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DRV5021
SBAS913 – DECEMBER 2018
DRV5021 Low-Voltage, Unipolar, Digital-Switch Hall Effect Sensor
1 Features
3 Description
•
•
•
The DRV5021 device is a low-voltage, digital-switch,
Hall effect sensor for high-speed applications.
Operating from a 2.5-V to 5.5-V power supply, the
device senses magnetic flux density, and gives a
digital output based on predefined magnetic
thresholds.
1
•
•
•
•
•
•
Digital Unipolar-Switch Hall Sensor
2.5-V to 5.5-V Operating VCC Range
Magnetic Sensitivity Options (BOP, BRP):
– DRV5021A1: 2.9 mT, 1.8 mT
– DRV5021A2: 9.2 mT, 7.0 mT
– DRV5021A3: 17.9 mT, 14.1 mT
Fast 30-kHz Sensing Bandwidth
Open-Drain Output Capable of 20 mA
Optimized Low-Voltage Architecture
Integrated Hysteresis to Enhance Noise Immunity
Operating Temperature Range: –40°C to +125°C
Standard Industry Package:
– Surface-Mount SOT-23
2 Applications
•
•
•
•
•
•
•
•
This device senses magnetic fields perpendicular to
the face of the package. When the applied magnetic
flux density exceeds the magnetic operate point (BOP)
threshold, the open-drain output of the device drives
a low voltage. When the flux density decreases to
less than the magnetic release point (BRP) threshold,
the output goes to high impedance. The hysteresis
resulting from the separation of BOP and BRP helps
prevent output errors caused by input noise. This
configuration makes system designs more robust
against noise interference.
The device operates consistently across a wide
ambient temperature range of –40°C to +125°C.
Home Appliances
Industrial Valves, Solenoids
Limit Switches
General Proximity Sensing
Brushed DC Motor Feedback
Docking Detection
Door Open and Close Detection
Pulse Counting
Device Information(1)
PART NUMBER
DRV5021
PACKAGE
SOT-23 (3)
BODY SIZE (NOM)
2.90 mm × 1.30 mm
(1) For all available packages, see the package option addendum
at the end of the data sheet.
Typical Application Schematic
Magnetic Response
VCC
OUT
Bhys
DRV5021
Controller
VCC
OUT
GPIO
B (mT)
BRP
BOF
BOP
GND
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
DRV5021
SBAS913 – DECEMBER 2018
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
3
6.1
6.2
6.3
6.4
6.5
6.6
6.7
3
3
4
4
4
4
5
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Magnetic Characteristics...........................................
Typical Characteristics ..............................................
7.4 Device Functional Modes........................................ 13
8
Application and Implementation ........................ 14
8.1 Application Information............................................ 14
8.2 Typical Applications ................................................ 14
9 Power Supply Recommendations...................... 17
10 Layout................................................................... 17
10.1 Layout Guidelines ................................................. 17
10.2 Layout Example .................................................... 17
11 Device and Documentation Support ................. 18
11.1
11.2
11.3
11.4
11.5
11.6
Detailed Description .............................................. 7
7.1 Overview ................................................................... 7
7.2 Functional Block Diagram ......................................... 7
7.3 Feature Description................................................... 7
Documentation Support ........................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
18
18
18
18
18
18
12 Mechanical, Packaging, and Orderable
Information ........................................................... 18
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
2
DATE
REVISION
NOTES
December 2018
*
Initial release.
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5 Pin Configuration and Functions
DBZ Package
3-Pin SOT-23
Top View
VCC
1
3
OUT
GND
2
Not to scale
Pin Functions
PIN
NAME
TYPE
DBZ
DESCRIPTION
GND
3
GND
OUT
2
Output
Ground pin
Hall sensor open-drain output. The open drain requires a pullup resistor.
VCC
1
Power
2.5-V to 5.5-V power supply. Bypass this pin to the GND pin with a 0.1-μF (minimum) ceramic
capacitor rated for VCC.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN
MAX
Power supply voltage (VCC)
–0.3
6.0
Output voltage (OUT)
–0.3
6.0
V
30
mA
Output current (OUT)
Magnetic flux density, BMAX
UNIT
V
Unlimited
T
Operating junction temperature, TJ
–40
140
°C
Storage temperature, Tstg
–65
150
°C
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
over operating free-air temperature range (unless otherwise noted)
V(ESD)
(1)
(2)
Electrostatic discharge
VALUE
UNIT
Human body model (HBM), per
ANSI/ESDA/JEDEC JS-001 (1)
±4000
V
Charged device model (CDM), per
JEDEC specification JESD22-C101 (2)
±1000
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
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6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
VCC
Power supply voltage range
2.5
5.5
VO
Output pin voltage
0
5.5
V
V
IOUT
Output sinking current
0
20
mA
TA
Operating ambient temperature
–40
125
°C
6.4 Thermal Information
DRV5021
THERMAL METRIC
(1)
SOT-23 (DBZ)
UNIT
3 PINS
RθJA
Junction-to-ambient thermal resistance
356
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
128
°C/W
RθJB
Junction-to-board thermal resistance
94
°C/W
YJT
Junction-to-top characterization parameter
11.4
°C/W
YJB
Junction-to-board characterization parameter
92
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.5 Electrical Characteristics
for VCC = 2.5 V to 5.5 V, over operating free-air temperature range (unless otherwise noted)
TYP
MAX
ICC
Operating supply current
PARAMETER
TEST CONDITION
2.3
2.8
mA
tON
Power-on time
40
70
µs
13
25
µs
100
nA
td
Propagation delay time (1)
B = BRP – 10 mT to BOP + 10 mT in
1 µs
IOZ
High-impedance output leakage
current
5.5 V applied to OUT, while OUT is
high-impedance
VOL
Low-level output voltage
IOUT = 20 mA
RDS(on)
Output FET resistance
IOUT = 5 mA, VCC = 3.3 V
(1)
MIN
0.15
0.4
8
UNIT
V
Ω
See the Propagation Delay section for more information.
6.6 Magnetic Characteristics
for VCC = 2.5 V to 5.5 V, over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITION
MIN
TYP
MAX
UNIT
DRV5021A1, DRV5021A2, DRV5021A3
fBW
Sensing bandwidth
30
kHz
DRV5021A1
BOP
Magnetic threshold Operate Point
1.4
2.9
4.4
mT
BRP
Magnetic threshold Release Point
0.4
1.8
3.0
mT
BHYS
Magnetic hysteresis: |BOP – BRP|
0.2
1.1
2.5
mT
BOP
Magnetic threshold Operate Point
5.5
9.2
12.5
mT
BRP
Magnetic threshold Release Point
3.6
7.0
9.5
mT
BHYS
Magnetic hysteresis: |BOP –BRP|
1.1
2.2
4.5
mT
BOP
Magnetic threshold Operate Point
9.5
17.9
22.7
mT
BRP
Magnetic threshold Release Point
6.7
14.1
18.5
mT
BHYS
Magnetic hysteresis: |BOP – BRP|
1.6
3.8
6.0
mT
DRV5021A2
DRV5021A3
4
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6.7 Typical Characteristics
5
5
BOP
BRP
HYSTERESIS
4.5
4
Magnetic Field (mT)
Magnetic Field (mT)
4
3.5
3
2.5
2
1.5
3.5
3
2.5
2
1.5
1
1
0.5
0.5
0
-40
-20
0
20
40
60
80
Temperature (qC)
100
120
BOP
BRP
HYSTERESIS
4.5
0
-40
140
-20
0
DRV5021A1, VCC = 3.3 V
Magnetic Field (mT)
Magnetic Field (mT)
0
20
40
60
80
Temperature (qC)
100
120
140
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
-40
-20
0
40
60
80
Temperature (qC)
Magnetic Field (mT)
D013
40
60
80
Temperature (qC)
100
120
140
D014
Figure 4. Magnetic Threshold vs Temperature
Magnetic Field (mT)
20
140
DRV5021A2, VCC = 5.0 V
BOP
BRP
HYSTERESIS
0
20
D011
Figure 3. Magnetic Threshold vs Temperature
-20
120
BOP
BRP
HYSTERESIS
DRV5021A2, VCC = 3.3 V
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
-40
100
Figure 2. Magnetic Threshold vs Temperature
BOP
BRP
HYSTERESIS
-20
40
60
80
Temperature (qC)
DRV5021A1, VCC = 5.0 V
Figure 1. Magnetic Threshold vs Temperature
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
-40
20
D010
100
120
140
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
-40
BOP
BRP
HYSTERESIS
-20
D012
D003
DRV5021A3, VCC = 3.3 V
0
20
40
60
80
Temperature (qC)
100
120
140
D015
DRV5021A3, VCC = 5.0 V
Figure 5. Magnetic Threshold vs Temperature
Figure 6. Magnetic Threshold vs Temperature
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Typical Characteristics (continued)
5
5
VCC = 2.5V
VCC = 4.0V
VCC = 5.5V
4.5
4
Supply Current (mA)
Supply Current (mA)
4
3.5
3
2.5
2
1.5
3.5
3
2.5
2
1.5
1
1
0.5
0.5
0
-40
-20
0
20
40
60
80
Temperature (C)
100
120
VCC = 2.5V
VCC = 4.0V
VCC = 5.5V
4.5
0
-40
140
-20
0
20
D016
DRV5021A1
40
60
80
Temperature (C)
100
120
140
D017
DRV5021A2
Figure 7. Supply Current vs Temperature
Figure 8. Supply Current vs Temperature
5
VCC = 2.5V
VCC = 4.0V
VCC = 5.5V
4.5
Supply Current (mA)
4
3.5
3
2.5
2
1.5
1
0.5
0
-40
-20
0
20
40
60
80
Temperature (C)
100
120
140
D018
D009
DRV5021A3
Figure 9. Supply Current vs Temperature
6
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7 Detailed Description
7.1 Overview
The DRV5021 device is a spinning-current Hall sensor with a digital output for magnetic-sensing applications.
The DRV5021 can be powered with a supply voltage between 2.5 V and 5.5 V.
The field polarity is defined as follows: a south pole near the marked side of the package is a positive magnetic
field. A north pole near the marked side of the package is a negative magnetic field. The output state depends on
the magnetic field perpendicular to the package.
A strong south pole near the marked side of the package causes the output to pull low. A weak south pole, the
absence of a field, or any north pole makes the output high impedance. Hysteresis is included in between the
operate point and the release point to prevent toggling near the magnetic threshold.
An external pullup resistor is required on the OUT pin. The OUT pin can be pulled up to VCC, or to a different
voltage supply. This feature allows for easier interfacing with controller circuits.
7.2 Functional Block Diagram
0.1 F
(min)
VCC
Voltage
Regulator
Oscillator
REF
OUT
Output
Control
Element Bias
Offset Cancellation
Amp
Temperature
Compensation
GND
7.3 Feature Description
7.3.1 Field Direction Definition
As shown in Figure 10, the DRV5021 is sensitive to the magnetic field component that is perpendicular to the top
of the package.
B
SOT-23
PCB
Figure 10. Direction of Sensitivity
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Feature Description (continued)
Figure 11 shows that a positive magnetic field is defined as a south pole near the marked side of the package.
Positive B
Negative B
N
S
S
N
PCB
PCB
N = North pole, S = South pole
Figure 11. Field Direction Definition
7.3.2 Device Output
If the device is powered on with a magnetic field strength between BRP and BOP, then the device output is
indeterminate. If the field strength is greater than BOP, then the output is pulled low. If the field strength is less
than BRP, then the output is released.
OUT
Bhys
B (mT)
BRP
BOF
BOP
Figure 12. Output State
8
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Feature Description (continued)
7.3.3 Power-On Time
After applying VCC to the DRV5021, ton must elapse before the OUT pin is valid. In case 1 (Figure 13) and case 2
(Figure 14), the output is defined assuming that magnetic field BAPPLIED > BOP, and BAPPLIED < BRP, respectively.
VCC
t (s)
B (mT)
BAPPL IED
BOP
BRP
t (s)
OUT
Vali d O utp ut
t (s)
ton
Figure 13. Case 1: Power On When B > BOP
VCC
t (s)
B (mT)
BOP
BRP
BAPPL IED
t (s)
OUT
Vali d O utp ut
t (s)
ton
Figure 14. Case 2: Power On When B < BRP
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Feature Description (continued)
If the device is powered on with BRP < BAPPLIED < BOP, then the device output remains in indeterminate state until
the magnetic field changes. After the change in magnetic field results in a condition that meets either BOP <
BAPPLIED or BRP > BAPPLIED, the output turns to valid state after td time elapses. Case 3 (Figure 15) and case 4
(Figure 16) show examples of this behavior.
VCC
t (s)
B (mT)
BOP
BAPPL IED
BRP
t (s)
OUT
Valid Output
t (s)
td
ton
Figure 15. Case 3: Power On When BRP < B < BOP, Followed by B > BOP
VCC
t (s)
B (mT)
BOP
BAPPL IED
BRP
t (s)
OUT
Vali d O utp ut
t (s)
td
ton
Figure 16. Case 4: Power On When BRP < B < BOP, Followed by B < BRP
10
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Feature Description (continued)
7.3.4 Hall Element Location
The sensing element inside the device is in the center of both packages when viewed from the top. Figure 17
shows the tolerances and side-view dimensions.
SOT-23 Top View
133 µm
centered
±70 µm
133 µm
SOT-23 Side View
650 µm
±80 µm
Figure 17. Hall Element Location
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Feature Description (continued)
7.3.5 Propagation Delay
The DRV5021 samples the Hall element at a nominal sampling period of 16.67 µs to detect the presence of a
magnetic north or south pole. At each sampling point, the device takes the average of the current sampled value
and immediately preceding sampled value of the magnetic field. If this average value crosses the BOP or BRP
threshold, the device output changes according to the transfer function.
Figure 18 shows the DRV5021 propagation delay analysis in the proximity of a magnetic south pole. The Hall
element of the DRV5021 experiences an increasing magnetic field as the magnetic south pole approaches near
the device. At time t2, the average magnetic field is (B2 + B1) / 2, which is less than the BOP threshold of the
device. At time t3, the actual magnetic field has crossed the BOP threshold. However, the average (B3 + B2) / 2 is
still less than the BOP threshold. Thus, the device waits for next sample time, t4, to start the output transition
through the analog signal chain. The propagation delay, td, is measured as the delay from the time the magnetic
field crosses the BOP threshold to the time output transitions.
Magne tic Fiel d
Magne tic
Field Ramp
B6
B5
B4
B3
BOP Threshold
B2
Delay Thro ugh
Ana log Signa l Chain
B1
t1
Output
t2
t3
t4
t5
t6
Time
td
Time
Figure 18. Propagation Delay
12
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Feature Description (continued)
7.3.6 Output Stage
The DRV5021 output stage uses an open-drain NMOS transistor that is rated to sink up to 20 mA of current. For
proper operation, calculate the value of pullup resistor R1 using Equation 1.
Vref max
V min
d R1 d ref
20 mA
100 PA
(1)
The size of R1 is a tradeoff between the OUT rise time and the current when OUT is pulled low. A lower current
is generally better; however, faster transitions and bandwidth require a smaller resistor for faster switching.
In addition, the value of R1 must be > 500 Ω in order to make sure that the output driver can pull the OUT pin
close to GND.
NOTE
Vref is not restricted to VCC. The allowable voltage range of this pin is specified in the
Recommended Operating Conditions.
Vref
R1
OUT
C2
Gate
Drive
GND
ISINK
Figure 19. Open-Drain Output
Select a value for C2 based on the system bandwidth specifications shown in Equation 2.
1
u ¦BW +]
2S u R1 u C2
(2)
Most applications do not require this C2 filtering capacitor.
7.4 Device Functional Modes
The DRV5021 device is active only when VCC is between 2.5 V and 5.5 V.
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The DRV5021 device is used in magnetic-field sensing applications.
8.2 Typical Applications
8.2.1 Proximity Sensing Circuit
C2
680 pF
(Optional)
OUT
2
GND
R1
10 k
3
VCC
VCC
1
C1
0.1 …F
Figure 20. Proximity Sensing Circuit
8.2.1.1 Design Requirements
For this design example, use the parameters listed in Table 1 as the input parameters.
Table 1. Design Parameters
REFERENCE
EXAMPLE VALUE
Supply voltage
DESIGN PARAMETER
VCC
3.2 V to 3.4 V
System bandwidth
ƒBW
10 kHz
8.2.1.2 Detailed Design Procedure
Table 2 shows the external components needed to create this design example.
Table 2. External Components
COMPONENT
14
RECOMMENDED
VCC
GND
A 0.1-µF ceramic capacitor rated for VCC
C2
OUT
GND
Optional: Place a ceramic capacitor to GND
R1
(1)
CONNECTED BETWEEN
C1
OUT
VCC
(1)
Requires a pullup resistor
Pullup resistor may be connected to a voltage source other than VCC; see the Recommended Operating Conditions for the valid range of
the output pin voltage.
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8.2.1.2.1 Configuration Example
In a 3.3-V system, 3.2 V ≤ Vref ≤ 3.4 V. Use Equation 3 to calculate the allowable range for R1.
Vref max
V min
d R1 d ref
20 mA
100 PA
(3)
For this design example, use Equation 4 to calculate the allowable range of R1.
3.4 V
3.2 V
d R1 d
20 mA
100 PA
(4)
Therefore:
170 Ω ≤ R1 ≤ 32 kΩ
(5)
After finding the allowable range of R1 (Equation 5), select a value between 500 Ω and 32 kΩ for R1.
Assuming a system bandwidth of 10 kHz, use Equation 6 to calculate the value of C2.
1
u ¦BW +]
2S u R1 u C2
(6)
For this design example, use Equation 7 to calculate the value of C2.
1
2 u 10 kHz
2S u R1 u C2
(7)
An R1 value of 10 kΩ and a C2 value less than 820 pF satisfy the requirement for a 10-kHz system bandwidth.
For R1 = 10 kΩ and C2 = 680 pF, the corner frequency for the low-pass filter is 23.4 kHz.
8.2.1.3 Application Curves
OUT
OUT
R1 = 10-kΩ pullup, C2 = 680 pF
R1 = 10-kΩ pullup resistor, no C2 capacitor
Figure 22. 10-kHz Switching Magnetic Field
Figure 21. 10-kHz Switching Magnetic Field
0
-2
Magnitude (dB)
-4
-6
-8
-10
-12
-14
100
1000
10000
Frequency (Hz)
100000
D011
R1 = 10-kΩ pullup resistor, C2 = 680 pF
Figure 23. Low-Pass Filtering
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8.2.2 Alternative Two-Wire Application
For systems that require a minimal wire count, connect the device output to VCC through a resistor, and sense
the total supplied current near the controller. Use a shunt resistor or other circuitry to sense the current.
R1
+
VCC
OUT 2
±
1
C1
GND
3
Current
sense
Controller
Figure 24. 2-Wire Application
8.2.2.1 Design Requirements
Table 3 lists the related design parameters.
Table 3. Design Parameters
REFERENCE
EXAMPLE VALUE
Supply voltage
DESIGN PARAMETER
VCC
5V
OUT resistor
R1
1 kΩ
Bypass capacitor
C1
0.1 µF
Current when B < BRP
IRELEASE
About 2.3 mA
Current when B > BOP
IOPERATE
About 7.3 mA
8.2.2.2 Detailed Design Procedure
When the open-drain output of the device is high-impedance, current through the path equals the ICC of the
device (approximately 2.3 mA).
When the output pulls low, a parallel current path is added, equal to VCC / (R1 + rDS(on)). Using 5 V and 1 kΩ, the
parallel current is approximately 5 mA, making the total current approximately 7.3 mA.
Local bypass capacitor C1 must be at least 0.1 µF. Use a larger value capacitor if there is high inductance in the
power line interconnect.
16
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DRV5021
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SBAS913 – DECEMBER 2018
9 Power Supply Recommendations
The DRV5021 device is designed to operate from an input voltage supply (VM) range between 2.5 V and 5.5 V.
A 0.1-µF (minimum) ceramic capacitor rated for VCC must be placed as close to the DRV5021 device as
possible.
10 Layout
10.1 Layout Guidelines
Place the bypass capacitor near the DRV5021 device for efficient power delivery with minimal inductance. Place
the external pullup resistor near the microcontroller input to provide the most stable voltage at the input.
Alternatively, an integrated pullup resistor within the GPIO of the microcontroller can be used.
Generally, PCB copper planes underneath the DRV5021 have no effect on magnetic flux, and do not interfere
with device performance because copper is not a ferromagnetic material. However, If nearby system components
contain iron or nickel, they may redirect magnetic flux in unpredictable ways.
10.2 Layout Example
VCC
OUT
GND
Figure 25. DRV5021 Layout Example
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11 Device and Documentation Support
11.1 Documentation Support
11.1.1 Related Documentation
For related documentation see the following:
• Texas Instrument, HALL-ADAPTER-EVM User's Guide
• Texas Instrument, Understanding and Applying Hall Effect Sensor Datasheets Application Report
11.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
11.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.4 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
11.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
18
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Product Folder Links: DRV5021
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
DRV5021A1QDBZR
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
21A1
DRV5021A1QDBZT
ACTIVE
SOT-23
DBZ
3
250
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
21A1
DRV5021A2QDBZR
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
21A2
DRV5021A2QDBZT
ACTIVE
SOT-23
DBZ
3
250
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
21A2
DRV5021A3QDBZR
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
21A3
DRV5021A3QDBZT
ACTIVE
SOT-23
DBZ
3
250
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
21A3
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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