CSD25202W15

Sample & Buy Product Folder Support & Community Tools & Software Technical Documents CSD25202W15 SLPS508A – JUNE 2014 – REVISED JULY 2014 CSD25202W15 20-V P-Channel NexFET™ Power MOSFET 1 Features • • • • • • • 1 Product Summary Low-Resistance Small Footprint 1.5 mm × 1.5 mm Gate ESD Protection –3 kV Pb Free RoHS Compliant Halogen Free Gate-Source Voltage Clamp TA = 25°C TYPICAL VALUE Drain-to-Source Voltage –20 V Qg Gate Charge Total (–4.5 V) 5.8 nC Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) 3 Description This 21 mΩ, 20 V device is designed to deliver the lowest on resistance and gate charge in a small 1.5 mm × 1.5 mm chip scale package with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications. Top View S S Gate Drain Media Package Ship CSD25202W15T 250 7-Inch Reel 1.5-mm × 1.5-mm Wafer Level Package Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet. Text Added For Spacing Absolute Maximum Ratings TA = 25°C VALUE UNIT VDS Drain-to-Source Voltage –20 V VGS Gate-to-Source Voltage –6 V Continuous Drain Current(1) –4 A Pulsed Drain Current(2) –38 A Continuous Gate Current(1) –0.5 A Pulsed Gate Current(2) –7 A PD Power Dissipation 0.5 W TJ, Tstg Operating Junction and Storage Temperature Range –55 to 150 °C RDS(on) vs VGS Gate Charge 50 4.5 TC = 25°C, I D = −2A TC = 125°C, I D = −2A 46 − VGS - Gate-to-Source Voltage (V) RDS(on) - On-State Resistance (mΩ) V (1) Ball limited (2) Typical RθJA = 220ºC/W, pulse duration ≤100 µs, duty cycle ≤ 1% P0117-01 42 38 34 30 26 22 18 14 10 mΩ –0.75 7-Inch Reel IG D mΩ 21 Qty S S 26 VGS = –4.5 V 3000 ID D VGS = –2.5 V Device Source D mΩ CSD25202W15 Symbol Pin A1 Indicator D nC 40 Ordering Information(1) Battery Management Battery Protection G 0.8 VGS = –1.8 V Threshold Voltage 2 Applications • • UNIT VDS 0 1 2 3 4 5 − VGS - Gate-to- Source Voltage (V) 6 G001 ID = −2A VDS = −10V 4 3.5 3 2.5 2 1.5 1 0.5 0 0 1 2 3 4 Qg - Gate Charge (nC) 5 6 G001 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CSD25202W15 SLPS508A – JUNE 2014 – REVISED JULY 2014 www.ti.com Table of Contents 1 2 3 4 5 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Specifications......................................................... 1 1 1 2 3 5.1 Electrical Characteristics........................................... 3 5.2 Thermal Information .................................................. 3 5.3 Typical MOSFET Characteristics.............................. 4 6 Device and Documentation Support.................... 7 6.1 Trademarks ............................................................... 7 6.2 Electrostatic Discharge Caution ................................ 7 6.3 Glossary .................................................................... 7 7 Mechanical, Packaging, and Orderable Information ............................................................. 8 7.1 CSD25202W15 Package Dimensions ...................... 8 7.2 Recommended Land Pattern .................................... 9 7.3 Tape and Reel Information ....................................... 9 4 Revision History Changes from Original (June 2014) to Revision A • 2 Page Corrected "Drain-to-Drain Voltage" to state "Drain-to-Source Voltage" ................................................................................. 1 Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: CSD25202W15 CSD25202W15 www.ti.com SLPS508A – JUNE 2014 – REVISED JULY 2014 5 Specifications 5.1 Electrical Characteristics (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-Source Voltage VGS = 0 V, IDS = –250 μA –20 BVGSS Gate-to-Source Voltage VDS = 0 V, IG = –250 μA –6 IDDS Drain-to-Source Leakage Current VGS = 0 V, VDS = –16 V IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = –6 V VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, IDS = –250 μA RDS(on) gƒs Drain-to-Source On Resistance Transconductance –0.45 V –7.2 V –1 μA –100 nA –0.75 –1.05 VGS = –1.8 V, IDS = –2 A 40 52 mΩ V VGS = –2.5 V, IDS = –2 A 26 32 mΩ VGS = –4.5 V, IDS = –2 A 21 26 mΩ VDS = –2 V, IDS = –2 A 16 S DYNAMIC CHARACTERISTICS CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance VGS = 0 V, VDS = –10 V, ƒ = 1 MHz (1) RG Series Gate Resistance Qg Gate Charge Total (–4.5 V) Qgd Gate Charge - Gate-to-Drain Qgs Gate Charge - Gate-to-Source Qg(th) Gate Charge at Vth QOSS Output Charge td(on) Turn On Delay Time (2) Rise Time td(off) Turn Off Delay Time (2) tf Fall Time (2) 1010 pF 400 520 pF 21 27 pF 7.5 nC Ω 31 5.8 VDS = –10 V, ID = –2 A VDS = –9.5 V, VGS = 0 V (2) tr 778 VDS = –10 V, VGS = –4.5 V, IDS = –2 A, RG = 2 Ω 0.8 nC 1.1 nC 0.6 nC 8.7 nC 15 ns 12 ns 64 ns 28 ns DIODE CHARACTERISTICS VSD Diode Forward Voltage Qrr Reverse Recovery Charge trr Reverse Recovery Time (1) (2) IDS = –2 A, VGS = 0 V –0.75 VSD = –10 V, IF = –2 A, di/dt = 200 A/μs –1 V 19 nC 26 ns Includes gate clamp resistor External RG is in addition to the internal gate clamp resistor 5.2 Thermal Information (TA = 25°C unless otherwise stated) THERMAL METRIC RθJA (1) (2) MIN TYP Junction-to-Ambient Thermal Resistance (1) 220 Junction-to-Ambient Thermal Resistance (2) 140 MAX UNIT °C/W Device mounted on FR4 material with minimum Cu mounting area. Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu. Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: CSD25202W15 3 CSD25202W15 SLPS508A – JUNE 2014 – REVISED JULY 2014 www.ti.com Typ RθJA = 140°C/W when mounted on 1 inch2 (6.45 cm2) of 2-oz. (0.071-mm thick) Cu. M0149-01 Typ RθJA = 220°C/W when mounted on a minimum pad area of 2-oz. (0.071-mm thick) Cu. M0150-01 5.3 Typical MOSFET Characteristics (TA = 25°C unless otherwise stated) Figure 1. Transient Thermal Impedance 4 Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: CSD25202W15 CSD25202W15 www.ti.com SLPS508A – JUNE 2014 – REVISED JULY 2014 Typical MOSFET Characteristics (continued) (TA = 25°C unless otherwise stated) 25 − IDS - Drain-to-Source Current (A) − IDS - Drain-to-Source Current (A) 20 18 16 14 12 10 8 6 VGS = −4.5V VGS = −2.5 V VGS = −1.8V 4 2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 − VDS - Drain-to-Source Voltage (V) 0.9 20 15 10 0 1 TC = 125°C TC = 25°C TC = −55°C 5 0 0.2 G001 0.4 0.6 0.8 1 1.2 1.4 1.6 − VGS - Gate-to-Source Voltage (V) 1.8 2 G001 VDS = –5 V Figure 3. Transfer Characteristics 1000 4 900 3.5 800 C − Capacitance (pF) − VGS - Gate-to-Source Voltage (V) Figure 2. Saturation Characteristics 4.5 3 2.5 2 1.5 1 700 500 400 300 200 0.5 0 Ciss = Cgd + Cgs Coss = Cds + Cgd Crss = Cgd 600 100 0 1 2 3 4 Qg - Gate Charge (nC) ID = –2 A 5 0 6 0 2 4 6 8 10 12 14 16 − VDS - Drain-to-Source Voltage (V) G001 20 G001 VDS = –10 V Figure 4. Gate Charge Figure 5. Capacitance 1.05 50 RDS(on) - On-State Resistance (mΩ) − VGS(th) - Threshold Voltage (V) 18 0.95 0.85 0.75 0.65 0.55 0.45 0.35 0.25 −75 −50 −25 0 25 50 75 100 125 150 175 TC - Case Temperature (ºC) G001 TC = 25°C, I D = −2A TC = 125°C, I D = −2A 46 42 38 34 30 26 22 18 14 10 0 1 2 3 4 5 − VGS - Gate-to- Source Voltage (V) 6 G001 ID = –250 µA Figure 6. Threshold Voltage vs Temperature Figure 7. On-State Resistance vs Gate-to-Source Voltage Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: CSD25202W15 5 CSD25202W15 SLPS508A – JUNE 2014 – REVISED JULY 2014 www.ti.com Typical MOSFET Characteristics (continued) (TA = 25°C unless otherwise stated) 1.3 10 VGS = −2.5V VGS = −4.5V − ISD − Source-to-Drain Current (A) Normalized On-State Resistance 1.4 1.2 1.1 1 0.9 0.8 0.7 −75 −50 −25 0 25 50 75 100 125 150 175 TC - Case Temperature (ºC) G001 TC = 25°C TC = 125°C 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 − VSD − Source-to-Drain Voltage (V) 1 G001 ID = –2 A Figure 8. Normalized On-State Resistance vs Temperature Figure 9. Typical Diode Forward Voltage 5 IDS - Drain- to- Source Current (A) IDS - Drain-to-Source Current (A) 100 10 1 10us 100us 1ms 0.1 0.1 10ms 100ms 1 10 VDS - Drain-to-Source Voltage (V) 100 4 3 2 1 0 −50 −25 G001 0 25 50 75 100 125 150 175 200 TC - Case Temperature (ºC) G001 Single Pulse, Max RθJA = 220°C/W Figure 10. Maximum Safe Operating Area 6 Figure 11. Maximum Drain Current vs Temperature Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: CSD25202W15 CSD25202W15 www.ti.com SLPS508A – JUNE 2014 – REVISED JULY 2014 6 Device and Documentation Support 6.1 Trademarks NexFET is a trademark of Texas Instruments. All other trademarks are the property of their respective owners. 6.2 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 6.3 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: CSD25202W15 7 CSD25202W15 SLPS508A – JUNE 2014 – REVISED JULY 2014 www.ti.com 7 Mechanical, Packaging, and Orderable Information The following pages include mechanical packaging and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 7.1 CSD25202W15 Package Dimensions Solder Ball Ø 0.31 ±0.075 Pin 1 Mark 1 2 3 2 3 1 A B 1.50 B 1.00 +0.00 –0.08 0.50 A C C 1.50 +0.00 –0.08 0.62 Max Top View 0.50 Bottom View 0.04 0.62 Max 0.35 ±0.10 Side View Seating Plate Front View M0171-01 NOTE: All dimensions are in mm (unless otherwise specified) Pinout 8 POSITION DESIGNATION A1 Gate A2, B1, B2, C1 Drain A3, B3, C2, C3 Source Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: CSD25202W15 CSD25202W15 www.ti.com SLPS508A – JUNE 2014 – REVISED JULY 2014 7.2 Recommended Land Pattern Ø 0.25 1 2 3 1.00 0.50 A B C 0.50 M0172-01 NOTE: All dimensions are in mm (unless otherwise specified) 7.3 Tape and Reel Information 4.00 ±0.10 2.00 ±0.05 4.00 ±0.10 Ø 0.50 ±0.05 0.86 ±0.05 1.60 ±0.05 5° Max 3.50 ±0.05 8.00 +0.30 –0.10 1.75 ±0.10 Ø 1.50 ±0.10 0.254 ±0.02 1.60 ±0.05 5° Max M0173-01 NOTES: 1. 10-sprocket hole-pitch cumulative tolerance ±0.2 2. Camber not to exceed 1 mm in 100 mm, noncumulative over 250 mm 3. Material: black static-dissipative polystyrene 4. All dimensions are in mm (unless otherwise specified). 5. Thickness: 0.30 ±0.05 mm 6. MSL1 260°C (IR and convection) PbF-reflow compatible Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: CSD25202W15 9 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) CSD25202W15 ACTIVE DSBGA YZF 9 3000 RoHS & Green SNAGCU Level-1-260C-UNLIM CSD25202W15T ACTIVE DSBGA YZF 9 250 RoHS & Green SNAGCU Level-1-260C-UNLIM 25202 -55 to 150 25202 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of