CSD18502KCS

Product Folder Sample & Buy Support & Community Tools & Software Technical Documents CSD18502KCS SLPS367B – AUGUST 2012 – REVISED JULY 2014 CSD18502KCS 40-V N-Channel NexFET™ Power MOSFET 1 Features • • • • • • • • 1 Product Summary Ultra-Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free TO-220 Plastic Package TA = 25°C UNIT Drain-to-Source Voltage 40 V Qg Gate Charge Total (10V) 52 nC Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage 8.4 nC VGS = 4.5 V 3.3 mΩ VGS = 10 V 2.4 mΩ 1.8 V Ordering Information(1) Device Package Media Qty Ship CSD18502KCS TO-220 Plastic Package Tube 50 Tube 2 Applications • • • TYPICAL VALUE VDS DC-DC Conversion Secondary Side Synchronous Rectifier Motor Control (1) For all available packages, see the orderable addendum at the end of the data sheet. Absolute Maximum Ratings 3 Description This 2.4 mΩ, 40 V, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications. TA = 25°C VALUE UNIT VDS Drain-to-Source Voltage 40 V VGS Gate-to-Source Voltage ±20 V Continuous Drain Current (Package limited) 100 Continuous Drain Current (Silicon limited), TC = 25°C 212 Continuous Drain Current (Silicon limited), TC = 100°C 150 IDM Pulsed Drain Current (1) 400 A PD Power Dissipation 259 W TJ, Tstg Operating Junction and Storage Temperature Range –55 to 175 °C EAS Avalanche Energy, single pulse ID = 81 A, L = 0.1 mH, RG = 25 Ω 330 mJ Drain (Pin 2) ID Gate (Pin 1) Source (Pin 3) A (1) Max RθJC = 0.6ºC/W, pulse duration ≤100 μs, duty cycle ≤1% RDS(on) vs VGS Gate Charge 10 TC = 25°C Id = 100A TC = 125ºC Id = 100A 10 VGS - Gate-to-Source Voltage (V) RDS(on) - On-State Resistance (mΩ) 12 8 6 4 2 0 0 2 4 6 8 10 12 14 16 VGS - Gate-to- Source Voltage (V) 18 20 G001 ID = 100A VDS = 20V 8 6 4 2 0 0 5 10 15 20 25 30 35 40 Qg - Gate Charge (nC) 45 50 55 G001 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CSD18502KCS SLPS367B – AUGUST 2012 – REVISED JULY 2014 www.ti.com Table of Contents 1 2 3 4 5 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Specifications......................................................... 1 1 1 2 3 5.1 Electrical Characteristics........................................... 3 5.2 Thermal Information .................................................. 3 5.3 Typical MOSFET Characteristics .............................. 4 6 Device and Documentation Support.................... 7 6.1 Trademarks ............................................................... 7 6.2 Electrostatic Discharge Caution ................................ 7 6.3 Glossary .................................................................... 7 7 Mechanical, Packaging, and Orderable Information ............................................................. 8 7.1 KCS Package Dimensions........................................ 8 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision A (October 2012) to Revision B Page • Increased the TC = 25º continuous drain current to 212 A .................................................................................................... 1 • Increased the TC = 125º continuous drain current to 150 A .................................................................................................. 1 • Increased the pulsed drain current to 400 A ......................................................................................................................... 1 • Increased the max power dissipation to 259 W ..................................................................................................................... 1 • Increased the max operating junction and storage temperature to 175º ............................................................................... 1 • Updated the pulsed current conditions .................................................................................................................................. 1 • Updated Figure 1 from a normalized RθJA to an RθJC curve ................................................................................................... 4 • Updated Figure 6 to extend to 175°C .................................................................................................................................... 5 • Updated Figure 8 to extend to 175°C .................................................................................................................................... 5 • Updated the SOA in Figure 10 .............................................................................................................................................. 6 • Updated Figure 12 to extend to 175°C .................................................................................................................................. 6 Changes from Original (August 2012) to Revision A Page • Changed the Transconductance TYP value From: 149 S To: 138 S..................................................................................... 3 • Changed RθJA From: 65°C/W To: 62°C/W.............................................................................................................................. 3 2 Submit Documentation Feedback Copyright © 2012–2014, Texas Instruments Incorporated Product Folder Links: CSD18502KCS CSD18502KCS www.ti.com SLPS367B – AUGUST 2012 – REVISED JULY 2014 5 Specifications 5.1 Electrical Characteristics (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 250 μA IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 32 V 1 μA IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = 20 V 100 nA VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = 250 μA RDS(on) Drain-to-Source On Resistance gƒs Transconductance 40 1.5 V 1.8 2.1 V VGS = 4.5 V, ID = 100 A 3.3 4.3 mΩ VGS = 10 V, ID = 100 A 2.4 2.9 mΩ VDS = 20 V, ID = 100 A 138 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Series Gate Resistance Qg Gate Charge Total (4.5 V) Qg Gate Charge Total (10 V) Qgd Gate Charge Gate-to-Drain Qgs Gate Charge Gate-to-Source Qg(th) Gate Charge at Vth Qoss Output Charge td(on) VGS = 0 V, VDS = 20 V, ƒ = 1 MHz VDS = 20 V, ID = 100 A 3900 4680 pF 900 1080 pF 21 26 pF 1.2 2.4 Ω 25 30 nC 52 62 nC 8.4 nC 10.3 nC 7.5 nC 52 nC Turn On Delay Time 11 ns tr Rise Time 7.3 ns td(off) Turn Off Delay Time 33 ns tƒ Fall Time 9.3 ns VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 10 V, IDS = 100 A, RG = 0 Ω DIODE CHARACTERISTICS VSD Diode Forward Voltage Qrr Reverse Recovery Charge trr Reverse Recovery Time ISD = 100 A, VGS = 0 V 0.8 VDS= 20 V, IF = 100A, di/dt = 300A/μs 105 1 nC V 48 ns 5.2 Thermal Information (TA = 25°C unless otherwise stated) THERMAL METRIC MIN TYP MAX RθJC Junction-to-Case Thermal Resistance 0.6 RθJA Junction-to-Ambient Thermal Resistance 62 Submit Documentation Feedback Copyright © 2012–2014, Texas Instruments Incorporated Product Folder Links: CSD18502KCS UNIT °C/W 3 CSD18502KCS SLPS367B – AUGUST 2012 – REVISED JULY 2014 www.ti.com 5.3 Typical MOSFET Characteristics (TA = 25°C unless otherwise stated) 180 200 160 180 IDS - Drain-to-Source Current (A) IDS - Drain-to-Source Current (A) Figure 1. Transient Thermal Impedance 140 120 100 80 60 40 VGS =10V VGS =6.5V VGS =4.5V 20 0 0 0.5 1 VDS - Drain-to-Source Voltage (V) 1.5 VDS = 5V 160 140 120 100 80 60 TC = 125°C TC = 25°C TC = −55°C 40 20 0 0 G001 Figure 2. Saturation Characteristics 4 Submit Documentation Feedback 1 2 3 4 VGS - Gate-to-Source Voltage (V) 5 G001 Figure 3. Transfer Characteristics Copyright © 2012–2014, Texas Instruments Incorporated Product Folder Links: CSD18502KCS CSD18502KCS www.ti.com SLPS367B – AUGUST 2012 – REVISED JULY 2014 Typical MOSFET Characteristics (continued) (TA = 25°C unless otherwise stated) 50000 Ciss = Cgd + Cgs Coss = Cds + Cgd Crss = Cgd ID = 100A VDS = 20V 10000 8 C − Capacitance (pF) VGS - Gate-to-Source Voltage (V) 10 6 4 1000 100 2 0 0 5 10 15 20 25 30 35 40 Qg - Gate Charge (nC) 45 50 10 55 0 10 20 30 VDS - Drain-to-Source Voltage (V) G001 Figure 4. Gate Charge ID = 250uA 2.2 2 1.8 1.6 1.4 1.2 1 0.8 RDS(on) - On-State Resistance (mΩ) VGS(th) - Threshold Voltage (V) 12 0.6 −75 −50 −25 Figure 6. Threshold Voltage vs. Temperature TC = 25°C Id = 100A TC = 125ºC Id = 100A 10 8 6 4 2 0 0 25 50 75 100 125 150 175 200 TC - Case Temperature (ºC) G001 0 2 4 6 8 10 12 14 16 VGS - Gate-to- Source Voltage (V) 18 20 G001 Figure 7. On-State Resistance vs. Gate-to-Source Voltage 2.2 100 VGS = 4.5V VGS = 10V ISD − Source-to-Drain Current (A) Normalized On-State Resistance G001 Figure 5. Capacitance 2.4 2 40 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 −75 −50 −25 TC = 25°C TC = 125°C 10 1 0.1 0.01 0.001 ID = 100A 0 25 50 75 100 125 150 175 200 TC - Case Temperature (ºC) G001 Figure 8. Normalized On-State Resistance vs. Temperature 0.0001 0 0.2 0.4 0.6 0.8 VSD − Source-to-Drain Voltage (V) 1 G001 Figure 9. Typical Diode Forward Voltage Submit Documentation Feedback Copyright © 2012–2014, Texas Instruments Incorporated Product Folder Links: CSD18502KCS 5 CSD18502KCS SLPS367B – AUGUST 2012 – REVISED JULY 2014 www.ti.com Typical MOSFET Characteristics (continued) (TA = 25°C unless otherwise stated) 1000 100 10us 100us 1ms 10ms DC IAV - Peak Avalanche Current (A) IDS - Drain-to-Source Current (A) 5000 100 10 1 Single Pulse Max RthetaJC = 0.6ºC/W 0.1 0.1 1 10 VDS - Drain-to-Source Voltage (V) 100 TC = 25ºC TC = 125ºC 10 0.01 G001 Figure 10. Maximum Safe Operating Area 0.1 TAV - Time in Avalanche (mS) 1 G001 Figure 11. Single Pulse Unclamped Inductive Switching IDS - Drain- to- Source Current (A) 120 100 80 60 40 20 0 −50 −25 0 25 50 75 100 125 150 175 200 TC - Case Temperature (ºC) G001 Figure 12. Maximum Drain Current vs. Temperature 6 Submit Documentation Feedback Copyright © 2012–2014, Texas Instruments Incorporated Product Folder Links: CSD18502KCS CSD18502KCS www.ti.com SLPS367B – AUGUST 2012 – REVISED JULY 2014 6 Device and Documentation Support 6.1 Trademarks NexFET is a trademark of Texas Instruments. 6.2 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 6.3 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. Submit Documentation Feedback Copyright © 2012–2014, Texas Instruments Incorporated Product Folder Links: CSD18502KCS 7 CSD18502KCS SLPS367B – AUGUST 2012 – REVISED JULY 2014 www.ti.com 7 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 7.1 KCS Package Dimensions Notes: 1. All linear dimensions are in inches. 2. This drawing is subject to change without notice. 3. Lead dimensions are not controlled within 'C' area 4. All lead dimensions apply before solder dip. 5. The center lead is in electrical contact with the mounting tab. 6. The chamfer at 'F' is optional. 7. Thermal pad contour at 'G' optional with these dimensions 8. 'H' falls within JEDEC TO-220 variation AB, except minimum lead thickness, minimum exposed pad length, and maximum body length. Pin Configuration Position 8 Designation Pin 1 Gate Pin 2 / Tab Drain Pin 3 Source Submit Documentation Feedback Copyright © 2012–2014, Texas Instruments Incorporated Product Folder Links: CSD18502KCS PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) (3) Device Marking (4/5) (6) CSD18502KCS ACTIVE TO-220 KCS 3 50 RoHS-Exempt & Green SN N / A for Pkg Type -55 to 175 CSD18502KCS (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of