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DRV5015
SBAS915A – JUNE 2018 – REVISED APRIL 2019
DRV5015 Low-Voltage, High-Sensitivity, Digital-Latch Hall Effect Sensor
1 Features
3 Description
•
•
The DRV5015 is a low-voltage digital-latch Hall effect
sensor designed for high-speed and high-temperature
motor applications. Operating from a 2.5-V to 5.5-V
power supply, the device senses magnetic flux
density and presents a digital output based on
predefined magnetic thresholds.
1
•
•
•
•
•
Digital-latch hall effect sensor
High magnetic sensitivity:
– DRV5015A1: ±0.7 mT (typical)
– DRV5015A2: ±1.8 mT (typical)
– DRV5015A3: ±1.8 mT (inverted, typical)
Integrated hysteresis
Fast 30-kHz sensing bandwidth
2.5-V to 5.5-V operating VCC range
Open-drain output capable of 20-mA output
current
Operating temperature range: –40°C to +125°C
Alternating north and south magnetic poles are
required to toggle the output and integrated
hysteresis provides robust switching.
The device is offered in two magnetic threshold
options and an inverted output option. The high
magnetic sensitivity provides flexibility in low-cost
magnet selection and component placement.
The device performs consistently across a wide
ambient temperature range of –40°C to +125°C.
2 Applications
•
•
•
Brushless dc motor sensors
Incremental rotary encoding:
– Brushed dc motor feedback
– Motor speed (tachometer)
– Mechanical travel
– Fluid measurement
– Human interface knobs
– Wheel speed
E-bikes
Device Information(1)
PART NUMBER
PACKAGE
DRV5015
2.92 mm × 1.30 mm
(1) For all available packages, see the package option addendum
at the end of the data sheet.
Typical Schematic
Magnetic Response
VCC
VCC
BODY SIZE (NOM)
SOT-23 (3)
DRV5015
OUT
Controller
VCC
VCC
OUT
GPIO
GPIO
BHYS
GND
VCC
DRV5015
0V
VCC
B
OUT
north
BRP
GND
0 mT
BOP
south
BOP
south
DRV5015A1, DRV5015A2
OUT
VCC
BHYS
0V
B
north
BRP
0 mT
DRV5015A3
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
DRV5015
SBAS915A – JUNE 2018 – REVISED APRIL 2019
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Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
3
6.1
6.2
6.3
6.4
6.5
6.6
6.7
3
3
4
4
4
4
5
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Magnetic Characteristics...........................................
Typical Characteristics ..............................................
Detailed Description .............................................. 7
7.1 Overview ................................................................... 7
7.2 Functional Block Diagram ......................................... 7
7.3 Feature Description................................................... 7
7.4 Device Functional Modes........................................ 12
8
Application and Implementation ........................ 13
8.1 Application Information............................................ 13
8.2 Typical Applications ................................................ 13
8.3 What to Do and What Not to Do ............................. 16
9 Power Supply Recommendations...................... 17
10 Layout................................................................... 17
10.1 Layout Guidelines ................................................. 17
10.2 Layout Example .................................................... 17
11 Device and Documentation Support ................. 18
11.1
11.2
11.3
11.4
11.5
11.6
Documentation Support ........................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
18
18
18
18
18
18
12 Mechanical, Packaging, and Orderable
Information ........................................................... 18
4 Revision History
Changes from Original (June 2018) to Revision A
•
2
Page
Changed output voltage max value from VCC + 0.3 V to 6.0 V in the Absolute Maximum Ratings table ............................. 3
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5 Pin Configuration and Functions
DBZ Package
3-Pin SOT-23
Top View
VCC
1
3
OUT
GND
2
Not to scale
Pin Functions
PIN
NAME
TYPE
NO.
DESCRIPTION
GND
3
Ground
Ground reference.
OUT
2
Output
Open-drain output.
VCC
1
Power supply
2.5-V to 5.5-V power supply. Connect a ceramic capacitor with a value of at least 0.01 µF
between VCC and ground.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN
MAX
VCC
Power supply voltage
–0.3
6.0
VOUT
Output voltage
–0.3
6.0
V
IOUT
Output current
30
mA
BMAX
Magnetic flux density
Unlimited
T
TJ
Operating junction temperature
–40
150
°C
Tstg
Storage temperature
–65
150
°C
(1)
UNIT
V
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
over operating free-air temperature range (unless otherwise noted)
V(ESD)
(1)
(2)
Electrostatic discharge
VALUE
UNIT
Human body model (HBM), per ANSI/ESDA/JEDEC
JS-001 (1)
±5000
V
Charged device model (CDM), per JEDEC
specification JESD22-C101 (2)
±1500
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
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6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
VCC
Power supply voltage
2.5
5.5
VOUT
Output pin voltage
0
5.5
V
V
IOUT
Output sinking current
0
20
mA
TA
Operating ambient temperature
–40
125
°C
6.4 Thermal Information
DRV5015
THERMAL METRIC
(1)
SOT-23 (DBZ)
UNIT
3 PINS
RθJA
Junction-to-ambient thermal resistance
356
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
128
°C/W
RθJB
Junction-to-board thermal resistance
94
°C/W
YJT
Junction-to-top characterization parameter
11.4
°C/W
YJB
Junction-to-board characterization parameter
92
°C/W
(1)
For information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
6.5 Electrical Characteristics
at VCC = 2.5 V to 5.5 V, over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITION
MIN
TYP
MAX
UNIT
ICC
Operating supply current
2.3
2.8
mA
tON
Power-on time
40
70
µs
td
Propagation delay time (1)
B = BRP – 10 mT to BOP + 10 mT in 1 µs
13
25
µs
IOZ
High-impedance output leakage
current
5.5 V applied to OUT, while OUT is highimpedance
100
nA
VOL
Low-level output voltage
IOUT = 20 mA
0.4
V
(1)
0.15
See the Propagation Delay section for more information.
6.6 Magnetic Characteristics
at VCC = 2.5 V to 5.5 V, over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITION
MIN
TYP
20
30
MAX
UNIT
DRV5015A1, DRV5015A2, DRV5015A3
fBW
Sensing bandwidth
kHz
DRV5015A1
BOP
Magnetic threshold operate point
–0.2
0.7
2.0
mT
BRP
Magnetic threshold release point
–2.0
–0.7
0.2
mT
BHYS
Magnetic hysteresis: |BOP – BRP|
0.35
1.4
mT
DRV5015A2DRV5015A3
BOP
Magnetic threshold operate point
0.5
1.8
3.7
mT
BRP
Magnetic threshold release point
–3.7
–1.8
-0.5
mT
BHYS
Magnetic hysteresis: |BOP –BRP|
2.3
3.6
4
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6.7 Typical Characteristics
at TA = 25°C typical (unless otherwise noted)
2
Magnetic Threshold Release Point (mT)
Magnetic Threshold Operate Point (mT)
2
1
0
-1
BOP
-2
-40
-20
0
20
40
60
80 100
Ambeint Temperature (qC)
120
140
-1
-20
0
20
40
60
80 100
Ambient Temperature (qC)
120
140
160
D002
Figure 2. BRP Threshold vs Temperature (DRV5015A1)
2
Magnetic Threshold Release Point (mT)
Magnetic Threshold Operate Point (mT)
0
D001
2
1
0
-1
BOP
-2
2.5
3
3.5
4
4.5
Operating Supply Voltage (V)
5
BRP
1.5
1
0.5
0
-0.5
-1
-1.5
-2
2.5
5.5
3
D003
Figure 3. BOP Threshold vs Supply Voltage (DRV5015A1)
3.5
4
4.5
Operating Supply Voltage (V)
5
5.5
D004
Figure 4. BRP Threshold vs Supply Voltage (DRV5015A1)
3
Magnetic Threshold Release Point (mT)
4
Operating Supply Current (mA)
1
-2
-40
160
Figure 1. BOP Threshold vs Temperature (DRV5015A1)
3.5
3
2.5
2
1.5
1
VCC = 2.5 V
VCC = 4 V
VCC = 5.5 V
0.5
0
-40
BRP
-20
0
20
40
60
80 100
Ambient Temperature (qC)
120
140
160
2
1
0
-1
-2
BOP
-3
-40
-20
D005
Figure 5. ICC vs Temperature (DRV5015A1)
0
20
40
60
80 100
Ambient Temperature (qC)
120
140
160
D006
Figure 6. BOP Threshold vs Temperature
(DRV5015A2, DRV5015A3)
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Typical Characteristics (continued)
at TA = 25°C typical (unless otherwise noted)
3
BRP
Magnetic Threshold Operate Point (mT)
Magnetic Threshold Release Point (mT)
3
2
1
0
-1
-2
-3
-40
-20
0
20
40
60
80 100
Ambient Temperature (qC)
120
140
BOP
2
1
0
-1
-2
-3
2.5
160
Figure 7. BRP Threshold vs Temperature
(DRV5015A2, DRV5015A3)
5
5.5
D008
4
Operating Supply Current (mA)
BRP
2
1
0
-1
-2
-3
2.5
3
3.5
4
4.5
Operating Supply Voltage (V)
5
5.5
3.5
3
2.5
2
1.5
1
VCC = 2.5 V
VCC = 4 V
VCC = 5.5 V
0.5
0
-40
D009
Figure 9. BRP Threshold vs Supply Voltage
(DRV5015A2, DRV5015A3)
6
3.5
4
4.5
Operating Supply Voltage (V)
Figure 8. BOP Threshold vs Supply Voltage
(DRV5015A2, DRV5015A3)
3
Magnetic Threshold Release Point (mT)
3
D007
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-20
0
20
40
60
80 100
Ambient Temperature (qC)
120
140
160
D010
Figure 10. ICC vs Temperature
(DRV5015A2, DRV5015A3)
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7 Detailed Description
7.1 Overview
The DRV5015 is a magnetic sensor with a digital output that latches the most recent pole measured. During
power-up, in the absence of an external magnetic field, the DRV5015A1 and DRV5015A2 default to a low output
state and the DRV5015A3 defaults to a high output state. Applying a south magnetic pole near the top of the
package causes the DRV5015A1 and DRV5015A2 output to drive low, whereas a north magnetic pole causes
this output to drive high. Applying a south magnetic pole near the top of the package causes the DRV5015A3
output to drive high, whereas a north magnetic pole causes this output to drive low. The absence of a magnetic
field causes the output to continue to drive the current state, whether low or high.
The device integrates a Hall effect element, analog signal conditioning, offset cancellation circuits, amplifiers, and
comparators. These features provide stable performance across a wide temperature range and resistance to
mechanical stress.
7.2 Functional Block Diagram
Voltage
Regulator
VCC
0.01 µF
REF
GND
Element Bias
Offset Cancellation
Amp
Output
Control
OUT
Temperature
Compensation
7.3 Feature Description
7.3.1 Magnetic Flux Direction
As shown in Figure 11, the DRV5015 is sensitive to the magnetic field component that is perpendicular to the top
of the package.
B
SOT-23
PCB
Figure 11. Direction of Sensitivity
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Feature Description (continued)
Magnetic flux that travels from the bottom to the top of the package is considered positive in this document. This
condition exists when a south magnetic pole is near the top of the package. Magnetic flux that travels from the
top to the bottom of the package is considered negative. Figure 12 shows the flux direction polarity.
positive B
negative B
N
S
S
N
PCB
PCB
Figure 12. Flux Direction Polarity
8
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Feature Description (continued)
7.3.2 Magnetic Response
Figure 13 shows the device output response to stimulus and hysteresis.
OUT
VCC
BHYS
0V
B
BRP
north
BOP
0 mT
south
DRV5015A1, DRV5015A2
OUT
VCC
BHYS
0V
B
BRP
north
0 mT
BOP
south
DRV5015A3
Figure 13. Device Output Response to Stimulus
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Feature Description (continued)
7.3.3 Output Driver
Figure 14 shows the DRV5015 open-drain output structure. An open-drain output offers flexibility by enabling
system designers to interface to wide-range GPIO termination voltages. C1 represents the input capacitance of
the GPIO. R1 represents the pullup resistor connected to the termination voltage, VPULL-UP. The maximum
allowable value of VPULL_UP is 5.5 V. The value of R1 must be selected after proper considerations among the
system speed and the power dissipation through the pullup resistor.
VPULL_UP
R1
OUT
C1
DRV5015
Output
Control
GND
Figure 14. Open-Drain Output (Simplified)
7.3.4 Power-On Time
Figure 15 shows that after the VCC voltage is applied, the DRV5015 measures the magnetic field and sets the
output within the tON time.
VCC
2.5 V
tON
time
Output
Invalid
Valid
time
Figure 15. tON Definition
10
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Feature Description (continued)
7.3.5 Hall Element Location
The sensing element inside the device is in the center of both packages when viewed from the top. Figure 16
shows the tolerances and side-view dimensions.
SOT-23 Top View
133 µm
centered
±70 µm
133 µm
SOT-23 Side View
650 µm
±80 µm
Figure 16. Hall Element Location
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Feature Description (continued)
7.3.6 Propagation Delay
The DRV5015 samples the Hall element at a nominal sampling interval of every 16.67 µs to detect the presence
of a magnetic north or south pole. At each sampling point, the device takes the average of the current sampled
value and immediately preceding sampled value of the magnetic field. If this average value crosses the BOP or
BRP threshold, the device output changes to the corresponding state as defined by the Overview section.
Figure 17 shows the DRV5015A1 propagation delay analysis in the proximity of a magnetic south pole. The Hall
element of the DRV5015 experiences an increasing magnetic field as a magnetic south pole approaches near
the device. At time t2, the average magnetic field is (B2 + B1) / 2, which is below the BOP threshold of the device.
At time t3, the actual magnetic field has crossed the BOP threshold. However, the average (B3 + B2) / 2 is still less
than the BOP threshold. As such, the device waits for next sample time, t4, to start the output transition through
the analog signal chain. The propagation delay, td, is measured as the delay from the time the magnetic field
crosses the BOP threshold to the time output transitions.
Magnetic Field
Magnetic
Field Ramp
B6
B5
B4
B3
BOP Threshold
B2
Delay Through
Analog Signal Chain
B1
t1
Output
t2
t3
t4
t5
t6
Time
td
Time
DRV5015A1 Output Transition At Magnetic South Pole
Figure 17. Propagation Delay
7.4 Device Functional Modes
The DRV5015 has one mode of operation that applies when the are met.
12
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The DRV5015 is ideal for use in rotary applications for brushless DC (BLDC) motor sensors or incremental rotary
encoding.
For reliable functionality, the magnet must apply a flux density at the sensor greater than the corresponding
maximum BOP or BRP numbers specified in the table. Add additional margin to account for mechanical tolerance,
temperature effects, and magnet variation. Magnets generally produce weaker fields as temperature increases.
8.2 Typical Applications
8.2.1 BLDC Motor Sensors Application
VCC
3
GPIOs
Outputs
VCC
DRV5015
Microcontroller
DRV5015
PWM
GPIOs
6 Gate Drivers
& MOSFETs
DRV5015
Motor
Figure 18. BLDC Motor System
8.2.1.1 Design Requirements
Use the parameters listed in Table 1 for this design.
Table 1. Design Parameters
DESIGN PARAMETER
EXAMPLE VALUE
Number of motor phases
3
Motor RPM
15 kRPM
Number of magnet poles on the rotor
12
Magnetic material
Bonded neodymium
Maximum temperature inside the motor
125°C
Magnetic flux density peaks at the Hall
sensors at maximum temperature
±11 mT
Hall sensor VCC
5 V ± 10%
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8.2.1.2 Detailed Design Procedure
Three-phase brushless DC motors often use three Hall effect latch devices to measure the electrical angle of the
rotor and tell the controller how to drive the three wires. These wires connect to electromagnet windings, which
generate magnetic fields that apply forces to the permanent magnets on the rotor.
Space the three Hall sensors across the printed-circuit board (PCB) so that these sensors are 120 electrical
degrees apart. This configuration creates six 3-bit states with equal time duration for each electrical cycle, which
consists of one north and one south magnetic pole. From the center of the motor axis, the number of degrees to
space each sensor equals 2 / [number of poles] × 120°. In this design example, the first sensor is placed at 0°,
the second sensor is placed 20° rotated, and the third sensor is placed 40° rotated. Alternatively, a 3× degree
offset can be added or subtracted to any sensor, meaning that the third sensor can alternatively be placed at
40° – (3 × 20°) = –20°.
8.2.1.3 Application Curve
U
Phase
Voltages
V
W
Hall 1
DRV5011
Outputs
Hall 2
Hall 3
Electrical Angle
Mechanical Angle
0°
0°
120°
240°
30°
360°
60°
.
Figure 19. Phase Voltages and Hall Signals for a 3-Phase BLDC Motor
14
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8.2.2 Incremental Rotary Encoding Application
VCC
VCC
DRV5015
Controller
VCC
OUT
GPIO
GPIO
GND
VCC
DRV5015
VCC
OUT
GND
Figure 20. Incremental Rotary Encoding System
8.2.2.1 Design Requirements
Use the parameters listed in Table 2 for this design.
Table 2. Design Parameters
DESIGN PARAMETER
EXAMPLE VALUE
RPM range
45 kRPM
Number of magnet poles
8
Magnetic material
Ferrite
Air gap above the Hall sensors
2.5 mm
Magnetic flux density peaks at the Hall
sensors at maximum temperature
±7 mT
8.2.2.2 Detailed Design Procedure
Incremental encoders are used on knobs, wheels, motors, and flow meters to measure relative rotary movement.
By attaching a ring magnet to the rotating component and placing a DRV5015 nearby, the sensor generates
voltage pulses as the magnet turns. If directional information is also needed (clockwise versus counterclockwise),
a second DRV5015 can be added with a phase offset, and then the order of transitions between the two signals
describes the direction.
Creating this phase offset requires spacing the two sensors apart on the PCB, and an ideal 90° quadrature offset
is attained when the sensors are separated by half the length of each magnet pole, plus any integer number of
pole lengths. Figure 20 shows this configuration because the sensors are 1.5 pole lengths apart. One of the
sensors changes its output every 360° / 8 poles / 2 sensors = 22.5° of rotation. For reference, the TIDA-00480 TI
Design Considerations Automotive Hall Sensor Rotary Encoder uses a 66-pole magnet with changes every 2.7°.
The maximum rotational speed that can be measured is limited by the sensor bandwidth. Generally, the
bandwidth must be faster than two times the number of poles per second. In this design example, the maximum
speed is 45000 RPM, which involves 6000 poles per second. The DRV5015 sensing bandwidth is typically
30 kHz, which is five times the pole frequency. In systems where the sensor sampling rate is close to two times
the number of poles per second, most of the samples measure a magnetic field that is significantly lower than the
peak value, because the peaks only occur when the sensor and pole are perfectly aligned. In this case, add
margin by applying a stronger magnetic field that has peaks significantly higher than the maximum BOP.
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8.2.2.3 Application Curve
Two signals in quadrature provide movement and direction information. Figure 21 shows how each 2-bit state
has unique adjacent 2-bit states for clockwise and counterclockwise.
Voltage
Sensor 1
Sensor 2
time
Figure 21. Quadrature Output (2-Bit)
8.3 What to Do and What Not to Do
The Hall element is sensitive to magnetic fields that are perpendicular to the top of the package; therefore, the
correct magnet orientation must be used for the sensor to detect the field. Figure 22 shows correct and incorrect
orientations when using a ring magnet.
CORRECT
INCORRECT
Figure 22. Correct and Incorrect Magnet Orientations
16
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9 Power Supply Recommendations
The DRV5015 is powered from 2.5-V to 5.5-V DC power supplies. A decoupling capacitor close to the device
must be used to provide local energy with minimal inductance. TI recommends using a ceramic capacitor with a
value of at least 0.01 µF.
10 Layout
10.1 Layout Guidelines
Magnetic fields pass through most nonferromagnetic materials with no significant disturbance. Embedding Hall
effect sensors within plastic or aluminum enclosures and sensing magnets on the outside is common practice.
Magnetic fields also easily pass through most PCBs, which makes placing the magnet on the opposite side of
the PCB possible.
10.2 Layout Example
VCC
GND
OUT
Figure 23. Example Layout
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11 Device and Documentation Support
11.1 Documentation Support
11.1.1 Related Documentation
For related documentation see the following:
• TIDA-00480 TI Design Considerations Automotive Hall Sensor Rotary Encoder
• HALL-ADAPTER-EVM user's guide
11.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
11.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.4 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
11.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
18
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Copyright © 2018–2019, Texas Instruments Incorporated
Product Folder Links: DRV5015
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
DRV5015A1QDBZR
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
15A1
DRV5015A1QDBZT
ACTIVE
SOT-23
DBZ
3
250
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
15A1
DRV5015A2QDBZR
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
15A2
DRV5015A2QDBZT
ACTIVE
SOT-23
DBZ
3
250
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
15A2
DRV5015A3QDBZR
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
15A3
DRV5015A3QDBZT
ACTIVE
SOT-23
DBZ
3
250
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
15A3
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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