CSD18510KTT

Order Now Product Folder Support & Community Tools & Software Technical Documents CSD18510KTT SLPS638A – NOVEMBER 2016 – REVISED JANUARY 2017 CSD18510KTT 40-V N-Channel NexFET™ Power MOSFET 1 Features • • • • • • • 1 Product Summary Ultra-Low Qg and Qgd Low-Thermal Resistance Avalanche Rated Lead-Free Terminal Plating RoHS Compliant Halogen Free D2PAK Plastic Package TA = 25°C TYPICAL VALUE Drain-to-Source Voltage 40 V Qg Gate Charge Total (10 V) 119 nC Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage Secondary Side Synchronous Rectifier Motor Control DEVICE QTY CSD18510KTT 500 CSD18510KTTT 3 Description 2 This 40-V, 1.4-mΩ, D PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications. . 21 nC VGS = 4.5 V 2.0 VGS = 10 V 1.4 mΩ 1.7 V Device Information(1) 2 Applications • • UNIT VDS Drain (Pin 2) Source (Pin 3) . PACKAGE SHIP 13-Inch Reel D2PAK Plastic Package Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet. Absolute Maximum Ratings TA = 25°C VALUE UNIT VDS Drain-to-Source Voltage 40 V VGS Gate-to-Source Voltage ±20 V Continuous Drain Current (Package Limited) 200 Continuous Drain Current (Silicon Limited), TC = 25°C 274 Continuous Drain Current (Silicon Limited), TC = 100°C 193 IDM Pulsed Drain Current(1) 400 A PD Power Dissipation 250 W TJ, Tstg Operating Junction, Storage Temperature –55 to 175 °C EAS Avalanche Energy, Single Pulse ID = 81 A, L = 0.1 mH, RG = 25 Ω 328 mJ ID Gate (Pin 1) 50 MEDIA A (1) Max RθJC = 0.6°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%. RDS(on) vs VGS Gate Charge 10 TC = 25°C, I D = 100 A TC = 125°C, I D = 100 A 7 VGS - Gate-to-Source Voltage (V) RDS(on) - On-State Resistance (m:) 8 6 5 4 3 2 1 0 ID = 100 A, VDS = 20 V 9 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 VGS - Gate-to-Source Voltage (V) 18 20 D007 0 20 40 60 80 Qg - Gate Charge (nC) 100 120 D004 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CSD18510KTT SLPS638A – NOVEMBER 2016 – REVISED JANUARY 2017 www.ti.com Table of Contents 1 2 3 4 5 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Specifications......................................................... 1 1 1 2 3 5.1 Electrical Characteristics........................................... 3 5.2 Thermal Information .................................................. 3 5.3 Typical MOSFET Characteristics.............................. 4 6 Device and Documentation Support.................... 7 6.2 6.3 6.4 6.5 7 Community Resources.............................................. Trademarks ............................................................... Electrostatic Discharge Caution ................................ Glossary .................................................................... 7 7 7 7 Mechanical, Packaging, and Orderable Information ............................................................. 8 7.1 KTT Package Dimensions ........................................ 8 7.2 Recommended PCB Pattern..................................... 9 7.3 Recommended Stencil Opening (0.125 mm Stencil Thickness).................................................................. 9 6.1 Receiving Notification of Documentation Updates.... 7 4 Revision History Changes from Original (November 2016) to Revision A Page • Changed silicon current limit, TC = 25°C from 237 A : to 274 A in the Absolute Maximum Ratings table............................. 1 • Changed silicon current limit, TC = 100°C from 167 A : to 193 A in the Absolute Maximum Ratings table........................... 1 • Changed max power dissipation from 188 W : to 250 W in the Absolute Maximum Ratings table ....................................... 1 • Changed the charge values in the Dynamic Characteristics section of the Electrical Characteristics table.......................... 3 • Changed max RθJC from 0.8°C/W : to 0.6°C/W in the Thermal Information table .................................................................. 3 • Changed Figure 4 in the Typical MOSFET Characteristics section to reflect updated gate charges .................................... 4 2 Submit Documentation Feedback Copyright © 2016–2017, Texas Instruments Incorporated Product Folder Links: CSD18510KTT CSD18510KTT www.ti.com SLPS638A – NOVEMBER 2016 – REVISED JANUARY 2017 5 Specifications 5.1 Electrical Characteristics TA = 25°C (unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA IDSS Drain-to-source leakage current VGS = 0 V, VDS = 32 V 1 μA IGSS Gate-to-source leakage current VDS = 0 V, VGS = 20 V 100 nA VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 μA V RDS(on) Drain-to-source on resistance gfs Transconductance 40 1.4 V 1.7 2.3 VGS = 4.5 V, ID = 100 A 2.0 2.6 VGS = 10 V, ID = 100 A 1.4 1.7 VDS = 4 V, ID = 100 A 330 mΩ S DYNAMIC CHARACTERISTICS Ciss Input capacitance Coss Output capacitance 8770 11400 pF 832 1080 pF Crss RG Reverse transfer capacitance 424 551 pF Series gate resistance 0.9 1.8 Ω Qg Gate charge total (4.5 V) 58 75 nC Qg Gate charge total (10 V) 118 153 nC Qgd Gate charge gate-to-drain Qgs Gate charge gate-to-source Qg(th) Gate charge at Vth Qoss Output charge td(on) Turnon delay time tr Rise time td(off) Turnoff delay time tf Fall time VGS = 0 V, VDS = 20 V, ƒ = 1 MHz VDS = 20 V, ID = 100 A VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 10 V, IDS = 100 A, RG = 0 Ω 21 nC 28 nC 15 nC 35 nC 10 ns 8 ns 29 ns 8 ns DIODE CHARACTERISTICS VSD Diode forward voltage Qrr Reverse recovery charge trr Reverse recovery time ISD = 100 A, VGS = 0 V 0.85 VDS= 20 V, IF = 100 A, di/dt = 300 A/μs 70 1.0 nC V 41 ns 5.2 Thermal Information TA = 25°C (unless otherwise stated) MAX UNIT RθJC Junction-to-case thermal resistance THERMAL METRIC MIN TYP 0.6 °C/W RθJA Junction-to-ambient thermal resistance 62 °C/W Submit Documentation Feedback Copyright © 2016–2017, Texas Instruments Incorporated Product Folder Links: CSD18510KTT 3 CSD18510KTT SLPS638A – NOVEMBER 2016 – REVISED JANUARY 2017 www.ti.com 5.3 Typical MOSFET Characteristics TA = 25°C (unless otherwise stated) 200 200 180 180 IDS - Drain-to-Source Current (A) IDS - Drain-to-Source Current (A) Figure 1. Transient Thermal Impedance 160 140 120 100 80 60 40 VGS = 4.5 V VGS = 6 V VGS = 10 V 20 160 140 120 100 80 60 40 TC = 125°C TC = 25°C TC = -55°C 20 0 0 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 VDS - Drain-to-Source Voltage (V) 0.45 0.5 0 0.5 D002 1 1.5 2 2.5 3 VGS - Gate-to-Source Voltage (V) 3.5 4 D003 VDS = 5 V Figure 2. Saturation Characteristics 4 Submit Documentation Feedback Figure 3. Transfer Characteristics Copyright © 2016–2017, Texas Instruments Incorporated Product Folder Links: CSD18510KTT CSD18510KTT www.ti.com SLPS638A – NOVEMBER 2016 – REVISED JANUARY 2017 Typical MOSFET Characteristics (continued) TA = 25°C (unless otherwise stated) 100000 Ciss = Cgd + Cgs Coss = Cds + Cgd Crss = Cgd 9 8 C - Capacitance (pF) VGS - Gate-to-Source Voltage (V) 10 7 6 5 4 3 10000 1000 2 1 100 0 0 20 40 60 80 Qg - Gate Charge (nC) VDS = 20 V 100 0 120 4 8 D004 Figure 4. Gate Charge 40 D005 Figure 5. Capacitance 8 RDS(on) - On-State Resistance (m:) 2.1 VGS(th) - Threshold Voltage (V) 36 ID = 100 A 2.3 1.9 1.7 1.5 1.3 1.1 0.9 0.7 0.5 0.3 -75 12 16 20 24 28 32 VDS - Drain-to-Source Voltage (V) TC = 25°C, I D = 100 A TC = 125°C, I D = 100 A 7 6 5 4 3 2 1 0 -50 -25 0 25 50 75 100 125 150 175 200 TC - Case Temperature (°C) D012 D006 0 2 4 6 8 10 12 14 16 VGS - Gate-to-Source Voltage (V) 18 20 D007 ID = 250 µA Figure 6. Threshold Voltage vs Temperature Figure 7. On-State Resistance vs Gate-to-Source Voltage 100 2 VGS = 4.5 V VGS = 10 V ISD - Source-to-Drain Current (A) Normalized On-State Resistance 2.2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -75 TC = 25°C TC = 125°C 10 1 0.1 0.01 0.001 0.0001 -50 -25 0 25 50 75 100 125 150 175 200 TC - Case Temperature (°C) D008 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VSD - Source-to-Drain Voltage (V) 0.9 1 D009 ID = 100 A Figure 8. Normalized On-State Resistance vs Temperature Figure 9. Typical Diode Forward Voltage Submit Documentation Feedback Copyright © 2016–2017, Texas Instruments Incorporated Product Folder Links: CSD18510KTT 5 CSD18510KTT SLPS638A – NOVEMBER 2016 – REVISED JANUARY 2017 www.ti.com Typical MOSFET Characteristics (continued) TA = 25°C (unless otherwise stated) 100 IAV - Peak Avalanche Current (A) IDS - Drain-to-Source Current (A) 1000 100 10 1 DC 10 ms 1 ms 0.1 0.1 100 µs 10 µs 1 10 VDS - Drain-to-Source Voltage (V) 100 10 TC = 25qC TC = 125qC 1 0.01 0.1 TAV - Time in Avalanche (ms) D010 1 D011 Single pulse, max RθJC = 0.6°C/W Figure 10. Maximum Safe Operating Area Figure 11. Single Pulse Unclamped Inductive Switching IDS - Drain-to-Source Current (A) 240 200 160 120 80 40 0 -50 -25 0 25 50 75 100 125 TC - Case Temperature (°C) 150 175 200 D012 Max RθJC = 0.6°C/W Figure 12. Maximum Drain Current vs Temperature 6 Submit Documentation Feedback Copyright © 2016–2017, Texas Instruments Incorporated Product Folder Links: CSD18510KTT CSD18510KTT www.ti.com SLPS638A – NOVEMBER 2016 – REVISED JANUARY 2017 6 Device and Documentation Support 6.1 Receiving Notification of Documentation Updates To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document. 6.2 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 6.3 Trademarks NexFET, E2E, PowerPAD are trademarks of Texas Instruments. All other trademarks are the property of their respective owners. 6.4 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 6.5 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. Submit Documentation Feedback Copyright © 2016–2017, Texas Instruments Incorporated Product Folder Links: CSD18510KTT 7 CSD18510KTT SLPS638A – NOVEMBER 2016 – REVISED JANUARY 2017 www.ti.com 7 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 7.1 KTT Package Dimensions 15.5 14.7 9.25 9.05 A B 3 10.26 10.06 2X 5.08 2 1 2[.0]X 1.36 1.23 2[.0]X 0.9 0.77 1.75 MAX 0.25 C A B 1.4 1.17 0.47 0.34 C 4.7 4.4 8 0 0.25 0 1.32 1.22 2.6 2 0.25 GAGE PLANE 7.48 7.08 8° 0° 8.55 8.15 0.25 GAGE PLANE NOTE 3 2.6 2 OPTIONAL LEAD FORM EXPOSED THERMAL PAD Notes: 1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M. 2. This drawing is subject to change without notice. 3. Features may not exist and shape may vary per different assembly sites. Table 1. Pin Configuration POSITION 8 DESIGNATION Pin 1 Gate Pin 2 / Tab Drain Pin 3 Source Submit Documentation Feedback Copyright © 2016–2017, Texas Instruments Incorporated Product Folder Links: CSD18510KTT CSD18510KTT www.ti.com SLPS638A – NOVEMBER 2016 – REVISED JANUARY 2017 7.2 Recommended PCB Pattern PKG (3.4) (6.9) (R0.05) TYP PKG SYMM (5.08) (8.55) 2X (1.05) 2X (3.82) (7.48)   0.07 MAX ALL AROUND SOLDER MASK OPENING 0.07 MIN ALL AROUND METAL SOLDER MASK OPENING METAL UNDER SOLDER MASK SOLDER MASK DEFINED NON SOLDER MASK DEFINED For recommended circuit layout for PCB designs, see Reducing Ringing Through PCB Layout Techniques (SLPA005). 7.3 Recommended Stencil Opening (0.125 mm Stencil Thickness) (1.17) TYP 42X (0.97) (0.48) TYP 2X (3.82) 2X (1.05) 42X (0.95) (R0.05) TYP (1.15) TYP SYMM (5.08) (6.9) PKG Notes:   1. This package is designed to be soldered to a thermal pad on the board. See PowerPAD™ Thermally  Enhanced Package (SLMA002) and PowerPAD™ Made Easy (SLMA004) for more information.   2. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate design recommendations. 3. Board assembly site may have different recommendations for stencil design. Submit Documentation Feedback Copyright © 2016–2017, Texas Instruments Incorporated Product Folder Links: CSD18510KTT 9 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) (3) Device Marking (4/5) (6) CSD18510KTT ACTIVE DDPAK/ TO-263 KTT 3 500 RoHS-Exempt & Green SN Level-2-260C-1 YEAR -55 to 175 CSD18510KTT CSD18510KTTT ACTIVE DDPAK/ TO-263 KTT 3 50 RoHS-Exempt & Green SN Level-2-260C-1 YEAR -55 to 175 CSD18510KTT (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of