NDT014L

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This literature is subject to all applicable copyright laws and is not for resale in any manner. August 1996 NDT014L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.Thesedevices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed. 2.8 A, 60 V. RDS(ON) = 0.2 Ω @ VGS = 4.5 V RDS(ON) = 0.16 Ω @ VGS = 10 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. _________________________________________________________________________________ D D G Absolute Maximum Ratings D G S S T A = 25°C unless otherwise noted Symbol Parameter NDT014L Units VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ± 20 V ID Drain Current ± 2.8 A - Continuous (Note 1a) - Pulsed PD TJ,TSTG Maximum Power Dissipation ± 10 (Note 1a) 3 (Note 1b) 1.3 (Note 1c) 1.1 Operating and Storage Temperature Range W -65 to 150 °C (Note 1a) 42 °C/W (Note 1) 12 °C/W THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case © 1997 Fairchild Semiconductor Corporation NDT014L Rev.D Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V 60 V TJ = 55°C 25 µA 250 µA IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V -100 nA 3 V ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(ON) Static Drain-Source On-Resistance VGS= 4.5 V, ID = 2.8 A 1 TJ = 125°C 0.8 TJ = 125°C VGS = 10 V, ID = 3.4 A ID(on) GFS On-State Drain Current Forward Transconductance VGS = 4.5 V , VDS = 5 V 5 VGS = 10 V, VDS = 5 V 10 1.5 1.1 2 0.17 0.2 0.22 0.36 0.12 0.16 Ω A VGS = 5 V, ID = 2.8 A 4.2 S VDS = 30 V, VGS = 0 V, f = 1.0 MHz 214 pF 70 pF 27 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2) tD(on) Turn - On Delay Time tr Turn - On Rise Time tD(off) Turn - Off Delay Time tf Turn - Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 30 V, ID = 3 A, VGEN = 10 V, RGEN = 12 Ω VDS = 10 V, ID = 2.8 A, VGS = 4.5 V 6 12 ns 14 25 ns 15 28 ns 10 18 ns 3.6 5 nC 0.8 nC 1.4 nC NDT014L Rev.D Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units 2.3 A 1.3 V 140 ns DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.3 A (Note 2) trr Reverse Recovery Time VGS = 0 V, IF = 2.3 A dIF/dt = 100 A/µs 0.85 Notes: 1. T J −T A T J −T A = R θJC+R = I 2D(t) × R DS(ON)@T J RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the R θJA(t) θCA (t) solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is defined by users. For general reference: Applications on 4.5"x5" FR-4 PCB under still air environment, typical RθJA is found to be: a. 42oC/W with 1 in2 of 2 oz copper mounting pad. b. 95oC/W with 0.066 in2 of 2 oz copper mounting pad. c. 110oC/W with 0.0123 in2 of 2 oz copper mounting pad. PD (t) = 1a 1b 1c Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. NDT014L Rev.D Typical Electrical Characteristics 2 10 5.0 4.5 6.0 6 R DS(on) , NORMALIZED 4.0 8 3.5 4 D DRAIN-SOURCE ON-RESISTANCE , DRAIN-SOURCE CURRENT (A) VGS = 10V 3.0 2 I 2.5 0 0 1 2 3 VDS, DRAIN-SOURCE VOLTAGE (V) 4 4.5 5.0 6.0 10 0.75 0 2 4 6 I , DRAIN CURRENT (A) D = 2.8A R DS(on) , NORMALIZED V GS = 4.5V 1.25 1 0.75 -25 0 25 50 75 100 T , JUNCTION TEMPERATURE (°C) 125 V GS TJ = 125°C 1.5 1.25 25°C 1 -55°C 0.75 0.5 150 0 2 4 6 I , DRAIN CURRENT (A) 25°C VGS(th) , NORMALIZED I D , DRAIN CURRENT (A) 8 125°C 6 4 2 2 V GS 3 4 , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 5 6 GATE-SOURCE THRESHOLD VOLTAGE T = -55°C J 1 10 Figure 4. On-Resistance Variation with Drain Current and Temperature. 10 VDS = 5V 8 D Figure 3. On-Resistance Variation with Temperature. 0 10 = 4.5V 1.75 J 0 8 Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. DRAIN-SOURCE ON-RESISTANCE R DS(ON) , NORMALIZED 4.0 1 2 I DRAIN-SOURCE ON-RESISTANCE 3.5 1.25 D 1.75 0.5 -50 VGS =3.0V 1.5 0.5 5 Figure 1. On-Region Characteristics. 1.5 1.75 1.2 VDS = VGS I D = 250µA 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 T , JUNCTION TEMPERATURE (°C) 125 150 J Figure 6. Gate Threshold Variation with Temperature. NDT014L Rev.D Typical Electrical Characteristics 10 V GS = 0V I D = 250µA I , REVERSE DRAIN CURRENT (A) 1.08 1.04 1 0.96 1 T J = 125°C 0.1 25°C 0.01 -55°C 0.001 S BV DSS , NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE 1.12 0.92 -50 -25 0 25 50 75 100 T J , JUNCTION TEMPERATURE (°C) 125 0.0001 0.2 150 700 10 , GATE-SOURCE VOLTAGE (V) Ciss 200 Coss 100 50 Crss 0.2 GS f = 1 MHz V GS = 0V 6 4 2 0.5 V 1 2 5 10 , DRAIN TO SOURCE VOLTAGE (V) 20 40 60 0 0 2 Q DS g Figure 9. Capacitance Characteristics. t d(on) t off tr t d(off) tf 90% 90% VOUT 10% DUT G 10 V OUT D R GEN 8 t on RL V IN 4 6 , GATE CHARGE (nC) Figure 10. Gate Charge Characteristics. V DD VGS 10V 20V 8 V CAPACITANCE (pF) V DS = 5V I D = 2.8A 500 10 0.1 1.2 Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. Figure 7. Breakdown Voltage Variation with Temperature. 20 0.4 0.6 0.8 1 V SD , BODY DIODE FORWARD VOLTAGE (V) 10% INVERTED 90% S V IN 50% 50% 10% PULSE WIDTH Figure 11. Switching Test Circuit. Figure 12. Switching Waveforms. NDT014L Rev.D Typical Thermal Characteristics 3.5 gFS, TRANSCONDUCTANCE (SIEMENS) 8 STEADY-STATE POWER DISSIPATION (W) VDS = 5V T = -55°C J 6 25°C 4 125°C 2 0 0 2 4 6 I , DRAIN CURRENT (A) 8 1a 3 2.5 2 1.5 1b 1c 1 4.5"x5" FR-4 Board o TA = 2 5 C Still Air 0.5 0 10 0.2 0.4 0.6 0.8 2oz COPPER MOUNTING PAD AREA (in 2 ) 1 D Figure 14. SOT-223 Maximum Steady- State Power Dissipation versus Copper Mounting Pad Area. Figure 13. Transconductance Variation with Drain Current and Temperature. 20 10 5 3 1a I D , DRAIN CURRENT (A) ID , STEADY-STATE DRAIN CURRENT (A) 4 1b 2 1c 4 .5"x5" FR-4 Board 1 T A GS 0.1 1s 10s VGS = 4.5V 0.1 SINGLE PULSE R θJA =See Note1c T A = 25°C s us ms 0m s DC = 4.5V 0 0 10 10 0.5 Still Air V 100 1 0.05 = 25 o C 10u IT IM )L ON S( RD 0.2 0.3 0.4 2 2oz COPPER MOUNTING PAD AREA (in ) 0.01 0.1 0.5 Figure 15. Maximum Steady- State Drain Current versus Copper Mounting Pad Area. 0.5 1 2 5 10 VDS , DRAIN-SOURCE VOLTAGE (V) 30 50 80 Figure 16. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0.5 D = 0.5 0.2 0.2 0.1 0.1 0.05 0.05 0.02 0.02 0.01 R JA (t) = r(t) * R JA θ θ R JA = See Note 1 c θ P(pk) 0.01 t1 0.005 Single Pulse 0.002 0.001 0.0001 t2 TJ - TA = P * R (t) θJA Duty Cycle, D = t 1 / t 2 0.001 0.01 0.1 1 10 100 300 t 1 , TIME (sec) Figure 17. Typical Transient Thermal Impedance Curve. Remark: Thermal characterization performed under the conditions of Note 1c. Should better thermal design employs, RθJA will be lower and reach thermal equivalent sooner. NDT014L Rev.D SOT-223 Tape and Reel Data and Package Dimensions SOT-223 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: F63TNR Label Antistatic Cover Tape SOT-223 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 2,500 units per 13" or 330cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 500 units per 7" or 177cm diameter reel. This and some other options are further described in the Packaging Information table. 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B SOT-223 Tape and Reel Data and Package Dimensions, continued SOT-223 Embossed Carrier Tape Configuration: Figure 3.0 P0 D0 T E1 F K0 Wc W E2 B0 Tc A0 D1 P1 User Direction of Feed Dimensions are in millimeter Pkg type SOT-223 (12mm) A0 6.83 +/-0.10 B0 7.42 +/-0.10 W 12.0 +/-0.3 D0 D1 1.55 +/-0.05 1.50 +/-0.10 E1 E2 1.75 +/-0.10 F 10.25 min P1 5.50 +/-0.05 P0 8.0 +/-0.1 4.0 +/-0.1 K0 1.88 +/-0.10 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). T Wc 0.292 +/0.0130 9.5 +/-0.025 0.06 +/-0.02 0.5mm maximum 20 deg maximum Typical component cavity center line B0 Tc 0.5mm maximum 20 deg maximum component rotation Typical component center line Sketch A (Side or Front Sectional View) A0 Component Rotation Sketch C (Top View) Component lateral movement Sketch B (Top View) SOT-223 Reel Configuration: Figure 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A max See detail AA Dim N 7" Diameter Option B Min Dim C See detail AA W3 13" Diameter Option Dim D min W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Tape Size Reel Option Dim A Dim B 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 5.906 150 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.469 – 0.606 11.9 – 15.4 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 7.00 178 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.469 – 0.606 11.9 – 15.4 12mm 7" Dia 7.00 177.8 12mm 13" Dia 13.00 330 Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL) July 1999, Rev. B 6.70 6.20 0.10 B C B 3.10 2.90 3.25 4 1.90 A 3.70 3.30 1 6.10 1.90 3 0.84 0.60 2.30 2.30 0.95 4.60 0.10 C B LAND PATTERN RECOMMENDATION SEE DETAIL A 1.80 MAX C 0.08 C 0.10 0.00 10° 5° GAGE PLANE R0.15±0.05 R0.15±0.05 10° TYP 0° 0.25 SEATING PLANE 10° 5° 0.60 MIN 1.70 DETAIL A SCALE: 2:1 0.35 0.20 7.30 6.70 NOTES: UNLESS OTHERWISE SPECIFIED A) DRAWING BASED ON JEDEC REGISTRATION TO-261C, VARIATION AA. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009. E) LANDPATTERN NAME: SOT230P700X180-4BN F) DRAWING FILENAME: MKT-MA04AREV3 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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