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INA190
SBOS863D – MARCH 2018 – REVISED NOVEMBER 2019
INA190 Bidirectional, Low-Power, Zero-Drift, Wide Dynamic Range,
Precision Current-Sense Amplifier With Enable
1 Features
3 Description
•
The INA190 is a low-power, voltage-output, currentshunt monitor (also called a current-sense amplifier).
This device is commonly used for overcurrent
protection, precision current measurement for system
optimization, or in closed-loop feedback circuits. The
INA190 can sense drops across shunts at commonmode voltages from –0.2 V to +40 V, independent of
the supply voltage.
1
•
•
•
•
•
Low input bias currents: 500 pA (typ)
(enables microamp current measurement)
Low power:
– Low supply voltage, VS: 1.7 V to 5.5 V
– Low shutdown current: 100 nA (max)
– Low quiescent current: 50 μA at 25°C (typ)
Accuracy:
– Common-mode rejection ratio: 132 dB (min)
– Gain error: ±0.2% (A1 device)
– Gain drift: 7 ppm/°C (max)
– Offset voltage, VOS: ±15 μV (max)
– Offset drift: 80 nV/°C (max)
Wide common-mode voltage: –0.2 V to +40 V
Bidirectional current sensing capability
Gain options:
– INA190A1: 25 V/V
– INA190A2: 50 V/V
– INA190A3: 100 V/V
– INA190A4: 200 V/V
– INA190A5: 500 V/V
The low input bias current of the device permits the
use of larger current-sense resistors, thus providing
accurate current measurements in the microamp
range. The low offset voltage of the zero-drift
architecture extends the dynamic range of the current
measurement. This feature allows for smaller sense
resistors with lower power loss, while still providing
accurate current measurements.
The INA190 operates from a single 1.7-V to 5.5-V
power supply, and draws a maximum of 65 µA of
supply current when enabled; only 0.1 µA when
disabled. Five fixed gain options are available: 25
V/V, 50 V/V, 100 V/V, 200 V/V, or 500 V/V. The
device is specified over the operating temperature
range of –40°C to +125°C, and offered in UQFN,
SC70, and SOT-23 packages.
Device Information(1)
2 Applications
•
•
•
•
•
•
PART NUMBER
Standard notebook PC
Smartphone
Consumer battery charger
Baseband unit (BBU)
Merchant network and server PSU
Battery test
INA190
PACKAGE
BODY SIZE (NOM)
SC70 (6)
2.00 mm x 1.25 mm
SOT-23 (8)
1.60 mm × 2.90 mm
UQFN (10)
1.80 mm × 1.40 mm
(1) For all available packages, see the package option addendum
at the end of the datasheet.
Typical Application
Bus Voltage
±0.2 V to +40 V
0.5 nA
(typ)
Supply Voltage
1.7 V to 5.5 V
RSENSE
LOAD
0.1 …F
0.5 nA
(typ)
ENABLE(1)
VS
IN±
INA190
OUT
ADC
Microcontroller
IN+
GND
REF
(1) The ENABLE pin is available only
in the DDF and RSW packages.
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
INA190
SBOS863D – MARCH 2018 – REVISED NOVEMBER 2019
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
4
4
4
4
5
7
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Typical Characteristics ..............................................
Detailed Description ............................................ 13
7.1 Overview ................................................................. 13
7.2 Functional Block Diagram ....................................... 13
7.3 Feature Description................................................. 14
7.4 Device Functional Modes........................................ 16
8
Application and Implementation ........................ 20
8.1 Application Information............................................ 20
8.2 Typical Applications ................................................ 25
9 Power Supply Recommendations...................... 26
10 Layout................................................................... 27
10.1 Layout Guidelines ................................................. 27
10.2 Layout Examples................................................... 27
11 Device and Documentation Support ................. 30
11.1
11.2
11.3
11.4
11.5
11.6
Documentation Support ........................................
Receiving Notification of Documentation Updates
Support Resources ...............................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
30
30
30
30
30
30
12 Mechanical, Packaging, and Orderable
Information ........................................................... 30
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision C (April 2019) to Revision D
Page
•
Added DDF (SOT-23-8) package and associated content to data sheet .............................................................................. 1
•
Changed gain drift and offset drift accuracy bullets to match values in the Electrical Characteristics table.......................... 1
Changes from Revision B (September 2018) to Revision C
Page
•
Added DCK (SC70) package to data sheet............................................................................................................................ 1
•
Changed front page for clarity ................................................................................................................................................ 1
•
Changed all instances of VVS to VS for consistency ............................................................................................................... 1
•
Changed section title from Output Signal Conditioning to Signal Conditioning and reworded section for clarity ............... 22
•
Changed Figure 41, Differential Input Impedance vs Temperature, to reflect improved device performance..................... 22
•
Changed location of Common-Mode Voltage Transients section from Power Supply Recommendations to
Application and Implementation ........................................................................................................................................... 24
Changes from Revision A (June 2018) to Revision B
•
2
Page
Changed device status from Advance Information to Production Data.................................................................................. 1
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INA190
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SBOS863D – MARCH 2018 – REVISED NOVEMBER 2019
5 Pin Configuration and Functions
DCK Package
6-Pin SC70
Top View
DDF Package
8-Pin Thin SOT-23
Top View
REF
1
6
OUT
GND
2
5
VS
3
4
VS
1
8
IN±
IN±
ENABLE
2
7
IN+
IN+
REF
3
6
NC
GND
4
5
OUT
Not to scale
Not to scale
OUT
GND
REF
10
9
8
RSW Package
10-Pin Thin UQFN
Top View
ENABLE
NC
2
6
VS
NC
IN±
IN+
5
7
4
1
3
NC
Not to scale
Pin Functions
PIN
NAME
DCK
DDF
RSW
TYPE
DESCRIPTION
ENABLE
—
2
7
Digital
input
Enable pin. When this pin is driven to VS, the device is on and functions as a
current sense amplifier. When this pin is driven to GND, the device is off, the
supply current is reduced, and the output is placed in a high-impedance state.
This pin must be driven externally, or connected to VS if not used. DDF and RSW
packages only.
GND
2
4
9
Analog
Ground
IN–
5
8
4
Analog
input
Current-sense amplifier negative input. For high-side applications, connect to load
side of sense resistor. For low-side applications, connect to ground side of sense
resistor.
IN+
4
7
3
Analog
input
Current-sense amplifier positive input. For high-side applications, connect to bus
voltage side of sense resistor. For low-side applications, connect to load side of
sense resistor.
NC
—
6
1, 2, 5
—
OUT
6
5
10
Analog
output
OUT pin. This pin provides an analog voltage output that is the gained up voltage
difference from the IN+ to the IN– pins, and is offset by the voltage applied to the
REF pin.
REF
1
3
8
Analog
input
Reference input. Enables bidirectional current sensing with an externally applied
voltage.
VS
3
1
6
Analog
Power supply, 1.7 V to 5.5 V
Not internally connected. Either float these pins or connect to any voltage
between GND and VS.
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INA190
SBOS863D – MARCH 2018 – REVISED NOVEMBER 2019
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN
VS
MAX
Supply voltage
6
Differential (VIN+) – (VIN–) (2)
VIN+, VIN– Analog inputs
VENABLE
VIN+, VIN–, with respect to GND (3)
–42
42
GND – 0.3
42
ENABLE
GND – 0.3
6
REF, OUT (3)
GND – 0.3
(VS) + 0.3
Input current into any pin (3)
TA
Operating temperature
TJ
Junction temperature
Tstg
Storage temperature
(1)
(2)
(3)
–55
–65
UNIT
V
V
V
V
5
mA
150
°C
150
°C
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
VIN+ and VIN– are the voltages at the IN+ and IN– pins, respectively.
Input voltage at any pin may exceed the voltage shown if the current at that pin is limited to 5 mA.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±3000
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
±1000
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
VCM
Common-mode input range
GND – 0.2
40
V
VIN+, VIN–
Input pin voltage range
GND – 0.2
40
V
VS
Operating supply voltage
1.7
5.5
V
VREF
Reference pin voltage range
GND
VS
V
TA
Operating free-air temperature
–40
125
°C
6.4 Thermal Information
INA190
THERMAL METRIC
(1)
DCK (SC70)
DDF (SOT23)
RSW (UQFN)
6 PINS
8 PINS
10 PINS
UNIT
RθJA
Junction-to-ambient thermal resistance
137.2
170.7
163.8
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
38.4
132.7
78.7
°C/W
RθJB
Junction-to-board thermal resistance
57.1
65.3
93.3
°C/W
ΨJT
Junction-to-top characterization parameter
5.1
45.7
4.1
°C/W
ΨJB
Junction-to-board characterization parameter
56.6
65.2
92.8
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
N/A
N/A
°C/W
(1)
4
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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SBOS863D – MARCH 2018 – REVISED NOVEMBER 2019
6.5 Electrical Characteristics
at TA = 25°C, VSENSE = VIN+ – VIN–, VS = 1.8 V to 5.0 V, VIN+ = 12 V, VREF = VS / 2, and VENABLE = VS (unless otherwise noted)
PARAMETER
CONDITIONS
MIN
TYP
132
150
MAX
UNIT
INPUT
CMRR
Common-mode
rejection ratio
VSENSE = 0 mV, VIN+ = –0.1 V to 40 V, TA = –40°C to +125°C
(1)
dB
VOS
Offset voltage, RTI
VS = 1.8 V, VSENSE = 0 mV
–3
±15
µV
dVOS/dT
Offset drift, RTI
VSENSE = 0 mV, TA = –40°C to +125°C
10
80
nV/°C
PSRR
Power-supply
rejection ratio, RTI
VSENSE = 0 mV, VS = 1.7 V to 5.5 V
–1
±5
µV/V
IIB
Input bias current
VSENSE = 0 mV
0.5
3
nA
IIO
Input offset current
VSENSE = 0 mV
±0.07
nA
OUTPUT
G
Gain
A1 devices
25
A2 devices
50
A3 devices
100
A4 devices
200
A5 devices
EG
RVRR
500
Gain error
VOUT = 0.1 V to VS – 0.1 V
Gain error drift
TA = –40°C to +125°C
Nonlinearity error
VOUT = 0.1 V to VS – 0.1 V
Reference voltage
rejection ratio
VREF = 100 mV to VS – 100 mV,
TA = –40°C to +125°C
A1 devices
–0.04%
±0.2%
A2, A3, A4
devices
–0.06%
±0.3%
A5 devices
–0.08%
±0.4%
2
7
ppm/°C
±0.01%
A1 devices
±2
±10
A2 devices
±1
±6
A3 devices
±0.5
±4
±0.25
±3
A4, A5
devices
Maximum capacitive
load
V/V
No sustained oscillation
1
µV/V
nF
VOLTAGE OUTPUT
VSP
Swing to VS powersupply rail
VS = 1.8 V, RL = 10 kΩ to GND, TA = –40°C to +125°C
(VS) – 20
(VS) – 40
mV
VSN
Swing to GND
VS = 1.8 V, RL = 10 kΩ to GND, TA = –40°C to +125°C,
VSENSE = –10 mV, VREF = 0 V
(VGND) + 0.05
(VGND) + 1
mV
VS = 1.8 V, RL = 10 kΩ to GND,
TA = –40°C to +125°C, VSENSE = 0 mV,
VREF = 0 V
A1, A2, A3
devices
(VGND) + 1
(VGND) + 3
mV
VZL
Zero current output
voltage
A4 devices
(VGND) + 2
(VGND) + 4
mV
A5 devices
(VGND) + 3
(VGND) + 9
mV
FREQUENCY RESPONSE
BW
Bandwidth
A1 devices, CLOAD = 10 pF
45
A2 devices, CLOAD = 10 pF
37
A3 devices, CLOAD = 10 pF
35
A4 devices, CLOAD = 10 pF
33
kHz
A5 devices, CLOAD = 10 pF
27
SR
Slew rate
VS = 5.0 V, VOUT = 0.5 V to 4.5 V
0.3
V/µs
tS
Settling time
From current step to within 1% of final value
30
µs
(1)
RTI = referred-to-input.
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Electrical Characteristics (continued)
at TA = 25°C, VSENSE = VIN+ – VIN–, VS = 1.8 V to 5.0 V, VIN+ = 12 V, VREF = VS / 2, and VENABLE = VS (unless otherwise noted)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
NOISE, RTI (1)
Voltage noise density
75
nV/√Hz
ENABLE
IEN
Leakage input current 0 V ≤ VENABLE ≤ VS
VIH
High-level input
voltage
VIL
Low-level input
voltage
VHYS
Hysteresis
IODIS
Output leakage
disabled
1
100
nA
0.7 × VS
6
V
0
0.3 × VS
V
300
VS = 5.0 V, VOUT = 0 V to 5.0 V, VENABLE = 0 V
mV
1
5
µA
48
65
µA
90
µA
100
nA
POWER SUPPLY
IQ
Quiescent current
IQDIS
Quiescent current
disabled
6
VS = 1.8 V, VSENSE = 0 mV
VS = 1.8 V, VSENSE = 0 mV, TA = –40°C to +125°C
VENABLE = 0 V, VSENSE = 0 mV
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SBOS863D – MARCH 2018 – REVISED NOVEMBER 2019
6.6 Typical Characteristics
at TA = 25°C, VS = 1.8 V, VIN+ = 12 V, VREF = VS / 2, VENABLE = VS, and for all gain options (unless otherwise noted)
15
Population
Offset Voltage (PV)
10
5
0
-5
-15
-50
15
Input Offset Voltage (PV)
12
9
6
3
0
-3
-6
-9
-12
-15
-10
-25
0
D001
Figure 1. Input Offset Voltage Production Distribution
25
50
75
Temperature (qC)
100
125
150
D006
Figure 2. Offset Voltage vs Temperature
-0.1
-0.09
-0.08
-0.07
-0.06
-0.05
-0.04
-0.03
-0.02
-0.01
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.1
Population
Common-Mode Rejection Ratio (PV/V)
0.1
D007
0.08
0.06
0.04
0.02
0
-0.02
-0.04
-0.06
-0.08
-0.1
-50
Common-Mode Rejection Ratio (PV/V)
0
25
50
75
Temperature (qC)
100
125
150
D012
Figure 4. Common-Mode Rejection Ratio vs Temperature
Figure 3. Common-Mode Rejection Production Distribution
D013
Gain Error (%)
-0.3
-0.27
-0.24
-0.21
-0.18
-0.15
-0.12
-0.09
-0.06
-0.03
0
0.03
0.06
0.09
0.12
0.15
0.18
0.21
0.24
0.27
0.3
-0.2
-0.18
-0.16
-0.14
-0.12
-0.1
-0.08
-0.06
-0.04
-0.02
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
Population
Population
-25
Gain Error (%)
A1 devices
D014
A2, A3, and A4 devices
Figure 5. Gain Error Production Distribution
Figure 6. Gain Error Production Distribution
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Typical Characteristics (continued)
at TA = 25°C, VS = 1.8 V, VIN+ = 12 V, VREF = VS / 2, VENABLE = VS, and for all gain options (unless otherwise noted)
0.2
0.16
0.12
Population
Gain Error (%)
0.08
0.04
0
-0.04
-0.08
-0.12
-0.16
-0.4
-0.36
-0.32
-0.28
-0.24
-0.2
-0.16
-0.12
-0.08
-0.04
0
0.04
0.08
0.12
0.16
0.2
0.24
0.28
0.32
0.36
0.4
-0.2
-50
-25
0
25
50
75
Temperature (qC)
D017
100
125
150
D018
Gain Error (%)
A5 devices
Figure 7. Gain Error Production Distribution
Figure 8. Gain Error vs Temperature
60
Power-Supply Rejection Ratio (dB)
140
50
Gain (dB)
40
30
20
10
0
-10
-20
10
A1
A2
A3
A4
A5
100
1k
10k
Frequency (Hz)
100k
120
100
80
60
40
20
0
10
1M
100
1k
10k
Frequency (Hz)
D019
VS = 5 V
Vs
140
-40°C
25°C
125°C
Vs-0.4
100
80
Vs-0.8
Y
120
Output Swing (V)
Common-Mode Rejection Ratio (dB)
D020
Figure 10. Power-Supply Rejection Ratio vs Frequency
160
GND+0.8
GND+0.4
60
GND
100
1k
10k
Frequency (Hz)
100k
1M
0
D021
1
2
3
4
5
6
7
Output Current (mA)
8
9
10
11
D010
VS = 1.8 V
A3 devices
Figure 11. Common-Mode Rejection Ratio vs Frequency
8
1M
VS = 5 V
Figure 9. Gain vs Frequency
40
10
100k
Figure 12. Output Voltage Swing vs Output Current
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Typical Characteristics (continued)
at TA = 25°C, VS = 1.8 V, VIN+ = 12 V, VREF = VS / 2, VENABLE = VS, and for all gain options (unless otherwise noted)
Vs
0.25
-40°C
25°C
125°C
0.2
0.15
Input Bias Current (nA)
Vs-1
Y
Output Swing (V)
Vs-2
GND+2
0.1
0.05
0
-0.05
-0.1
-0.15
GND+1
-0.2
GND
0
5
10
15
20
25
Output Current (mA)
30
-0.25
35
0
5
10
D009
VS = 5.0 V
35
40
D024
VS = 5.0 V
Figure 13. Output Voltage Swing vs Output Current
Figure 14. Input Bias Current vs Common-Mode Voltage
0.25
7
0.2
6
Input Bias Current (nA)
0.15
Input Bias Current (nA)
15
20
25
30
Common-Mode Voltage (V)
0.1
0.05
0
-0.05
-0.1
5
4
3
2
1
-0.15
0
-0.2
-1
-50
-0.25
0
5
10
15
20
25
30
Common-Mode Voltage (V)
35
40
-25
0
D025
25
50
75
Temperature (qC)
100
125
150
D026
VENABLE = 0 V
Figure 16. Input Bias Current vs Temperature
Figure 15. Input Bias Current vs Common-Mode Voltage
(Shutdown)
240
80
70
210
Quiescent Current (nA)
Quiescent Current (PA)
75
VS = 1.8 V
VS = 3.3 V
VS = 5 V
65
60
55
50
180
150
120
90
60
45
30
40
0
35
-50
-25
0
25
50
75
Temperature (qC)
100
125
150
-30
-50
D027
Figure 17. Quiescent Current vs Temperature (Enabled)
VS = 1.8 V
VS = 3.3 V
VS = 5.0 V
-25
0
25
50
75
Temperature (qC)
100
125
150
D002
VENABLE = 0 V
Figure 18. Quiescent Current vs Temperature (Disabled)
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Typical Characteristics (continued)
at TA = 25°C, VS = 1.8 V, VIN+ = 12 V, VREF = VS / 2, VENABLE = VS, and for all gain options (unless otherwise noted)
100
70
Quiescent Current (PA)
65
Input-Referred Voltage Noise (nV/—Hz)
VS = 1.8 V
VS = 5 V
60
55
50
45
40
-5
0
5
10
15
20
25
30
Common-Mode Voltage (V)
35
80
70
60
50
40
30
20
10
10
40
100
D029
1k
Frequency (Hz)
10k
100k
D030
A3 devices
VS = 5.0 V
Figure 20. Input-Referred Voltage Noise vs Frequency
Input Voltage
5 mV/div
Referred-to-Input
Voltage Noise (0.5 PV/div)
Output Voltage
500 mV/div
Figure 19. Quiescent Current vs Common Mode Voltage
Time (20 Ps/div)
Time (1 s/div)
D032
D031
A3 devices
VS = 5.0 V, A3 devices
Figure 21. 0.1-Hz to 10-Hz Voltage Noise (Referred-To-Input)
Figure 22. Step Response (10-mVPP Input Step)
Inverting Input
Output
Voltage (2 V/div)
VOUT (100mV/div)
Common-Mode Voltage (10 V/div)
VCM
VOUT
0V
Time (250 Ps/div)
Time (250 Ps/div)
D033
D034
A3 devices
A3 devices
Figure 23. Common-Mode Voltage Transient Response
10
Figure 24. Inverting Differential Input Overload
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Typical Characteristics (continued)
at TA = 25°C, VS = 1.8 V, VIN+ = 12 V, VREF = VS / 2, VENABLE = VS, and for all gain options (unless otherwise noted)
Non-inverting Input
Output
Voltage (2 V/div)
Voltage (1V/div)
Supply Voltage
Output Voltage
0V
0V
Time (10 Ps/div)
Time (250 Ps/div)
D036
D035
VS = 5.0 V, A3 devices
VS = 5.0 V, A3 devices
Figure 25. Noninverting Differential Input Overload
Figure 26. Start-Up Response
Enable
Output
Voltage (1 V/div)
Voltage (1 V/div)
Supply Voltage
Output Voltage
0V
0V
Time (100 Ps/div)
Time (250 Ps/div)
D037
D038
VS = 5.0 V, A3 devices
VS = 5.0 V, A3 devices
Figure 28. Enable and Disable Response
Figure 27. Brownout Recovery
100
25
IBP
IBN
80
IBP
IBN
15
Input Bias Current (nA)
Input Bias Current (nA)
60
40
20
0
-20
-40
-60
5
-5
-15
-80
-100
-110 -90
-70
-50 -30 -10 10 30 50
Differential Input Voltage (mV)
70
90
110
-25
-60
D039
VS = 5.0 V, VREF = 2.5 V, A1 devices
-40
-20
0
20
Differential Input Voltage (mV)
40
60
D047
VS = 5.0 V, VREF = 2.5 V, A2, A3, A4, A5 devices
Figure 29. IB+ and IB– vs Differential Input Voltage
Figure 30. IB+ and IB– vs Differential Input Voltage
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Typical Characteristics (continued)
at TA = 25°C, VS = 1.8 V, VIN+ = 12 V, VREF = VS / 2, VENABLE = VS, and for all gain options (unless otherwise noted)
3
1.25
-40qC
25qC
125qC
0.75
Output Leakage Current (PA)
Output Leakage Current (PA)
1
0.5
0.25
0
-0.25
-0.5
2
1.5
1
0.5
0
-0.5
-1
-1.5
-0.75
-2
-1
-2.5
0
0.5
1
25qC
-40qC
125qC
2.5
1.5
2
2.5
3
3.5
Output Voltage (V)
4
4.5
5
0
0.5
1
1.5
D040
VS = 5.0 V, VENABLE = 0 V, VREF = 2.5 V
2
2.5
3
3.5
Output Voltage (V)
4
4.5
5
D048
VS = 5.0 V, VENABLE = 0 V, VREF = 2.5 V
Figure 31. Output Leakage vs Output Voltage
(A1, A2, and A3 Devices)
Figure 32. Output Leakage vs Output Voltage
(A4 and A5 Devices)
5000
A5
Output Impedance (:)
1000
A4
A1
100
A2
A3
10
Gain Variants
A1
A2
A3
A4
A5
1
0.1
10
100
1k
10k
100k
Frequency (Hz)
1M
10M
D050
VS = 5.0 V, VCM = 0 V
Figure 33. Output Impedance vs Frequency
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7 Detailed Description
7.1 Overview
The INA190 is a low bias current, low offset, 40-V common-mode, current-sensing amplifier. The DDF SOT-23
and RSW UQFN packages also feature an enable pin. The INA190 is a specially designed, current-sensing
amplifier that accurately measures voltages developed across current-sensing resistors on common-mode
voltages that far exceed the supply voltage. Current is measured on input voltage rails as high as 40 V at VIN+
and VIN–, with a supply voltage, VS, as low as 1.7 V. When disabled, the output goes to a high-impedance state,
and the supply current draw is reduced to less than 0.1 µA. The INA190 is intended for use in both low-side and
high-side current-sensing configurations where high accuracy and low current consumption are required.
7.2 Functional Block Diagram
ENABLE(1)
VS
INA190
IN+
+
±
±
OUT
±
+
+
IN±
REF
GND
(1)
The ENABLE pin is available only in the DDF and RSW packages.
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7.3 Feature Description
7.3.1 Precision Current Measurement
The INA190 allows for accurate current measurements over a wide dynamic range. The high accuracy of the
device is attributable to the low gain error and offset specifications. The offset voltage of the INA190 is less than
15 µV. In this case, the low offset improves the accuracy at light loads when VIN+ approaches VIN–. Another
advantage of low offset is the ability to use a lower-value shunt resistor that reduces the power loss in the
current-sense circuit, and improves the power efficiency of the end application.
The maximum gain error of the INA190 is specified between 0.2% and 0.4% of the actual value, depending on
the gain option. As the sensed voltage becomes much larger than the offset voltage, the gain error becomes the
dominant source of error in the current-sense measurement. When the device monitors currents near the fullscale output range, the total measurement error approaches the value of the gain error.
7.3.2 Low Input Bias Current
The INA190 is different from many current-sense amplifiers because this device offers very low input bias
current. The low input bias current of the INA190 has three primary benefits.
The first benefit is the reduction of the current consumed by the device in both the enabled and disabled states.
Classical current-sense amplifier topologies typically consume tens of microamps of current at the inputs. For
these amplifiers, the input current is the result of the resistor network that sets the gain and additional current to
bias the input amplifier. To reduce the bias current to near zero, the INA190 uses a capacitively coupled amplifier
on the input stage, followed by a difference amplifier on the output stage.
The second benefit of low bias current is the ability to use input filters to reject high-frequency noise before the
signal is amplified. In a traditional current-sense amplifier, the addition of input filters comes at the cost of
reduced accuracy. However, as a result of the low bias currents, input filters have little effect on the
measurement accuracy of the INA190.
The third benefit of low bias current is the ability to use a larger current-sense resistor. This ability allows the
device to accurately monitor currents as low as 1 µA.
7.3.3 Low Quiescent Current With Output Enable
The device features low quiescent current (IQ), while still providing sufficient small-signal bandwidth to be usable
in most applications. The quiescent current of the INA190 is only 48 µA (typ), while providing a small-signal
bandwidth of 35 kHz in a gain of 100. The low IQ and good bandwidth allow the device to be used in many
portable electronic systems without excessive drain on the battery. Because many applications only need to
periodically monitor current, the INA190 features an enable pin that turns off the device until needed. When in
the disabled state, the INA190 typically draws 10 nA of total supply current.
7.3.4 Bidirectional Current Monitoring
INA190 devices can sense current flow through a sense resistor in both directions. The bidirectional currentsensing capability is achieved by applying a voltage at the REF pin to offset the output voltage. A positive
differential voltage sensed at the inputs results in an output voltage that is greater than the applied reference
voltage. Likewise, a negative differential voltage at the inputs results in output voltage that is less than the
applied reference voltage. The output voltage of the current-sense amplifier is shown in Equation 1.
VOUT
I LOAD u RSENSE u GAIN
VREF
where
•
•
•
•
14
ILOAD is the load current to be monitored.
RSENSE is the current-sense resistor.
GAIN is the gain option of the selected device.
VREF is the voltage applied to the REF pin.
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Feature Description (continued)
7.3.5 High-Side and Low-Side Current Sensing
The INA190 supports input common-mode voltages from –0.2 V to +40 V. Because of the internal topology, the
common-mode range is not restricted by the power-supply voltage (VS). The ability to operate with commonmode voltages greater or less than VS allows the INA190 to be used in high-side and low-side current-sensing
applications, as shown in Figure 34.
Bus Suppl y
up to +40 V
IN+
High-Side Se nsing
Commo n-mode volta ge (VCM )
is b us-voltage depen dent.
R SENS E
IN±
LOA D
IN+
R SENS E
Low-Side Se nsing
Commo n-mode volta ge (VCM )
is a lwa ys n ear groun d a nd is
isolated fro m bus-voltage sp ikes.
IN±
Figure 34. High-Side and Low-Side Sensing Connections
7.3.6 High Common-Mode Rejection
The INA190 uses a capacitively coupled amplifier on the front end. Therefore, dc common-mode voltages are
blocked from downstream circuits, resulting in very high common-mode rejection. Typically, the common-mode
rejection of the INA190 is approximately 150 dB. The ability to reject changes in the dc common-mode voltage
allows the INA190 to monitor both high- and low-voltage rail currents with very little change in the offset voltage.
7.3.7 Rail-to-Rail Output Swing
The INA190 allows linear current-sensing operation with the output close to the supply rail and ground. The
maximum specified output swing to the positive rail is VS – 40 mV, and the maximum specified output swing to
GND is only GND + 1 mV. The close-to-rail output swing is useful to maximize the usable output range,
particularly when operating the device from a 1.8-V supply.
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7.4 Device Functional Modes
7.4.1 Normal Operation
The INA190 is in normal operation when the following conditions are met:
• The power-supply voltage (VS) is between 1.7 V and 5.5 V.
• The common-mode voltage (VCM) is within the specified range of –0.2 V to +40 V.
• The maximum differential input signal times the gain plus VREF is less than the positive swing voltage VSP.
• The ENABLE pin is driven or connected to VS.
• The minimum differential input signal times the gain plus VREF is greater than the zero load swing to GND, VZL
(see the Rail-to-Rail Output Swing section).
During normal operation, this device produces an output voltage that is the amplified representation of the
difference voltage from IN+ to IN– plus the voltage applied to the REF pin.
7.4.2 Unidirectional Mode
This device can be configured to monitor current flowing in one direction (unidirectional) or in both directions
(bidirectional) depending on how the REF pin is connected. The most common case is unidirectional where the
output is set to ground when no current is flowing by connecting the REF pin to ground, as shown in Figure 35.
When the current flows from the bus supply to the load, the input voltage from IN+ to IN– increases and causes
the output voltage at the OUT pin to increase.
Bus Voltage
up to 40 V
RSENS E
VS
1.7 V to 5.5 V
Loa d
CBYPASS
0.1 µF
ISENS E
ENABL E
VS
INA190
IN±
Capacitive ly
Couple d
Amplifier
±
OUT
VOUT
+
REF
IN+
GND
Figure 35. Typical Unidirectional Application
The linear range of the output stage is limited by how close the output voltage can approach ground under zero
input conditions. The zero current output voltage of the INA190 is very small and for most unidirectional
applications the REF pin is simply grounded. However, if the measured current multiplied by the current sense
resistor and device gain is less than the zero current output voltage then bias the REF pin to a convenient value
above the zero current output voltage to get the output into the linear range of the device. To limit common-mode
rejection errors, buffer the reference voltage connected to the REF pin.
A less-frequently used output biasing method is to connect the REF pin to the power-supply voltage, VS. This
method results in the output voltage saturating at 40 mV less than the supply voltage when no differential input
voltage is present. This method is similar to the output saturated low condition with no differential input voltage
when the REF pin is connected to ground. The output voltage in this configuration only responds to currents that
develop negative differential input voltage relative to the device IN– pin. Under these conditions, when the
negative differential input signal increases, the output voltage moves downward from the saturated supply
voltage. The voltage applied to the REF pin must not exceed VS.
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Device Functional Modes (continued)
Another use for the REF pin in unidirectional operation is to level shift the output voltage. Figure 36 shows an
application where the device ground is set to a negative voltage so currents biased to negative supplies, as seen
in optical networking cards, can be measured. The GND of the INA190 can be set to negative voltages, as long
as the inputs do not violate the common-mode range specification and the voltage difference between VS and
GND does not exceed 5.5 V. In this example, the output of the INA190 is fed into a positive-biased ADC. By
grounding the REF pin, the voltages at the output will be positive and not damage the ADC. To make sure the
output voltage never goes negative, the supply sequencing must be the positive supply first, followed by the
negative supply.
+ 1.8 V
-3.3 V
CBYPASS
0.1 µF
RSENS E
Loa d
ENABL E
VS
INA190
IN-
Capacitive ly
Couple d
Amplifier
±
OUT
ADC
+
REF
IN+
GND
- 3.3 V
Figure 36. Using the REF Pin to Level-Shift Output Voltage
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Device Functional Modes (continued)
7.4.3 Bidirectional Mode
The INA190 devices are bidirectional current-sense amplifiers capable of measuring currents through a resistive
shunt in two directions. This bidirectional monitoring is common in applications that include charging and
discharging operations where the current flowing through the resistor can change directions.
Bus Voltage
up to 40 V
RSENS E
VS
1.7 V to 5.5 V
Loa d
CBYPASS
0.1 µF
ISENS E
ENABL E
VS
INA190
IN±
Reference
Voltage
Capacitive ly
Couple d
Amplifier
±
OUT
VOUT
+
REF
+
IN+
±
GND
Figure 37. Bidirectional Application
The ability to measure this current flowing in both directions is achieved by applying a voltage to the REF pin, as
shown in Figure 37. The voltage applied to REF (VREF) sets the output state that corresponds to the zero-input
level state. The output then responds by increasing above VREF for positive differential signals (relative to the IN–
pin) and responds by decreasing below VREF for negative differential signals. This reference voltage applied to
the REF pin can be set anywhere between 0 V to VS. For bidirectional applications, VREF is typically set at VS/2
for equal signal range in both current directions. In some cases, VREF is set at a voltage other than VS/2; for
example, when the bidirectional current and corresponding output signal do not need to be symmetrical.
7.4.4 Input Differential Overload
If the differential input voltage (VIN+ – VIN–) times gain exceeds the voltage swing specification, the INA190 drives
its output as close as possible to the positive supply or ground, and does not provide accurate measurement of
the differential input voltage. If this input overload occurs during normal circuit operation, then reduce the value of
the shunt resistor or use a lower-gain version with the chosen sense resistor to avoid this mode of operation. If a
differential overload occurs in a time-limited fault event, then the output of the INA190 returns to the expected
value approximately 80 µs after the fault condition is removed.
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Device Functional Modes (continued)
7.4.5 Shutdown
The INA190 features an active-high ENABLE pin that shuts down the device when pulled to ground. When the
device is shut down, the quiescent current is reduced to 10 nA (typ), and the output goes to a high-impedance
state. In a battery-powered application, the low quiescent current extends the battery lifetime when the current
measurement is not needed. When the ENABLE pin is driven to the supply voltage, the device turns back on.
The typical output settling time when enabled is 130 µs.
The output of the INA190 goes to a high-impedance state when disabled. Therefore, you can connect multiple
outputs of the INA190 together to a single ADC or measurement device, as shown in Figure 38.
When connected in this way, enable only one INA190 at a time, and make sure all devices have the same supply
voltage.
Bus Voltage1
upto to +40 V
RSENS E
Sup ply Vo ltag e
1.7 V to 5.5 V
LOA D
0.1 F
ENABL E
GPIO1
VS
IN±
INA190
ADC
OUT
Microco ntr oller
IN+
GPIO2
REF
GND
Bus Voltage2
upto to +40 V
RSENS E
Sup ply Vo ltag e
1.7 V to 5.5 V
LOA D
0.1 F
ENABL E
VS
IN±
INA190
OUT
IN+
GND
REF
Figure 38. Multiplexing Multiple Devices With the ENABLE Pin
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The INA190 amplifies the voltage developed across a current-sensing resistor as current flows through the
resistor to the load or ground. The high common-mode rejection of the INA190 make it usable over a wide range
of voltage rails while still maintaining an accurate current measurement.
8.1.1 Basic Connections
Figure 39 shows the basic connections of the INA190. Place the device as close as possible to the current sense
resistor and connect the input pins (IN+ and IN–) to the current sense resistor through kelvin connections.If
present, the ENABLE pin must be controlled externally or connected to VS if not used.
Supply Voltage
1.7 V to 5.5 V
RSENSE
Bus Voltage
±0.2 V to +40 V
LOAD
0.5 nA
(typ)
0.1 …F
0.5 nA
(typ)
ENABLE(1)
VS
IN±
INA190
OUT
ADC
Microcontroller
IN+
GND
(1)
REF
The ENABLE pin is available only in the DDF and RSW packages.
NOTE: To help eliminate ground offset errors between the device and the analog-to-digital converter (ADC), connect
the REF pin to the ADC reference input. When driving SAR ADCs, filter or buffer the output of the INA190 before
connecting directly to the ADC.
Figure 39. Basic Connections for the INA190
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Application Information (continued)
8.1.2 RSENSE and Device Gain Selection
The accuracy of any current-sense amplifier is maximized by choosing the current-sense resistor to be as large
as possible. A large sense resistor maximizes the differential input signal for a given amount of current flow and
reduces the error contribution of the offset voltage. However, there are practical limits as to how large the
current-sense resistor can be in a given application because of the resistor size and maximum allowable power
dissipation. Equation 2 gives the maximum value for the current-sense resistor for a given power dissipation
budget:
PDMAX
RSENSE
IMAX2
where:
•
•
PDMAX is the maximum allowable power dissipation in RSENSE.
IMAX is the maximum current that will flow through RSENSE.
(2)
An additional limitation on the size of the current-sense resistor and device gain is due to the power-supply
voltage, VS, and device swing-to-rail limitations. In order to make sure that the current-sense signal is properly
passed to the output, both positive and negative output swing limitations must be examined. Equation 3 provides
the maximum values of RSENSE and GAIN to keep the device from exceeding the positive swing limitation.
IMAX u RSENSE u GAIN < VSP VREF
where:
•
•
•
•
IMAX is the maximum current that will flow through RSENSE.
GAIN is the gain of the current-sense amplifier.
VSP is the positive output swing as specified in the data sheet.
VREF is the externally applied voltage on the REF pin.
(3)
To avoid positive output swing limitations when selecting the value of RSENSE, there is always a trade-off between
the value of the sense resistor and the gain of the device under consideration. If the sense resistor selected for
the maximum power dissipation is too large, then it is possible to select a lower-gain device in order to avoid
positive swing limitations.
The negative swing limitation places a limit on how small the sense resistor value can be for a given application.
Equation 4 provides the limit on the minimum value of the sense resistor.
IMIN u RSENSE u GAIN > VSN VREF
where:
•
•
•
•
IMIN is the minimum current that will flow through RSENSE.
GAIN is the gain of the current-sense amplifier.
VSN is the negative output swing of the device (see Rail-to-Rail Output Swing).
VREF is the externally applied voltage on the REF pin.
(4)
In addition to adjusting RSENSE and the device gain, the voltage applied to the REF pin can be slightly increased
above GND to avoid negative swing limitations.
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Application Information (continued)
8.1.3 Signal Conditioning
When performing accurate current measurements in noisy environments, the current-sensing signal is often
filtered. The INA190 features low input bias currents. Therefore, adding a differential mode filter to the input
without sacrificing the current-sense accuracy is possible. Filtering at the input is advantageous because this
action attenuates differential noise before the signal is amplified. Figure 40 provides an example of how to use a
filter on the input pins of the device.
Bus Voltage
up to 40 V
VS
1.7 V to 5.5 V
RSENSE
Load
f3dB
1
4SRFCF
CF
VS
ENABLE
Capacitively Coupled
Amplifier
IN±
RF
INA190
±
RDIFF
CBYPASS
0.1 µF
OUT
VOUT
+
RF
REF
IN+
GND
Figure 40. Filter at the Input Pins
The differential input impedance (RDIFF) shown in Figure 40 limits the maximum value for RF. The value of RDIFF
is a function of the device temperature, as shown in Figure 41.
6
A1
A2, A3, A4, A5
Input Impedance (M:)
5
4
3
2
1
-50
-25
0
25
50
75
Temperature (qC)
100
125
150
D115
Figure 41. Differential Input Impedance vs Temperature
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Application Information (continued)
As the voltage drop across the sense resistor (VSENSE) increases, the amount of voltage dropped across the input
filter resistors (RF) also increases. The increased voltage drop results in additional gain error. The error caused
by these resistors is calculated by the resistor divider equation shown in Equation 5.
Error(%)
§
RDIFF
¨1
¨ RSENSE RDIFF
©
2 u RF
·
¸ u 100
¸
¹
where:
•
•
RDIFF is the differential input impedance.
RF is the added value of the series filter resistance.
(5)
The input stage of the INA190 uses a capacitive feedback amplifier topology in order to achieve high dc
precision. As a result, periodic high-frequency shunt voltage (or current) transients of significant amplitude (10
mV or greater) and duration (hundreds of nanoseconds or greater) may be amplified by the INA190, even though
the transients are greater than the device bandwidth. Use a differential input filter in these applications to
minimize disturbances at the INA190 output.
The high input impedance and low bias current of the INA190 provide flexibility in the input filter design without
impacting the accuracy of current measurement. For example, set RF = 100 Ω and CF = 22 nF to achieve a lowpass filter corner frequency of 36.2 kHz. These filter values significantly attenuate most unwanted high-frequency
signals at the input without severely impacting the current sensing bandwidth or precision. If a lower corner
frequency is desired, increase the value of CF.
Filtering the input filters out differential noise across the sense resistor. If high-frequency, common-mode noise is
a concern, add an RC filter from the OUT pin to ground. The RC filter helps filter out both differential and
common mode noise, as well as, internally generated noise from the device. The value for the resistance of the
RC filter is limited by the impedance of the load. Any current drawn by the load manifests as an external voltage
drop from the INA190 OUT pin to the load input. To select the optimal values for the output filter, use Figure 33
and see the Closed-Loop Analysis of Load-Induced Amplifier Stability Issues Using ZOUT application report
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Application Information (continued)
8.1.4 Common-Mode Voltage Transients
With a small amount of additional circuitry, the INA190 can be used in circuits subject to transients that exceed
the absolute maximum voltage ratings. The most simple way to protect the inputs from negative transients is to
add resistors in series to the IN– and IN+ pins. Use resistors that are 1 kΩ or less, and limit the current in the
ESD structures to less than 5 mA. For example, using 1-kΩ resistors in series with the INA190 allows voltages
as low as –5 V, while limiting the ESD current to less than 5 mA. If protection from high-voltage or morenegative, common-voltage transients is needed, use the circuits shown in Figure 42 and Figure 43. When
implementing these circuits, use only Zener diodes or Zener-type transient absorbers (sometimes referred to as
transzorbs); any other type of transient absorber has an unacceptable time delay. Start by adding a pair of
resistors as a working impedance for the Zener diode, as shown in Figure 42. Keep these resistors as small as
possible; most often, use around 100 Ω. Larger values can be used with an effect on gain that is discussed in the
Signal Conditioning section. This circuit limits only short-term transients; therefore, many applications are
satisfied with a 100-Ω resistor along with conventional Zener diodes of the lowest acceptable power rating. This
combination uses the least amount of board space. These diodes can be found in packages as small as SOT523 or SOD-523.
Bus Voltage
up to 40 V
VS
1.7 V to 5.5 V
RSENS E
Loa d
ENABL E
VS
CBYPASS
0.1 µF
INA190
IN±
< 1 k:
Capacitive ly
Couple d
Amplifier
±
OUT
VOUT
+
RPROTECT
REF
IN+
< 1 k:
GND
Figure 42. Transient Protection Using Dual Zener Diodes
In the event that low-power Zener diodes do not have sufficient transient absorption capability, a higher-power
transzorb must be used. The most package-efficient solution involves using a single transzorb and back-to-back
diodes between the device inputs, as shown in Figure 43. The most space-efficient solutions are dual, seriesconnected diodes in a single SOT-523 or SOD-523 package. In either of the examples shown in Figure 42 and
Figure 43, the total board area required by the INA190 with all protective components is less than that of an SO8 package, and only slightly greater than that of an VSSOP-8 package.
Bus Voltage
up to 40 V
VS
1.7 V to 5.5 V
R SENS E
Loa d
ENABL E
VS
CBYPASS
0.1 µF
INA190
IN±
< 1 k:
Capacitive ly
Couple d
Amplifier
Transorb
±
OUT
VOUT
+
RPROTECT
REF
IN+
< 1 k:
GND
Figure 43. Transient Protection Using a Single Transzorb and Input Clamps
For more information, see the Current Shunt Monitor With Transient Robustness reference design.
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8.2 Typical Applications
The low input bias current of the INA190 allows accurate monitoring of small-value currents. To accurately
monitor currents in the microamp range, increase the value of the sense resistor to increase the sense voltage
so that the error introduced by the offset voltage is small. The circuit configuration for monitoring low-value
currents is shown in Figure 44. As a result of the differential input impedance of the INA190, limit the value of
RSENSE to 1 kΩ or less for best accuracy.
RSENSE ” 1 kO
12 V
LOAD
5V
0.1 F
ENABLE
VS
IN±
OUT
INA190
IN+
REF
GND
Figure 44. Microamp Current Measurement
8.2.1 Design Requirements
The design requirements for the circuit shown in Figure 44 are listed in Table 1.
Table 1. Design Parameters
DESIGN PARAMETER
EXAMPLE VALUE
Power-supply voltage (VS)
5V
Bus supply rail (VCM)
12 V
Minimum sense current (IMIN)
1 µA
Maximum sense current (IMAX)
150 µA
Device gain (GAIN)
25 V/V
Reference voltage (VREF)
0V
Amplifier current in sleep or disabled state
< 1 µA
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8.2.2 Detailed Design Procedure
The maximum value of the current-sense resistor is calculated based choice of gain, value of the maximum
current the be sensed (IMAX), and the power supply voltage(VS). When operating at the maximum current, the
output voltage must not exceed the positive output swing specification, VSP. Using Equation 6, for the given
design parameters the maximum value for RSENSE is calculated to be 1.321 kΩ.
VSP
RSENSE <
IMAX u GAIN
(6)
However, because this value exceeds the maximum recommended value for RSENSE, a resistance value of 1 kΩ
must be used. When operating at the minimum current value, IMIN the output voltage must be greater than the
swing to GND (VSN), specification. For this example, the output voltage at the minimum current is calculated
using Equation 7 to be 25 mV, which is greater than the value for VSN.
VOUTMIN IMIN u RSENSE u GAIN
(7)
8.2.3 Application Curve
Figure 45 shows the output of the device when disabled and enabled while measuring a 40-µA load current.
When disabled, the current draw from the device supply and inputs is less than 106 nA.
Voltage (1 V/div)
Enable
Output
0V
Time (250 Ps/div)
D030
Figure 45. Output Disable and Enable Response
9 Power Supply Recommendations
The input circuitry of the INA190 accurately measures beyond the power-supply voltage, VS. For example, VS
can be 5 V, whereas the bus supply voltage at IN+ and IN– can be as high as 40 V. However, the output voltage
range of the OUT pin is limited by the voltage on the VS pin. The INA190 also withstands the full differential input
signal range up to 40 V at the IN+ and IN– input pins, regardless of whether the device has power applied at the
VS pin. There is no sequencing requirement for VS and VIN+ or VIN–.
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10 Layout
10.1 Layout Guidelines
•
•
•
Connect the input pins to the sensing resistor using a Kelvin or 4-wire connection. This connection technique
makes sure that only the current-sensing resistor impedance is detected between the input pins. Poor routing
of the current-sensing resistor commonly results in additional resistance present between the input pins.
Given the very low ohmic value of the current resistor, any additional high-current carrying impedance can
cause significant measurement errors.
Place the power-supply bypass capacitor as close as possible to the device power supply and ground pins.
The recommended value of this bypass capacitor is 0.1 µF. Additional decoupling capacitance can be added
to compensate for noisy or high-impedance power supplies.
When routing the connections from the current-sense resistor to the device, keep the trace lengths as short
as possible. The input filter capacitor CF should be placed as close as possible to the input pins of the device.
10.2 Layout Examples
Current Sense
Output
Connect REF to GND for
Unidirectional Measurement
or to External Reference for
Bidirectional Measurement
VIA to Ground Plane
Supply Voltage
(1.7 V to 5.5 V)
Note: RF and CF are optional in low
noise/ripple environments
REF
1
GND
2
VS
3
INA190
6
OUT
5
IN-
4
IN+
CF
RF
RSHUNT
CBYPASS
RF
VIA to Ground Plane
Figure 46. Recommended Layout for SC70 (DCK) Package
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Layout Examples (continued)
Note: RF and CF are optional in low
noise/ripple environments
CF
RF
CBYPASS
Supply Voltage
(1.7 V to 5.5 V)
VS
1
8
IN-
7
IN+
RSHUNT
ENABLE
Connect to VS
if not used
2
TI Device
REF
3
6
N.C.
GND
4
5
OUT
IN+
RF
VIA to Ground Plane
Connect REF to GND for
Unidirectional Measurement
or to External Reference for
Bidirectional Measurement
Current Sense
Output
Figure 47. Recommended Layout for SOT23-8 (DDF) Package
28
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Layout Examples (continued)
RSHU NT
RF
RF
Note: RF and C F are option al in low
noise/ripp le e nvi ronments
CF
NC
IN-
IN+
5
4
3
CBYPASS
Conne ct to Supp ly
(1.7 V to 5.5 V)
VS
6
2
NC
Conne ct to Co ntr ol o r V S
(Do Not Flo at)
ENABL E
7
1
NC
8
9
10
REF GND OUT
VIA to Gro und
Plan e
Curren t
Sen se Ou tput
Conne ct REF to GND for
Unidire ctional Measuremen t
or to External Reference fo r
Bidi rection al Mea sur ement
Figure 48. Recommended Layout for UQFN (RSW) Package
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11 Device and Documentation Support
11.1 Documentation Support
11.1.1 Related Documentation
For related documentation see the following: Texas Instruments, INA190EVM user's guide
11.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
11.3 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
11.4 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
11.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
INA190A1IDCKR
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
1DP
INA190A1IDCKT
ACTIVE
SC70
DCK
6
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
1DP
INA190A1IDDFR
ACTIVE
SOT-23-THIN
DDF
8
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
1ZGW
INA190A1IDDFT
ACTIVE
SOT-23-THIN
DDF
8
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
1ZGW
INA190A1IRSWR
ACTIVE
UQFN
RSW
10
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
1AN
INA190A1IRSWT
ACTIVE
UQFN
RSW
10
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
1AN
INA190A2IDCKR
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
1DQ
INA190A2IDCKT
ACTIVE
SC70
DCK
6
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
1DQ
INA190A2IDDFR
ACTIVE
SOT-23-THIN
DDF
8
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
1ZHW
INA190A2IDDFT
ACTIVE
SOT-23-THIN
DDF
8
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
1ZHW
INA190A2IRSWR
ACTIVE
UQFN
RSW
10
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
1AM
INA190A2IRSWT
ACTIVE
UQFN
RSW
10
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
1AM
INA190A3IDCKR
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
1DR
INA190A3IDCKT
ACTIVE
SC70
DCK
6
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
1DR
INA190A3IDDFR
ACTIVE
SOT-23-THIN
DDF
8
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
1ZIW
INA190A3IDDFT
ACTIVE
SOT-23-THIN
DDF
8
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
1ZIW
INA190A3IRSWR
ACTIVE
UQFN
RSW
10
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
1AO
INA190A3IRSWT
ACTIVE
UQFN
RSW
10
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
1AO
INA190A4IDCKR
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
1DS
INA190A4IDCKT
ACTIVE
SC70
DCK
6
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
1DS
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
Orderable Device
10-Dec-2020
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
INA190A4IDDFR
ACTIVE
SOT-23-THIN
DDF
8
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
1ZJW
INA190A4IDDFT
ACTIVE
SOT-23-THIN
DDF
8
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
1ZJW
INA190A4IRSWR
ACTIVE
UQFN
RSW
10
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
1AP
INA190A4IRSWT
ACTIVE
UQFN
RSW
10
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
1AP
INA190A5IDCKR
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
1DT
INA190A5IDCKT
ACTIVE
SC70
DCK
6
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
1DT
INA190A5IDDFR
ACTIVE
SOT-23-THIN
DDF
8
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
1ZKW
INA190A5IDDFT
ACTIVE
SOT-23-THIN
DDF
8
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
1ZKW
INA190A5IRSWR
ACTIVE
UQFN
RSW
10
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
1AQ
INA190A5IRSWT
ACTIVE
UQFN
RSW
10
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
1AQ
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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