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CSD18537NQ5A
SLPS391B – JUNE 2013 – REVISED JULY 2014
CSD18537NQ5A 60-V N-Channel NexFET™ Power MOSFETs
1 Features
•
•
•
•
•
•
•
1
Product Summary
Ultra-Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5 mm × 6 mm Plastic Package
TA = 25°C
TYPICAL VALUE
Drain-to-Source Voltage
60
V
Qg
Gate Charge Total (10 V)
14
nC
Qgd
Gate Charge Gate-to-Drain
RDS(on)
Drain-to-Source On Resistance
VGS(th)
Threshold Voltage
2.3
nC
VGS = 6 V
VGS = 10 V
13
mΩ
10
mΩ
3
V
Ordering Information(1)
2 Applications
•
•
UNIT
VDS
High-Side Synchronous Buck Converter
Motor Control
Device
Qty
Media
Package
Ship
CSD18537NQ5A
2500
13-Inch Reel
CSD18537NQ5AT
250
7-Inch Reel
SON 5 x 6 mm
Plastic Package
Tape and
Reel
3 Description
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
This 10 mΩ, 60 V, SON 5 mm x 6 mm NexFET™
power MOSFET is designed to minimize losses in
power conversion applications.
TA = 25°C
Top View
S
8
1
Absolute Maximum Ratings
VALUE
UNIT
VDS
Drain-to-Source Voltage
60
V
VGS
Gate-to-Source Voltage
±20
V
Continuous Drain Current (Package limited)
50
Continuous Drain Current (Silicon limited),
TC = 25°C
54
D
ID
S
7
2
D
IDM
S
3
G
4
Continuous Drain Current(1)
11
Pulsed Drain Current(2)
151
Power Dissipation(1)
3.2
Power Dissipation, TC = 25°C
75
–55 to 150
°C
55
mJ
6
D
PD
5
D
TJ,
Tstg
Operating Junction and
Storage Temperature Range
EAS
Avalanche Energy, single pulse
ID = 33 A, L = 0.1 mH, RG = 25 Ω
D
P0093-01
A
A
W
(1) Typical RθJA = 40°C/W on a 1-inch2, 2-oz. Cu pad on a
0.06-inch thick FR4 PCB.
(2) Max RθJC = 2.1°C/W, pulse duration ≤100 µs, duty cycle
≤1%
RDS(on) vs VGS
Gate Charge
10
TC = 25°C Id = 12A
TC = 125ºC Id = 12A
32
VGS - Gate-to-Source Voltage (V)
RDS(on) - On-State Resistance (mΩ)
36
28
24
20
16
12
8
4
0
0
2
4
6
8
10
12
14
16
VGS - Gate-to- Source Voltage (V)
18
20
G001
ID = 12A
VDS = 30V
9
8
7
6
5
4
3
2
1
0
0
3
6
9
Qg - Gate Charge (nC)
12
15
G001
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
CSD18537NQ5A
SLPS391B – JUNE 2013 – REVISED JULY 2014
www.ti.com
Table of Contents
1
2
3
4
5
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Specifications.........................................................
1
1
1
2
3
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics.............................. 4
6
Device and Documentation Support.................... 7
6.1 Trademarks ............................................................... 7
6.2 Electrostatic Discharge Caution ................................ 7
6.3 Glossary .................................................................... 7
7
Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1
7.2
7.3
7.4
Q5A Package Dimensions ........................................ 9
Recommended PCB Pattern................................... 10
Recommended Stencil Opening ............................. 11
Q5A Tape and Reel Information ............................. 11
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision A (February 2014) to Revision B
Page
•
Reduced silicon current limit to 54 A due to increase in RθJC ............................................................................................... 1
•
Increased pulsed current limit to 151 .................................................................................................................................... 1
•
Added line for maximum power dissipation with case temperature held to 25ºC ................................................................. 1
•
Updated the pulsed current conditions .................................................................................................................................. 1
•
Increased the maximum RθJC to 2.1 ºC/W ............................................................................................................................. 3
•
Updated Figure 1 from a normalized RθJA curve to an RθJC curve ......................................................................................... 4
•
Updated Figure 10 to show an improved SOA....................................................................................................................... 5
•
Updated Figure 12 to show a 50-A package current limit ..................................................................................................... 5
Changes from Original (June 2013) to Revision A
Page
•
Added part number to title ...................................................................................................................................................... 1
•
Added more information to description................................................................................................................................... 1
•
Updated ordering information to include small reel information ............................................................................................. 1
•
Removed TC = 25°C condition from package limited continuous drain current ..................................................................... 1
2
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SLPS391B – JUNE 2013 – REVISED JULY 2014
5 Specifications
5.1 Electrical Characteristics
(TA = 25°C unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
STATIC CHARACTERISTICS
BVDSS
Drain-to-Source Voltage
VGS = 0 V, ID = 250 μA
IDSS
Drain-to-Source Leakage Current
VGS = 0 V, VDS = 48 V
1
μA
IGSS
Gate-to-Source Leakage Current
VDS = 0 V, VGS = 20 V
100
nA
VGS(th)
Gate-to-Source Threshold Voltage
VDS = VGS, ID = 250 μA
RDS(on)
Drain-to-Source On Resistance
gƒs
Transconductance
60
2.6
V
3
3.5
V
VGS = 6 V, ID = 12 A
13
17
mΩ
VGS = 10 V, ID = 12 A
10
13
mΩ
VDS = 30 V, ID = 12 A
62
S
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Series Gate Resistance
Qg
Gate Charge Total (10 V)
14
Qgd
Gate Charge Gate-to-Drain
Qgs
Gate Charge Gate-to-Source
Qg(th)
Gate Charge at Vth
Qoss
Output Charge
td(on)
Turn On Delay Time
tr
Rise Time
td(off)
Turn Off Delay Time
tƒ
Fall Time
VGS = 0 V, VDS = 30 V, ƒ = 1 MHz
VDS = 30 V, ID = 12 A
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 10 V, IDS = 12 A, RG = 0 Ω
1140
1480
pF
136
177
pF
4
5.2
pF
5.5
11
Ω
18
nC
2.3
nC
4.7
nC
3.3
nC
25
nC
5.8
ns
4
ns
14.4
ns
3.2
ns
DIODE CHARACTERISTICS
VSD
Diode Forward Voltage
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
ISD = 12 A, VGS = 0 V
0.8
VDS= 30 V, IF = 12 A, di/dt = 300 A/μs
1
V
54
nC
40
ns
5.2 Thermal Information
(TA = 25°C unless otherwise stated)
THERMAL METRIC
(1)
RθJC
Junction-to-Case Thermal Resistance
RθJA
Junction-to-Ambient Thermal Resistance
(1)
(2)
MIN
TYP
MAX
2.1
(1) (2)
50
UNIT
°C/W
RθJC is determined with the device mounted on a 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inches × 1.5-inches
(3.81-cm × 3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board
design.
Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.
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3
CSD18537NQ5A
SLPS391B – JUNE 2013 – REVISED JULY 2014
GATE
www.ti.com
GATE
Source
N-Chan 5x6 QFN TTA MIN Rev3
N-Chan 5x6 QFN TTA MAX Rev3
Max RθJA = 50°C/W
when mounted on
1 inch2 (6.45 cm2) of
2-oz. (0.071-mm thick)
Cu.
Source
Max RθJA = 125°C/W
when mounted on a
minimum pad area of
2-oz. (0.071-mm thick)
Cu.
DRAIN
DRAIN
M0137-02
M0137-01
5.3 Typical MOSFET Characteristics
(TA = 25°C unless otherwise stated)
Figure 1. Transient Thermal Impedance
4
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SLPS391B – JUNE 2013 – REVISED JULY 2014
Typical MOSFET Characteristics (continued)
(TA = 25°C unless otherwise stated)
50
45
IDS - Drain-to-Source Current (A)
IDS - Drain-to-Source Current (A)
50
40
35
30
25
20
15
VGS =10V
VGS =8V
VGS =6V
10
5
0
0
0.1
0.2
0.3
0.4
0.5
0.6
VDS - Drain-to-Source Voltage (V)
0.7
VDS = 5V
40
30
20
0
0.8
TC = 125°C
TC = 25°C
TC = −55°C
10
0
1
Figure 2. Saturation Characteristics
C − Capacitance (pF)
VGS - Gate-to-Source Voltage (V)
ID = 12A
VDS = 30V
8
7
6
5
4
3
8
G001
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
1000
100
10
2
1
0
0
3
6
9
Qg - Gate Charge (nC)
12
1
15
0
10
20
30
40
50
VDS - Drain-to-Source Voltage (V)
G001
Figure 4. Gate Charge
60
G001
Figure 5. Capacitance
3.6
36
RDS(on) - On-State Resistance (mΩ)
ID = 250uA
VGS(th) - Threshold Voltage (V)
7
Figure 3. Transfer Characteristics
20000
10000
10
9
2
3
4
5
6
VGS - Gate-to-Source Voltage (V)
G001
3.4
3.2
3
2.8
2.6
2.4
2.2
2
−75
−25
25
75
125
TC - Case Temperature (ºC)
Figure 6. Threshold Voltage vs Temperature
175
TC = 25°C Id = 12A
TC = 125ºC Id = 12A
32
28
24
20
16
12
8
4
0
0
2
G001
4
6
8
10
12
14
16
VGS - Gate-to- Source Voltage (V)
18
20
G001
Figure 7. On-State Resistance vs Gate-to-Source Voltage
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CSD18537NQ5A
SLPS391B – JUNE 2013 – REVISED JULY 2014
www.ti.com
Typical MOSFET Characteristics (continued)
(TA = 25°C unless otherwise stated)
2
100
VGS = 6V
VGS = 10V
ISD − Source-to-Drain Current (A)
Normalized On-State Resistance
2.2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
−75
TC = 25°C
TC = 125°C
10
1
0.1
0.01
0.001
ID =12A
−25
25
75
125
TC - Case Temperature (ºC)
175
0.0001
0
Figure 8. Normalized On-State Resistance vs Temperature
G001
Figure 9. Typical Diode Forward Voltage
10us
100us
1ms
10ms
DC
TC = 25ºC
TC = 125ºC
IAV - Peak Avalanche Current (A)
IDS - Drain-to-Source Current (A)
1
100
1000
100
10
1
Single Pulse
Max RthetaJC = 2.1ºC/W
0.1
0.1
0.2
0.4
0.6
0.8
VSD − Source-to-Drain Voltage (V)
G001
1
10
VDS - Drain-to-Source Voltage (V)
100
10
0.01
0.1
TAV - Time in Avalanche (mS)
G001
Figure 10. Maximum Safe Operating Area
1
G001
Figure 11. Single Pulse Unclamped Inductive Switching
IDS - Drain- to- Source Current (A)
60
50
40
30
20
10
0
−50
−25
0
25
50
75
100 125
TC - Case Temperature (ºC)
150
175
G001
Figure 12. Maximum Drain Current vs Temperature
6
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SLPS391B – JUNE 2013 – REVISED JULY 2014
6 Device and Documentation Support
6.1 Trademarks
NexFET is a trademark of Texas Instruments.
6.2 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
6.3 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
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CSD18537NQ5A
SLPS391B – JUNE 2013 – REVISED JULY 2014
www.ti.com
7 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
8
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SLPS391B – JUNE 2013 – REVISED JULY 2014
2
3
4
5
4
5
6
3
6
7
2
7
1
8
1
8
7.1 Q5A Package Dimensions
DIM
MILLIMETERS
MIN
NOM
MAX
A
0.90
1.00
1.10
b
0.33
0.41
0.51
c
0.20
0.25
0.34
D1
4.80
4.90
5.00
D2
3.61
3.81
4.02
E
5.90
6.00
6.10
E1
5.70
5.75
5.80
E2
3.38
3.58
3.78
E3
3.03
3.13
3.23
e
1.17
1.27
1.37
e1
0.27
0.37
0.47
e2
0.15
0.25
0.35
H
0.41
0.56
0.71
K
1.10
—
—
L
0.51
0.61
0.71
L1
0.06
0.13
0.20
θ
0°
—
12°
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CSD18537NQ5A
SLPS391B – JUNE 2013 – REVISED JULY 2014
www.ti.com
7.2 Recommended PCB Pattern
F1
F7
F3
8
1
F2
F11
F5
F9
5
4
F6
F8
F4
F10
M0139-01
DIM
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
F1
6.205
6.305
0.244
0.248
F2
4.46
4.56
0.176
0.18
F3
4.46
4.56
0.176
0.18
F4
0.65
0.7
0.026
0.028
F5
0.62
0.67
0.024
0.026
F6
0.63
0.68
0.025
0.027
F7
0.7
0.8
0.028
0.031
F8
0.65
0.7
0.026
0.028
F9
0.62
0.67
0.024
0.026
F10
4.9
5
0.193
0.197
F11
4.46
4.56
0.176
0.18
For recommended circuit layout for PCB designs, see application note SLPA005 – Reducing Ringing Through
PCB Layout Techniques.
10
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SLPS391B – JUNE 2013 – REVISED JULY 2014
7.3 Recommended Stencil Opening
(0.020) 8x
0.500
(0.020)
0.500
5
4
0.500
(0.020) 8x
1.585
(0.062)
1.235
(0.049)
(0.024)
0.620
(0.170) 4.310
0.385
(0.015)
1.270 (0.050)
1
8
1.570 (0.062)
4x
0.615
(0.024)
1.105
(0.044)
3.020
(0.119)
K0
4.00 ±0.10 (See Note 1)
0.30 ±0.05
2.00 ±0.05
+0.10
–0.00
12.00 ±0.30
Ø 1.50
1.75 ±0.10
7.4 Q5A Tape and Reel Information
5.50 ±0.05
B0
R 0.30 MAX
A0
8.00 ±0.10
Ø 1.50 MIN
A0 = 6.50 ±0.10
B0 = 5.30 ±0.10
K0 = 1.40 ±0.10
R 0.30 TYP
M0138-01
Notes:
1. 10-sprocket hole-pitch cumulative tolerance ±0.2
2. Camber not to exceed 1 mm in 100 mm, noncumulative over 250 mm
3. Material: black static-dissipative polystyrene
4. All dimensions are in mm (unless otherwise specified).
5. A0 and B0 measured on a plane 0.3 mm above the bottom of the pocket.
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11
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
CSD18537NQ5A
ACTIVE
VSONP
DQJ
8
2500
RoHS-Exempt
& Green
SN
Level-1-260C-UNLIM
-55 to 150
18537N
CSD18537NQ5AT
ACTIVE
VSONP
DQJ
8
250
RoHS-Exempt
& Green
SN
Level-1-260C-UNLIM
-55 to 150
18537N
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of