LF444TDA2

LF444-DIE www.ti.com SLOS855 – MAY 2013 Quad Low Power JFET Input Operational Amplifier Check for Samples: LF444-DIE FEATURES 1 • • • • 2 • • • • ¼ Supply Current of a LM148 Low Input Bias Current High Gain Bandwidth High Slew Rate Low Noise Voltage for Low Power Low Input Noise Current High Input Impedance High Gain DESCRIPTION The LF444-DIE quad low power operational amplifier provides many of the same AC characteristics as the industry standard LM148 while greatly improving the DC characteristics of the LM148. The amplifier has the same bandwidth, slew rate, and gain as the LM148 and only draws one fourth the supply current of the LM148. In addition the well matched high voltage JFET input devices of the LF444 reduce the input bias and offset currents by a factor of 10,000 over the LM148. The LF444 also has a very low equivalent input noise voltage for a low power amplifier. ORDERING INFORMATION (1) (1) (2) PRODUCT PACKAGE DESIGNATOR PACKAGE LF444 TD Bare die in waffle pack (2) ORDERABLE PART NUMBER PACKAGE QUANTITY LF444TDA1 100 LF444TDA2 10 For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI web site at www.ti.com. Processing is per the Texas Instruments commercial production baseline and is in compliance with the Texas Instruments Quality Control System in effect at the time of manufacture. Electrical screening consists of DC parametric and functional testing at room temperature only. Unless otherwise specified by Texas Instruments AC performance and performance over temperature is not warranted. Visual Inspection is performed in accordance with MIL-STD-883 Test Method 2010 Condition B at 75X minimum. 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated LF444-DIE SLOS855 – MAY 2013 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. BARE DIE INFORMATION 2 DIE THICKNESS BACKSIDE FINISH BACKSIDE POTENTIAL BOND PAD METALLIZATION COMPOSITION BOND PAD THICKNESS 10.5 mils. Silicon with backgrind Floating Al (0.5%) Cu 1700 nm Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links: LF444-DIE LF444-DIE www.ti.com SLOS855 – MAY 2013 Table 1. Bond Pad Coordinates in Microns DESCRIPTION PAD NUMBER X MIN Y MIN X MAX Y MAX OUT1 1 -1010.92 773.43 -919.48 864.87 IN1- 2 -1010.92 389.89 -919.48 481.33 IN1+ 3 -1010.92 -384.81 -919.48 -293.37 V+ 4 -1010.92 -991.87 -919.48 -900.43 IN2+ 5 -403.86 -991.87 -312.42 -900.43 IN4+ 6 312.42 938.53 403.86 1029.97 V- 7 919.48 938.53 1010.92 1029.97 IN3+ 8 919.48 331.47 1010.92 422.91 IN3- 9 919.48 -443.23 1010.92 -351.79 OUT3 10 919.48 -826.77 1010.92 -735.33 OUT2 11 754.38 -991.87 845.82 -900.43 IN2- 12 370.84 -991.87 462.28 -900.43 IN4- 13 -462.28 938.53 -370.84 1029.97 OUT4 14 -845.82 938.53 -754.38 1029.97 Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links: LF444-DIE 3 PACKAGE OPTION ADDENDUM www.ti.com 4-Feb-2021 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) (3) Device Marking (4/5) (6) LF444TDA1 ACTIVE 0 100 RoHS & Green Call TI N / A for Pkg Type 0 to 0 LF444TDA2 ACTIVE 0 10 RoHS & Green Call TI N / A for Pkg Type 0 to 0 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of