ISO7421E-Q1
SLLSEA5C – MARCH 2012 – REVISED MARCH 2019
Low-power dual digital isolators
1 Features
3 Description
•
•
The ISO7421E-Q1 provides double galvanic isolation
of up to 2.5 KVrms for 1 minute per UL. This digital
isolator has two isolation channels in a bi-directional
configuration. Each isolation channel has a logic input
and output buffer separated by a silicon oxide (SiO2)
insulation barrier. Used in conjunction with isolated
power supplies, these devices prevent noise currents
on a data bus or other circuits from entering the local
ground and interfering with or damaging sensitive
circuitry.
1
•
•
•
•
•
Qualified for automotive applications
AEC-Q100 Qualified with the following results:
– Device temperature grade 1: -40°C to +125°C
ambient operating temperature range
– Device HBM ESD classification level H3A
– Device CDM ESD classification level C4
Propagation delay less than 20 ns
Low power consumption
Safety and regulatory approvals
– 4242 VPK Isolation per VDE, 2.5 kVrms
isolation per UL 1577, CSA approved per IEC
60950-1 and IEC 61010-1 End Equipment
Standards
50 kV/µs Transient immunity typical
Operates from 3.3 V or 5 V Supply and logic
levels
2 Applications
•
Opto-coupler replacement in:
– Servo control interface
– Motor control
– Power supply
– Battery packs
The devices have TTL input thresholds and require
two supply voltages, 3.3 V or 5 V, or any
combination. All inputs are 5-V tolerant when supplied
from a 3.3-V supply.
Note: The ISO7421E-Q1 is specified for signaling
rates up to 50 Mbps. Due to their fast response time,
under most cases, these devices will also transmit
data with much shorter pulse widths. Designers
should add external filtering to remove spurious
signals with input pulse duration < 20 ns if desired.
Simplified Schematic
VCCI
VCCO
Isolation
Capacitor
INx
OUTx
GNDI
GNDO
(1)
VCCI and GNDI are supply and ground
connections respectively for the input
channels.
(2)
VCCO and GNDO are supply and ground
connections respectively for the output
channels.
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
ISO7421E-Q1
SLLSEA5C – MARCH 2012 – REVISED MARCH 2019
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4 Pin Configuration and Functions
16-Pin SSOP
Top View
ISO7421E-Q1
GND1
NC
VCC1
OUTA
INB
NC
GND1
NC
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
GND2
NC
VCC2
INA
OUTB
NC
NC
GND2
NC = No Internal Connection
Table 1. Pin Functions
PIN
NAME
I/O
ISO7421E-Q1
DESCRIPTION
INA
13
I
Input, channel A
INB
5
–
Input, channel B
GND1
1, 7
–
Ground connection for VCC1
GND2
9, 16
O
Ground connection for VCC2
OUTA
4
O
Output, channel A
OUTB
12
–
Output, channel B
VCC1
14
–
Power supply, VCC1
VCC2
14
-
Power supply, VCC2
NC
2, 6, 8, 10, 11, 15
No Connect Pin
4.1 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
2
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4.1 Device Function Table
INPUT SIDE VCC (VCCI) (1)
OUTPUT SIDE VCC (VCCO) (1)
PU
PU
PD
PU
(1)
INPUT (IN) (1)
OUTPUT (OUT) (1)
H
H
L
L
Open
H
X
H
PU = Powered Up (VCC ≥ 3.15V); PD = Powered Down (VCC ≤ 2.4V); X = Irrelevant; H = High Level; L = Low Level
4.2 Available Options
PRODUCT
RATED TA
MARKED AS
ORDERING NUMBER
ISO7421E-Q1
–40°C to 125°C
ISO7421EQ
ISO7421EQDWRQ1
Absolute Maximum Ratings (1)
5
VALUE
MIN
UNIT
MAX
VCC
Supply voltage (2), VCC1, VCC2
–0.5
6
V
VI
Voltage at IN, OUT
–0.5
VCC +
0.5 (3)
V
IO
Output Current
±15
mA
4
kV
1
kV
150
°C
Human Body Model
AEC-Q100 Classification Level H3A
Charged Device Model
AEC-Q100 Classification Level C4
ESD
Electrostatic
discharge
TJ
Maximum junction temperature
(1)
(2)
(3)
All pins
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values except differential I/O bus voltages are with respect to network ground terminal and are peak voltage values.
Maximum voltage must not exceed 6 V. A strongly driven input signal can weakly power the floating VCC via an internal protection diode
and cause undetermined output.
6 Thermal Information
ISO7421E-Q1
THERMAL METRIC (1)
DW (16 Pins)
θJA
Junction-to-ambient thermal resistance
79.9
θJCtop
Junction-to-case (top) thermal resistance
44.6
θJB
Junction-to-board thermal resistance
51.2
ψJT
Junction-to-top characterization parameter
18.0
ψJB
Junction-to-board characterization parameter
42.2
θJCbot
Junction-to-case (bottom) thermal resistance
n/a
PD
Device power dissipation, Vcc1 = Vcc2 = 5.25 V, TJ = 150°C, CL = 15 pF, Input a 0.5
MHz 50% duty cycle square wave
42
(1)
UNITS
°C/W
mW
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report (SPRA953).
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Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
VCC1, VCC2
MIN
TYP
MAX
UNIT
Supply voltage - 3.3V Operation
3.15
3.3
3.45
V
Supply voltage - 5V Operation
4.75
5
5.25
IOH
High-level output current
IOL
Low-level output current
VIH
High-level output voltage
2
VCC
V
VIL
Low-level output voltage
0
0.8
V
TA
Ambient Temperature
-40
125
°C
TJ (1)
Junction temperature
–40
136
°C
1/tui
Signaling rate
0
50
Mbps
tui
Input pulse duration
1
(1)
4
–4
mA
4
mA
µs
To maintain the recommended operating conditions for TJ, see the Package Thermal Characteristics table and the Icc Equations section
of this data sheet
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Electrical Characteristics
VCC1 and VCC2 at 5 V ± 5%, TA = –40°C to 125°C
PARAMETER
VOH
High-level output voltage
VOL
Low-level output voltage
VI(HYS)
Input threshold voltage hysteresis
IIH
High-level input current
IIL
Low-level input current
CMTI
Common-mode transient immunity
TEST CONDITIONS
MIN
TYP
IOH = –4 mA; See Figure 1
VCC –0.8
4.6
IOH = –20 µA; See Figure 1
VCC –0.1
5
MAX
UNIT
V
IOL = 4 mA; See Figure 1
0.2
0.4
IOL = 20 µA; See Figure 1
0
0.1
V
400
mV
10
INx at 0 V or VCC
µA
–10
VI = VCC or 0 V; See Figure 3
25
µA
50
kV/µs
SUPPLY CURRENT (All inputs switching with square wave clock signal for dynamic I CC measurement)
ICC1
DC to 1 Mbps
ICC2
ICC1
DC Input: VI = VCC or 0 V
2.3
3.6
AC Input: CL = 15 pF
2.3
3.6
2.9
4.5
2.9
4.5
4.3
6
10 Mbps
ICC2
Supply current for VCC1 and VCC2
ICC1
25 Mbps
ICC2
ICC1
CL = 15 pF
50 Mbps
ICC2
9
4.3
6
6
9.1
6
9.1
TYP
MAX
mA
Switching Characteristics
VCC1 and VCC2 at 5 V ± 5%, TA = –40°C to 125°C
PARAMETER
TEST CONDITIONS
tPLH, tPHL
Propagation delay time
PWD (1)
Pulse width distortion |tPHL – tPLH|
tsk(pp)
Part-to-part skew time
tsk(o)
Channel-to-channel output skew time
tr
Output signal rise time
tf
Output signal fall time
tfs
Fail-safe output delay time from input power loss
(1)
See Figure 1
See Figure 1
See Figure 2
MIN
UNIT
9
14
ns
0.3
3.7
ns
4.9
ns
3.6
ns
1
ns
1
ns
6
µs
Also known as pulse skew.
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Electrical Characteristics
VCC1 at 5 V ± 5%, VCC2 at 3.3 V ± 5%, TA = –40°C to 105°C
PARAMETER
VOH
High-level output voltage
VOL
Low-level output voltage
VI(HYS)
Input threshold voltage hysteresis
IIH
High-level input current
IIL
Low-level input current
CMTI
Common-mode transient immunity
TEST CONDITIONS
MIN
TYP
5-V side
VCC –0.8
4.6
3.3-V side
VCC –0.4
3
IOH = –20 µA; See Figure 1
VCC –0.1
VCC
IOH = –4 mA;
See Figure 1
MAX
V
IOL = 4 mA; See Figure 1
0.2
0.4
IOL = 20 µA; See Figure 1
0
0.1
400
–10
VI = VCC or 0 V; See Figure 3
25
V
mV
10
INx at 0 V or VCC
UNIT
µA
µA
40
kV/µs
SUPPLY CURRENT (All inputs switching with square wave clock signal for dynamic I CC measurement)
ICC1
DC to 1 Mbps
ICC2
ICC1
DC Input: VI = VCC or 0 V
2.3
3.6
AC Input: CL = 15 pF
1.8
2.8
2.9
4.5
2.2
3.2
4.3
6
2.8
4.1
6
9.1
3.8
5.8
10 Mbps
ICC2
Supply current for VCC1 and VCC2
ICC1
25 Mbps
ICC2
ICC1
CL = 15 pF
50 Mbps
ICC2
11
mA
Switching Characteristics
VCC1 at 5 V ± 5%, VCC2 at 3.3 V ± 5%, TA = –40°C to 125°C
PARAMETER
TEST CONDITIONS
tPLH, tPHL
Propagation delay time
PWD (1)
Pulse width distortion |tPHL – tPLH|
tsk(pp)
Part-to-part skew time
tsk(o)
Channel-to-channel output skew time
tr
Output signal rise time
tf
Output signal fall time
tfs
Fail-safe output delay time from input power loss
(1)
6
See Figure 1
See Figure 1
See Figure 2
MIN
TYP
MAX
10
17
UNIT
ns
0.5
5.6
ns
6.3
ns
4
ns
2
ns
2
ns
6
µs
Also known as pulse skew.
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Electrical Characteristics
VCC1 at 3.3 V ± 5%, VCC2 at 5 V ± 5%, TA = –40°C to 125°C
PARAMETER
VOH
High-level output voltage
VOL
Low-level output voltage
VI(HYS)
Input threshold voltage hysteresis
IIH
High-level input current
IIL
Low-level input current
CMTI
Common-mode transient immunity
TEST CONDITIONS
MIN
TYP
5-V side
VCC –0.8
4.6
3.3-V side
VCC –0.4
3
IOH = –20 µA; See Figure 1
VCC –0.1
VCC
IOH = –4 mA;
See Figure 1
MAX
UNIT
V
IOL = 4 mA; See Figure 1
0.2
0.4
IOL = 20 µA; See Figure 1
0
0.1
V
400
mV
10
INx at 0 V or VCC
µA
–10
VI = VCC or 0 V; See Figure 3
25
µA
40
kV/µs
SUPPLY CURRENT (All inputs switching with square wave clock signal for dynamic I CC measurement)
ICC1
DC to 1 Mbps
ICC2
ICC1
DC Input: VI = VCC or 0 V
1.8
2.8
AC Input: CL = 15 pF
2.3
3.6
2.2
3.2
2.9
4.5
2.8
4.1
4.3
6
3.8
5.8
6
9.1
TYP
MAX
10
17
ns
0.5
4
ns
8.5
ns
4
ns
10 Mbps
ICC2
Supply current for VCC1 and VCC2
ICC1
25 Mbps
ICC2
ICC1
CL = 15 pF
50 Mbps
ICC2
13
mA
Switching Characteristics
VCC1 at 3.3 V ± 5%, VCC2 at 5 V ± 5%, TA = –40°C to 125°C
PARAMETER
TEST CONDITIONS
tPLH, tPHL
Propagation delay time
PWD (1)
Pulse width distortion |tPHL – tPLH|
tsk(pp)
Part-to-part skew time
tsk(o)
Channel-to-channel output skew time
tr
Output signal rise time
tf
Output signal fall time
tfs
Fail-safe output delay time from input power loss
(1)
See Figure 1
See Figure 1
See Figure 2
MIN
UNIT
2
ns
2
ns
6
µs
Also known as pulse skew.
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Electrical Characteristics
VCC1 and VCC2 at 3.3 V ± 5%, TA = –40°C to 125°C
PARAMETER
VOH
High-level output voltage
VOL
Low-level output voltage
VI(HYS)
Input threshold voltage hysteresis
IIH
High-level input current
IIL
Low-level input current
CMTI
Common-mode transient immunity
TEST CONDITIONS
MIN
TYP
IOH = –4 mA; See Figure 1
VCC –0.4
3
IOH = –20 µA; See Figure 1
VCC –0.1
3.3
MAX
UNIT
V
IOL = 4 mA; See Figure 1
0.2
0.4
IOL = 20 µA; See Figure 1
0
0.1
400
V
mV
µA
INx at 0 V or VCC
–10
VI = VCC or 0 V; See Figure 3
25
µA
40
kV/µs
SUPPLY CURRENT (All inputs switching with square wave clock signal for dynamic I CC measurement)
ICC1
DC to 1 Mbps
ICC2
ICC1
DC Input: VI = VCC or 0 V
1.8
2.8
AC Input: CL = 15 pF
1.8
2.8
2.2
3.2
2.2
3.2
2.8
4.1
2.8
4.1
3.8
5.8
3.8
5.8
TYP
MAX
12
20
ns
1
5
ns
6.8
ns
5.5
ns
10 Mbps
ICC2
Supply current for VCC1 and VCC2
ICC1
25 Mbps
ICC2
ICC1
CL = 15 pF
50 Mbps
ICC2
15
mA
Switching Characteristics
VCC1 and VCC2 at 3.3 V ± 5%, TA = –40°C to 125°C
PARAMETER
TEST CONDITIONS
tPLH, tPHL
Propagation delay time
PWD (1)
Pulse width distortion |tPHL – tPLH|
tsk(pp)
Part-to-part skew time
tsk(o)
Channel-to-channel output skew time
tr
Output signal rise time
tf
Output signal fall time
tfs
Fail-safe output delay time from input power loss
(1)
8
See Figure 1
See Figure 1
See Figure 2
MIN
2
UNIT
ns
2
ns
6
µs
Also known as pulse skew.
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Isolation Barrier
16 Parameter Measurement Information
IN
Input
Generator
50 W
VI
(1)
VCCI
VI
OUT
1.4 V
1.4 V
0V
VO
CL
tPLH
(2)
tPHL
90%
10%
50%
VO
50%
VOH
VOL
tr
tf
A.
The input pulse is supplied by a generator having the following characteristics: PRR ≤ 50 kHz, 50% duty cycle, tr ≤
3ns, tf ≤ 3ns, ZO = 50Ω.
B.
CL = 15 pF and includes instrumentation and fixture capacitance within ±20%.
Figure 1. Switching Characteristic Test Circuit and Voltage Waveforms
VI
VCCI
VCCI
A.
Isolation Barrier
IN = 0 V
VI
2.7 V
0V
OUT
tfs
VO
VOH
CL
50%
VO
(1)
Fail-Safe HIGH
VOL
CL = 15 pF and includes instrumentation and fixture capacitance within ±20%.
Figure 2. Failsafe Delay Time Test Circuit and Voltage Waveforms
S1
IN
C = 0.1 μ F ±1%
Isolation Barrier
VCCI
VCCO
C = 0.1 μ F ±1%
Pass-fail criteria –
output must remain
stable.
OUT
+
CL
(1)
GNDI
GNDO
VOH or VOL
–
+ VCM –
A.
CL = 15 pF and includes instrumentation and fixture capacitance within ±20%.
Figure 3. Common-Mode Transient Immunity Test Circuit
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17 Device Information
17.1 Package Characteristics
over recommended operating conditions (unless otherwise noted)
PARAMETER
L(I01)
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Minimum air gap (Clearance)
Shortest terminal to terminal distance through air
7.6
mm
L(I02)
Minimum external tracking (Creepage)
Shortest terminal to terminal distance across the
package surface
7.6
mm
CTI
Tracking resistance (Comparative Tracking
DIN EN 60112 (VDE 0303-11)
Index)
≥400
V
Minimum internal gap (Internal Clearance)
Distance through the insulation
0.014
mm
RIO
Isolation resistance, input to output (1)
Input to output, VIO = 500 V, all pins on each side
of the barrier tied together creating a two-terminal
device
CIO
Barrier capacitance input to output (1)
CI
Input capacitance to ground (2)
(1)
(2)
>1012
Ω
VIO = 0.4 sin(2πft), f = 1 MHz
2
pF
VI = VCC/2 + 0.4 sin(2πft), f = 1 MHz, VCC = 5 V
2
pF
All pins on each side of the barrier tied together creating a two-terminal device.
Measured from input pin to ground.
empty para for space above the NOTE
NOTE
Creepage and clearance requirements should be applied according to the specific
equipment isolation standards of an application. Care should be taken to maintain the
creepage and clearance distance of a board design to ensure that the mounting pads of
the isolator on the printed circuit board do not reduce this distance
Creepage and clearance on a printed circuit board become equal according to the
measurement techniques shown in the Isolation Glossary. Techniques such as inserting
grooves and/or ribs on a printed circuit board are used to help increase these
specifications.
17.2 IEC 60664-1 Ratings Table
PARAMETER
Basic Isolation Group
Installation Classification
10
TEST CONDITIONS
Material Group
SPECIFICATION
II
Rated mains voltages