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CSD18510KCS
SLPS663A – MARCH 2017 – REVISED JULY 2017
CSD18510KCS 40-V N-Channel NexFET™ Power MOSFET
1 Features
•
•
•
•
•
•
•
•
1
Product Summary
Low Qg and Qgd
Low RDS(ON)
Low-Thermal Resistance
Avalanche Rated
Lead-Free Terminal Plating
RoHS Compliant
Halogen Free
TO-220 Plastic Package
TA = 25°C
UNIT
Drain-to-Source Voltage
40
V
Qg
Gate Charge Total (10 V)
118
nC
Qgd
Gate Charge Gate-to-Drain
RDS(on)
Drain-to-Source On-Resistance
VGS(th)
Threshold Voltage
21
nC
VGS = 4.5 V
2.0
VGS = 10 V
1.4
mΩ
1.7
V
Device Information(1)
DEVICE
2 Applications
•
•
TYPICAL VALUE
VDS
MEDIA
CSD18510KCS
Secondary Side Synchronous Rectifier
Motor Control
Tube
QTY
PACKAGE
SHIP
50
TO-220
Plastic Package
Tube
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
3 Description
This 40-V, 1.4-mΩ, TO-220 NexFET™ power
MOSFET is designed to minimize losses in power
conversion applications.
Absolute Maximum Ratings
TA = 25°C
VALUE
UNIT
VDS
Drain-to-Source Voltage
40
V
VGS
Gate-to-Source Voltage
±20
V
Continuous Drain Current (Package Limited)
200
Continuous Drain Current (Silicon Limited),
TC = 25°C
288
Continuous Drain Current (Silicon Limited),
TC = 100°C
204
IDM
Pulsed Drain Current(1)
400
A
PD
Power Dissipation
250
W
TJ,
Tstg
Operating Junction,
Storage Temperature
–55 to 175
°C
EAS
Avalanche Energy, Single Pulse
ID = 81 A, L = 0.1 mH, RG = 25 Ω
328
mJ
Drain (Pin 2)
ID
Gate
(Pin 1)
Source (Pin 3)
A
(1) Max RθJC = 0.6°C/W, pulse duration ≤ 100 μs, duty cycle ≤
1%.
RDS(on) vs VGS
Gate Charge
10
TC = 25°C, I D = 100 A
TC = 125°C, I D = 100 A
7
VGS - Gate-to-Source Voltage (V)
RDS(on) - On-State Resistance (m:)
8
6
5
4
3
2
1
0
ID = 100 A, VDS = 20 V
9
8
7
6
5
4
3
2
1
0
0
2
4
6
8
10
12
14
16
VGS - Gate-to-Source Voltage (V)
18
20
D007
0
20
40
60
80
Qg - Gate Charge (nC)
100
120
D004
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
CSD18510KCS
SLPS663A – MARCH 2017 – REVISED JULY 2017
www.ti.com
Table of Contents
1
2
3
4
5
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Specifications.........................................................
1
1
1
2
3
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics.............................. 4
6
Device and Documentation Support.................... 7
6.1
6.2
6.3
6.4
6.5
7
Receiving Notification of Documentation Updates....
Community Resources..............................................
Trademarks ...............................................................
Electrostatic Discharge Caution ................................
Glossary ....................................................................
7
7
7
7
7
Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1 KCS Package Dimensions........................................ 8
4 Revision History
Changes from Original (March 2017) to Revision A
•
2
Page
Corrected package type in Features section ......................................................................................................................... 1
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SLPS663A – MARCH 2017 – REVISED JULY 2017
5 Specifications
5.1 Electrical Characteristics
TA = 25°C (unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
STATIC CHARACTERISTICS
BVDSS
Drain-to-source voltage
VGS = 0 V, ID = 250 μA
IDSS
Drain-to-source leakage current
VGS = 0 V, VDS = 32 V
1
μA
IGSS
Gate-to-source leakage current
VDS = 0 V, VGS = 20 V
100
nA
VGS(th)
Gate-to-source threshold voltage
VDS = VGS, ID = 250 μA
V
RDS(on)
Drain-to-source on-resistance
gfs
Transconductance
40
1.4
V
1.7
2.3
VGS = 4.5 V, ID = 100 A
2.0
2.6
VGS = 10 V, ID = 100 A
1.4
1.7
VDS = 4 V, ID = 100 A
330
mΩ
S
DYNAMIC CHARACTERISTICS
Ciss
Input capacitance
Coss
Output capacitance
8770
11400
pF
832
1080
pF
Crss
RG
Reverse transfer capacitance
424
551
pF
Series gate resistance
0.9
1.8
Ω
Qg
Gate charge total (4.5 V)
58
75
nC
Qg
Gate charge total (10 V)
118
153
nC
Qgd
Gate charge gate-to-drain
Qgs
Gate charge gate-to-source
Qg(th)
Gate charge at Vth
Qoss
Output charge
td(on)
Turnon delay time
tr
Rise time
td(off)
Turnoff delay time
tf
Fall time
VGS = 0 V, VDS = 20 V, ƒ = 1 MHz
VDS = 20 V, ID = 100 A
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 10 V,
IDS = 100 A, RG = 0 Ω
21
nC
28
nC
15
nC
35
nC
10
ns
8
ns
29
ns
8
ns
DIODE CHARACTERISTICS
VSD
Diode forward voltage
Qrr
Reverse recovery charge
trr
Reverse recovery time
ISD = 100 A, VGS = 0 V
0.85
VDS= 20 V, IF = 100 A,
di/dt = 300 A/μs
70
1.0
nC
V
41
ns
5.2 Thermal Information
TA = 25°C (unless otherwise stated)
MAX
UNIT
RθJC
Junction-to-case thermal resistance
THERMAL METRIC
MIN
TYP
0.6
°C/W
RθJA
Junction-to-ambient thermal resistance
62
°C/W
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SLPS663A – MARCH 2017 – REVISED JULY 2017
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5.3 Typical MOSFET Characteristics
TA = 25°C (unless otherwise stated)
200
200
180
180
IDS - Drain-to-Source Current (A)
IDS - Drain-to-Source Current (A)
Figure 1. Transient Thermal Impedance
160
140
120
100
80
60
40
VGS = 4.5 V
VGS = 6 V
VGS = 10 V
20
160
140
120
100
80
60
40
TC = 125°C
TC = 25°C
TC = -55°C
20
0
0
0
0.05
0.1
0.15 0.2 0.25 0.3 0.35 0.4
VDS - Drain-to-Source Voltage (V)
0.45
0.5
0
0.5
D002
1
1.5
2
2.5
3
VGS - Gate-to-Source Voltage (V)
3.5
4
D003
VDS = 5 V
Figure 2. Saturation Characteristics
4
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Figure 3. Transfer Characteristics
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SLPS663A – MARCH 2017 – REVISED JULY 2017
Typical MOSFET Characteristics (continued)
TA = 25°C (unless otherwise stated)
100000
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
9
8
C - Capacitance (pF)
VGS - Gate-to-Source Voltage (V)
10
7
6
5
4
3
10000
1000
2
1
100
0
0
20
40
60
80
Qg - Gate Charge (nC)
VDS = 20 V
100
0
120
4
8
D004
Figure 4. Gate Charge
40
D005
Figure 5. Capacitance
8
RDS(on) - On-State Resistance (m:)
2.1
VGS(th) - Threshold Voltage (V)
36
ID = 100 A
2.3
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
0.3
-75
12
16
20
24
28
32
VDS - Drain-to-Source Voltage (V)
TC = 25°C, I D = 100 A
TC = 125°C, I D = 100 A
7
6
5
4
3
2
1
0
-50
-25
0
25 50 75 100 125 150 175 200
TC - Case Temperature (°C)
D012
D006
0
2
4
6
8
10
12
14
16
VGS - Gate-to-Source Voltage (V)
18
20
D007
ID = 250 µA
Figure 6. Threshold Voltage vs Temperature
Figure 7. On-State Resistance vs Gate-to-Source Voltage
100
2
VGS = 4.5 V
VGS = 10 V
ISD - Source-to-Drain Current (A)
Normalized On-State Resistance
2.2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-75
TC = 25°C
TC = 125°C
10
1
0.1
0.01
0.001
0.0001
-50
-25
0
25 50 75 100 125 150 175 200
TC - Case Temperature (°C)
D008
0
0.1
0.2
0.3 0.4 0.5 0.6 0.7 0.8
VSD - Source-to-Drain Voltage (V)
0.9
1
D009
ID = 100 A
Figure 8. Normalized On-State Resistance vs Temperature
Figure 9. Typical Diode Forward Voltage
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SLPS663A – MARCH 2017 – REVISED JULY 2017
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Typical MOSFET Characteristics (continued)
TA = 25°C (unless otherwise stated)
100
IAV - Peak Avalanche Current (A)
IDS - Drain-to-Source Current (A)
1000
100
10
1
DC
10 ms
0.1
0.1
1 ms
100 µs
1
10
VDS - Drain-to-Source Voltage (V)
100
10
TC = 25qC
TC = 125qC
1
0.01
0.1
TAV - Time in Avalanche (ms)
D010
1
D011
Single pulse, max RθJC = 0.6°C/W
Figure 10. Maximum Safe Operating Area
Figure 11. Single Pulse Unclamped Inductive Switching
IDS - Drain-to-Source Current (A)
240
200
160
120
80
40
0
-50
-25
0
25
50
75 100 125
TC - Case Temperature (°C)
150
175
200
D012
Max RθJC = 0.6°C/W
Figure 12. Maximum Drain Current vs Temperature
6
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SLPS663A – MARCH 2017 – REVISED JULY 2017
6 Device and Documentation Support
6.1 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
6.2 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
6.3 Trademarks
NexFET, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
6.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
6.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
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CSD18510KCS
SLPS663A – MARCH 2017 – REVISED JULY 2017
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7 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
7.1 KCS Package Dimensions
Table 1. Pin Configuration
8
POSITION
DESIGNATION
Pin 1
Gate
Pin 2 / Tab
Drain
Pin 3
Source
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
(3)
Device Marking
(4/5)
(6)
CSD18510KCS
ACTIVE
TO-220
KCS
3
50
RoHS-Exempt
& Green
SN
N / A for Pkg Type
-55 to 175
CSD18510KCS
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of