LM26484
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SNVS573F – SEPTEMBER 2008 – REVISED MARCH 2013
LM26484 Power Management Unit
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FEATURES
APPLICATIONS
•
•
•
•
•
•
•
1
2
•
Step-Down DC/DC Converter (Buck)
– 3.0–5.5V Input Range
– Externally Adjustable VOUT:
– Bucks 1 & 2: 0.8V–3.5V @ 2A
– 180° Phase Shift Between Bucks Clocks
– 2 MHz PWM Switching Frequency
– ±1% feedback Voltage Accuracy
– Automatic Soft Start
– Current Overload Protection
– PWM/PFM efficiency Modes Available
Linear Regulator (LDO) Controller
– 3.0V–5.5V Input Range
– Externally Adjustable VOUT
– ±1.5% Feedback Voltage Accuracy
– Regulated to Low VIN - Low VOUT LI-LO (Low
Input Low Output) NFET Operation
– Input to the LI-LO Configuration, Can Be
Post Regulated When Supply is Regulated
by Buck2
– Up to 1000 mA Output Current by Selection
of External FET
Digital Cores and I/Os (FPGAs, ASICs, DSPs)
Automotive Infotainment
Set-Top-Box
Cordless Phone Base Station
Networking Router
Printers
DESCRIPTION
The LM26484 is a multi-function, configurable Power
Management Unit. This device integrates two highly
efficient 2.0A Step-Down DC/DC converters, one
LDO Controller, a POR (Power On Reset) circuit, and
thermal overload protection circuitry. All regulator
output voltages are externally adjustable. The LDO
controller is a low-voltage NMOS voltage regulator.
The LM26484 is offered in a 5 x 4 x 0.8 mm WQFN24 pin package.
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2008–2013, Texas Instruments Incorporated
LM26484
SNVS573F – SEPTEMBER 2008 – REVISED MARCH 2013
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Typical Application Circuit
Comm DC
Input voltage
19
C9
4
24
L1
2
6
13
ENSW1
ENSW2
Power
On-Off
Logic
ENLDO
RESET
23
C4
R2
C2
20
PGND_SW1
21
BG_vref
Central Bias
Thermal SD
and
Supervisory
C4 and C8 usually not needed
depending on the
application layout and
amount of parasitic on board.
LDOGATE
LDO_OUT
R1
3
FB1
Logic
Control
and
Registers
14
C3
BUCK1
nPOR
PVIN
VOUT1
22
SW1
18
LDO
CONTROLLER
R5
C1
AVIN
R7
C10
Comm DC
Input voltage
1
VIN1
AVDD
Comm DC
Input voltage
7
VIN2
8
C5
C11
15
LDOFB
L2
VOUT2
9
SW2
10
R6
C6
R3
C8
R4
C7
BUCK2
5
FB2
AGND
GND
17
11
PGND_SW2
12
16
Connection Diagram
19
18
17
16
15
14
13
20
12
21
11
DATE CODE *
26484SQ
22
10
23
9
24
8
1
2
3
4
5
6
7
Figure 1. 24-Lead WQFN Package (top view)
Package NHZ0024B
2
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PIN DESCRIPTIONS
Name
I/O
Type (1)
1
VIN1
I
PWR
2
ENSW1
I
D
Enable for Buck1 switcher, a logic HIGH enables Buck1
3
FB1
I
A
Buck1 input feedback terminal
4
AVIN
I
PWR
5
FB2
I
A
Buck2 input feedback terminal
6
ENSW2
I
D
Enable for Buck2 switcher, a logic HIGH enables Buck2
7
VIN2
I
PWR
Power in DC source Buck2 PMOS
8
VIN2
I
PWR
Power in DC source Buck2 PMOS
9
SW2
O
A
Buck2 switcher output
10
SW2
O
A
Buck2 switcher output
11
PGND_SW2
G
G
Buck2 NMOS Power Ground
12
PGND_SW2
G
G
Buck2 NMOS Power Ground
13
ENLDO
I
D
Enable for LDO, a logic HIGH enables LDO
14
LDOGATE
O
A
LDO Controller output to NMOS power transistor Gate
15
LDOFB
I
A
LDO Controller input to feedback terminal
16
AGND
G
G
Analog GND
17
GND
G
G
Ground
18
nPOR
O
D
nPOR Active low Reset output. nPOR remains LOW while the input
supply is below threshold, and goes HIGH after the threshold is
reached and timed delay
Pins
(1)
Description
Power in DC source Buck1 PMOS
Analog power for internal circuits
19
AVDD
I
PWR
20
PGND_SW1
G
G
Buck1 NMOS Power Ground
21
PGND_SW1
G
G
Buck1 NMOS Power Ground
22
SW1
O
A
Buck1 switcher output
23
SW1
O
A
Buck1 switcher output
24
VIN1
I
PWR
Power in DC source Buck1 PMOS
DAP
DAP
GND
GND
Connection isn't necessary for electrical performance, but it is
recommended for better thermal dissipation.
A: Analog Pin
D: Digital Pin
G: Ground Pin
Analog Power Pin
PWR: Power Pin
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Table 1. Default Options
Orderable
Number
Package
Marking
Ordering
Specification
Buck1
Buck2
Supplied As
LM26484SQE
26484SQ
NOPB
PWM
PWM
250 units, tape-and-reel
LM26484SQ
26484SQ
NOPB
PWM
PWM
1000 units, tape-and-reel
LM26484SQX
26484SQ
NOPB
PWM
PWM
4500 units, tape-and-reel
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LM26484
SNVS573F – SEPTEMBER 2008 – REVISED MARCH 2013
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Absolute Maximum Ratings (1) (2) (3)
−0.3V to +6V
VIN1, VIN2, AVDD, AVIN
nPOR, ENSW1, FB1, ENSW2, FB2, ENLDO, LDO_FB
−0.3 to VIN + 0.3V
GND to GND SLUG
±0.3V
Junction Temperature (TJ-MAX)
150°C
−65°C to +150°C
Storage Temperature Range
Maximum Lead Temperature (Soldering)
ESD Ratings
Human Body Model
260°C
(4)
2 kV
Machine Model:
VIN1,2; SW1,2 PGND1,2
All other pins
(1)
(2)
(3)
(4)
150V
200V
Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under
which operation of the device is specified. Operating Ratings do not imply ensured performance limits. For specified performance limits
and associated test conditions, see the Electrical Characteristics tables.
All voltages are with respect to the potential at the GND pin.
If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.
The Human body model is a 100 pF capacitor discharged through a 1.5 kΩ resistor into each pin. The machine model is a 200 pF
capacitor discharged directly into each pin. (MILSTD - 883 3015.7)
Operating Ratings
VIN1, VIN2, AVDD, AVIN
3.0V to 5.5V
nPOR, ENSW1, ENSW2, ENLDO, LDO_GATE, SW1, SW2
FB1, FB2
0v to VBuck1 and VBuck2 respectively
LDOFB
0v to VLDO
Power Dissipation (PD-MAX)
TA = 85°C, TMAX = 125°C
1.2W
Junction Temperature (TJ) Range
(1)
(1)
−40°C to +125°C
Internal thermal shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at TJ = 160°C (typ.) and
disengages at TJ = 130°C (typ.)
Thermal Properties (1)
(2)
Junction-to-Ambient
Thermal Resistance
(θJA)
33.1°C/W based on a
4-layer 1 oz. PCB
Junction-to-Case
Thermal Resistance (θJC)
(1)
(2)
4
0V to VIN + 0.3V
4.3°C/W
In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may
have to be derated. Maximum ambient temperature (TA-MAX) is dependent on the maximum operating junction temperature, the
maximum power dissipation of the device in the application (PD-MAX), and the junction-to-ambient thermal resistance of the package in
the application (θJA), as given by the following equation: TA-MAX = TJ-MAX − (θJA × PD-MAX).Refer to dissipation rating table for PD-MAX
values at different ambient temperatures.
Junction-to-ambient thermal resistance is highly application and board-layout dependent. In applications where high maximum power
dissipation exists, special care must be paid to thermal dissipation issues in board design. More information is available in Application
Note AN-1187 (SNOA401).
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General Electrical Characteristics (1)
Typical values and limits appearing in normal type apply for TJ = 25°C. Limits appearing in boldface type apply over the
entire junction temperature range for operation, −40°C to +125°C. (2) (3)
Symbol
VIN
Parameter
Operational Voltage Range
Conditions
AVDD, AVIN
Typ
Max
Units
3.0
3.3
5.5
V
(4)
TSD
Thermal Shutdown
CIN
Input Capacitor
C9 (Typ App Circuit)
Iq
Quiescent Current “Off”
VIN = 3.3V,
ENSW1, ENSW2, ENLDO = 0
(1)
(2)
(3)
(4)
Min
160
°C
10
µF
0.03
1
µA
Specified by design.Not productoin tested.
All voltages are with respect to the potential at the GND pin.
Min and Max limits are specified by design, test, or statistical analysis. Typical numbers represent the most likely norm.
Internal thermal shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at TJ = 160°C (typ.) and
disengages at TJ = 130°C (typ.)
LDO Controller
Unless otherwise noted, AVDD = AVIN 3.3V, PVIN = 1.8V. Typical values and limits appearing in normal type apply for TA =
25°C. Limits appearing in boldface type apply over the entire junction temperature range for operation, −40°C to +125°C. (1)
(2)
Min
Typ
Max
Units
VIN
Symbol
Operational Voltage Range
Parameter
AVIN LDO internal circuits
Conditions
3.0
3.3
5.5
V
VOUT
NMOS configuration
Externally configured
0.8
1.5
V
VFB
Feedback Voltage Accuracy
0.5
V
−1.5
1.5
−2
2
%
PSRR
Power Supply Ripple Rejection
F = 10 kHz, Load Current = IMAX
−30
dB
TON
Turn On Time
Start up from shut-down
500
µsec
CFB
Feedback Capacitor
C11 (Typ. App. Circuit)
12
Output Capacitor
C10, (3)
Capacitance for stability:
−40°C ≤ TJ ≤ 125°C
COUT
(1)
(2)
(3)
10
ESR (Equivalent Series
Resistance)
pF
µF
22
Ω
0.5
All voltages are with respect to the potential at the GND pin.
Min and Max limits are specified by design, test, or statistical analysis. Typical numbers represent the most likely norm.
Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under
which operation of the device is specified. Operating Ratings do not imply ensured performance limits. For specified performance limits
and associated test conditions, see the Electrical Characteristics tables.
Buck Converters SW1, SW2
Unless otherwise noted, AVDD=AVIN=VIN1=VIN2 = 3.3V, CIN = 10 µF, COUT = 22 µF, LOUT = 0.5 µH. Buck1 is configured to
1.8V. Buck2 is configured to 1.0V. Typical values and limits appearing in normal type apply for TA = 25°C. Limits appearing in
boldface type apply over the entire junction temperature range for operation, −40°C to +125°C. (1) (2)
Symbol
Parameter
VIN
VIN Range
VFB
Feedback Voltage Accuracy
3.0 < VIN < 3.6
IO =1000 mA
DC Load Regulation
100 mA < IO < IMAX
fOSC
Oscillator Frequency
IPEAK
Peak Switching Current Limit
Min
Typ
Max
Units
3.0
3.3
5.5
V
−1.0
+1.0
%
−1.5
+1.5
0.5
DC Line Regulation
ΔVOUT
(1)
(2)
Conditions
AVDD=VIN1=VIN2
0.174
1.8
%/V
0.75
%/A
2.0
MHz
3.2
A
All voltages are with respect to the potential at the GND pin.
Min and Max limits are specified by design, test, or statistical analysis. Typical numbers represent the most likely norm.
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Buck Converters SW1, SW2 (continued)
Unless otherwise noted, AVDD=AVIN=VIN1=VIN2 = 3.3V, CIN = 10 µF, COUT = 22 µF, LOUT = 0.5 µH. Buck1 is configured to
1.8V. Buck2 is configured to 1.0V. Typical values and limits appearing in normal type apply for TA = 25°C. Limits appearing in
boldface type apply over the entire junction temperature range for operation, −40°C to +125°C. (1) (2)
Typ
Max
Units
RDSON (P)
Symbol
Pin-Pin Resistance PFET
Parameter
Conditions
Min
70
100
mΩ
RDSON (N)
Pin-Pin Resistance NFET
80
100
mΩ
TON
Turn On Time
Start up from shut-down
CIN
Input Capacitor
Capacitance for stability
10
CO
Output Capacitor
Capacitance for stability
10
500
µsec
µF
22
µF
I/O Electrical Characteristics
Unless otherwise noted: AVDD=AVIN=VIN1=VIN2 = 3.3V. Typical values and limits appearing in normal type apply for TJ =
25°C. Limits appearing in boldface type apply over the entire junction temperature range for operation, TJ = -40 to +125°C (1)
(2)
Symbol
(1)
(2)
6
Parameter
VIL
Input Low Level, ENSW1, ENSW2, ENLDO
VIH
Input High Level, ENSW1, ENSW2, ENLDO
IOH
nPOR
VOL
nPOR
TnPOR
nPOR Delay
Min
Typ
Max
Units
0.4
V
0.01
2
µA
0.125
0.25
V
200
475
msec
0.8*VIN
60
V
All voltages are with respect to the potential at the GND pin.
Min and Max limits are specified by design, test, or statistical analysis. Typical numbers represent the most likely norm.
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Typical Performance Characteristics — LDO
TA = 25°C unless otherwise noted.
Load Transient VOUT — 1.0V, IOUT = 200 mA-1A
Load Transient VOUT — 1.0V, IOUT = 50 mA- 500 mA
100 mV/
DIV
VOUT
500 mA/
DIV
IL
200 µs/DIV
Figure 2.
Figure 3.
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Typical Performance Characteristics — Buck
TA = 25°C unless otherwise noted.
8
Startup of Buck1: VOUT = 1.8V; IOUT = 100 mA
Startup of Buck1: VOUT = 1.8V; IOUT = 2A
Figure 4.
Figure 5.
Startup of Buck2: VOUT = 1.0V; IOUT = 100 mA
Startup of Buck2: VOUT = 1.0V; IOUT = 2A
Figure 6.
Figure 7.
Line Transient: VIN = 3.0V - 3.6V;
IOUT = 250 mA; VOUT = 1.8V
Line Transient: VIN = 3.3V - 4.2V
IOUT = 250 mA; VOUT = 1.0V
Figure 8.
Figure 9.
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Typical Performance Characteristics — Buck (continued)
TA = 25°C unless otherwise noted.
Buck1 Load Transient: VIN = 3.3V;
VOUT = 1.8V; IOUT = 250 mA - 1.5A
Buck1 Load Transient: VIN = 3.3V;
VOUT = 1.8V; IOUT = 500 mA - 2A
Figure 10.
Figure 11.
Buck2 Load Transient: VIN = 3.3V;
VOUT = 1.0V; IOUT = 250 mA - 1.5A
Buck2 Load Transient: VIN = 3.3V;
VOUT = 1.0V; IOUT = 500 mA - 2A
Figure 12.
Figure 13.
Efficiency of Buck1, VOUT = 1.8V, at Room Temp
Efficiency of Buck2, VOUT = 1.0V, at Room Temp
Figure 14.
Figure 15.
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Typical Performance Characteristics — Buck (continued)
TA = 25°C unless otherwise noted.
Efficiency of Buck1, VOUT = 3.5V at Room Temp
Figure 16.
10
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FLEXIBLE POWER SEQUENCING OF MULTIPLE POWER SUPPLIES
The two bucks and the LDO in the LM26484 can be individually controlled with ENSW1, ENSW2, and ENLDO,
respectively. All the enable inputs need to be either grounded or tied to VIH.
Power-On Reset
The LM26484 provides an active low reset output nPOR. Typical waveform is as shown in Figure 17 below:
AVIN
nPOR
170 ms
Figure 17. Power-On Reset Waveform
LDO Functional Description
The LDO is a linear regulator which targets analog loads characterized by low noise requirements. The LDO is
enabled through the ENLDO pin. The output voltage is determined by the configuration of the external feedback
resistors, as seen in Typical Application Circuit, R5 and R6.
NO-LOAD STABILITY
The LDO will remain stable and in regulation with no external load. This is an important consideration in some
circuits, for example CMOS RAM keep-alive applications.
Table 2. LDO Configuration and Component Selection Guide
Target
Ideal Resistor Values
Common R Values
Actual VOUT with
Com R (V)
Feedback
Capacitor
VOUT(V)
R5 (KΩ)
R6 (KΩ)
R5 (KΩ)
R6 (KΩ)
0.8
120
200
120
200
0.8
C11 (pF)
15
0.9
160
200
162
200
0.905
15
1
200
200
200
200
1
15
1.1
240
200
240
200
1.1
15
1.2
280
200
280
200
1.2
12
1.3
320
200
324
200
1.31
12
1.4
360
200
357
200
1.393
10
1.5
400
200
402
200
1.505
10
RESISTOR SELECTION FOR LDO
The output voltage of the LDO on the LM26484 is established by the feed back resistor divider R5 and R6 shown
on the typical application circuit (page 1). The equation for determining VOUT is: VOUT = VFB*(R5+R6)/R6, where
VFB is the voltage on the LDO_FB pin.
The LDO control loop will force the voltage on VFB to be 0.50V.
Table 2 shows ideal resistor values to establish LDO voltages from 0.8V to 1.5V along with common resistor
values to establish these voltages. Common resistors do not always produce the target value. The resulting
output voltage using common resistors is also found in Table 2. To keep the power consumed by the feedback
network low it is recommended that R6 be established as about 200 kΩ. Lesser values of R6 are OK and can be
used at the user’s discretion.
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NFET SELECTION
There are a few major concerns when selecting an NFET for the LM26484 controller. The most important factor
to consider is the maximum power rating. It is important for the NFET to have a maximum power rating larger
than the application will need. The LM26484 has the ability to drive the gate voltage very close to VIN and down
to approximately 1.5V. Selecting an NFET where the ensured operation of the VGS is ≥1.5V is important.
Table 3. Recommended NFET
Part
Number
Vendor
Si1450DH
VGS
Vishay
PDISSIPATION
1.5V
2.78W
EXTERNAL CAPACITORS
The LDO on the LM26484 requires external capacitors for regulator stability. These are specifically designed for
portable applications requiring minimum board space and smallest components. These capacitors must be
correctly selected for good performance. The tolerance and temperature coefficient must be considered when
selecting the capacitor to ensure that the capacitance will remain close to ideal over the entire operating
temperature range.
FEEDBACK CAPACITOR
A Feedback capacitor is required for stability; recommended values can be seen in Table 2. This capacitor must
be located a distance of not more than 1 cm from the LDO_FB pin and LDO_OUT. Any good quality ceramic or
film capacitor should be used.
OUTPUT CAPACITOR
The LDO on the LM26484 is designed specifically to work with very small ceramic output capacitors. A 10.0 µF
ceramic capacitor, marked as C10 in the Typical Application Circuit on page 1, temperature types Z5U, Y5V or
X7R with ESR between 5 mΩ to 500 mΩ, is suitable for proper operation.
It is also possible to use tantalum or film capacitors, but these are not as attractive for reasons of size and cost.
The output capacitor must meet the requirement for the minimum value of capacitance and also have an ESR
value that is within the range 50 mΩ to 500 mΩ for stability.
CAPACITOR CHARACTERISTICS
The LDO is designed to work with ceramic capacitors on the output to take advantage of the benefits they offer.
For capacitance values in the range of 0.47 μF to 44 μF, ceramic capacitors are the smallest, least expensive
and have the lowest ESR values, thus making them best for eliminating high frequency noise. The ESR of a
typical 10 μF ceramic capacitor is in the range of 20 mΩ to 40 mΩ, which easily meets the ESR requirement for
stability for the LDO.
For both input and output capacitors, careful interpretation of the capacitor specification is required to ensure
correct device operation. The capacitor value can change greatly, depending on the operating conditions and
capacitor type.
In particular, the output capacitor selection should take account of all the capacitor parameters, to ensure that the
specification is met within the application. The capacitance can vary with DC bias conditions as well as
temperature and frequency of operation. Capacitor values will also show some decrease over time due to aging.
The capacitor parameters are also dependent on the particular case size, with smaller sizes giving poorer
performance figures in general.
Buck Regulator Functional Description
The LM26484 incorporates two high efficiency synchronous switching buck regulators which are 180° out of
phase, SW1 and SW2 that deliver voltages from a single DC input voltage. Using a voltage mode architecture
with synchronous rectification, both bucks have the ability to deliver up to 2A depending on the input voltage and
output voltage (voltage head room), and the inductor chosen (maximum current capability).
12
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There are three modes of operation depending on the current required - PWM, PFM, and shutdown. PWM mode
handles current loads of approximately 70 mA or higher, delivering voltage precision with high efficiency. Lighter
output current loads cause the device to automatically switch into PFM for reduced current consumption (Iq = 15
µA typ.) and a longer battery life. The Standby operating mode turns off the device, offering the lowest current
consumption. Forced PWM is factory programmed. For Auto PFM-PWM please contact TI Sales.
Both SW1 and SW2 can operate up to a 100% duty cycle (PMOS switch always on) for low drop out control of
the output voltage. In this way the output voltage will be controlled down to the lowest possible input voltage.
Additional features include soft-start, under-voltage lockout, current overload protection, and thermal overload
protection.
PWM OPERATION
During PWM operation the converter operates as a voltage-mode controller with input voltage feed forward. This
allows the converter to achieve excellent load and line regulation. The DC gain of the power stage is proportional
to the input voltage. To eliminate this dependence, feed forward voltage inversely proportional to the input
voltage is introduced.
INTERNAL SYNCHRONOUS RECTIFICATION
While in PWM mode, the buck uses an internal NFET as a synchronous rectifier to reduce rectifier forward
voltage drop and associated power loss. Synchronous rectification provides a significant improvement in
efficiency whenever the output voltage is relatively low compared to the voltage drop across an ordinary rectifier
diode.
CURRENT LIMITING
A current limit feature allows the converter to protect the LM26484 and any external components during overload
conditions. An internal comparator senses the voltage across an internal sense resistor and will turn on the NFET
when the output current is sensed at 2.5A (min.) with 0.5 µH inductors. If the output is shorted to ground the
device enters a timed current limit mode where the NFET is turned on for a longer duration until the inductor
current falls below a low threshold, ensuring inductor current has more time to decay, thereby preventing
runaway.
PFM OPERATION
At very light loads, the converter enters PFM mode and operates with reduced switching frequency and supply
current to maintain high efficiency. For the PFM mode to be enabled, please contact TI Sales.
The part will automatically transition into PFM mode when either of two conditions occurs for a duration of 32 or
more clock cycles:
A. The inductor current becomes discontinuous
or
B. The peak PMOS switch current drops below the IMODE level
(Typically IMODE < 66 mA +
VIN
)
100:
(1)
During PFM operation, the converter positions the output voltage slightly higher than the nominal output voltage
during PWM operation, allowing additional headroom for voltage drop during a load transient from light to heavy
load. The PFM comparators sense the output voltage via the feedback pin and control the switching of the output
FETs such that the output voltage ramps between 0.8% and 1.6% (typ.) above the nominal PWM output voltage.
If the output voltage is below the ‘high’ PFM comparator threshold, the PMOS power switch is turned on. It
remains on until the output voltage exceeds the ‘high’ PFM threshold or the peak current exceeds the IPFM level
set for PFM mode. The typical peak current in PFM mode is:
IPFM = 66 mA +
VIN
80:
(2)
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Once the PMOS power switch is turned off, the NMOS power switch is turned on until the inductor current ramps
to zero. When the NMOS zero-current condition is detected, the NMOS power switch is turned off. If the output
voltage is below the ‘high’ PFM comparator threshold (see Figure 18), the PMOS switch is again turned on and
the cycle is repeated until the output reaches the desired level. Once the output reaches the ‘high’ PFM
threshold, the NMOS switch is turned on briefly to ramp the inductor current to zero and then both output
switches are turned off and the part enters an extremely low power mode. Quiescent supply current during this
‘sleep’ mode is less than 30 µA, which allows the part to achieve high efficiencies under extremely light load
conditions. When the output drops below the ‘low’ PFM threshold, the cycle repeats to restore the output voltage
to ~1.6% above the nominal PWM output voltage.
If the load current should increase during PFM mode (see Figure 18) causing the output voltage to fall below the
‘low2’ PFM threshold, the part will automatically transition into fixed-frequency PWM mode.
During shutdown the PFET switch, reference, control and bias circuitry of the converters are turned off. The
NFET switch will be on in shutdown to discharge the output. When the converter is enabled, soft start is
activated. It is recommended to disable the converter during the system power up and under voltage conditions
when the supply is less than 3.0V.
High PFM Threshold
~1.016*Vout
PFM Mode at Light Load
Z-A
Load current
increases
xis
Low1 PFM Threshold
~1.008*Vout
ZAxis
Z-Axis
PFET on
until
IPFM limit
reached
ZA
NFET on
drains
conductor
current
until
I inductor = 0
High PFM
Voltage
Threshold
reached,
go into
sleep mode
xi s
Current load
increases,
Low PFM
Threshold,
turn on
PFET
draws VOUT
towards
Low2 PFM
Threshold
Low2 PFM Threshold
Vout
Low2 PFM Threshold,
switch back to PWM mode
PWM Mode at Moderate to
Heavy Loads
ZAx
is
-18
Figure 18. PFM vs PWM
SOFT START
The soft-start feature allows the power converter to gradually reach the initial steady state operating point, thus
reducing start-up stresses and surges. The two LM26484 buck converters have a soft-start circuit that limits inrush current during start-up or the one which ramps up output voltage linearly over about 500 µs. During start-up
the switch current limit is ramped up (100 µs, typ.), depending on the kind of soft-start. Soft start is activated only
if EN goes from logic low to logic high after VIN reaches 2.8V.
14
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LOW DROPOUT OPERATION
The LM26484 can operate at 100% duty cycle (no switching; PMOS switch completely on) for low dropout
support of the output voltage. In this way the output voltage will be controlled down to the lowest possible input
voltage. When the device operates near 100% duty cycle, output voltage ripple is approximately 25 mV. The
minimum input voltage needed to support the output voltage is
VIN, MIN = ILOAD * (RDSON, PFET + RINDUCTOR) + VOUT
(3)
ILOAD
Load current
RDSON, PFET
Drain to source resistance of
PFET switch in the triode region
RINDUCTOR
Inductor resistance
Component Selection
SW1, SW2 OPERATION
Table 4. Buck1/2 Configuration and Component Selection Guide
Target
Ideal Resistor Values
Common R Values
Actual VOUT
with Com/R (V)
Actual VOUT
Delta from
Target (V)
Feedback Capacitors
VOUT (V)
R1/3 (KΩ)
R2/4 (KΩ)
R1/3 (KΩ)
R2/4 (KΩ)
(V)
(V)
C3/6 (pF)
C4/8 (pF)
0.8
120
200
121
200
0.803
0.002
15
none
0.9
160
200
162
200
0.905
0.005
15
none
1
200
200
200
200
1
0
15
none
1.1
240
200
240
200
1.1
0
15
none
1.2
280
200
280
200
1.2
0
12
none
1.3
320
200
324
200
1.31
0.01
12
none
1.4
360
200
357
200
1.393
-0.008
10
none
1.5
400
200
402
200
1.505
0.005
10
none
1.6
440
200
442
200
1.605
0.005
8.2
none
1.7
427
178
432
178
1.713
0.013
8.2
none
1.8
463
178
464
178
1.803
0.003
8.2
none
1.9
498
178
499
178
1.902
0.002
8.2
none
2
450
150
453
150
2.01
0.01
8.2
none
2.1
480
150
475
150
2.083
-0.017
8.2
none
2.2
422
124
422
124
2.202
0.002
8.2
none
2.3
446
124
442
124
2.282
-0.018
8.2
none
2.4
471
124
475
124
2.415
0.015
8.2
none
2.5
400
100
402
100
2.51
0.01
8.2
none
2.6
420
100
422
100
2.61
0.01
8.2
none
2.7
440
100
442
100
2.71
0.01
8.2
33
2.8
460
100
464
100
2.82
0.02
8.2
33
2.9
480
100
475
100
2.875
-0.025
8.2
33
3
500
100
499
100
2.995
-0.005
6.8
33
3.1
520
100
523
100
3.115
0.015
6.8
33
3.2
540
100
536
100
3.18
-0.02
6.8
33
3.3
560
100
562
100
3.31
0.01
6.8
33
3.4
580
100
576
100
3.38
-0.02
6.8
33
3.5
600
100
604
100
3.52
0.02
6.8
33
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The Buck control loop will force the voltage on VFB to be 0.50V.
Table 4 shows ideal resistor values to establish buck voltages from 0.8V to 3.5V along with common resistor
values to establish these voltages. Common resistors do not always produce the target value, error is given in
the delta column.
CAP VALUE (% of NOMINAL 1 PF)
In addition to the resistor feedback, feedback capacitors are also required. (Table 4 — C3/4/6/8) When choosing
the output voltage for the two bucks, please take into account the fact that, the factory has optimized the
accuracy of Buck1 at the top end of the VOUT range and Buck2 for the bottom end of the VOUT range.
0603, 10V, X5R
100%
80%
60%
0402, 6.3V, X5R
40%
20%
0
1.0
2.0
3.0
4.0
5.0
DC BIAS (V)
Figure 19. Typical Variation in Capacitance vs. DC Bias
As shown in Table 4, increasing the DC Bias condition can result in a capacitance value that falls below the
minimum value given in the recommended capacitor specifications table. Note that the graph shows the
capacitance out of spec for the 0402 case size capacitor at higher bias voltages. It is therefore recommended
that the capacitor manufacturers’ specifications for the nominal value capacitor are consulted for all conditions,
as some capacitor sizes (e.g. 0402) may not be suitable in the actual application.
The ceramic capacitor’s capacitance can vary with temperature. The capacitor type X7R, which operates over a
temperature range of −55°C to +125°C, will only vary the capacitance to within ±15%. The capacitor type X5R
has a similar tolerance over a reduced temperature range of −55°C to +85°C. Many large value ceramic
capacitors, larger than 1 μF are manufactured with Z5U or Y5V temperature characteristics. Their capacitance
can drop by more than 50% as the temperature varies from 25°C to 85°C. Therefore X7R is recommended over
Z5U and Y5V in applications where the ambient temperature will change significantly above or below 25°C.
Tantalum capacitors are less desirable than ceramic for use as output capacitors because they are more
expensive when comparing equivalent capacitance and voltage ratings in the 0.47 µF to 44 µF range. Another
important consideration is that tantalum capacitors have higher ESR values than equivalent size ceramics. This
means that while it may be possible to find a tantalum capacitor with an ESR value within the stable range, it
would have to be larger in capacitance (which means bigger and more costly) than a ceramic capacitor with the
same ESR value. It should also be noted that the ESR of a typical tantalum will increase about 2:1 as the
temperature goes from 25°C down to −40°C, so some guard band must be allowed.
OUTPUT INDUCTORS & CAPACITORS FOR SW1 AND SW2
There are several design considerations related to the selection of output inductors and capacitors:
• Load transient response;
• Stability;
• Efficiency;
• Output ripple voltage; and
• Over-current ruggedness.
The LM26484 has been optimized for use with nominal values 0.5 µH and 22 µF. If other values are needed for
the design, please contact TI sales with any concerns.
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INDUCTOR SELECTION FOR SW1 AND SW2
A nominal inductor value of 0.5 µH is recommended. It is important to ensure the inductor core does not saturate
during any foreseeable operational situation.
Care should be taken when reviewing the different saturation current ratings that are specified by different
manufacturers. Saturation current ratings are typically specified at 25ºC, so ratings at maximum ambient
temperature of the application should be requested from the manufacturer.
There are two methods to choose the inductor saturation current rating:
Recommended method:
The best way to ensure the inductor does not saturate is to choose an inductor that has saturation current rating
greater than the maximum LM26484 current limit of 3.0A. In this case the device will prevent inductor saturation.
Alternate method:
If the recommended approach cannot be used, care must be taken to ensure that the saturation current is
greater than the peak inductor current:
ISAT > ILPEAK
ILPEAK = IOUTMAX +
IRIPPLE
2
D x (VIN ± VOUT)
LxF
VOUT
D=
VIN x EFF
IRIPPLE =
where
•
•
•
•
•
•
•
•
•
•
•
ISAT: Inductor saturation current at operating temperature
ILPEAK: Peak inductor current during worst case conditions
IOUTMAX: Maximum average inductor current
IRIPPLE: Peak-to-Peak inductor current
VOUT: Output voltage
VIN: Input voltage
L: Inductor value in Henries at IOUTMAX
F: Switching frequency, Hertz
D: Estimated duty factor
EFF: Estimated power supply efficiency
(4)
ISAT may not be exceeded during any operation, including transients, startup, high temperature, worst case
conditions, etc.
Inductor
Value
Unit
Description
Notes
L1 and L2
0.5
µH
SW1 and SW2 inductor
D.C.R. 50 mΩ
SUGGESTED INDUCTORS AND THEIR SUPPLIERS
Output Voltage Range
Vendor
Part Number
Value
DCR (max)
VOUT ≥ 2.0V
Coilcraft
LPS4012–222ML
2.2 µH
100 mΩ
VOUT < 2.0V
Coilcraft
LPS4414–501ML
0.5 µH
50 mΩ
OUTPUT CAPACITOR SELECTION FOR SW1 AND SW2
A ceramic output capacitor of 10 µF, 6.3V is recommended with an ESR of less than 500 mΩ.
Output ripple can be estimated from the vector sum of the reactive (Capacitor) voltage component and the real
(ESR) voltage component of the output capacitor.
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IRIPPLE
8 x F x COUT
VCOUT =
VROUT = IRIPPLE x ESRCOUT
VPPOUT =
VCOUT2 + VROUT2
where
•
•
•
VCOUT: Estimated reactive output ripple
VROUT: Estimated real output ripple
VPPOUT: Estimated peak-to-peak output ripple
(5)
The output capacitor needs to be mounted as close as possible to the output pin of the device.
The output filter capacitor smooths out current flow from the inductor to the load, helps maintain a steady output
voltage during transient load changes and reduces output voltage ripple. These capacitors must be selected with
sufficient capacitance and sufficiently low ESR to perform these functions.
Note that the output voltage ripple is dependent on the inductor current ripple and the equivalent series
resistance of the output capacitor (ESRCOUT). ESRCOUT is frequency dependent as well as temperature
dependent. The RESR should be calculated with the applicable switching frequency and ambient temperature.
INPUT CAPACITOR SELECTION FOR SW1 AND SW2
It is required to use a ceramic input capacitor of at least 10 μF and 6.3V with an ESR of less than 500 mΩ.
The input power source supplies average current continuously. During the PFET switch on-time, however, the
demanded di/dt is higher than can be typically supplied by the input power source. This delta is supplied by the
input capacitor.
A simplified “worst case” assumption is that all of the PFET current is supplied by the input capacitor. This will
result in conservative estimates of input ripple voltage and capacitor RMS current. Input ripple voltage is
estimated as follows:
IOUT x D
VPPIN = C x F + IOUT x ESRCIN
IN
where
•
•
•
•
VPPIN: Estimated peak-to-peak input ripple voltage
IOUT: Output current, Amps
CIN: Input capacitor value, Farads
ESRIN: Input capacitor ESR, Ohms
(6)
This capacitor is exposed to significant RMS current, so it is important to select a capacitor with an adequate
RMS current rating. Capacitor RMS current estimated as follows:
D x §IOUT2 +
©
IRIPPLE
12
2
§
©
IRMSCIN =
where
•
IRSCIN: Estimated input capacitor RMS current
Model
Type
(7)
Vendor
Voltage Rating
Case Size Inch
(mm)
10 µF for CIN or COUT; C9, C2, C1, C5, C7, C10
18
GRM21BR60J106K
Ceramic, X7R
Murata
6.3V
0805, (2012)
JMK212BJ106K
Ceramic, X5R
Taiyo-Yuden
6.3V
0805, (2012)
LMK212C106KG-T
Ceramic, X7R
Taiyo-Yuden
10V
0805, (2012)
C1608X5R0J106K
Ceramic, X5R
TDK
6.3V
0603, (1608)
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SNVS573F – SEPTEMBER 2008 – REVISED MARCH 2013
Model
Type
Vendor
Voltage Rating
Case Size Inch
(mm)
22 µF for COUT; C10, C2, C7
GRM31CR70J226KE23L
Ceramic, X7R
Murata
6.3V
1206, (3216)
JMK316B7226ML-T
Ceramic, X7R
Taiyo-Yuden
6.3V
1206, (3216)
Capacitor
Min Value
Unit
Description
Recommended Type
C10, Table 4
10.0
µF
LDO1 output capacitor
Ceramic, 6.3V, X5R
C2, Table 4
10.0
µF
SW1 output capacitor
Ceramic, 6.3V, X5R
C7, Table 4
10.0
µF
SW2 output capacitor
Ceramic, 6.3V, X5R
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REVISION HISTORY
Changes from Revision E (March 2013) to Revision F
•
20
Page
Changed layout of National Data Sheet to TI format .......................................................................................................... 19
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
LM26484SQ/NOPB
ACTIVE
WQFN
NHZ
24
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
26484SQ
LM26484SQE/NOPB
ACTIVE
WQFN
NHZ
24
250
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
26484SQ
LM26484SQX/NOPB
ACTIVE
WQFN
NHZ
24
4500
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
26484SQ
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of