vlow_max
–0.2
t
clksqtd_wrs064
Figure 6-3. External Fast Clock (Square Wave, DC-Coupled)
Figure 6-4 and Figure 6-5 show the clock configuration when using a sine wave, DC-coupled external
source for the fast clock input.
FREFP
CC2564C
FREFM
VDD_IO
Copyright © 2016, Texas Instruments Incorporated
Figure 6-4. Clock Configuration (Sine Wave, DC-Coupled)
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VIN
1.6 V
VPP = 0.4 – 1.6 Vp-p
Vdc = 0.2 – 1.4 V
0
t
SWRS097-023
Figure 6-5. External Fast Clock (Sine Wave, DC-Coupled)
6.3.2.2
External FREF Sine Wave, AC-Coupled
Figure 6-6 and Figure 6-7 show the configuration when using a sine wave, AC-coupled external source for
the fast-clock input.
FREFP
68 pF
CC2564C
FREFM
VDD_IO
Copyright © 2016, Texas Instruments Incorporated
Figure 6-6. Clock Configuration (Sine Wave, AC-Coupled)
VIN [V]
1V
VPP = 0.4 – 1.6 Vp-p
0.8
0.2
0
t
–0.2
–0.8
SWRS097-022
Figure 6-7. External Fast Clock (Sine Wave, AC-Coupled)
In cases where the input amplitude is greater than 1.6 Vp-p, the amplitude can be reduced to within limits.
Using a small series capacitor forms a voltage divider with the internal input capacitance of approximately
2 pF to provide the required amplitude at the device input.
26
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6.3.2.3
SWRS199B – APRIL 2016 – REVISED JUNE 2020
Fast Clock Using External Crystal
The CC2564C device incorporates an internal crystal oscillator buffer to support a crystal-based fast-clock
scheme. The supported crystal frequencies are 26 and 38.4 MHz.
The frequency accuracy of the fast-clock source must not exceed ±20 ppm (including the accuracy of the
capacitors, as specified in the Bluetooth specification).
Figure 6-8 shows the recommended fast-clock circuitry.
CC2564C
C1
XTALM
Oscillator
buffer
XTAL
XTALP
C2
Copyright © 2016, Texas Instruments Incorporated
Figure 6-8. Fast-Clock Crystal Circuit
Table 6-1 lists component values for the fast-clock crystal circuit.
Table 6-1. Fast-Clock Crystal Circuit
Component Values
(1)
FREQ (MHz)
C1 (pF) (1)
C2 (pF) (1)
26
12
12
To achieve the required accuracy, values for C1 and C2 must be
taken from the crystal manufacturer's data sheet and layout
considerations.
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6.4
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Functional Blocks
6.4.1
RF
TheCC2564C device is the third generation of Bluetooth single-chip devices using DRP architecture from
TI. Modifications and new features added to the DRP further improve radio performance.
Figure 6-9 shows the DRP block diagram.
Transmitter path
Amplitude
TX digital data
Digital
ADPLL
DPA
Phase
Receiver path
RX digital data
Demodulation
ADC
IFA
Filter
LNA
SWRS092-005
Copyright © 2016, Texas Instruments Incorporated
Figure 6-9. DRP Block Diagram
6.4.1.1
Receiver
The receiver uses near-zero-IF architecture to convert the RF signal to baseband data. The signal
received from the external antenna is input to a single-ended low-noise amplifier (LNA) and passed to a
mixer that downconverts the signal to IF, followed by a filter and amplifier. The signal is then quantized by
a sigma-delta analog-to-digital converter (ADC) and further processed to reduce the interference level.
The demodulator digitally downconverts the signal to zero-IF and recovers the data stream using an
adaptive-decision mechanism. The demodulator includes EDR processing with:
• State-of-the-art performance
• A maximum-likelihood sequence estimator (MLSE) to improve the performance of basic-rate GFSK
sensitivity
• Adaptive equalization to enhance EDR modulation
New features include:
• LNA input range narrowed to increase blocking performance
• Active spur cancellation to increase robustness to spurs
28
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Transmitter
The transmitter is an all-digital, sigma-delta phase-locked loop (ADPLL) based with a digitally controlled
oscillator (DCO) at 2.4 GHz as the RF clock. The transmitter directly modulates the digital PLL. The power
amplifier is also digitally controlled. The transmitter uses the polar-modulation technique. While the phasemodulated control word is fed to the ADPLL, the amplitude-modulated controlled word is fed to the class-E
amplifier to generate a Bluetooth standard-compliant RF signal.
New features include:
• Improved TX output power
• LMS algorithm to improve the differential error vector magnitude (DEVM)
6.4.2
Host Controller Interface
The CC2564C device incorporates one UART module dedicated to the HCI transport layer. The HCI
transports commands, events, and ACL between the device and the host using HCI data packets.
The CC2564C device supports the H4 protocol (4-wire UART) with hardware flow control and the H5
protocol (3-wire UART) with software flow control. The CC2564C device automatically detects the protocol
on reception of the first command.
The maximum baud rate of the UART module is 4 Mbps; however, the default baud rate after power up is
set to 115.2 kbps. The baud rate can thereafter be changed with a VS command. The device responds
with a command complete event (still at 115.2 kbps), after which the baud rate change occurs.
The UART module includes the following features:
• Receiver detection of break, idle, framing, FIFO overflow, and parity error conditions
• Transmitter underflow detection
• CTS and RTS hardware flow control (H4 protocol)
• XON and XOFF software flow control (H5 protocol)
Table 6-2 lists the UART module default settings.
Table 6-2. UART Module Default Settings
PARAMETER
VALUE
Bit rate
115.2 kbps
Data length
8 bits
Stop bit
1
Parity
None
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6.4.2.1
www.ti.com
4-Wire UART Interface—H4 Protocol
The H4 UART Interface includes four signals:
• TX
• RX
• CTS
• RTS
Flow control between the host and the CC2564C device is bytewise by hardware.
Figure 6-10 shows the H4 UART interface.
Host
Host_RX
HCI_RX
Host_TX
HCI_TX
Host_CTS
HCI_CTS
Host_RTS
HCI_RTS
CC2564C
Copyright © 2016, Texas Instruments Incorporated
Figure 6-10. H4 UART Interface
When the UART RX buffer of the device passes the flow control threshold, it sets the HCI_RTS signal
high to stop transmission from the host.
When the HCI_CTS signal is set high, the device stops transmission on the interface. If HCI_CTS is set
high while transmitting a byte, the device finishes transmitting the byte and stops the transmission.
The H4 protocol device includes a mechanism that handles the transition between active mode and sleep
mode. The protocol occurs through the CTS and RTS UART lines and is known as the enhanced HCI low
level (eHCILL) power-management protocol.
For more information on the H4 UART protocol, see Volume 4 Host Controller Interface, Part A UART
Transport
Layer
of
the
Bluetooth
Core
Specifications
(www.bluetooth.org/en-us/specification/adoptedspecifications).
30
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SWRS199B – APRIL 2016 – REVISED JUNE 2020
3-Wire UART Interface—H5 Protocol
The H5 UART interface consists of three signals (see Figure 6-11):
• TX
• RX
• GND
Host
Host_RX
HCI_RX
Host_TX
HCI_TX
CC2564C
GND
GND
Copyright © 2016, Texas Instruments Incorporated
Figure 6-11. H5 UART Interface
The H5 protocol supports the following features:
• Software flow control (XON/XOFF)
• Power management using the software messages:
– WAKEUP
– WOKEN
– SLEEP
• CRC data integrity check
For more information on the H5 UART protocol, see Volume 4 Host Controller Interface, Part D ThreeWire
UART
Transport
Layer
of
the
Bluetooth
Core
Specifications
(www.bluetooth.org/en-us/specification/adoptedspecifications).
6.4.3
Digital Codec Interface
The codec interface is a fully programmable port to support seamless interfacing with different PCM and
I2S codec devices. The interface includes the following features:
• Two voice channels
• Master and slave modes
• All voice coding schemes defined by the Bluetooth specification: linear, A-Law, and µ-Law
• Long and short frames
• Different data sizes, order, and positions
• High flexibility to support a variety of codecs
• Bus sharing: Data_Out is in the Hi-Z state when the interface is not transmitting voice data.
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6.4.3.1
www.ti.com
Hardware Interface
The interface includes four signals:
• Clock: configurable direction (input or output)
• Frame_Sync and Word_Sync: configurable direction (input or output)
• Data_In: input
• Data_Out: output or tri-state signal
The CC2564C device can be the master of the interface when generating the Clock and Frame_Sync
signals or the slave when receiving these two signals.
For slave mode, clock input frequencies of up to 15 MHz are supported. At clock rates above 12 MHz, the
maximum data burst size is 32 bits.
For master mode, the device can generate any clock frequency from 64 kHz to 4.096 MHz.
6.4.3.2
I2S
When the codec interface is configured to support the I2S protocol, these settings are recommended:
• Bidirectional, full-duplex interface
• Two time slots per frame: time slot 0 for the left channel audio data; and time slot 1 for the right
channel audio data
• The length of each time slot is configurable up to 40 serial clock cycles, and the length of the frame is
configurable up to 80 serial clock cycles
6.4.3.3
Data Format
The data format is fully configurable:
• The data length can be from 8 to 320 bits in 1-bit increments when working with 2 channels, or up to
640 bits when working with 1 channel. The data length can be set independently for each channel.
• The data position within a frame is also configurable within 1 clock (bit) resolution and can be set
independently (relative to the edge of the Frame_Sync signal) for each channel.
• The Data_In and Data_Out bit order can be configured independently. For example; Data_In can start
with the most significant bit (MSB); Data_Out can start with the least significant bit (LSB). Each
channel is separately configurable. The inverse bit order (that is, LSB first) is supported only for
sample sizes up to 24 bits.
• Data_In and Data_Out are not required to be the same length.
• The Data_Out line is configured to Hi-Z output between data words. Data_Out can also be set for
permanent Hi-Z output, regardless of the data output. This configuration allows the device to be a bus
slave in a multislave PCM environment. At power up, Data_Out is configured as Hi-Z output.
6.4.3.4
Frame-Idle Period
The codec interface handles frame-idle periods, during which the clock pauses and becomes 0 at the end
of the frame after all data are transferred.
The device supports frame-idle periods both as master and slave of the codec bus.
When the device is the master of the interface, the frame-idle period is configurable. There are two
configurable parameters:
• Clk_Idle_Start: indicates the number of clock cycles from the beginning of the frame to the beginning of
the frame-idle period. After Clk_Idle_Start clock cycles, the clock becomes 0.
• Clk_Idle_End: indicates the time from the beginning of the frame to the end of the frame-idle period.
The time is given in multiples of clock periods.
The delta between Clk_Idle_Start and Clk_Idle_End is the clock idle period.
For example, for clock rate = 1 MHz, frame sync period = 10 kHz, Clk_Idle_Start = 60, Clk_Idle_End = 90.
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Between both Frame_Sync signals there are 70 clock cycles (instead of 100). The clock idle period starts
60 clock cycles after the beginning of the frame and lasts 90 – 60 = 30 clock cycles. Thus, the idle period
ends 100 – 90 = 10 clock cycles before the end of the frame. The data transmission must end before the
beginning of the idle period.
Figure 6-12 shows the frame idle timing.
Frame period
Frame_Sync
Data_In
Data_Out
Frame idle
Clock
Clk_Idle_Start
Clk_Idle_End
frmidle_swrs064
Figure 6-12. Frame Idle Period
6.4.3.5
Clock-Edge Operation
The codec interface of the device can work on the rising or the falling edge of the clock and can sample
the Frame_Sync signal and the data at inversed polarity.
Figure 6-13 shows the operation of a falling-edge-clock type of codec. The codec is the master of the bus.
The Frame_Sync signal is updated (by the codec) on the falling edge of the clock and is therefore
sampled (by the device) on the next rising clock. The data from the codec is sampled (by the device) on
the falling edge of the clock.
PCM FSYNC
PCM CLK
D7
PCM DATA IN
D6
D5
D4
D3
D2
D1
D0
CC256x
SAMPLE TIME
SWRS121-004
Copyright © 2016, Texas Instruments Incorporated
Figure 6-13. Negative Clock Edge Operation
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6.4.3.6
www.ti.com
Two-Channel Bus Example
Figure 6-14 shows a 2-channel bus in which the two channels have different word sizes and arbitrary
positions in the bus frame.
...
Clock
FT
127 0
1
2 3
4
5
6
7
...
42 43 44
8 9
127 0
Fsync
MSB
MSB
LSB
LSB
Data_Out
bit bit bit bit bit bit bit bit bit bit bit
0 1 2 3 4 5 6 7 8 9 10
bit bit bit bit bit bit bit bit
0 1 2 3 4 5 6 7
...
Data_In
bit bit bit bit bit bit bit bit bit bit bit
0 1 2 3 4 5 6 7 8 9 10
bit bit bit bit bit bit bit bit
0 1 2 3 4 5 6 7
...
PCM_data_window
CH1 data start FT = 0
CH1 data length = 11
CH2 data
start FT = 43
CH2 data
length = 8
Fsync period = 128
Fsync length = 1
twochpcm_swrs064
NOTE: FT stands for frame timer.
Figure 6-14. 2-Channel Bus Timing
34
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6.4.4
SWRS199B – APRIL 2016 – REVISED JUNE 2020
Assisted Modes
The CC2564C device contains an embedded coprocessor that can be used for multiple purposes (see
Section 1.4). The CC2564C device uses the coprocessor to perform the LE functionality or to execute the
assisted HFP 1.6 (WBS) or assisted A2DP functions. Only one of these functions can be executed at a
time because they all use the same resources (that is, the coprocessor; see Table 3-1 for the modes of
operation supported by each device).
This section describes the assisted HFP 1.6 (WBS) and assisted A2DP modes of operation. These modes
of operation minimize host processing and power by taking advantage of the device coprocessor to
perform the voice and audio SBC processing required in HFP 1.6 (WBS) and A2DP profiles. This section
also compares the architecture of the assisted modes with the common implementation of the HFP 1.6
and A2DP profiles.
The assisted HFP 1.6 (WBS) and assisted A2DP modes of operation comply fully with the HFP 1.6 and
A2DP Bluetooth specifications. For more information on these profiles, see the corresponding Bluetooth
Profile Specification (www.bluetooth.org/en-us/specification/adopted-specifications).
6.4.4.1
Assisted HFP 1.6 (WBS)
The HFP 1.6 Profile Specification adds the requirement for WBS support. The WBS feature allows twice
the voice quality versus legacy voice coding schemes at the same air bandwidth (64 kbps). This feature is
achieved using a voice sampling rate of 16 kHz, a modified subband coding (mSBC) scheme, and a
packet loss concealment (PLC) algorithm. The mSBC scheme is a modified version of the mandatory
audio coding scheme used in the A2DP profile with the parameters listed in Table 6-3.
Table 6-3. mSBC Parameters
PARAMETER
VALUE
Channel mode
Mono
Sampling rate
16 kHz
Allocation method
Loudness
Subbands
8
Block length
15
Bitpool
26
The assisted HFP 1.6 mode of operation implements this WBS feature on the embedded CC2564C
coprocessor. That is, the mSBC voice coding scheme and the PLC algorithm are executed in the
CC2564C coprocessor rather than in the host, thus minimizing host processing and power. One WBS
connection at a time is supported, and WBS and NBS connections cannot be used simultaneously in this
mode of operation. Figure 6-15 shows the architecture comparison between the common implementation
of the HFP 1.6 profile and the assisted HFP 1.6 solution.
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HFP 1.6 Architecture
Assisted HFP 1.6 Architecture
Host Processor
Host Processor
PCM
/
I2S
HFP1.6
Profile
Control
16 kHz
16 bits
Audio
codec
HFP1.6
Profile
mSBC
+ PLC
Control
Data
Bluetooth Stack
Bluetooth Stack
SCO
L2CAP
L2CAP
HCI
Control
HCI
Data
Control
HCI
HCI
CC256x
Bluetooth Controller
PCM
/
I2S
16 kHz
16 bits
Data
Audio
codec
CC256x
Bluetooth Controller
mSBC
+ PLC
Copyright © 2016, Texas Instruments Incorporated
Figure 6-15. HFP 1.6 Architecture Versus Assisted HFP 1.6 Architecture
For detailed information on the HFP 1.6 profile, see the Hands-Free Profile 1.6 Specification
(www.bluetooth.org/en-us/specification/adopted-specifications).
6.4.4.2
Assisted A2DP
The advanced audio distribution profile (A2DP) enables wireless transmission of high-quality mono or
stereo audio between two devices. A2DP defines two roles:
• A2DP source is the transmitter of the audio stream.
• A2DP sink is the receiver of the audio stream.
A typical use case streams music from a tablet, phone, or PC (the A2DP source) to headphones or
speakers (the A2DP sink). This section describes the architecture of these roles and compares them with
the corresponding assisted-A2DP architecture. To use the air bandwidth efficiently, the audio data must be
compressed in a proper format. The A2DP mandates support of the SBC scheme. Other audio coding
algorithms can be used; however, both Bluetooth devices must support the same coding scheme. SBC is
the only coding scheme spread out in all A2DP Bluetooth devices; thus, it is the only coding scheme
supported in the assisted A2DP modes. Table 6-4 lists the recommended parameters for the SBC scheme
in the assisted A2DP modes.
36
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Table 6-4. Recommended Parameters for the SBC Scheme in Assisted A2DP Modes
SBC
ENCODER
SETTINGS (1)
Sampling
frequency
(kHz)
MID QUALITY
MONO
HIGH QUALITY
JOINT STEREO
MONO
JOINT STEREO
44.1
48
44.1
48
44.1
48
44.1
48
Bitpool value
19
18
35
33
31
29
53
51
Resulting
frame length
(bytes)
46
44
83
79
70
66
119
115
Resulting bit
rate (Kbps)
127
132
229
237
193
198
328
345
(1)
Other settings: Block length = 16; allocation method = loudness; subbands = 8.
The SBC scheme supports a wide variety of configurations to adjust the audio quality. Table 6-5 through
Table 6-12 list the supported SBC capabilities in the assisted A2DP modes.
Table 6-5. Channel Modes
CHANNEL MODE
STATUS
Mono
Supported
Dual channel
Supported
Stereo
Supported
Joint stereo
Supported
Table 6-6. Sampling Frequency
SAMPLING FREQUENCY (kHz)
STATUS
16
Supported
44.1
Supported
48
Supported
Table 6-7. Block Length
BLOCK LENGTH
STATUS
4
Supported
8
Supported
12
Supported
16
Supported
Table 6-8. Subbands
SUBBANDS
STATUS
4
Supported
8
Supported
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Table 6-9. Allocation Method
ALLOCATION METHOD
STATUS
SNR
Supported
Loudness
Supported
Table 6-10. Bitpool Values
BITPOOL RANGE
STATUS
Assisted A2DP sink: 2–54
Supported
Assisted A2DP source: 2–57
Supported
Table 6-11. L2CAP MTU Size
L2CAP MTU SIZE (BYTES)
STATUS
Assisted A2DP sink: 260–800
Supported
Assisted A2DP source: 260–1021
Supported
Table 6-12. Miscellaneous Parameters
ITEM
VALUE
STATUS
A2DP content protection
Protected
Not supported
AVDTP service
Basic type
Supported
L2CAP mode
Basic mode
Supported
L2CAP flush
Nonflushable
Supported
For detailed information on the A2DP profile, see the A2DP Profile Specification at Adopted Bluetooth
Core Specifications.
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6.4.4.2.1 Assisted A2DP Sink
The role of the A2DP sink is to receive the audio stream in an A2DP Bluetooth connection. In this role, the
A2DP layer and its underlying layers are responsible for link management and data decoding. To handle
these tasks, two logic transports are defined:
• Control and signaling logic transport
• Data packet logic transport
The assisted A2DP takes advantage of this modularity to handle the data packet logic transport in the
CC2564C device. First, the assisted A2DP implements a light L2CAP layer (L-L2CAP) and light AVDTP
layer (L-AVDTP) to defragment the packets. Then the assisted A2DP performs the SBC decoding on-chip
to deliver raw audio data through the device PCM–I2S interface. Figure 6-16 shows the comparison
between a common A2DP sink architecture and the assisted A2DP sink architecture.
Assisted A2DP Sink Architecture
A2DP Sink Architecture
Host Processor
Host Processor
Bluetooth Stack
PCM
/
I2S
A2DP
Profile
44.1 kHz
48 kHz
16 bits
Bluetooth Stack
Audio
codec
A2DP
Profile
SBC
AVDTP
Control
AVDTP
Data
Control
L2CAP
L2CAP
HCI
HCI
Control
Contro
l
Data
HCI
Data
HCI
CC256x
Bluetooth Controller
PCM
/
I2S
CC256x
Bluetooth Controller
44.1 kHz
48 kHz
16 bits
Audio
codec
SBC
L-AVDTP
L-L2CAP
Copyright © 2016, Texas Instruments Incorporated
Figure 6-16. A2DP Sink Architecture Versus Assisted A2DP Sink Architecture
For more information on the A2DP sink role, see the A2DP Profile Specification at Adopted Bluetooth
Core Specifications.
Detailed Description
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6.4.4.2.2 Assisted A2DP Source
The role of the A2DP source is to transmit the audio stream in an A2DP Bluetooth connection. In this role,
the A2DP layer and its underlying layers are responsible for link management and data encoding. To
handle these tasks, two logic transports are defined:
• Control and signaling logic transport
• Data packet logic transport
The assisted A2DP takes advantage of this modularity to handle the data packet logic transport in the
CC2564C device. First, the assisted A2DP encodes the raw data from the CC2564C PCM–I2S interface
using an on-chip SBC encoder. Then the assisted A2DP implements an L-L2CAP layer and an L-AVDTP
layer to fragment and packetize the encoded audio data. Figure 6-17 shows the comparison between a
common A2DP source architecture and the assisted A2DP source architecture.
A2DP Source Architecture
Assisted A2DP Source Architecture
Host Processor
Host Processor
Bluetooth Stack
PCM
/
I2S
A2DP
Profile
44.1 kHz
48 kHz
16 bits
Bluetooth Stack
Audio
codec
A2DP
Profile
SBC
AVDTP
Control
AVDTP
Data
Control
L2CAP
L2CAP
HCI
HCI
Control
Data
Control
HCI
Data
HCI
CC256x
Bluetooth Controller
PCM
/
I2S
CC256x
Bluetooth Controller
44.1 kHz
48 kHz
16 bits
Audio
codec
SBC
L-AVDTP
L-L2CAP
Copyright © 2016, Texas Instruments Incorporated
Figure 6-17. A2DP Source Architecture Versus Assisted A2DP Source Architecture
For more information on the A2DP source role, see the A2DP Profile Specification at Adopted Bluetooth
Core Specifications.
40
Detailed Description
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6.5
SWRS199B – APRIL 2016 – REVISED JUNE 2020
Bluetooth BR and EDR Features
The CC2564C device complies with the Bluetooth 5.1 specification up to the HCI layer (for family
members and technology supported, see Table 3-1):
• Up to seven active devices
• Scatternet: Up to three piconets simultaneously, one as master and two as slaves
• Up to two SCO links on the same piconet
• Very fast AFH algorithm for asynchronous connection-oriented link (ACL) and eSCO link
• Supports typical 12-dBm TX power without an external power amplifier (PA), thus improving Bluetooth
link robustness
• DRP single-ended 50-Ω I/O for easy RF interfacing
• Internal temperature detection and compensation to ensure minimal variation in RF performance over
temperature
• Includes a 128-bit hardware encryption accelerator as defined by the Bluetooth specifications
• Flexible PCM and I2S digital codec interface:
– Full flexibility of data format (linear, A-Law, µ-Law)
– Data width
– Data order
– Sampling
– Slot positioning
– Master and slave modes
– High clock rates up to 15 MHz for slave mode (or 4.096 MHz for master mode)
• Support for all voice air-coding
– CVSD
– A-Law
– µ-Law
– Transparent (uncoded)
– mSBC
• The CC2564C device provides an assisted mode for the HFP 1.6 (wideband speech [WBS]) profile or
A2DP profile to reduce host processing and power.
6.6
Bluetooth Low Energy Description
The CC2564C device complies with the Bluetooth 5.1 specification up to the HCI layer (for the family
members and technology supported, see Table 3-1):
• Solution optimized for proximity and sports use cases
• Supports up to 10 simultaneous connections
• Multiple sniff instances that are tightly coupled to achieve minimum power consumption
• Independent buffering for low energy, allowing large numbers of multiple connections without affecting
BR or EDR performance
• Built-in coexistence and prioritization handling
NOTE
The assisted modes (HFP 1.6 and A2DP) are not available when Bluetooth low energy is
enabled.
Detailed Description
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6.7
www.ti.com
Bluetooth Transport Layers
Figure 6-18 shows the Bluetooth transport layers.
UART transport layer
Host controller interface
Data
Control
HCI data handler
General
modules:
Event
HCI command handler
HCI vendorspecific
Trace
Data
Link manager
Timers
Data
Sleep
Link controller
RF
SWRS121-016
Copyright © 2016, Texas Instruments Incorporated
Figure 6-18. Bluetooth Transport Layers
6.8
Changes from the CC2564B Device to the CC2564C Device
The CC2564C device includes the following changes:
• Support added for standard HCI command for WBS to replace HCI VS command sequence
– Part of the Core Specification Addendum 2 (CSA2)
• Easy PCM interface integration when using both WBS (16 kHz) and NBS (8 kHz)
• PLC support added for NBS (8 kHz) when working at 16-kHz PCM clock
• Option added to start and stop the PCM clock as master on the PCM bus even when voice call is not
active or set a timer to extend the clock after voice or audio is removed
• Link layer topology support—Acts concurrently as peripheral and central low-energy device
• AFH algorithm enhancements—Improvements to the automatic frequency hopping algorithms
42
Detailed Description
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7 Applications, Implementation, and Layout
NOTE
Information in the following Applications section is not part of the TI component specification,
and TI does not warrant its accuracy or completeness. TI’s customers are responsible for
determining suitability of components for their purposes. Customers should validate and test
their design implementation to confirm system functionality.
7.1
7.1.1
Reference Design Schematics and BOM
VQFNP-MR Schematic and BOM
Figure 7-1 shows the reference schematics for the VQFNP-MR package. For complete schematics and
PCB layout guidelines, contact your TI representative.
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C1
50 Ohm
4
IN
22pF
OUT
2
GND
GND
3
1
2
ANT1
1
Antenna match. Pi network might be
required depending on type of antenna.
L1 can be replaced with 0 ohms and C2
DNP if no matching is required.
L1
GND
C2
GND
FL1
GND
U1A
GND
BT_RF
B8
VDD_IO (1.62 V to 1.92 V)
VCC_1V8_32K
A26
A33
A32
A29
CC_HCI_TX_1V8
CC_HCI_RX_1V8
CC_HCI_RTS_1V8
CC_HCI_CTS_1V8
R1
10k
2
E/D
VCC
GND
OUT
4
C18
0.1µF
3
32.768kHz
A35
B32
B34
B33
CC_AUD_FSYNC_1V8
CC_AUD_CLK_1V8
CC_AUD_IN_1V8
CC_AUD_OUT_1V8
Y1
1
SLOW_CLK_INT_1V8
A25
VDD_IO
VDD_IO
VDD_IO
VDD_IO
VDD_IO
VDD_IO
VDD_IO
VDD_IO
HCI_RX
HCI_TX
HCI_RTS
HCI_CTS
AUD_FSYNC
AUD_CLK
AUD_IN
AUD_OUT
CL1.5_LDO_IN
MLDO_IN
SLOW_CLK
MLDO_OUT
MLDO_OUT
MLDO_OUT
MLDO_OUT
GND
GND
A6
nSHUTDOWN_1V8
TX_DBG
TP1
B24
A14
SHUTD
TX_DBG
NC
G
G
XTALP
XTALM
1
3
B4
A4
C19
10pF
GND
DIG_LDO_OUT
DIG_LDO_OUT
DIG_LDO_OUT
DIG_LDO_OUT
DIG_LDO_OUT
DIG_LDO_OUT
DIG_LDO_OUT
A2
A3
B15
B27
B26
B36
B35
XTALP/FREFP
XTALM/FREFM
C20
10pF
C4
0.1µF
GND
C5
0.1µF
GND
C6
0.1µF
GND
VBAT
MLD_OUT
B7
B2
A9
A5
B1
A8
A7
A12
26MHz
C3
0.1µF
B6
B5
SRAM_LDO_OUT
ADC_PPA_LDO_OUT
CL1.5_LDO_OUT
DCO_LDO_OUT
Y2
2
4
B25
B21
B22
B19
B18
A38
A34
A17
C7
1µF
SLO
C8
1µF
C9
1µF
ALO
CLO
DCLOl
GND
C10
0.1µF
GND
C11
0.1µF
GND
C12
0.1µF
GND
GND
GND
C13
0.1µF
GND
DIG_LDO_OUT
GND
CC2564CRV MR
C14
0.1µF
C15
0.47µF
C16
0.47µF
C17
0.1µF
GND
U1B
GND
A1
A10
A11
A13
A15
A16
A18
A19
A20
A21
A22
A23
A27
A30
A31
A36
A37
A39
A40
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
VSS_FREF
VSS_DCO
VSS
VSS
EPAD
GND
B31
B30
B29
B28
B23
B20
B17
B16
B14
B13
B12
B10
B9
GND
GND
GND
A10, A11, B9 and
B9 are GND for
improved RF
performance
B3
B11
GND
A28
A24
D1
MR
GND
Copyright © 2017, Texas Instruments Incorporated
Figure 7-1. Reference Schematics
44
Applications, Implementation, and Layout
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Table 7-1 lists the BOM for the VQFNP-MR package.
Table 7-1. Bill of Materials
QUANTITY
REFERENCE
DESIGNATOR
VALUE
1
ANT1
2.45-GHz Antenna
ANT_IIFA_CC2420_32mil_MIR
N/A
IIFA_CC2420
1
C1
22 pF
CAP, CERM, 22 pF, 50 V, ±5%, C0G/NP0, 0402
TDK
C1005C0G1H220J050BA
0 - DNP
C2
0.5 pF
CAP, CERM, 0.5 pF, 50 V, ±10%, C0G/NP0, 0402
MuRata
GRM1555C1HR50WA01
11
C3, C4, C5, C6, C10,
C11, C12, C13, C14,
C17, C18
0.1 µF
"Capacitor, ceramic; 0.1-μF
6.3-V 10% X7R 0402"
Kemet
C0402C104K9RACTU
3
C7, C8, C9
1 µF
"Capacitor, ceramic; 1.0-μF
6.3-V 10% X5R 0402"
Taiyo Yuden
JMK105BJ105KV-F
2
C15, C16
0.47 µF
"Capacitor, ceramic; 0.47-μF
6.3-V X5R ±10% 0402"
Taiyo Yuden
JMK105BJ474KV-F
2
C19, C20
10 pF
CAP, CERM, 10 pF, 50 V, ±5%, C0G/NP0, 0402
MuRata
GRM1555C1H100JA01D
1
FL1
2.45-GHz Center
Multilayer Band Pass Filter, SMD
MuRata
LFB212G45SG8C341
1
L1
0Ω
RES, 0, 5%, 0.063 W, 0402
Vishay-Dale
CRCW04020000Z0ED
1
R1
10k
RES, 10 k, 5%, 0.063 W, 0402
Vishay-Dale
CRCW040210K0JNED
1
U1
CC2564CRVM
CC2564C dual-mode Bluetooth controller
Texas Instruments
CC2564CRVM
1
Y1
XO Oscillator
XO Oscillator, 32.768 kHz, CMOS, 3.3 V, SMD
Abracon Corporation
ASH7K-32.768KHZ-T
1
Y2
Crystal
Crystal, 26 MHz, 8 pF, SMD
NDK
NX2016SA-26.000M-STD-CZS-2
DESCRIPTION
MANUFACTURER
MANUFACTURER
PART NUMBER
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7.2
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VQFNP-MR PCB Layout Guidelines
This section describes the PCB guidelines to speed up the PCB design using the CC256x VQFNP-MR
device. Following these guidelines ensures that the design will pass Bluetooth SIG certification and also
minimizes risk for regulatory certifications including FCC, ETSI, and CE. For more information, see
CC256x QFN PCB Guidelines.
7.2.1
Power Supply Guidelines
Guidelines for the power supply follow:
• The trace width must be at least 10 mils for the VBAT and VIO traces.
• The length of the traces must be as short as possible (pin to pin).
• Decoupling capacitors must be as close as possible to the QFN device:
– The MLDO_IN capacitor must be close to pin B5.
– The VDD_IO capacitor must be close to pins B18 and A17.
Guidelines for the LDOs follow:
• The trace width for the trace between x_LDO_x pins and decoupling capacitors is at least 5 mils;
where possible, the recommended trace width is 10 mils.
• Place the decoupling capacitor of MLDO_OUT (C20) as close as possible to pin A5.
• These capacitors must close to the following pins:
– The DIG_LDO_OUT capacitor must be close to ball B15.
– The DIG_LDO_OUT capacitor must be close to ball B27.
– The DIG_LDO_OUT capacitor must be close to ball B36.
• The DIG_LDO_OUT capacitor connected to ball B36 must be isolated from the top layer GND (see the
Low-Dropout Capacitors section in CC256x QFN PCB Guidelines).
• The decoupling capacitors for SRAM, ADCPPA, and CL1.5 LDO_OUT must be as close as possible to
their corresponding pins on the CC256x device.
• Place the device and capacitors together on the top side.
• The ground connection of each capacitor must be directly connected to solid ground layer (layer 2).
• The capacitor that is directly connected to pin A12 should be close to the device.
• Connect the DCO_LDO_OUT capacitor isolated from layer 1 ground directly to layer 2 solid ground.
Guidelines for the ground layer follow:
• Layer 2 must be a solid ground plane.
• Isolate VSS_FREF from ground on the top layer and route it directly to ground on the second layer
(see the Key VSS Ball section in CC256x QFN PCB Guidelines).
• Isolate VSS_DCO (ball B11) from ground. Include VSS_DCO in the illustration of the DCO_LDO_OUT
capacitor (see the DCO_LDO_OUT section in CC256x QFN PCB Guidelines).
• A minimum of 13 vias on the thermal pad are required to increase ground coupling.
• Connect VSS_FREF (ball B3) directly to solid ground, not to the thermal pad.
46
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SWRS199B – APRIL 2016 – REVISED JUNE 2020
User Interfaces
Guidelines for the UART follow:
• The trace width for the UART must be at least 5 mils.
• Run the four UART lines as a bus interface.
• Determine if clocks, DC supply, or RF traces are not near these UART traces.
• The ground plane on layer 2 is solid below these lines and there is ground around these traces on the
top layer.
Guidelines for the PCM follow:
• The trace width for the PCM must be at least 5 mils.
• Run the four PCM lines as a bus interface and approximately the same length.
• Determine if clocks, DC supply, RF traces, and LDO capacitors are not near these PCM traces.
• The ground plane on layer 2 is solid below these lines and there is ground around these traces on the
top layer.
Guidelines for TX_DBG follow:
• Check for an accessible test point on the board from TX_DBG pin H2.
7.2.3
Clock Interfaces
Guidelines for the slow clock follow:
• The trace width for the slow clock must be at least 5 mils.
• The signal lines for the slow clock must be as short as possible.
• The ground plane on layer 2 is solid below these lines and there is ground around these traces on the
top layer.
Guidelines for the fast clock follow:
• The trace width for the fast clock must be at least 5 mils.
• Ensure that crystal tuning capacitors are close to crystal pads.
• Make both traces (XTALM and XTALP) parallel as much as possible and approximately the same
length.
• The ground plane on layer 2 is solid below these lines and there is ground around these traces on the
top layer.
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7.2.4
www.ti.com
RF Interface
Guidelines for the RF Interface follow:
• TI recommends using an RF shield (not mandatory).
• Verify that RF traces are routed on the top layer and matched at 50 Ω with reference to ground.
• Route the RF line between these NC pins:
– NC_2 (A10)
– NC_3 (A11)
– NC_14 (B9)
– NC_15 (B10)
These NC pins are grounded for better RF isolation.
NOTE
These pins are NC at the chip level, but TI recommends grounding them on the PCB layout
for better RF isolation.
•
•
•
•
•
•
48
Ensure the area underneath the BPF pads is grounded on layer 1 and layer 2.
Keep RF_IN and RF_OUT of the BPF pads clear of any ground fill (see the RF Trace section in
CC256x QFN PCB Guidelines).
Follow guidelines specified in the vendor-specific antenna design guides (including placement of
antenna).
Follow guidelines specified in the vendor-specific BPF design guides.
Verify that the Bluetooth RF trace is a 50-Ω, impedance-controlled trace with reference to solid ground.
Ensure that the RF trace length is as short as possible.
Applications, Implementation, and Layout
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8 Device and Documentation Support
TI offers an extensive line of development tools. Tools and software to evaluate the performance of the
device, generate code, and develop solutions are listed in the following sections.
8.1
Third-Party Products Disclaimer
TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES
NOT CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR
SERVICES OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR
SERVICES, EITHER ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.
8.2
Tools and Software
Design Kits and Evaluation Modules
HCI Tester This intuitive, user-friendly TI tool is used to evaluate TI's Bluetooth chips and can be
downloaded as a complete package from the TI web site at WILINK-BT_WIFIWIRELESS_TOOLS. More specifically, the tool is used to configure the properties of the
Bluetooth chip through the Service Pack (SP) and also allows testing of RF performance.
Software
TI offers the flexibility to choose from a number of application processors with a royalty-free stack. For
more details on the different combinations, see the CC256x Getting Started Selection Guide.
For a complete listing of development-support tools, see the TI CC256x wiki. For information on pricing
and availability, contact the nearest TI field sales office or authorized distributor.
Device and Documentation Support
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8.3
www.ti.com
Device Nomenclature
To designate the stages in the product development cycle, TI assigns prefixes to the part numbers of all
microprocessors (MPUs) and support tools. Each device has one of three prefixes: X, P, or null (no prefix)
(for example, CC2564CRVMR). Texas Instruments recommends two of three possible prefix designators
for its support tools: TMDX and TMDS. These prefixes represent evolutionary stages of product
development from engineering prototypes (TMDX) through fully qualified production devices and tools
(TMDS).
Device development evolutionary flow:
X
Experimental device that is not necessarily representative of the final device's electrical
specifications and may not use production assembly flow.
P
Prototype device that is not necessarily the final silicon die and may not necessarily meet
final electrical specifications.
null
Production version of the silicon die that is fully qualified.
Support tool development evolutionary flow:
TMDX
Development-support product that has not yet completed Texas Instruments internal
qualification testing.
TMDS
Fully-qualified development-support product.
X and P devices and TMDX development-support tools are shipped against the following disclaimer:
"Developmental product is intended for internal evaluation purposes."
Production devices and TMDS development-support tools have been characterized fully, and the quality
and reliability of the device have been demonstrated fully. TI's standard warranty applies.
Predictions show that prototype devices (X or P) have a greater failure rate than the standard production
devices. Texas Instruments recommends that these devices not be used in any production system
because their expected end-use failure rate still is undefined. Only qualified production devices are to be
used.
TI device nomenclature also includes a suffix with the device family name. This suffix indicates the
package type (for example, RVM), and the temperature range (for example, blank is the default
commercial temperature range). Figure 8-1 provides a legend for reading the complete device name for
any CC2564CRVMR device.
For orderable part numbers of CC2564CRVMR devices in the RVM package types, see the Package
Option Addendum of this document, ti.com, or contact your TI sales representative.
CC2564C XXX X
Prefix
X = Experimental device
Blank = Qualified device
R = Large Reel
T = Small Reel
Package Designator
Generic Part Number
RVM = VQFNP-MR
Copyright © 2016, Texas Instruments Incorporated
Figure 8-1. CC2564C Device Nomenclature
50
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8.4
SWRS199B – APRIL 2016 – REVISED JUNE 2020
Documentation Support
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the
upper right corner, click on Alert me to register and receive a weekly digest of any product information that
has changed. For change details, review the revision history included in any revised document.
The current documentation that describes the DSP, related peripherals, and other technical collateral is
listed in the following.
Application Reports
Application Notes for CC2564C Bluetooth® 4.1 and 4.2 The CC2564C device is the successor of the
CC2564B device as a dual-mode Bluetooth® Classic and Bluetooth low energy chip. The
CC2564C adds new and significant capabilities to the CC2564B.
QFN/SON PCB Attachment Quad flatpack no leads (QFNs) and small-outline no leads (SONs) are
leadless packages with electrical connections made via lands on the bottom side of the
component to the surface of the connecting substrate (PCB, ceramic). This application report
presents users with introductory information about attaching QFN/SON devices to printed
circuit boards (PCBs).
User's Guides
CC2564B to CC2564C Migration Guide The CC2564C device is TI’s third generation of the CC2564
dual mode Bluetooth® and Bluetooth low energy single-chip solution. Support for both
Bluetooth 4.1 and Bluetooth 4.2 support is implemented.
CC256xC QFN EM User’s Guide This user's guide is intended for use with TI's Bluetooth® development
platform, the CC256xCQFN-EM board. This guide helps users quickly get started integrating
the board with TI's evaluation platforms and software SDKs. In addition, this user's guide
describes the components and configurations of the board so that users can quickly get
started using it for various Bluetooth applications. This guide provides information about the
module so that developers can use the board specifics to apply it to their applications.
Module information and capabilities, including pin descriptions as well as available software
and tools, enhance the user's out-of-box experience.
White Papers
CC256x Series: Why Classic Bluetooth® (BR/EDR)? Bluetooth® technology is a proven, robust, and
widely spread technology. According to Bluetooth SIG®, there are more than 8 billion
devices are in circulation, including a strong presence in approximately 95% of all existing
mobile phones and smartphones. This technology presents a complete solution for wirelessly
transmitting audio, voice, and data. Bluetooth is a well-defined protocol up to the application
level, which creates leading interoperability and compatibility between different devices and
manufacturers.
Which TI Bluetooth® Solution Should I Choose? Texas Instruments™ offers multiple Bluetooth®
solutions, so it might be confusing to choose the correct part. Whether you want to add
Bluetooth technology to an existing device or create a new Bluetooth product, the question
is: which TI device should be chosen?
Design Files
CC256x Reference Design Files
CC2564 Audio Sink Reference Design
CC256x Hardware Design Checklist
More Literature
TI Bluetooth® CC2564C Solution The TI dual-mode CC2564C solution is a complete Bluetooth® BR /
EDR / LE HCI or Bluetooth + Bluetooth low energy solution that reduces design effort and
enables fast time to market.
Dual-Mode Bluetooth® CC2564CQFN-EM Evaluation Board This quick start guide offers an overview
of the Dual-Mode Bluetooth® CC256XCQFN-EM evaluation board, including the required
hardware and software tools, and describes the basic settings. For more information on
using the CC256XCQFN-EM board, see the Dual-Mode Bluetooth® CC2564C Evaluation
Board User's Guide.
Device and Documentation Support
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Product Folder Links: CC2564C
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CC2564C
SWRS199B – APRIL 2016 – REVISED JUNE 2020
8.5
www.ti.com
Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help —
straight from the experts. Search existing answers or ask your own question to get the quick design help
you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications
and do not necessarily reflect TI's views; see TI's Terms of Use.
8.6
Trademarks
Texas Instruments, TI E2E are trademarks of Texas Instruments.
ARM7TDMI is a registered trademark of ARM Limited.
iPod is a registered trademark of Apple, Inc.
Bluetooth is a registered trademark of Bluetooth SIG, Inc.
All other trademarks are the property of their respective owners.
8.7
Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
8.8
Export Control Notice
Recipient agrees to not knowingly export or re-export, directly or indirectly, any product or technical data
(as defined by the U.S., EU, and other Export Administration Regulations) including software, or any
controlled product restricted by other applicable national regulations, received from disclosing party under
nondisclosure obligations (if any), or any direct product of such technology, to any destination to which
such export or re-export is restricted or prohibited by U.S. or other applicable laws, without obtaining prior
authorization from U.S. Department of Commerce and other competent Government authorities to the
extent required by those laws.
8.9
Glossary
TI Glossary This glossary lists and explains terms, acronyms, and definitions.
9 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the
most current data available for the designated devices. This data is subject to change without notice and
revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
52
Mechanical, Packaging, and Orderable Information
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Product Folder Links: CC2564C
Copyright © 2016–2020, Texas Instruments Incorporated
PACKAGE OPTION ADDENDUM
www.ti.com
29-Dec-2021
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
CC2564CRVMR
ACTIVE
VQFNP-MR
RVM
76
2500
RoHS & Green
SN
Level-3-260C-168 HR
-40 to 85
CC2564C
CC2564CRVMT
ACTIVE
VQFNP-MR
RVM
76
250
RoHS & Green
SN
Level-3-260C-168 HR
-40 to 85
CC2564C
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of