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SN65LBC173A-EP
SLLSEH1 – NOVEMBER 2016
SN65LBC173A-EP Quadruple RS-485 Differential Line Receiver
1 Features
3 Description
•
The SN65LBC173A is a quadruple differential line
receiver with tri-state outputs, designed for TIA/EIA485 (RS-485), TIA/EIA-422 (RS-422), and ISO 8482
(Euro RS-485) applications.
1
•
•
•
•
•
•
•
Designed for TIA/EIA-485, TIA/EIA-422 and
ISO 8482 Applications
Signaling Rates (1) up to 50 Mbps.
Fail-Safe in Bus Short-Circuit, Open-Circuit, and
Idle-Bus Conditions
ESD Protection on Bus Inputs Exceeds 6 kV
Common-Mode Bus Input Range –7 V to 12 V
Propagation Delay Times < 18 ns
Low-Standby Power Consumption < 32 µA
Pin-Compatible Upgrade for AM26LS32,
DS96F173, LTC488, and SN75173
2 Applications
•
Supports Defense, Aerospace, and Medical
Applications
– Controlled Baseline
– One Assembly and Test Site
– One Fabrication Site
– Extended Product Life Cycle
– Extended Product-Change Notification
– Product Traceability
This device is optimized for balanced multipoint bus
communication at data rates up to and exceeding 50
million bits per second. The transmission media may
be twisted-pair cables, printed-circuit board traces, or
backplanes. The ultimate rate and distance of data
transfer is dependent upon the attenuation
characteristics of the media and the noise coupling to
the environment.
The receiver operates over a wide range of positive
and negative common-mode input voltages, and
features ESD protection to 6 kV, making it suitable for
high-speed multipoint data transmission applications
in harsh environments. These devices are designed
using
LinBiCMOS®,
facilitating
low-power
consumption and robustness.
The G and G inputs provide enable control
either positive- or negative-logic enabling
drivers. When disabled or powered off, the
inputs present a high-impedance to the
reduced system loading.
logic for
all four
receiver
bus for
Device Information(1)
PART NUMBER
(1)
The signaling rate of a line is the number of voltage
transitions that are made per second expressed in the units
bps (bits per second).
.
SN65LBC173A-EP
PACKAGE
SOIC (16)
BODY SIZE (NOM)
9.90 mm × 3.90 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Logic Diagram
G
G
1A
1Y
1B
2A
2Y
2B
3A
3Y
3B
4A
4Y
4B
Copyright © 2016, Texas Instruments Incorporated
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
SN65LBC173A-EP
SLLSEH1 – NOVEMBER 2016
www.ti.com
Table of Contents
1
2
3
4
5
6
7
8
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
6.7
4
4
4
4
5
5
7
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Switching Characteristics ..........................................
Typical Characteristics ..............................................
8.3 Feature Description................................................. 10
8.4 Device Functional Modes........................................ 11
9
Application and Implementation ........................ 12
9.1 Application Information............................................ 12
9.2 Typical Application .................................................. 12
10 Power Supply Recommendations ..................... 14
11 Layout................................................................... 14
11.1 Layout Guidelines ................................................. 14
11.2 Layout Example .................................................... 14
12 Device and Documentation Support ................. 15
12.1
12.2
12.3
12.4
12.5
Parameter Measurement Information .................. 8
Detailed Description ............................................ 10
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
15
15
15
15
15
13 Mechanical, Packaging, and Orderable
Information ........................................................... 16
8.1 Overview ................................................................. 10
8.2 Functional Block Diagram ....................................... 10
4 Revision History
2
DATE
REVISION
NOTES
November 2016
*
Initial release.
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Product Folder Links: SN65LBC173A-EP
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SLLSEH1 – NOVEMBER 2016
5 Pin Configuration and Functions
D Package
16-Pin SOIC
Top View
1B
1
16
VCC
1A
2
15
4B
1Y
3
14
4A
G
4
13
4Y
2Y
5
12
G
2A
6
11
3Y
2B
7
10
3A
GND
8
9
3B
Not to scale
Pin Functions
PIN
NAME
NO.
1A
2
1B
1Y
I/O
DESCRIPTION
I
RS-485 differential input (noninverting).
1
I
RS-485 differential input (inverting).
3
O
Logic level output.
2A
6
I
RS-485 differential input (noninverting).
2B
7
I
RS-485 differential input (inverting).
2Y
5
O
Logic level output.
3A
10
I
RS-485 differential input (noninverting).
3B
9
I
RS-485 differential input (inverting).
3Y
11
O
Logic level output.
4A
14
I
RS-485 differential input (noninverting).
4B
15
I
RS-485 differential input (inverting).
4Y
13
O
Logic level output.
G
12
I
Active-low select.
G
4
I
Active-high select.
GND
8
—
Ground.
VCC
16
—
Power supply.
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SN65LBC173A-EP
SLLSEH1 – NOVEMBER 2016
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN
MAX
UNIT
Supply voltage, VCC (2)
–0.3
6
V
Voltage at any bus input (DC)
–10
15
V
Voltage at any bus input (transient pulse through 100 Ω, see Figure 10)
–30
30
V
Input voltage at G and G, VI
–0.5
VCC + 0.5
V
Receiver output current, IO
–10
10
mA
Storage temperature, Tstg
–65
150
°C
(1)
(2)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values, except differential I/O bus voltages, are with respect to GND.
6.2 ESD Ratings
VALUE
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
V(ESD)
Electrostatic discharge
Charged-device model (CDM), per JEDEC specification
JESD22-C101 (2)
(1)
(2)
A and B to GND
±6000
All pins
±5000
All pins
±2000
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
VCC
Supply voltage
Voltage at any bus terminal
VIH
High-level input voltage
VIL
Low-level input voltage
A, B
G, G
Output current
TJ
Y
Junction temperature
MIN
NOM
MAX
UNIT
4.75
5
5.25
V
–7
12
V
2
VCC
V
0
0.8
–8
8
mA
V
–55
125
°C
6.4 Thermal Information
SN65LBC173A-EP
THERMAL METRIC
(1)
D (SOIC)
UNITS
16 PINS
θJA
Junction-to-ambient thermal resistance
78
°C/W
θJCtop
Junction-to-case (top) thermal resistance
39.5
°C/W
θJB
Junction-to-board thermal resistance
35.4
°C/W
ψJT
Junction-to-top characterization parameter
8.5
°C/W
ψJB
Junction-to-board characterization parameter
35.1
°C/W
(1)
4
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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SLLSEH1 – NOVEMBER 2016
6.5 Electrical Characteristics
over recommended operating conditions
PARAMETER
TEST CONDITIONS
VIT+
Positive-going differential input voltage threshold
VIT-
Negative-going differential input voltage threshold
–7 V ≤ VCM ≤ 12 V (VCM = (VA + VB ) / 2)
MIN
TYP (1)
–200
–120
mV
40
mV
–80
VHYS Hysteresis voltage (VIT+ – VIT−)
VIK
Input clamp voltage
II = –18 mA
VOH
High-level output voltage
VID = 200 mV,
IOH = –8 mA
VOL
Low-level output voltage
VID = –200 mV,
IOL = 8 mA
IOZ
High-impedance-state output current
VO = 0 V to VCC
Other input at 0 V,
VCC = 0 V or 5 V
II
Line input current
IIH
High-level input current
IIL
Low-level input current
RI
Input resistance
ICC
(1)
MAX UNIT
–10
–1.5
–0.8
V
2.7
4.8
V
See Figure 6
0.2
0.4
V
1
µA
–1
VI = 12 V
0.9
VI = –7 V
–0.7
110
Enable inputs G, G
A, B inputs
VID = 5 V
G at 0 V, G at
VCC
No load
G at VCC, G at 0
V
Supply current
mV
mA
µA
–100
µA
12
kΩ
11
32
µA
16
mA
All typical values are at VCC = 5 V and 25°C.
6.6 Switching Characteristics
over recommended operating conditions
PARAMETER
TEST CONDITIONS
tr
Differential output voltage rise time
tf
Differential output voltage fall time
tPLH
Propagation delay time, low-to-high level output
tPHL
Propagation delay time, high-to-low level output
tPZH
Propagation delay time, high-impedance-to-high-level output
tPHZ
Propagation delay time, high-level-output-to-high impedance
tPZL
Propagation delay time, high-impedance-to-low-level output
tPLZ
Propagation delay time, low-level-output-to-high impedance
tsk(p)
Pulse skew (|tPLH – tPHL|)
tsk(o)
Output skew (1)
tsk(pp)
(1)
(2)
Part-to-part skew
VID = –3 V to 3 V,
See Figure 7
See Figure 8
See Figure 9
(2)
MIN
TYP MAX
UNIT
2
7
ns
2
7
ns
8
12
18
ns
8
12
18
ns
27
39
ns
7
24
ns
29
39
ns
12
18
ns
0.2
2
ns
3
ns
3
ns
Output skew (tsk(o)) is the magnitude of the time delay difference between the outputs of a single device with all of the inputs connected
together.
Part-to-part skew (tsk(pp)) is the magnitude of the difference in propagation delay times between any specified terminals of two devices
when both devices operate with the same input signals, the same supply voltages, at the same temperature, and have identical
packages and test circuits.
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SN65LBC173A-EP
SLLSEH1 – NOVEMBER 2016
www.ti.com
100
Life (yr)
10
1
0.1
85
105
125
Operating Junction Temperature (qC)
145
165
D001
(1)
See data sheet for absolute maximum and minimum recommended operating conditions.
(2)
Silicon operating life design goal is 10 years at 105°C junction temperature (does not include package interconnect
life).
(3)
Enhanced plastic product disclaimer applies.
Figure 1. SN65LBC173A-EP Wirebond Life Derating Chart
6
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SLLSEH1 – NOVEMBER 2016
6.7 Typical Characteristics
6
800
600
5
400
VO − Output Voltage − V
Bus Input Current −µ A
VCC = 0 V
VCC = 5 V
200
0
−200
VIC = −7 V
VIC = 0 V
VIC = 12 V
4
VIC = −7 V
VIC = 0 V
VIC = 12 V
3
2
1
−400
−600
−10
−5
0
5
10
0
−150
15
−100
Bus Input Voltage − V
VCC = 5 V
14
50
13.5
Propagation Delay Time (ns)
I CC − Supply Current − mA
60
40
VCC = 5.25 V, CL = 15 pF
VCC = 5 V, CL = 15 pF
VCC = 4.75 V, CL = 15 pF
20
0
50
TA = 25°C
Figure 3. Output Voltage vs Differential Input Voltage
Figure 2. Bus Input Current vs Bus Input Voltage
30
−50
Differential Input Voltage − mV
13
12.5
12
11.5
TPHL
TPLH
10
VCC = 5 V, No Load
11
-55
-35
-15
5
25
45
65
85
Operating Junction Temperature (qC)
105
0
1
125
D005
10
100
Signaling Rate (All Four Channels) − Mbps
Figure 4. Supply Current vs Signaling Rate (All Four
Channels)
Figure 5. Propagation Delay Time vs Free-Air Temperature
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SN65LBC173A-EP
SLLSEH1 – NOVEMBER 2016
www.ti.com
7 Parameter Measurement Information
VA
IO
VID
VB
VO
Figure 6. Voltage and Current Definitions
Generator
Input B
A
50 Ω
3V
1.5 V
1.5 V
Y
Input A
B
0V
tPLH
Generator
CL = 15 pF
(Includes Probe and
Jig Capacitance)
50 Ω
tPHL
1.5 V
Output Y
90%
10%
tr
VOH
90%
10%
VOL
tf
Generators: PRR = 1 MHz, 50% Duty Cycle,
tr