CSD19531KCS

Product Folder Order Now Support & Community Tools & Software Technical Documents CSD19531KCS ZHCSBK8C – SEPTEMBER 2013 – REVISED MARCH 2017 CSD19531KCS 100V N 通道 NexFET™功 功率金属氧化物半导体场效应晶体 管 (MOSFET) 1 特性 • • • • • • • 1 产品概要 超低 Qg 和 Qgd 低热阻 雪崩额定值 无铅引脚镀层 符合 RoHS 环保标准 无卤素 晶体管 (TO)-220 塑料封装 典型值 TA=25°C 漏源电压 100 V Qg 栅极电荷总量 (10V) 37 nC Qgd 栅极电荷（栅极到漏极） RDS(on) 漏源导通电阻 VGS(th) 阈值电压 7.5 nC VGS = 6V 7.3 VGS = 10V 6.4 2.7 mΩ V 器件信息(1) 2 应用范围 • • • 单位 VDS 次级侧同步整流器 热插拔电信应用 电机控制 器件 封装 包装介 质 数量 运输 CSD19531KCS TO-220 塑料封装 管 50 管 (1) 要了解所有可用封装，请见数据表末尾的可订购产品附录。 绝对最大额定值 3 说明 此 100V、6.4mΩ、TO-220 NexFET™功率 MOSFET 被设计成在功率转换应用中大大降低 损耗。 值 单位 VDS 漏源电压 100 V VGS 栅源电压 ±20 V 持续漏极电流（受封装限制） 100 持续漏极电流（受芯片限制），TC = 25°C 时 测得 110 持续漏极电流（受芯片限制），TC = 100°C 时测得 78 TA=25°C . Drain (Pin 2) ID Gate (Pin 1) (1) A IDM 脉冲漏极电流 285 A PD 功率耗散 214 W TJ， Tstg 工作结温， 储存温度 -55 至 175 °C EAS 雪崩能量，单一脉冲 ID = 60A，L = 0.1mH，RG = 25Ω 180 mJ Source (Pin 3) (1) 最大 RθJC = 0.7ºC/W，脉冲持续时间 ≤ 100μs，占空比 ≤ 1%。 RDS(on) 与 VGS 间的关系 栅极电荷 10 TC = 25°C, I D = 60A TC = 125°C, I D = 60A 18 VGS - Gate-to-Source Voltage (V) RDS(on) - On-State Resistance (mΩ) 20 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 VGS - Gate-to- Source Voltage (V) 18 20 G001 ID = 60A VDS = 50V 9 8 7 6 5 4 3 2 1 0 0 4 8 12 16 20 24 28 Qg - Gate Charge (nC) 32 36 40 G001 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. English Data Sheet: SLPS407 CSD19531KCS ZHCSBK8C – SEPTEMBER 2013 – REVISED MARCH 2017 www.ti.com.cn 目录 1 2 3 4 5 特性 .......................................................................... 应用范围................................................................... 说明 .......................................................................... 修订历史记录 ........................................................... Specifications......................................................... 1 1 1 2 3 5.1 Electrical Characteristics........................................... 3 5.2 Thermal Information .................................................. 3 5.3 Typical MOSFET Characteristics.............................. 4 6 器件和文档支持 ........................................................ 7 6.1 6.2 6.3 6.4 6.5 7 接收文档更新通知 ..................................................... 社区资源.................................................................... 商标 ........................................................................... 静电放电警告............................................................. Glossary .................................................................... 7 7 7 7 7 机械、封装和可订购信息 ......................................... 8 7.1 KCS 封装尺寸 ........................................................... 8 4 修订历史记录 Changes from Revision B (June 2014) to Revision C Page • 已添加 接收文档更新通知部分和社区资源部分至器件和文档支持部分................................................................................... 7 • 已更改 KCS 封装尺寸部分中的封装图 .................................................................................................................................... 8 Changes from Revision A (May 2014) to Revision B • Page Added value for max Qg ......................................................................................................................................................... 3 Changes from Original (September 2013) to Revision A Page • 已将芯片限制电流更新为反映器件运行温度范围内的增加量 .................................................................................................. 1 • 已增加脉冲电流来反映全新条件 ............................................................................................................................................. 1 • 已增加最大功率耗散来反映全新条件 ...................................................................................................................................... 1 • 已将运行温度范围和结温范围增加至 175ºC .......................................................................................................................... 1 • 更新了脉冲漏极电流条件 ........................................................................................................................................................ 1 • Changed Figure 1 from a normalized RθJA curve to a normalized RθJC curve ....................................................................... 4 • Updated Figure 6 to reflect increase in device operating temperature range ....................................................................... 5 • Updated Figure 8 to reflect increase in device operating temperature range ....................................................................... 5 • Updated Figure 10 to reflect measured SOA data ................................................................................................................ 6 • Updated Figure 12 to reflect increase in device operating temperature range ..................................................................... 6 2 版权 © 2013–2017, Texas Instruments Incorporated CSD19531KCS www.ti.com.cn ZHCSBK8C – SEPTEMBER 2013 – REVISED MARCH 2017 5 Specifications 5.1 Electrical Characteristics TA = 25°C (unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA IDSS Drain-to-source leakage current VGS = 0 V, VDS = 80 V 1 μA IGSS Gate-to-source leakage current VDS = 0 V, VGS = 20 V 100 nA VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 μA V RDS(on) Drain-to-source on resistance gfs Transconductance 100 2.2 V 2.7 3.3 VGS = 6 V, ID = 60 A 7.3 8.8 VGS = 10 V, ID = 60 A 6.4 7.7 VDS = 10 V, ID = 60 A 137 mΩ S DYNAMIC CHARACTERISTICS Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance RG Series gate resistance Qg Gate charge total (10 V) 38 Qgd Gate charge gate-to-drain Qgs Gate charge gate-to-source Qg(th) Gate charge at Vth Qoss Output charge td(on) Turnon delay time tr Rise Time 7.2 ns td(off) Turnoff delay time 16 ns tf Fall time 4.1 ns VGS = 0 V, VDS = 50 V, ƒ = 1 MHz VDS = 50 V, ID = 60 A VDS = 50 V, VGS = 0 V VDS = 50 V, VGS = 10 V, IDS = 60 A, RG = 0 Ω 2980 3870 pF 560 728 pF 13 17 pF 1.3 2.6 Ω 49 nC 7.5 nC 11.9 nC 7.3 nC 98 nC 8.4 ns DIODE CHARACTERISTICS VSD Diode forward voltage ISD = 60 A, VGS = 0 V 0.9 1 V Qrr Reverse recovery charge nC Reverse recovery time VDS= 50 V, IF = 60 A, di/dt = 300 A/μs 270 trr 83 ns 5.2 Thermal Information TA = 25°C (unless otherwise stated) MAX UNIT RθJC Junction-to-case thermal resistance THERMAL METRIC 0.7 °C/W RθJA Junction-to-ambient thermal resistance 62 °C/W Copyright © 2013–2017, Texas Instruments Incorporated MIN TYP 3 CSD19531KCS ZHCSBK8C – SEPTEMBER 2013 – REVISED MARCH 2017 www.ti.com.cn 5.3 Typical MOSFET Characteristics TA = 25°C (unless otherwise stated) 200 200 180 180 160 140 120 100 80 60 VGS =10V VGS =8V VGS =6V 40 20 0 0 0.4 0.8 1.2 1.6 VDS - Drain-to-Source Voltage (V) Figure 2. Saturation Characteristics 4 IDS - Drain-to-Source Current (A) IDS - Drain-to-Source Current (A) Figure 1. Transient Thermal Impedance 2 G001 VDS = 5V 160 140 120 100 80 60 TC = 125°C TC = 25°C TC = −55°C 40 20 0 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) 7 8 G001 Figure 3. Transfer Characteristics Copyright © 2013–2017, Texas Instruments Incorporated CSD19531KCS www.ti.com.cn ZHCSBK8C – SEPTEMBER 2013 – REVISED MARCH 2017 Typical MOSFET Characteristics (continued) TA = 25°C (unless otherwise stated) 100000 Ciss = Cgd + Cgs Coss = Cds + Cgd Crss = Cgd ID = 60A VDS = 50V 9 8 10000 C − Capacitance (pF) VGS - Gate-to-Source Voltage (V) 10 7 6 5 4 3 1000 100 10 2 1 0 0 4 8 12 16 20 24 28 Qg - Gate Charge (nC) 32 36 1 40 0 10 20 G001 Figure 4. Gate Charge ID = 250uA 3.1 2.9 2.7 2.5 2.3 2.1 1.9 1.7 1.3 −75 −50 −25 RDS(on) - On-State Resistance (mΩ) VGS(th) - Threshold Voltage (V) 100 G001 20 1.5 Figure 6. Threshold Voltage vs Temperature TC = 25°C, I D = 60A TC = 125°C, I D = 60A 18 16 14 12 10 8 6 4 2 0 0 25 50 75 100 125 150 175 200 TC - Case Temperature (ºC) G001 0 2 4 6 8 10 12 14 16 VGS - Gate-to- Source Voltage (V) 18 20 G001 Figure 7. On-State Resistance vs Gate-to-Source Voltage 100 2.4 VGS = 6V VGS = 10V ISD − Source-to-Drain Current (A) Normalized On-State Resistance 90 Figure 5. Capacitance 3.3 2.2 30 40 50 60 70 80 VDS - Drain-to-Source Voltage (V) 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 −75 −50 −25 TC = 25°C TC = 125°C 10 1 0.1 0.01 0.001 ID = 60A 0 25 50 75 100 125 150 175 200 TC - Case Temperature (ºC) G001 Figure 8. Normalized On-State Resistance vs Temperature Copyright © 2013–2017, Texas Instruments Incorporated 0.0001 0 0.2 0.4 0.6 0.8 VSD − Source-to-Drain Voltage (V) 1 G001 Figure 9. Typical Diode Forward Voltage 5 CSD19531KCS ZHCSBK8C – SEPTEMBER 2013 – REVISED MARCH 2017 www.ti.com.cn Typical MOSFET Characteristics (continued) TA = 25°C (unless otherwise stated) 1000 100 10us 100us 1ms 10ms DC 100 10 1 Single Pulse Max RthetaJC = 0.7ºC/W 0.1 0.1 TC = 25ºC TC = 125ºC IAV - Peak Avalanche Current (A) IDS - Drain-to-Source Current (A) 5000 1 10 100 VDS - Drain-to-Source Voltage (V) 1000 G001 Figure 10. Maximum Safe Operating Area 10 0.01 0.1 TAV - Time in Avalanche (mS) 1 G001 Figure 11. Single Pulse Unclamped Inductive Switching IDS - Drain- to- Source Current (A) 125 100 75 50 25 0 −50 −25 0 25 50 75 100 125 150 175 200 TC - Case Temperature (ºC) G001 Figure 12. Maximum Drain Current vs Temperature 6 版权 © 2013–2017, Texas Instruments Incorporated CSD19531KCS www.ti.com.cn ZHCSBK8C – SEPTEMBER 2013 – REVISED MARCH 2017 6 器件和文档支持 6.1 接收文档更新通知 如需接收文档更新通知，请访问 www.ti.com.cn 网站上的器件产品文件夹。点击右上角的提醒我 (Alert me) 注册 后，即可每周定期收到已更改的产品信息。有关更改的详细信息，请查阅已修订文档中包含的修订历史记录。 6.2 社区资源 The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 6.3 商标 NexFET, E2E are trademarks of Texas Instruments. All other trademarks are the property of their respective owners. 6.4 静电放电警告 这些装置包含有限的内置 ESD 保护。 存储或装卸时，应将导线一起截短或将装置放置于导电泡棉中，以防止 MOS 门极遭受静电损 伤。 6.5 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 版权 © 2013–2017, Texas Instruments Incorporated 7 CSD19531KCS ZHCSBK8C – SEPTEMBER 2013 – REVISED MARCH 2017 www.ti.com.cn 7 机械、封装和可订购信息 以下页中包括机械、封装和可订购信息。这些信息是针对指定器件可提供的最新数据。这些数据会在无通知且不对 本文档进行修订的情况下发生改变。要获得这份数据表的浏览器版本，请查阅左侧的导航栏。 7.1 KCS 封装尺寸 4.7 4.4 10.36 9.96 1.32 1.22 2.9 2.6 6.5 6.1 8.55 8.15 (6.3) ( 3.84) 12.5 12.1 19.65 MAX 9.25 9.05 3X 3.9 MAX 13.12 12.70 3 1 3X 0.47 0.34 0.90 0.77 2.79 2.59 2X 2.54 3X 1.36 1.23 5.08 4222214/A 10/2015 注释： 1. 所有控制线性尺寸的单位均为英寸。括号中的尺寸单位均为毫米。括号或括弧中的尺寸均仅供参考。尺寸和容 限值遵循 ASME Y14.5M。 2. 本图纸如有变更，恕不通知。 3. 参考 JEDEC 注册 TO-220。 表 1. 引脚配置 8 位置 名称 引脚 1 栅极 引脚 2 / 标签 漏极 引脚 3 源极 版权 © 2013–2017, Texas Instruments Incorporated PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) (3) Device Marking (4/5) (6) CSD19531KCS ACTIVE TO-220 KCS 3 50 RoHS-Exempt & Green SN N / A for Pkg Type -55 to 175 CSD19531KCS (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of