CSD88537NDT

Sample & Buy Product Folder Support & Community Tools & Software Technical Documents CSD88537ND SLPS455A – JANUARY 2014 – REVISED AUGUST 2014 CSD88537ND Dual 60-V N-Channel NexFET™ Power MOSFET 1 Features • • • • • 1 Product Summary Ultra-Low Qg and Qgd Avalanche Rated Pb Free RoHS Compliant Halogen Free TA = 25°C 2 Applications • • TYPICAL VALUE Drain-to-Source Voltage 60 V Qg Gate Charge Total (10 V) 14 nC Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage Half Bridge for Motor Control Synchronous Buck Converter This dual SO-8, 60 V, 12.5 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in low current motor control applications. 2 G1 3 S2 4 G2 nC 15 mΩ VGS = 10 V 12.5 mΩ 3.0 V Device Media Qty Package Ship CSD88537ND 13-Inch Reel 2500 CSD88537NDT 7-Inch Reel 250 SO-8 Plastic Package Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet. Top View 1 2.3 VGS = 6 V . Ordering Information(1) 3 Description S1 UNIT VDS Absolute Maximum Ratings 8 7 6 5 TA = 25°C D1 VALUE UNIT VDS Drain-to-Source Voltage 60 V VGS Gate-to-Source Voltage ±20 V Continuous Drain Current (Package limited) 15 Continuous Drain Current (Silicon limited), TC = 25°C 16 D1 ID D2 Continuous Drain Current D2 (1) A 8.0 IDM Pulsed Drain Current, TA = 25°C(2) 108 A PD Power Dissipation(1) 2.1 W . TJ, Tstg Operating Junction and Storage Temperature Range –55 to 150 °C . EAS Avalanche Energy, single pulse ID = 32, L = 0.1 mH, RG = 25 Ω 51 mJ . (1) Typical RθJA = 60°C/W on a 1-inch2, 2-oz. Cu pad on a 0.06-inch thick FR4 PCB. (2) Max RθJL = 20°C/W, pulse duration ≤100 μs, duty cycle ≤1% . RDS(on) vs VGS Gate Charge 10 TC = 25°C, I D = 8A TC = 125°C, I D = 8A 27 VGS - Gate-to-Source Voltage (V) RDS(on) - On-State Resistance (mΩ) 30 24 21 18 15 12 9 6 3 0 0 2 4 6 8 10 12 14 16 VGS - Gate-to- Source Voltage (V) 18 20 G001 ID = 8A VDS = 30V 9 8 7 6 5 4 3 2 1 0 0 3 6 9 Qg - Gate Charge (nC) 12 15 G001 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CSD88537ND SLPS455A – JANUARY 2014 – REVISED AUGUST 2014 www.ti.com Table of Contents 1 2 3 4 5 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Specifications......................................................... 1 1 1 2 3 5.1 Electrical Characteristics........................................... 3 5.2 Thermal Information .................................................. 3 5.3 Typical MOSFET Characteristics.............................. 4 6 Device and Documentation Support.................... 7 6.1 Trademarks ............................................................... 7 6.2 Electrostatic Discharge Caution ................................ 7 6.3 Glossary .................................................................... 7 7 Mechanical, Packaging, and Orderable Information ............................................................. 8 7.1 SO-8 Package Dimensions....................................... 8 7.2 Recommended PCB Pattern and Stencil Opening ... 9 4 Revision History Changes from Original (January 2014) to Revision A Page • Pulsed drain current increased from 62 to 108 A .................................................................................................................. 1 • Updated pulsed drain current conditions ................................................................................................................................ 1 • Changed RθJC to RθJL in Thermal Information ....................................................................................................................... 3 • Updated the SOA in Figure 10 .............................................................................................................................................. 6 2 Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: CSD88537ND CSD88537ND www.ti.com SLPS455A – JANUARY 2014 – REVISED AUGUST 2014 5 Specifications 5.1 Electrical Characteristics (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 250 μA IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 48 V 1 μA IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = 20 V 100 nA VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = 250 μA RDS(on) Drain-to-Source On-Resistance gƒs Transconductance 60 2.6 V 3 3.6 V 15 19 mΩ VGS = 10 V, ID = 8 A 12.5 15 mΩ VDS = 30 V, ID = 8 A 42 VGS = 6 V, ID = 8 A S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Series Gate Resistance Qg Gate Charge Total (10 V) 14 Qgd Gate Charge Gate-to-Drain Qgs Gate Charge Gate-to-Source Qg(th) Gate Charge at Vth Qoss Output Charge td(on) Turn On Delay Time tr Rise Time td(off) Turn Off Delay Time tƒ Fall Time VGS = 0 V, VDS = 30 V, ƒ = 1 MHz VDS = 30 V, ID = 8 A VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 10 V, IDS = 8 A, RG = 0 Ω 1080 1400 pF 133 173 pF 4 5.2 pF 5.5 11 Ω 18 nC 2.3 nC 4.6 nC 3.4 nC 25 nC 6 ns 15 ns 5 ns 19 ns DIODE CHARACTERISTICS VSD Diode Forward Voltage Qrr Reverse Recovery Charge trr Reverse Recovery Time ISD = 8 A, VGS = 0 V 0.8 VDS= 30 V, IF = 8 A, di/dt = 300 A/μs 1 V 50 nC 30 ns 5.2 Thermal Information (TA = 25°C unless otherwise stated) THERMAL METRIC MIN TYP MAX RθJL Junction-to-Lead Thermal Resistance (1) 20 RθJA Junction-to-Ambient Thermal Resistance (1) (2) 75 (1) (2) UNIT °C/W RθJL is determined with the device mounted on a 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inches × 1.5-inches (3.81-cm × 3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RθJL is specified by design, whereas RθJA is determined by the user’s board design. Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu. Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: CSD88537ND 3 CSD88537ND SLPS455A – JANUARY 2014 – REVISED AUGUST 2014 www.ti.com 5.3 Typical MOSFET Characteristics (TA = 25°C unless otherwise stated) 50 50 45 45 IDS - Drain-to-Source Current (A) IDS - Drain-to-Source Current (A) Figure 1. Transient Thermal Impedance 40 35 30 25 20 15 VGS =10V VGS =8V VGS =6V 10 5 0 0 0.3 0.6 0.9 1.2 VDS - Drain-to-Source Voltage (V) 1.5 40 35 30 25 20 15 TC = 125°C TC = 25°C TC = −55°C 10 5 0 0 G001 1 2 3 4 VGS - Gate-to-Source Voltage (V) 5 6 G001 VDS = 5 V Figure 2. Saturation Characteristics 4 Submit Documentation Feedback Figure 3. Transfer Characteristics Copyright © 2014, Texas Instruments Incorporated Product Folder Links: CSD88537ND CSD88537ND www.ti.com SLPS455A – JANUARY 2014 – REVISED AUGUST 2014 Typical MOSFET Characteristics (continued) (TA = 25°C unless otherwise stated) 100000 Ciss = Cgd + Cgs Coss = Cds + Cgd Crss = Cgd 9 8 10000 C − Capacitance (pF) VGS - Gate-to-Source Voltage (V) 10 7 6 5 4 3 1000 100 10 2 1 0 0 3 6 9 Qg - Gate Charge (nC) ID = 8 A 12 1 15 0 6 12 G001 54 60 G001 VDS = 30 V Figure 4. Gate Charge Figure 5. Capacitance 3.6 30 RDS(on) - On-State Resistance (mΩ) VGS(th) - Threshold Voltage (V) 18 24 30 36 42 48 VDS - Drain-to-Source Voltage (V) 3.4 3.2 3 2.8 2.6 2.4 2.2 2 −75 −25 25 75 125 TC - Case Temperature (ºC) 24 21 18 15 12 9 6 3 0 175 TC = 25°C, I D = 8A TC = 125°C, I D = 8A 27 0 2 G001 4 6 8 10 12 14 16 VGS - Gate-to- Source Voltage (V) 18 20 G001 ID = 250 µA Figure 6. Threshold Voltage vs Temperature Figure 7. On-State Resistance vs Gate-to-Source Voltage 2 100 VGS = 6V VGS = 10V ISD − Source-to-Drain Current (A) Normalized On-State Resistance 2.2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 −75 −25 25 75 125 TC - Case Temperature (ºC) 175 TC = 25°C TC = 125°C 10 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 VSD − Source-to-Drain Voltage (V) G001 1 G001 ID = 8 A Figure 8. Normalized On-State Resistance vs Temperature Figure 9. Typical Diode Forward Voltage Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: CSD88537ND 5 CSD88537ND SLPS455A – JANUARY 2014 – REVISED AUGUST 2014 www.ti.com Typical MOSFET Characteristics (continued) (TA = 25°C unless otherwise stated) 100 10us 100us 1ms 10ms DC 100 10 1 0.1 0.1 1 10 VDS - Drain-to-Source Voltage (V) Single Pulse TC = 25ºC TC = 125ºC IAV - Peak Avalanche Current (A) IDS - Drain-to-Source Current (A) 1000 100 10 0.01 0.1 TAV - Time in Avalanche (mS) G001 1 G001 Max RθJL = 20°C/W Figure 10. Maximum Safe Operating Area Figure 11. Single Pulse Unclamped Inductive Switching IDS - Drain- to- Source Current (A) 21 18 15 12 9 6 3 0 −50 −25 0 25 50 75 100 125 TC - Case Temperature (ºC) 150 175 G001 Figure 12. Maximum Drain Current vs Temperature 6 Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: CSD88537ND CSD88537ND www.ti.com SLPS455A – JANUARY 2014 – REVISED AUGUST 2014 6 Device and Documentation Support 6.1 Trademarks NexFET is a trademark of Texas Instruments. 6.2 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 6.3 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: CSD88537ND 7 CSD88537ND SLPS455A – JANUARY 2014 – REVISED AUGUST 2014 www.ti.com 7 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 7.1 SO-8 Package Dimensions 1. All linear dimensions are in inches (millimeters). 2. This drawing is subject to change without notice. 3. Body length does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not exceed 0.006 (0.15) each side. 4. Body width does not include interlead flash. Interlead flash shall not exceed 0.017 (0.43) each side. 5. Reference JEDEC MS-012 variation AA. 8 Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: CSD88537ND CSD88537ND www.ti.com SLPS455A – JANUARY 2014 – REVISED AUGUST 2014 7.2 Recommended PCB Pattern and Stencil Opening 1. 2. 3. 4. All linear dimensions are in millimeters. This drawing is subject to change without notice. Publication IPC-7351 is recommended for alternate designs. Laser cutting apertures with trapezoidal walls and also rounding corners will offer better paste release. Customers should contact their board assembly site for stencil design recommendations. Refer to IPC-7525 for other stencil recommendations. 5. Customers should contact their board fabrication site for solder mask tolerances between and around signal pads. Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: CSD88537ND 9 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) CSD88537ND ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -55 to 150 88537N CSD88537NDT ACTIVE SOIC D 8 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -55 to 150 88537N (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of