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TAS2560
SLASE86E – JUNE 2016 – REVISED DECEMBER 2017
TAS2560 5.6-W Class-D Mono Audio Amplifier with IV Sense
1 Features
3 Description
•
The TAS2560 is a low-power, high-performance,
digital input, boosted Class-D Audio amplifier that can
be easily implemented in both mono and stereo (x2)
applications. The device features an ultra low-noise
audio DAC and Class-D power amplifier which
incorporates speaker voltage and current sensing
feedback for use with speaker protection algorithms.
1
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•
•
•
•
•
•
•
•
•
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Ultra Low-Noise Mono Boosted Class-D Amplifier
– 5.6 W at 1% THD+N and 6.9 W at 10%
THD+N into 4-Ω Load from 4.2-V Supply
– 3.7 W at 1% THD+N and 4.5 W at 10%
THD+N into 8-Ω Load from 4.2-V Supply
Output Noise for DAC + Class-D(ICN) is 16.2 μV
DAC + Class-D SNR 111 dB at 1%THD+N / 8 Ω
THD+N –89 dB at 1 W / 8 Ω with Flat Frequency
Response
Post-Filter Feedback (PFFB)
PSRR 110 dB for 200 mVpp Ripple at 217 Hz
Input Sample Rates from 8 kHz to 96 kHz
High Efficiency Class-H Boost Converter
– Automatically Adjusts Class-D Supply
– Multi-level Tracking to Improve Efficiency
Built-In Speaker Sense
– Measures Speaker Current and Voltage
– Measures VBAT Voltage, Chip Temperature
Built-In Automatic Gain Control (AGC)
– Limits Battery Current Consumption
Adjustable Class-D Switching Edge-Rate Control
Power Supplies
– Boost Input: 2.9 V to 5.5 V
– Analog/Digital: 1.65 V to 1.95 V
– Digital I/O: 1.62 V to 3.6 V
Thermal, Short-Circuit, and Under-Voltage
Protection
I2S, Left-Justified, Right-Justified, DSP, and TDM,
and PDM
I2C Interface for Register Control
Stereo Configuration Using Two TAS2560
Devices
2 Applications
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•
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Mobile Phones
Tablets
Personal Electronics
Building / Home Automation
Bluetooth Speakers and Accessories
A Class-H boost converter generates the Class-D
amplifier supply rail. When the audio signal requires
only a lower Class-D output power, system efficiency
is improved by deactivating the boost and connecting
VBAT directly to the Class-D amplifier supply. When
higher audio output power is required, the multi-level
boost re-activates tracking the signal to provide the
additional voltage to the load.
A configurable on-chip Battery Guard system reduces
the audio output power during the periods of low
battery voltage to minimize the battery dropping
below system brownout conditions. Additionally, faults
such as brownout, over-current, and overtemperature can be reported back to the host
processor using the IRQ pin. All protection statuses
are available via a register read.
Device Information(1)
PART NUMBER
TAS2560
PACKAGE
BODY SIZE (NOM)
WCSP (30)
2.85 mm x 2.63 mm
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
Simplfied Schematic
L1
VBAT
2 SW
C1
VREG
VBOOST
2
Ferrite bead
(optional)
SPK_P
MCLK
I2S
4
I2C
2
/RESET
TAS2560
SPK_N
Ferrite bead
(optional)
C2
+
To Speaker
-
VSENSE_P
VSENSE_N
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TAS2560
SLASE86E – JUNE 2016 – REVISED DECEMBER 2017
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Device Comparison Table.....................................
Pin Configuration and Functions .........................
Specifications.........................................................
7.1
7.2
7.3
7.4
7.5
7.6
7.7
7.8
7.9
7.10
7.11
7.12
8
9
1
1
1
2
3
4
5
Absolute Maximum Ratings ...................................... 5
ESD Ratings.............................................................. 5
Recommended Operating Conditions....................... 5
Thermal Information .................................................. 5
Electrical Characteristics........................................... 6
I2C Timing Requirements.......................................... 8
I2S/LJF/RJF Timing in Master Mode......................... 9
I2S/LJF/RJF Timing in Slave Mode .......................... 9
DSP Timing in Master Mode ..................................... 9
DSP Timing in Slave Mode ................................... 10
PDM Timing .......................................................... 10
Typical Characteristics .......................................... 13
Parameter Measurement Information ................ 16
Detailed Description ............................................ 17
9.1 Overview ................................................................. 17
9.2 Functional Block Diagram ....................................... 17
9.3
9.4
9.5
9.6
9.7
Feature Description.................................................
Device Functional Modes........................................
Operational Modes..................................................
Programming...........................................................
Register Map...........................................................
18
30
41
45
49
10 Application and Implementation........................ 69
10.1 Application Information.......................................... 69
10.2 Typical Applications .............................................. 69
10.3 Initialization Set Up ............................................... 71
11 Power Supply Recommendations ..................... 72
11.1 Power Supplies ..................................................... 72
11.2 Power Supply Sequencing .................................... 72
12 Layout................................................................... 73
12.1 Layout Guidelines ................................................. 73
12.2 Layout Example .................................................... 73
13 Device and Documentation Support ................. 74
13.1
13.2
13.3
13.4
13.5
Documentation Support .......................................
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
74
74
74
74
74
14 Mechanical, Packaging, and Orderable
Information ........................................................... 74
14.1 Package Dimensions ............................................ 74
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision D (November 2017) to Revision E
Page
•
Changed MAX Switching value in the Absolute Maximum Ratings table to 1.8 .................................................................... 5
•
Changed Absolute Maximum Ratings table note ................................................................................................................... 5
•
Changed MIN value of C1 to 10 .......................................................................................................................................... 70
•
Changed Capacitance at 8.5 V derating specification of C2 to 3.3...................................................................................... 70
•
Added missing text to end of Boost Converter Passive Devices section............................................................................. 70
Changes from Revision C (July 2017) to Revision D
•
Changed the Boost Converter Passive Devices section ...................................................................................................... 70
Changes from Revision B (August 2016) to Revision C
•
2
Page
Changed package body size from '2.80 mm × 2.60 mm' to '2.85 mm × 2.63 mm' ................................................................ 1
Changes from Revision A (June 2016) to Revision B
•
Page
Page
Changed package drawings. ................................................................................................................................................ 74
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TAS2560
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SLASE86E – JUNE 2016 – REVISED DECEMBER 2017
Changes from Original (June 2016) to Revision A
•
Page
Changed Product Preview to Production Data....................................................................................................................... 1
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TAS2560
SLASE86E – JUNE 2016 – REVISED DECEMBER 2017
www.ti.com
5 Device Comparison Table
PART
NUMBER
CONTROL
METHOD
Boost Voltage
SNR (1)
ICN (1)
THD+N
Boost Control
SmartAmp
Digital Engine
TAS2552
I2C
8.5 V
94 dB
130 µV
-64 dB
Class-G
NO (External
Processing
Required)
TAS2553
I2C
7.5 V
94 dB
130 µV
-64 dB
Class-G
NO (External
Processing
Required)
TAS2555
I2C or SPI
8.5 V
111 dB
15.9 µV
-90 dB
Class-H
YES (Processing
on Chip)
TAS2560
I2C
8.5 V
111 dB
16.2 µV
-88 dB
Class-H
NO (External
Processing
Required)
(1)
4
A weighted data.
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SLASE86E – JUNE 2016 – REVISED DECEMBER 2017
6 Pin Configuration and Functions
30-Ball WCSP
YFF Package
(Top View)
F5
F4
F3
F2
F1
PGND_B
PGND_B
VBAT
SDA
RESETZ
E5
E4
E3
E2
E1
SW
SW
SCL
DOUT
PDMCLK
D5
D4
D3
D2
D1
VBOOST
VBOOST
GND
BCLK
DIN
C5
C4
C3
C2
C1
SPK_P
VREG
GND
NC1
WCLK
B5
B4
B3
B2
B1
PGND
VSENSE_N
VDD
NC2
MCLK
A5
A4
A3
A2
A1
SPK_N
VSENSE_P
IRQ
IOVDD
ADDR
Pin Functions
PIN
NAME
BALL NO.
ADDR
A1
IOVDD
IRQ
I/O/POWER
DESCRIPTION
I
I2C device ID setting
A2
P
1.8V or 3.3V Digital interface Power Supply for digital input and output levels
A3
O
Active-high interrupt output
VSENSE_P
A4
I
Non-inverting voltage sense input
SPK_N
A5
O
Non-inverting Class D output
MCLK
B1
I
Master clock input
NC2
B2
-
Float Connection - Do not route any signal or supply to or through this pin
VDD
B3
P
1.8V power supply
VSENSE_N
B4
I
Inverting voltage sense input
PGND
B5
P
Power ground, connect to high current ground plane
WCLK
C1
I/O
NC1
C2
-
Float Connection - Do not route any signal or supply to or through this pin
GND
C3,D3
P
Power ground, connect to high current ground plane
VREG
C4
P
Voltage regulator output
SPK_P
C5
O
Inverting Class D output
DIN
D1
I
Audio serial interface data input
BCLK
D2
I/O
VBOOST
D4,D5
P
Boost converter output
PDMCLK
E1
I/O
PDM bit stream clock
DOUT
E2
O
Audio serial interface data output
SCL
E3
I
I2C interface serial clock
SW
E4,E5
P
Boost converter switch input
Active-low hardware reset
Audio serial interface word clock
Audio serial interface bit clock
RESETZ
F1
I
SDA
F2
I/O
F3
P
Battery power supply, connect to 2.9 V to 5.5 V battery supply
F4,F5
P
Power ground, connect to high current ground plane
VBAT
PGND_B
I2C interface serial data
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SLASE86E – JUNE 2016 – REVISED DECEMBER 2017
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7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range, TA = 25°C (unless otherwise noted)
MIN
MAX
Battery voltage
VBAT
–0.3
6
V
Analog supply voltage
VDD
–0.3
2
V
I/O supply voltage
IOVDD
–0.3
3.9
V
Boost
VBST
–0.3
9.2
V
(1)
V
Switching
SW
–0.7
Regulator voltage
VREG
–0.3
VBST + 5
V
–0.3
IOVDD + 0.3
V
Digital input voltage
Output continuous total power dissipation
See Thermal Information
Storage temperature, Tstg
(1)
VBST + 1.8
UNIT
–65
150
°C
Cannot exceed 11 V for greater than 10 nS or 10 V continuously.
7.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±2500
Charged-device model (CDM), per JEDEC specification JESD22C101 (2)
±1500
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range, TA = 25°C (unless otherwise noted)
MIN
NOM
MAX
Battery voltage
VBAT
2.9 (1)
3.6
5.5
UNIT
V
Analog supply voltage
VDD
1.65
1.8
1.95
V
I/O supply voltage 1.8V
IOVDD
1.62
1.8
1.98
V
I/O supply voltage 3.3V
IOVDD
3
3.3
3.6
V
TA
Operating free-air temperature
–40
85
°C
TJ
Operating junction temperature
–40
150
°C
(1)
Device is functional down to 2.7 V. See Battery Guard AGC
7.4 Thermal Information
THERMAL METRIC (1)
TAS2560
30 PINS
RθJA
Junction-to-ambient thermal resistance
56.8
RθJC(top)
Junction-to-case (top) thermal resistance
0.2
RθJB
Junction-to-board thermal resistance
8.1
ψJT
Junction-to-top characterization parameter
1.2
ψJB
Junction-to-board characterization parameter
8.1
RθJC(bot)
Junction-to-case (bottom) thermal resistance
n/a
(1)
6
UNIT
°C/W
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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SLASE86E – JUNE 2016 – REVISED DECEMBER 2017
7.5 Electrical Characteristics
VBAT = 3.6 V, VDD = IOVDD = 1.8 V, RESETZ = IOVDD, Gain = 16.4 dB, ERC = 14 ns, Boost Inductor = 2.2 µH, RL = 8 Ω +
33 µH, 1-kHz input frequency, 48-kHz sample rate for digital input, Class-H Boost Enabled, TA= 25°C, ILIM = 3 A (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
BOOST CONVERTER
Boost output voltage
Average voltage (w/o including ripple).
Boost converter switching frequency
Boost converter current limit
Boost converter max in-rush current
8.5
V
1.77
MHz
3
High Efficiency Mode: Max inductor inrush and startup current after enable
A
4
A
Normal Efficiency Mode: Max inductor inrush and startup current after enable
1.5
CLASS-D CHANNEL
Output voltage for full-scale digital
input
6.67
Load resistance (Load spec
resistance)
Class-D frequency
Class-D + boost efficiency
Class-D output current limit (Short
circuit protection)
3.6
8
44.1 × 8
48 × 8
Avg frequency in spread-spectrum mode
Fixed Frequency
81%
POUT = 0.44 W (sinewave) ROM Mode 1
87%
VBOOST = 8.5 V, OUT– shorted to VBAT,
VBOOST, GND
kHz
4
–2.5
Programmable channel gain accuracy
Ω
384
POUT = 3.5 W (sinewave) ROM Mode 1
Class-D output offset voltage in digital
input mode
VRMS
A
2.5
mV
±0.5
dB
Mute attenuation
Device in shutdown or device in normal
operation and MUTED
146
dB
VBAT Power Supply Rejection Ratio
(PSRR)
Ripple of 200 mVpp at 217 Hz
110
dB
AVDD Power Supply Rejection Ratio
(PSRR)
Ripple of 200 mVpp at 217 Hz
98
dB
1 kHz, POUT = 0.1 W
0.0085
%
1 kHz, Po = 0.5 W
0.0046
%
1 kHz, Po = 1 W
0.0035
%
1 kHz, Po = 3 W
0.0043
%
THD+N
Output integrated noise (20 Hz to 20
kHz) - 8 Ω
A-wt Filter, DAC modulator switching
Signal-to-noise ratio
Referenced to 1% THD+N at output, aweighted
Max output power, 3-A current limit
16.2
µV
110.6
dB
THD+N = 1%, 8-Ω Load
3.7
THD+N = 1%, 6-Ω Load
4.5
THD+N = 1%, 4-Ω Load
5
Startup pop
Digital input, a-weighted output
Output impedance in shutdown
RESETZ = 0 V
Startup time
Time taken from end of configuring device
to speaker output signal in I2C mode with
48ksps input
Shutdown time
Measured from time when device is
programmed in software shutdown mode
5
mV
10.4
kΩ
8
mS
100
µS
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Electrical Characteristics (continued)
VBAT = 3.6 V, VDD = IOVDD = 1.8 V, RESETZ = IOVDD, Gain = 16.4 dB, ERC = 14 ns, Boost Inductor = 2.2 µH, RL = 8 Ω +
33 µH, 1-kHz input frequency, 48-kHz sample rate for digital input, Class-H Boost Enabled, TA= 25°C, ILIM = 3 A (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
CURRENT SENSE
Current sense full scale
THD+N
Peak current which will give full scale
digital output 8-Ω load
1.25
Peak current which will give full scale
digital output 8-Ω load PDM
4.022
Peak current which will give full scale
digital output 6-Ω load
1.5
Peak current which will give full scale
digital output 4-Ω load
1.75
Current sense accuracy
IOUT = 354 mARMS (1 W)
Current sense gain drift over
temperature
–40°C to 85°C
Current sense gain linearity
From 15 mW to 3.5 W for fin=1 kHz
Distortion + Noise
SNR
APEAK
1.7%
4%
1.5%
POUT = 3 W (Load = 8 Ω + 33 µH)
0.196%
POUT = 3 W (Load = 4 Ω + 33 µH)
0.132%
20 Hz to 20 kHz, A-wt
–68
db
VOLTAGE SENSE
Voltage sense full scale
Peak voltage which will give full scale
digital output (1)
9.353
Peak voltage which will give full scale
digital output in PDM
16.65
Voltage sense accuracy
VOUT = 2.83 Vrms (1 W)
Voltage sense gain drift over
temperature
–40°C to 85°C
Voltage sense gain linearity
From 15 mW to 3.5 W for fin = 1 kHz
VPEAK
1%
1.2%
1%
INTERFACE
FMCLK
Voltage and current sense data rate
TDM/I2S
48
kHz
Voltage and current sense ADC OSR
TDM/I2S
64
OSR
MCLK frequency
0.512
49.15
MHz
POWER CONSUMPTION
Power consumption with digital input
and IV-sense disabled. Idle channel
condition
From VBAT, no signal
3.2
mA
From VDD, no signal
9.5
mA
Power consumption with digital input
and IV-sense enabled.
From VBAT, no signal
3.2
mA
From VDD, no signal
10.6
mA
Power consumption in hardware
shutdown
From VBAT, RESETZ = 0
0.1
µA
From VDD, RESETZ = 0
1.2
µA
Power consumption in software
shutdown. See Low Power Sleep
From VBAT
0.1
µA
From VDD
9.8
µA
DIGITAL INPUT / OUTPUT
VIH
High-level digital input voltage
VIL
Low-level digital input voltage
VIH
High-level digital input voltage
VIL
Low-level digital input voltage
(1)
8
All digital pins except SDA and SCL,
IOVDD = 1.8-V operation
All digital pins except SDA and SCL,
IOVDD = 3.3-V operation
0.65 ×
IOVDD
V
0.35 ×
IOVDD
2
V
V
0.45
V
Voltage Sense Fullscale = 1.176 Vrms × 10(DAC_GAIN/20)
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Electrical Characteristics (continued)
VBAT = 3.6 V, VDD = IOVDD = 1.8 V, RESETZ = IOVDD, Gain = 16.4 dB, ERC = 14 ns, Boost Inductor = 2.2 µH, RL = 8 Ω +
33 µH, 1-kHz input frequency, 48-kHz sample rate for digital input, Class-H Boost Enabled, TA= 25°C, ILIM = 3 A (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
All digital pins except SDA and SCL,
IOVDD = 1.8-V operation For IOL = 2 mA
and IOH = –2 mA
IOVDD –
0.45
All digital pins except SDA and SCL,
IOVDD = 3.3-V operation For IOL = 2 mA
and IOH = –2 mA
2.4
VOH
High-level digital output voltage
VOL
Low-level digital output voltage
VOH
High-level digital output voltage
VOL
Low-level digital output voltage
IIH
High-level digital input leakage current Input = IOVDD
–5
IIL
Low-level digital input leakage current
–5
TYP
MAX
UNIT
V
0.45
Input = Ground
V
V
0.4
V
0.1
5
µA
0.1
5
µA
MISCELLANEOUS
TTRIP
Thermal Trip Point
135
°C
7.6 I2C Timing Requirements
For I2C interface signals over recommended operating conditions (unless otherwise noted). (1)
PARAMETER
TEST CONDITION
Standard-Mode
MIN
TYP
Fast-Mode
MAX
MIN
100
0
TYP
UNITS
MAX
fSCL
SCL clock frequency
0
tHD;STA
Hold time (repeated) START
condition. After this period, the first
clock pulse is generated.
4
0.6
μs
tLOW
LOW period of the SCL clock
4.7
1.3
μs
tHIGH
HIGH period of the SCL clock
4
0.6
μs
tSU;STA
Setup time for a repeated START
condition
4.7
0.6
μs
tHD;DAT
Data hold time: For I2C bus
devices
tSU;DAT
Data set-up time
tr
0
SDA and SCL Rise Time
1000
20 + 0.1 ×
Cb
300
ns
tf
SDA and SCL Fall Time
300
20 + 0.1 ×
Cb
300
ns
tSU;STO
Set-up time for STOP condition
4
0.6
μs
tBUF
Bus free time between a STOP
and START condition
4.7
1.3
μs
Cb
Capacitive load for each bus line
250
0.9
kHz
3.45
(1)
0
400
100
400
μs
ns
400
pF
All timing specifications are specified by design but not tested at final test.
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7.7 I2S/LJF/RJF Timing in Master Mode
All specifications at TA = –40°C to 85°C, IOVDD data sheet limits, VIL and VIH applied, VOL and VOH measured at datasheet
limits, lumped capacitive load of 20 pF on output pins unless otherwise noted. (1)
SYMBOL
PARAMETER
CONDITIONS
IOVDD = 1.8 V
MIN
MAX
IOVDD = 3.3
V
MIN
UNIT
MAX
td(WS)
BCLK to WCLK delay
50% of BCLK to 50% of WCLK
35
25
ns
td(DO-WS)
WCLK to DOUT delay (For LJF Mode only)
50% of WCLK to 50% of DOUT
35
25
ns
td(DOBCLK)
BCLK to DOUT delay
50% of BCLK to 50% of DOUT
35
25
ns
ts(DI)
DIN setup
8
8
th(DI)
DIN hold
8
8
tr
Rise time
10%-90% Rise Time
8
4
ns
tf
Fall time
90%-10% Fall Time
8
4
ns
(1)
ns
ns
All timing specifications are measured at characterization but not tested at final test.
7.8 I2S/LJF/RJF Timing in Slave Mode
All specifications at TA = –40°C to 85°C, IOVDD data sheet limits, VIL and VIH applied, VOL and VOH measured at datasheet
limits, lumped capacitive load of 20 pF on output pins unless otherwise noted. (1)
SYMBOL
PARAMETER
CONDITIONS
IOVDD = 1.8 V
MIN
MAX
IOVDD = 3.3 V
MIN
MAX
UNIT
tH(BCLK)
BCLK high period
40
30
ns
tL(BCLK)
BCLK low period
40
30
ns
ts(WS)
(WS)
8
8
ns
th(WS)
WCLK hold
8
8
td(DO-WS)
WCLK to DOUT delay (For LJF Mode only)
50% of WCLK to 50% of DOUT
35
25
ns
td(DO-BCLK)
BCLK to DOUT delay
50% of BCLK to 50% of DOUT
35
25
ns
ts(DI)
DIN setup
8
8
th(DI)
DIN hold
8
8
tr
Rise time
10%-90% Rise Time
8
4
ns
tf
Fall time
90%-10% Fall Time
8
4
ns
(1)
ns
ns
ns
All timing specifications are measured at characterization but not tested at final test.
7.9 DSP Timing in Master Mode
All specifications at TA = –40°C to 85°C, IOVDD data sheet limits, VIL and VIH applied, VOL and VOH measured at datasheet
limits, lumped capacitive load of 20 pF on output pins unless otherwise noted. (1)
SYMBOL
PARAMETER
CONDITIONS
IOVDD = 1.8 V
MIN
MAX
IOVDD = 3.3
V
MIN
UNIT
MAX
td(WS)
BCLK to WCLK delay
50% of BCLK to 50% of WCLK
35
25
ns
td(DOBCLK)
BCLK to DOUT delay
50% of BLCK to 50% of DOUT
35
25
ns
ts(DI)
DIN setup
8
8
th(DI)
DIN hold
8
8
tr
Rise time
10%-90% Rise Time
8
4
ns
tf
Fall time
90%-10% Fall Time
8
4
ns
(1)
10
ns
ns
All timing specifications are measured at characterization but not tested at final test.
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7.10 DSP Timing in Slave Mode
All specifications at TA = –40°C to 85°C, IOVDD data sheet limits, VIL and VIH applied, VOL and VOH measured at datasheet
limits, lumped capacitive load of 20 pF on output pins unless otherwise noted. (1)
SYMBOL
PARAMETER
IOVDD=1.8V
CONDITIONS
MIN
IOVDD=3.3V
MAX
MIN
MAX
UNIT
tH(BCLK)
BCLK high period
40
30
ns
tL(BCLK)
BCLK low period
40
30
ns
ts(WS)
WCLK seutp
8
8
ns
th(WS)
WCLK hold
8
8
ns
td(DOBCLK)
BCLK to DOUT delay (For LJF Mode only)
ts(DI)
DIN setup
8
8
th(DI)
DIN hold
8
8
tr
Rise time
10%-90% Rise Time
8
4
ns
tf
Fall time
90%-10% Fall Time
8
4
ns
(1)
50% BCLK to 50% DOUT
35
25
ns
ns
ns
All timing specifications are measured at characterization but not tested at final test.
7.11 PDM Timing
All specifications at TA = –40°C to 85°C, IOVDD data sheet limits, VIL and VIH applied, VOL and VOH measured at datasheet
limits, lumped capacitive load of 20 pF on output pins unless otherwise noted. (1)
PARAMETER
IOVDD = 1.8 V
CONDITIONS
MIN
MAX
IOVDD = 3.3 V
MIN
MAX
UNIT
ts
DIN setup
20
20
th
DIN hold
3
3
tr
Rise time
10%-90% Rise Time
8
4
ns
tf
Fall time
90%-10% Fall Time
8
4
ns
(1)
ns
ns
All timing specifications are measured at characterization but not tested at final test.
SDA
tBUF
SCL
tLOW
th(STA)
tr
th(STA)
STO
STA
tHIGH
th(DAT)
tsu(STA)
tf
tsu(DAT)
tsu(STO)
STA
STO
2
Figure 1. I C Timing
WCLK
td(WS)
BCLK
td(DO-WS)
td(DO-BCLK)
DOUT
tS(DI)
th(DI)
DIN
Figure 2. I2S/LJF/RJF Timing in Master Mode
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WCLK
th(WS)
BCLK
tL(BCLK)
tH(BCLK)
ts(WS)
td(DO-WS)
td(DO-BCLK)
DOUT
ts(DI)
th(DI)
DIN
Figure 3. I2S/LJF/RJF Timing in Slave Mode
WCLK
td(WS)
td(WS)
BCLK
td(DO-BCLK)
DOUT
ts(DI)
th(DI)
DIN
Figure 4. DSP Timing in Master Mode
WCLK
th(ws)
BCLK
tH(BCLK)
ts(ws)
th(ws)
th(ws)
tL(BCLK)
td(DO-BCLK)
DOUT
ts(DI)
th(DI)
DIN
Figure 5. DSP Timing in Slave Mode
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tSU(PDM)
tHLD(PDM)
tSU(PDM)
tHLD(PDM)
PDM CLK
tr
tf
PDM IN
Falling Edge Captured
Rising Edge Captured
Figure 6. PDM Timing
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7.12 Typical Characteristics
VBAT = 3.6 V, VDD = IOVDD = 1.8 V, RESETZ = IOVDD, RL = 8 Ω + 33 µH, I2S digital input, Mode 2 (unless otherwise
noted).
THD+N(%)
2
1
0.5
10
5
VBAT=2.9V
VBAT=3.6V
VBAT=4.2V
VBAT=5.5V
2
1
0.5
THD+N(%)
10
5
0.2
0.1
0.05
0.2
0.1
0.05
0.02
0.01
0.005
0.02
0.01
0.005
0.002
0.001
0.001
0.002
0.001
0.001
0.010.02 0.05 0.1 0.2
Pout(W)
8 Ω + 33 µH
0.5
1
2 3 4 5 7 10
VBAT=2.9V
VBAT=3.6V
VBAT=4.2V
VBAT=5.5V
Freq = 1 kHz
4 Ω + 16 µH
Figure 7. THD+N vs Output Power
VBAT=2.9V
VBAT=3.6V
VBAT=4.2V
VBAT=5.5V
THD+N(%)
THD+N(%)
D002
0.02
0.01
0.005
0.02
0.01
0.005
0.002
0.001
20 30 50
0.002
0.001
20 30 50
100 200
500 1000 2000
Frequency(Hz)
10000
50000
D003
4 Ω + 16 µH
10000
50000
D004
POUT = 1 W
Figure 10. THD+N vs Frequency
Without ferrite bead
Loop closed after ferrite bead(PFFB)
Loop closed before ferrite bead
THD+N(%)
2
1
0.5
0.2
0.1
0.05
0.2
0.1
0.05
0.02
0.01
0.005
0.02
0.01
0.005
0.002
0.001
0.001
0.002
0.001
20 30 50
0.5
500 1000 2000
Frequency(Hz)
10
5
Without ferrite bead
Loop closed after ferrite bead(PFFB)
Loop closed before ferrite bead
8 Ω + 33 µH
100 200
}}
POUT = 1 W
0.010.02 0.05 0.1 0.2
Pout(W)
VBAT=2.9V
VBAT=3.6V
VBAT=4.2V
VBAT=5.5V
0.2
0.1
0.05
Figure 9. THD+N vs Frequency
THD+N(%)
2 3 4 5 7 10
Freq = 1 kHz
2
1
0.5
0.2
0.1
0.05
8 Ω + 33 µH
1
2 3 4 5 7 10
100 200
D005
Freq = 1 kHz
8 Ω + 33 µH
Figure 11. THD+N vs Output Power
14
1
10
5
2
1
0.5
2
1
0.5
0.5
Figure 8. THD+N vs Output Power
10
5
10
5
0.010.02 0.05 0.1 0.2
Pout(W)
D001
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500 1000 2000
Frequency(Hz)
10000
50000
D006
POUT = 1 W
Figure 12. THD+N vs Frequency
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Typical Characteristics (continued)
VBAT = 3.6 V, VDD = IOVDD = 1.8 V, RESETZ = IOVDD, RL = 8 Ω + 33 µH, I2S digital input, Mode 2 (unless otherwise
noted).
130
120
125
115
120
110
105
110
PSRR(dB)
PSRR(dB)
115
105
100
95
95
90
90
VBAT=3.0V
VBAT=3.6V
VBAT=5.4V
85
80
75
10
85
20 30 50 100 200 500 1000
Frequency(Hz)
10000
75
10
50000
D007
90
90
80
80
70
70
Efficiency(%)
100
60
50
40
VBAT=2.9V
VBAT=3.6V
VBAT=4.2V
VBAT=5.5V
30
20
10
0.01
8 Ω + 33 µH
0.05
0.2
Pout(W)
0.5 1
0
0.0005
2 3 45 7 10
4 Ω + 16 µH
90
80
80
70
70
Efficiency(%)
Efficiency(%)
90
40
VBAT=2.9V
VBAT=3.6V
VBAT=4.2V
VBAT=5.5V
30
20
10
8 Ω + 33 µH
0.5 1
0.05
0.2
Pout(W)
50
40
VBAT=2.9V
VBAT=3.6V
VBAT=4.2V
VBAT=5.5V
10
0
0.0005
D011
4 Ω + 16 µH
Figure 17. Efficiency vs Output Power High Efficiency
D010
60
20
SSM Mode
2 3 45 7 10
SSM Mode
30
2 3 45 7 10
0.5 1
Figure 16. Efficiency vs Output Power Low Inrush
100
0.05
0.2
Pout(W)
0.01
D009
Figure 15. Efficiency vs Output Power Low Inrush
0.01
VBAT=2.9V
VBAT=3.6V
VBAT=4.2V
VBAT=5.5V
10
50
D008
40
20
60
50000
50
30
SSM Mode
10000
60
100
0
0.0005
20 30 50 100 200 500 1000
Frequency(Hz)
Figure 14. AVDD Supply Ripple Rejection vs Frequency
100
0
0.0005
AVDD=1.8V
80
Figure 13. VBAT Supply Ripple Rejection vs Frequency
Efficiency(%)
100
0.01
0.05
0.2
Pout(W)
0.5 1
2 3 45 7 10
D012
SSM Mode
Figure 18. Efficiency vs Output Power High Efficiency
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Typical Characteristics (continued)
VBAT = 3.6 V, VDD = IOVDD = 1.8 V, RESETZ = IOVDD, RL = 8 Ω + 33 µH, I2S digital input, Mode 2 (unless otherwise
noted).
5
8
4.5
7
3.5
Output Power(W)
Output Power(W)
4
3
2.5
2
1.5
4
3
THD+N = 1%
THD+N = 10%
1
0.5
0
2.5
3
3.5
4
4.5
VBAT Supply(V)
5
0
2.5
5.5
3
4
4.5
VBAT Supply(V)
5
5.5
D014
4 Ω+ 16 µH
Figure 20. Output Power for 1% and 10% THD+N vs VBAT
Figure 19. Output Power for 1% and 10% THD+N vs VBAT
2
2
VBAT=2.9V
VBAT=3.6V
VBAT=4.2V
VBAT=5.5V
1.6
1.2
1.2
V/I Linearity (%)
0.8
VBAT=2.9V
VBAT=3.6V
VBAT=4.2V
VBAT=5.5V
1.6
0.4
0
-0.4
-0.8
0.8
0.4
0
-0.4
-0.8
-1.2
-1.2
-1.6
-1.6
-2
-2
0
0.5
1
1.5
2
2.5
3
Pout(W)
3.5
4
4.5
5
0
0.5
D015
8 Ω + 33 µH
1
1.5
2
2.5
3
Pout(W)
3.5
4
4.5
5
D016
4 Ω+ 16µH
Figure 21. V/I Linearity vs Output Power
16
3.5
D013
8 Ω+ 33 µH
V/I Linearity (%)
5
2
THD+N = 1%
THD+N = 10%
1
6
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Figure 22. V/I Linearity vs Output Power
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8 Parameter Measurement Information
Figure 23. TAS2560 Test Circuit
All typical characteristics for the devices are measured using the bench EVM and an Audio Precision SYS-2722
audio analyzer. A Programable Serial Interface Adaptor (PSIA) is used to allow the I2S interface to be driven
directly into the SYS-2722. SPEAKER OUT terminal is connected to Audio Precision analyzer inputs as shown
below. There is a differential to single ended (D2S) filter, with 1st order Passive pole at 120 kHz is added. This is
to ensure high performance Class-D amplifier sees a fully differential matched loading at its outputs and no
degradation in performance measured due to loading effects of AUX filter on Class-D outputs.
Figure 24. Differential To Single Ended (D2S) Filter
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9 Detailed Description
9.1 Overview
The TAS2560 is a low-power, high-performance boosted Class-D Audio amplifier that can be used in numerous
applications. The device features an ultra low-noise audio DAC and Class-D power amplifier which incorporates
speaker voltage and current sensing feedback. The TAS2560, from a 4.2 V, supply drives up to 5.6 W into a 4-Ω
speaker with 1% THDN or 3.7 W into an 8-Ω speaker with 1% THDN. The TAS2560 accepts input audio data
rates from 8 kHz to 96 kHz to fully support both speaker-phone and music applications. The MCLK frequency
range can be from 512 kHz to 49.15 Mhz. Also supported are crystal based MCLK frequencies of 6 Mhz, 12
Mhz, 13 Mhz, and 19.2 Mhz. Left + Right Input Mixing is available when used in a mono only application.
The multi-level Class-H boost converter generates the Class-D amplifier supply rail. When the audio signal
requires a output power below VBAT, the boost improves system efficiency by deactivating and connecting
VBAT directly to the Class-D amplifier supply. When higher audio output power is required, the boost quickly
activates and provides a much louder and much clearer signal than can be achieved in any standard amplifier
speaker system design approach. A boost inductor of 1uH can be used with a slight increase in boost ripple.
On-chip Battery Guard AGC system can limit audio power levels or even shutdown the TAS2560 to avoid an
undesired system reset as the supply voltage decays. The Class-D output switching frequency is synchronous
with the digital input audio sample rate to avoid left and right PWM frequency differences from beating in stereo
applications. PWM Edge rate control and Spread Spectrum features are available if further EMI reduction is
desired in the user’s system.
The interrupt request pin, IRQ, indicates a device error condition. The interrupt flag conditions are selectable via
I2C and include: thermal overload, Class-D over-current, VBAT level low, brownout, and clock error. The IRQ
signal is active-high for an interrupt request and high-Z during normal operation. This behavior can be changed
by a register setting to tri-state the pin during normal operation to allow the IRQ pin to be tied in parallel with
other active-low interrupt request pins on other devices in the system.
Stereo configuration can be achieved with two TAS2560 devices by using the ADDR pin to set different I2C
addresses in I2C mode. Refer to the General I2C Operation sections for more details.
9.2 Functional Block Diagram
DIN
DOUT
BCLK
WCLK
IV-SNS
ADCs
Temp
Sensor
Class-D
Amplifier
GND
Pop/Click
Over Current
Over Temp
Protection
OUT_P
OUT_N
optional
fb
fb
with
IV-Sense
PDMCLK
18
DAC
Charge
Pump
VSNS_P
VSNS_N
PGND
MCLK
System
Interface
+
Limiter
+
Boost
Control
VREG
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PGND_B
SAR
ADC
IRQ
SCL
SW
Boost
ADDR
RESETZ
SDA
VBOOST
2.9-5.5V
VBAT
1.8V
VDD
IOVDD
1.8V/3.3V
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9.3 Feature Description
9.3.1 General I2C Operation
The TAS2560 operates as an I2C slave over the IOVDD voltage range. It is adjustable to one of four I2C
addresses. This allows multiple TAS2560 devices in a system to connect to the same I2C bus. The I2C pins are
fail-safe. Therefore, if the part is not powered or is in shutdown the I2C pins will not have an impact the I2C bus
allowing it to remain useable.
The I2C address can then be set using the ADDR pin according to Table 1. The ADDR pin configures the two
LSB bits of the following 7-bit binary address A6-A0 of 10011xx. This permits the I2C address of TAS2560 to be
0x4C(7bit) through 0x4F(7-bit). For example, if the ADDR pin is shorted to ground the TAS2560 I2C address
would be 0x4C(7bit). This is equivalent to 0x98 (8-bit) for writing and 0x99 (8-bit) for reading.
Table 1. I2C Address Selection
ADDR Pin Conneciton
I2C Device Address
Short to GND
0x4C
Connection to GND using 22 kΩ
Resistor
0x4D
Connection to IOVDD using 22 kΩ
Resistor
0x4E
Short to IOVDD
0x4F
The I2C bus employs two signals, SDA (data) and SCL (clock), to communicate between integrated circuits in a
system. The corresponding pins on the TAS2560 for the two signals are SDA and SCL. The bus transfers data
serially, one bit at a time. The address and data 8-bit bytes are transferred most-significant bit (MSB) first. In
addition, each byte transferred on the bus is acknowledged by the receiving device with an acknowledge bit.
Each transfer operation begins with the master device driving a start condition on the bus and ends with the
master device driving a stop condition on the bus. The bus uses transitions on the data terminal (SDA) while the
clock is at logic high to indicate start and stop conditions. A high-to-low transition on SDA indicates a start, and a
low-to-high transition indicates a stop. Normal data-bit transitions must occur within the low time of the clock
period. Figure 25 shows a typical sequence.
The master generates the 7-bit slave address and the read/write (R/W) bit to open communication with another
device and then waits for an acknowledge condition. The device holds SDA low during the acknowledge clock
period to indicate acknowledgment. When this occurs, the master transmits the next byte of the sequence. Each
device is addressed by a unique 7-bit slave address plus R/W bit (1 byte). All compatible devices share the same
signals via a bi-directional bus using a wired-AND connection.
Use external pull-up resistors for the SDA and SCL signals to set the logic-high level for the bus. Use pull-up
resistors between 660 Ω and 4.7 kΩ. Do not allow the SDA and SCL voltages to exceed the device digital
interface supply voltage, IOVDD.
8- Bit Data for
Register (N)
8- Bit Data for
Register (N+1)
Figure 25. Typical I2C Sequence
There is no limit on the number of bytes that can be transmitted between start and stop conditions. When the last
word transfers, the master generates a stop condition to release the bus. Figure 25 shows a generic data
transfer sequence.
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9.3.2 Single-Byte and Multiple-Byte Transfers
The serial control interface supports both single-byte and multiple-byte read/write operations for all registers.
During multiple-byte read operations, the TAS2560 responds with data, a byte at a time, starting at the register
assigned, as long as the master device continues to respond with acknowledges.
The TAS2560 supports sequential I2C addressing. For write transactions, if a register is issued followed by data
for that register and all the remaining registers that follow, a sequential I2C write transaction has taken place. For
I2C sequential write transactions, the register issued then serves as the starting point, and the amount of data
subsequently transmitted, before a stop or start is transmitted, determines to how many registers are written.
9.3.3 Single-Byte Write
As shown in Figure 26, a single-byte data-write transfer begins with the master device transmitting a start
condition followed by the I2C device address and the read/write bit. The read/write bit determines the direction of
the data transfer. For a write-data transfer, the read/write bit must be set to 0. After receiving the correct I2C
device address and the read/write bit, the TAS2560 responds with an acknowledge bit. Next, the master
transmits the register byte corresponding to the device internal memory address being accessed. After receiving
the register byte, the device again responds with an acknowledge bit. Finally, the master device transmits a stop
condition to complete the single-byte data-write transfer.
Start
Condition
Acknowledge
A6
A5
A4
A3
A2
A1
A0
R/W ACK A7
Acknowledge
A6
I2C Device Address and
Read/Write Bit
A5
A4
A3
A2
A1
A0 ACK D7
Acknowledge
D6
Register
D5
D4
D3
Data Byte
D2
D1
D0 ACK
Stop
Condition
Figure 26. Single-Byte Write Transfer
9.3.4 Multiple-Byte Write and Incremental Multiple-Byte Write
A multiple-byte data write transfer is identical to a single-byte data write transfer except that multiple data bytes
are transmitted by the master device to the TAS2560 as shown in Figure 27. After receiving each data byte, the
device responds with an acknowledge bit.
Register
Figure 27. Multiple-Byte Write Transfer
9.3.5 Single-Byte Read
As shown in Figure 28, a single-byte data-read transfer begins with the master device transmitting a start
condition followed by the I2C device address and the read/write bit. For the data-read transfer, both a write
followed by a read are actually done. Initially, a write is done to transfer the address byte of the internal memory
address to be read. As a result, the read/write bit is set to a 0.
After receiving the TAS2560 address and the read/write bit, the device responds with an acknowledge bit. The
master then sends the internal memory address byte, after which the device issues an acknowledge bit. The
master device transmits another start condition followed by the TAS2560 address and the read/write bit again.
This time, the read/write bit is set to 1, indicating a read transfer. Next, the TAS2560 transmits the data byte from
the memory address being read. After receiving the data byte, the master device transmits a not-acknowledge
followed by a stop condition to complete the single-byte data read transfer.
20
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Repeat Start
Condition
Start
Condition
Acknowledge
A6
A5
A1
A0 R/W ACK A7
I2C Device Address and
Read/Write Bit
Acknowledge
A6
A5
A4
Not
Acknowledge
Acknowledge
A0 ACK
A6
A5
A1
A0 R/W ACK D7
D6
I2C Device Address and
Read/Write Bit
Register
D1
D0 ACK
Stop
Condition
Data Byte
Figure 28. Single-Byte Read Transfer
9.3.6 Multiple-Byte Read
A multiple-byte data-read transfer is identical to a single-byte data-read transfer except that multiple data bytes
are transmitted by the TAS2560 to the master device as shown in Figure 29. With the exception of the last data
byte, the master device responds with an acknowledge bit after receiving each data byte.
Repeat Start
Condition
Start
Condition
Acknowledge
A6
A0 R/W ACK A7
I2C Device Address and
Read/Write Bit
Acknowledge
A6
A5
Acknowledge
A0 ACK
A6
A0 R/W ACK D7
I2C Device Address and
Read/Write Bit
Register
Acknowledge
D0
ACK D7
First Data Byte
Acknowledge
Not
Acknowledge
D0 ACK D7
D0 ACK
Other Data Bytes
Last Data Byte
Stop
Condition
Figure 29. Multiple-Byte Read Transfer
9.3.7 PLL
PDMCLK
MCLK
BCLK
The TAS2560 on-chip PLL generates the necessary internal clock frequency for the audio DAC, I-V sensing
ADCs, and DSP. The programmability of the PLL allows TAS2560 operation from a wide variety of clocks that
may be available in the system application. The configurable PLL clock path is shown in Figure 30.
PLL_CLK_SRC
PLL_CLKIN
yP
P =1,2,«..,64
PLL_P_DIV
PLL_INPUT_CLK
×(J·D)
J =1,2,«..,63
PLL_MULT_J
D = 0000 to 9999
PLL_MULT_D
PLL_CLK
Figure 30. PLL_CLK Source and Generation
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The PLL input supports clocks varying from 512 kHz to 20 MHz and is register programmable to enable
generation of required PLL_CLK from various clocks with fine resolution. The PLL output clock PLL_CLK is
determined from PLL_CLKIN using the following formula:
2.._%.- =
2.._%.-+0 Û ,. &
2
(1)
The PLL multipliers and dividers are program using the register in Table 2. The table includes also the range of
values support and the default values. The D-divider value is 14-bits wide and is controlled by 2 registers. For
proper update of the D-divider value, PLL_DVAL_1 must be programmed first followed immediately by
PLL_DVAL_2. Unless the write to PLL_DVAL_2 is completed, the new value of D will not take effect.
Table 2. PLL Scaling Registers
PLL Divider
Register Name
Field
Range
Default
J
PLL_JVAL[6:0]
PLL_MULT_J
1, 2, 3, … 63
4
D
PLL_DVAL_1[5:0] &
PLL_DVAL_2[7:0]
PLL_MULT_D
0, 1, 2, ... 9999
0
P
PLL_CLKIN[5:0]
PLL_P_DIV
64,1,2,3, ... 63
1
Field PLL_CLK_SRC in register PLL_CLKIN configures the PLL clock input, PLL_CLKIN.
Table 3. PLL Clock Input Source
PLL_CLKIN[7:6] (PLL_CLK_SRC)
PLL_CLKIN Source
00
Input from BCLK
01
Input from MCLK (default)
10
Input from PDMLK
11
Reserved
The following conditions must be satisfied in the PLL configuration:
• If D = 0 (Integer Mode), the PLL clock input (PLL_CLKIN) must satisfy:
512 G*V Q
•
If D > 0(Fractional Mode), the PLL clock input (PLL_CLKIN) must satisfy:
10 /*V Q
•
2.._%.-+0
Q 20/*V
22
2.._%.-+0
Q 20/*V
22
The PLL output needs to be configured between 100 MHz and 200 MHz
Finally, the PLL_LOWF field in register PLL_JVAL must be configured properly based on the PLL_INPUT_CLK
intermediate clock frequency.
Table 4. PLL Clock Input Source
PLL_JVAL[7] (PLL_LOWF)
PLL_INPUT_CLK Condition
0
>= 1MHz (default)
1
< 1MHz
9.3.8 Clock Distribution
TAS2560 clocking tree is driven by the PLL output. In order for this block to properly function, the output of the
PLL (PLL_CLK) should be exactly 1024 times the sampling rate(Fs) or PLL_CLK=1204*Fs. For example,
PLL_CLK should be 49.152 MHz for 48 kHz sampling rate or 45.1584 MHz for 44.1 kHz sampling rate. The
following clocks that can be used for the audio interface clocking, see section Audio Digital I/O Interface for more
information.
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Table 5. Clocking Block Rates
Internal Clocking Node
Clocking Rate
NDIV_CLK
CLK_IN / 2
DAC_MOD_CLK
CLK_IN / 16
ADC_MOD_CLK
CLK_IN / 16
9.3.9 Clock Error Detection
TAS2560 has two clock error detection blocks that soft-mute the playback path when errors in the clocking
signals occur. Clock error detection 1 block is used for monitoring the audio interfaces. The clock error detection
2 block is used for monitoring the internal clocks for situations where the audio interface clocks are different from
the PLL input clock.
Table 6. Clock Error 1 Source
CLK_ERR_1[4] (CLK_E1_SRC)
Input Source
0
ASI_CLK (default)
1
PDM_CLK
Table 7. Clock Error 2 Source
CLK_ERR_1[3:2] (CLK_E2_SRC)
Input Source
00
DAC Modulator Clock (default)
01
ADC Modulator Clock
10
PLL Clock
11
Reserved
The clock error detection blocks may be disabled using field CLK_ERR1_EN and CLK_ERR2_EN. It is
recommend to disable these blocks. Both clock error blocks must be enable or disabled together to ensure
correct operation. When clock error blocks are enabled the idle channel detection used to reduce power
consumption must be disabled. It is recommended to use PurePath™ Console 3 Software TAS2560 Application
software to generate the device configuration files. The following code should be written to disable the idle
channel detection block.
#add in dsp memory write section after Device power up and a delay
#assuming B0_P0
w 98 00 32
w 98 6c 00 00 00 00 # disabling idle channel detect
w 98 00 00
Table 8. Clock Error 1 Enable
CLK_ERR_1[1] (CLK_E1_EN)
Clock Error Detection
0
disabled
1
enabled (default)
Table 9. Clock Error 2 Source
CLK_ERR_1[0] (CLK_E2_EN)
Clock Error Detection
0
disabled
1
enabled (default)
The detection block will trigger when the clock input to the specified detection block is not present within the
respective specified time of field CLK_ERR1_TIME or CLK_ERR2_TIME
Table 10. Clock Error 1 Timeout
CLK_ERR_2[5:3] (CLK_E1_TIME)
Timeout
000
11 ms
001
22 ms
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Table 10. Clock Error 1 Timeout (continued)
CLK_ERR_2[5:3] (CLK_E1_TIME)
Timeout
010
44 ms
011
87 ms
100
174 ms
101
350 ms
110
700 ms
111
1.2 s (default)
Table 11. Clock Error 2 Timeout
CLK_ERR_2[2:0] (CLK_E2_TIME)
Timeout
000
11 ms
001
22 ms
010
44 ms
011
87 ms
100
174 ms
101
350 ms
110
700 ms
111
1.2 s (default)
When a clocking error is detected the playback will be soft-mute at a rate set by field CLK_ERR_MR in register
CLOCK_ERR_CFG_2. The error will be recorded in the sticky register INT_DET_1 and can be reported on the
interrupt pin if mask in register INT_CFG_2
Table 12. Clock Error Soft-mute Ramp Rate
CLK_ERR_CFG_2[7:6] (CLK_ERR_MR)
Ramp-down Rate
00
15 us per dB (default)
01
30 us per dB
10
60 us per dB
11
120 us per dB
When the clock is available the system will perform a pop-free un-mute and resume operation.
9.3.10 Class-D Edge Rate Control
The edge rate of the Class-D output is controllable via I2C field EDGE_RATE in register EDGE_ISNS_BOOST.
This allows users the ability to adjust the switching edge rate of the Class-D amplifier, trading off some efficiency
for lower EMI. Table 13 lists the typical edge rates. The default edge rate of 14 ns passes EMI testing. The
default value is recommended but may be changed if required.
Table 13. Class-D Edge Rate Control
24
EDGE_ISNS_BOOST[7:5] (EDGE_RATE)
tR AND tF (TYPICAL)
000
Reserved
001
Reserved
010
29 ns
011
25 ns
100
14 ns (default)
101
13 ns
110
12 ns
111
11 ns
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9.3.11 IV Sense
The TAS2560 provides speaker voltage and current sense for real-time monitoring of loudspeaker behavior. The
VSNS_P and VSNS_N pins should be connected after any ferrite bead filter (or directly to the OUT_P and
OUT_N connections if no EMI filter is used). The V-Sense connections eliminate IR drop error due to packaging,
PCB interconnect or ferrite bead filter resistance. The V-sense connections are also used for post filter Class-D
feedback to correct for any IR-drop induced gain error or non-linearities due to the ferrite bead. It should be
noted that any interconnect resistance after the V-Sense terminals will not be corrected for. Therefore, it is
advised to connect the sense connections as close to the load as possible. Additionally, the v-sense pins are
used the close the feedback loop on the Class-D amplifier externally. This Post-Filter Feedback (PFFB)
minimized the THD introduced from the filter-beads used in the system.
SPK_P
SPK_N
fb
fb
VSENSE_P
VSENSE_N
Figure 31. V-Sense Connections
The I-Sense can be configured for three ranges and shown in Table 14. This should be set appropriately based
on the DC resistance of the speaker. I-Sense and V-Sense can additionally be powered down as shown in
Table 15 and Table 16. When powered down, the device will return null samples for the powered down sense
channels.
Table 14. I-Sense Current Range
EDGE_ISNS_BOOST[4:3]
(ISNS_SCALE)
Full Scale Current
Speaker Load Impedance
00
1.25 A (default)
8Ω
01
1.5 A
6Ω
10
1.75 A
4Ω
11
Reserved
Reserved
Table 15. I-Sense Power Down
PWR_CTRL_1[2] (MUTE_ISNS)
Setting
0
I-Sense is active (default)
1
I-Sense is powered down
Table 16. V-Sense Power Down
PWR_CTRL_1[1] (MUTE_VSNS)
Setting
0
V-Sense is active (default)
1
V-Sense is powered down
9.3.12 Boost Control
The TAS2560 internal processing algorithm automatically enables the boost when need. A look-ahead algorithm
monitors the battery voltage and the digital audio stream. When the speaker output approaches the battery
voltage the boost is enabled in-time to supply the required speaker output voltage. When the boost is no longer
required it is disable and bypassed to maximize efficiency. The boost can be configured in one of two modes.
The first is low in-rush (Class-G) supporting only boost on-off and has the lowest in-rush current. The second is
high-efficiency (Class-H) where the boost voltage level is adjusted to a value just above what is needed. This
mode is more efficient but has a higher in-rush current to quickly transition the levels. This can be configured
using Table 17.
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VSPK
Class-G
Class-H
Time
Figure 32. Boost Mode Signal Tracking Example
Table 17. Boost Mode
SPK_CTRL[4] (BST_MODE)
Boost Mode
0
Class-H - High efficiency
1
Class-G - Low in-rush (default)
9.3.13 Thermal Fold-back
The TAS2560 monitors the die temperature and prevents if from going over a set limit. When enabled a internal
controller will automatically adjust the signal path gain to prevent the die temperature from exceeding this limit.
This allows instantaneous peak power to be delivered to the speaker while limiting the continuous power to
prevent thermal shutdown. The configuration parameters for the thermal fold-back are part of the DSP core and
can be set using the PurePath™ Console 3 Software TAS2560 Application software for the TAS2560 part under
the Device Control Tab.
9.3.14 Battery Guard AGC
The TAS2560 monitors battery voltage and the audio signal to automatically decrease gain when the battery
voltage is low and audio output power is high. This provides louder audio while preventing early shutdown at
end-of-charge battery voltage levels. The battery tracking AGC starts to attenuate the signal once the voltage at
the Class-D output exceeds VLIM for a given battery voltage (VBAT). If the Class-D output voltage is below the
VLIM value, no attenuation occurs. If the Class-D output exceeds the VLIM value the AGC starts to attack the
signal and reduce the gain until the output is reduced to VLIM. Once the signal returns below VLIM plus some
hysteresis the gain reduction decays. The VLIM is constant above the user configurable inflection point. Below the
inflection point the VLIM is reduced by a user configurable slope in relation to the battery voltage. The attack time,
decay time, hysteresis, inflection point and VLIM/VBAT slope below the inflection point are user configurable. The
parameters for the Battery Tracking AGC are part of the DSP core and can be set using the PurePath™ Console
3 Software TAS2560 Application software for the TAS2560 part under the Device Control Tab. Below a VBAT
level of 2.9 V, the boost will turn on to ensure correct operation but results in increased current consumption. The
device is functional until the set brownout level is reached and the device shuts down. The minimum brownout
voltage is 2.7 V.
Output Voltage
Shutdown
Battery Guard
Speaker Guard
VLIMPeak
MT
VLI
Brownout
kin
rac
g
Inflection Point
VBAT
Figure 33. VLIM versus Supply Voltage (VBAT)
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When the VBAT voltage drops below the brownout threshold the TAS2560 will power-down to prevent damage.
The brownout can be reported on the interrupt pin. See section IRQs and Flags on how to enable this feature.
Once the device voltage returns again above the brownout limit the device will need to be externally re-powered,
see Brownout.
9.3.15 Configurable Boost Current Limit (ILIM)
The TAS2560 has a configurable boost current limit (ILIM). The default current limit is 3A but this limit may be set
lower based on selection of passive components connected to the boost. The TAS2560 supports 4 different
boost limits and can be set using Table 18.
Table 18. Current Limit Settings
EDGE_ISNS_BOOST[1:0] (BOOST_ILIM)
BOOST CURRENT LIMIT (A)
00
1.5
01
2.0
10
2.5
11
3.0 (default)
9.3.16 Fault Protection
The TAS2560 has several protection blocks to prevent damage. Those blocks including how to resume from a
fault are presented in this section.
9.3.16.1 Speaker Over-Current
The TAS2560 has an integrated over-current protection that is enabled once the Class-D is powered up. A fault
on the Class-D output causing a large current in the range of 3 A to 5 A triggers the over-current fault. Once the
fault is detected the TAS2560 disables the audio channel and powers down the Class-D amplifier. When an overcurrent event occurs, a status flag INT_OVRI is set. This register is sticky and the bit remains high for as long as
it is not read, or the device is not reset. The over-current event can also be used to generate an interrupt if
required. Refer to IRQs and Flags for more details. To re-enable the audio channel after a fault the Class-D the
device must be powered back up using field PWR_DEV, see Table 53.
9.3.16.2 Analog Under-Voltage
The TAS2560 device has an integrated undervoltage protection on the analog power supply lines VDD and
VBAT. The undervoltage limit fault is triggered when VDD is less than 1.5V or VBAT is less than 2.4 V. Once the
fault is detected the TAS2560 device will disable the audio channel and power down the Class-D amplifier. When
an under-voltage event occurs, a status flag INT_AUV is set. This register is sticky and the bit will remain high for
as long as it is not read, or the device is not reset. The undervoltage event can also be used to generate an
interrupt if required. Refer to IRQs and Flags for more details. To re-enable the audio channel after a fault the
Class-D the device must be powered back up using field PWR_DEV, see Table 53.
9.3.16.3 Die Over-Temperature
The TAS2560 has an integrated over temperature protection that is enabled once the Class-D is powered up. If
the device internal junction temperature exceeds the safe operating region it will trigger the over-temperature
fault. Once the fault is detected the TAS2560 disables the audio channel and powers down the Class-D amplifier.
By default the device is set to auto-retry and will attempt to power up the class-D every 100ms. If the overtermperature condition is still present it will shut-down again. The auto-retry can be disabled by setting the
register field PROT_OT_AR high. When an over-temperature event occurs, a status flag at INT_ORVT is set.
This register is sticky and the bit will remain high for as long as it is not read, or the device is not reset. The over
temperature event can also be used to generate an interrupt if required. Refer to IRQs and Flags section for
more details. To re-enable the audio channel after a fault the Class-D the device must be powered back up using
field PWR_DEV, see Table 53.
Table 19. Die Over-Temperature Auto-Retry
PROTECTION_CFG_1[2] (PROT_OT_AR)
Over Temperature Protection Auto-Retry
0
Enabled (default)
1
Disabled
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9.3.16.4 Clocking Faults
The TAS2560 has two clock error detection blocks. The first is used to monitor the Audio Serial Interfaces (ASI).
If a clock error is detected on the ASI interfaces audio artifacts can occur at the Class-D output. When enabled
the ASI clock error detection can soft-mute the device, then shutdown the Class-D and DSP core. The second
clock error detection block can monitor the internal DAC, ADC, and PLL clocks and used when the PLL clock
may be from a different source than the ASI clocks. When a clock error is detected the output is soft-muted and
the Class-D powered down. Information on configuring the error detection is in section Clock Error Detection
When a clocking error occurs the following sequence should be performed to restart the device.
• Clear the clock error interrupts by reading the sticky flags at register INT_DET_1 fields INT_CLK1 and
INT_CLK2
• Clear the power error field PWR_ERR in register PWR_CTRL_2
9.3.16.5 Brownout
The TAS2560 has an integrated brownout system to shutdown the device when the battery voltage drops to an
insufficient level. This user configurable level can be set under Device Control in the PurePath™ Console 3
Software TAS2560 Application. When brownout event occurs a status flag B0_P0_R38[3] is set. This register is
sticky and the bit remains high for as long as it is not read, or the device is not reset. The brownout event can
also be used to generate an interrupt if required. Refer to IRQs and Flags section for more details. Once the
battery voltage drops below the defined threshold the following actions occur.
• The audio playback is muted in a graceful soft-stepping manner
• DSP, clock dividers, and analog blocks are powered down.
• The brownout is reported in field PWR_ERR.
Once the device voltage returns again above the brownout limit the device will need to be externally re-powered
by
• Clear the brownout error interrupts by reading the sticky flags at register INT_DET_1 fields INT_BRNO
• Clear the field PWR_ERR in register PWR_CTRL_2.
Table 20. Power Down Error
PWR_CTRL_2[0] (PWR_ERR)
Power Down
0
No error, device normal operation
1
Brownout detected, device powered down
9.3.17 Spread Spectrum vs Synchronized
The Class-D switching frequency can be selected to work in three different modes of operations selected by
Table 21. This configuration needs to be done before powering up the audio channel. The first is a synchronized
mode where the Class-D frequency is synchronized to audio input sample rate. This is the default mode of
operation and can be used in stereo applications to avoid inter-modulation beating of the Class-D frequency from
multiple chips. The Class-D switching frequency in this mode can be configured as 384 kHz or 352.8 kHz. The
384 kHz frequency is the default mode of operation, and can be used for input signals running on clock rates of
48 kHz or its sub-multiples. For input signals running on clock rate of 44.1 kHz and its sub-multiples, the
switching frequency can be selected as 352.8 kHz using field RAMP_FREQ.
The second mode is fixed-frequency mode and the ramp is generated from the internal oscillator. The internal
oscillators across chips will vary slightly and this can create an intermodulation beating in application where more
than one TAS2560 is used.
The last mode is spread-spectrum mode and used to reduce wideband spectral content. This can improve EMI
emissions radiated by the speaker by spreading out the noise in the spectrum. In this mode, the Class-D
switching frequency varies +-5% or +-10% base on the Table 23 around the Table 22 around a 384 kHz center
frequency. These registers should be written before powering up the audio channel.
Table 21. Ramp Clock Mode
28
RAMP_CTRL[7:6] (RAMP_MODE)
Setting
00
Sync Mode - ramp generated from digital audio
clock (default)
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Table 21. Ramp Clock Mode (continued)
RAMP_CTRL[7:6] (RAMP_MODE)
Setting
01
Fixed Frequency Mode(FFM) - ramp generated
from internal oscillator
10
Spread Spectrum Mode(SSM) - ramp generated
from internal oscillator with spread spectrum
11
Reserved
Table 22. Ramp Clock Frequency
RAMP_CTRL[5:4] (RAMP_FREQ)
Setting
00
384 kHz - Use for Fs multiples of 48 kHz (default)
01
352.8 kHz - Use fpr Fs multiples of 44.1 kHz
10
Reserved
11
Reserved
Table 23. Ramp SSM Mode
RAMP_CTRL[1:0] (RAMP_FREQMOD)
Setting
00
Reserved
01
SSM mode enabled with ramp frequency modulated for ±5 %
(default)
10
SSM mode enabled with ramp frequency modulated for ±10 %
11
Reserved
9.3.18 IRQs and Flags
Internal device flags such as over-current, under-voltage, etc can be routed to the interrupt. If more than one flag
is asserted the interrupt output is the logical OR-ing of all flags. If multiple flags are asserted the host should then
query the interrupts sticky register to determine which event triggered the interrupt. For example, to route the
Brownout and Speaker Over Current flags to the IRQ pin the following register would be set INT_CFG_2=0x88.
Table 24. Interrupt Registers
Flag Description
Sticky Register Bit
Register to Enable Interrupt Mask
Speaker Over Current
INT_DET1[7] (INT_OVRC)
INT_CFG_2[7] (INTM_OVRC)
Speaker Over Voltage
INT_DET1[6] (INT_OVRV)
INT_CFG_2[6] (INTM_ORV)
Clock Error Detection 1
INT_DET1[5] (INT_CLK1)
INT_CFG_2[5] (INTM_CLK2)
Over Temperature
INT_DET1[4] (INT_OVRT)
INT_CFG_2[4] (INTM_OVRT)
INT_CFG_2[3] (INTM_BRNO)
Brownout
INT_DET1[3] (INT_BRNO)
Clock Error Detection 2
INT_DET1[2] (INT_CLK2)
INT_CFG_2[2] (INTM_CLK1)
Clock Halt Word Clock
INT_DET2[7] (INT_WCHLT)
INT_CFG_2[1] (INTM_WCHLT)
Clock Halt Modulator Clock
INT_DET2[6] (INT_MCHLT)
INT_CFG_2[0] (INTM_MCHLT)
The IRQ pin will be low during normal operation and indicate an interrupt with a high signal output. The output
drive options of the IRQ pin are shown in Table 25 and the output can be configured to support various use
cases such as external HiZ for or-ing multiple parts are directly driving the high-low output. When an IRQ event
occurs the IRQ can be set to toggle or pulse, see Table 28. Additionally the IRQ pin can be disabled, used as a
register controlled general purpose output, or a clock pin in PDM mode of operation. The various modes are
shown in Table 26. If using the IRQ pin as a general purpose output the value can be set per Table 27.
Table 25. IRQ Pin Drive
IRQ_PIN_CFG[7:5] (IRQ_DRIVE)
Output Drive IRQ Pin
001
Drive both high and low values
010
Open Drain, low-actively driven, high-HiZ (default)
011
Open Drain, low-actively driven, high-HiZ w/ pull-up
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Table 25. IRQ Pin Drive (continued)
IRQ_PIN_CFG[7:5] (IRQ_DRIVE)
Output Drive IRQ Pin
100
Open Drain, low-HiZ w/ pull-down, high-actively driven
101-111
Reserved
Table 26. IRQ Pin Mode
IRQ_PIN_CFG[2:0] (IRQ_PIN_MODE)
IRQ Pin Mode
001
Disabled and IO buffers powered down
010
Interrupt controlled output (default)
011
Reserved
100
General purpose output
101
PDM_IN_DIV output
110-111
Reserved
Table 27. IRQ GPO Value
IRQ_PIN_CFG[4] (IRQ_GPO_VAL)
IRQ Pin GPO Value
0
low (default)
1
high
Table 28. IRQ Indicator Mode
INT_CFG_1[7:6] (IRQ_IND_CFG
IRQ Pin Indicator Mode
00
Interrupt will be only one pulse(active high) of duration 2 ms.
(default)
01
Interrupt will be continuously pulsed with a duration 2ms and period
4ms until interrupt sticky flags are cleared by reading INT_DET_1
and INT_DET_2
01
Interrupt will remain high after interrupt is generated until interrupt
sticky flags are cleared by reading INT_DET_1 and INT_DET_2
11
Reserved
9.3.19 CRC checksum for I2C
The TAS2560 contain logic to verify that all write operations to the device were correctly received. This can be
used to detect a configuration error of the device in the event of a problem or collision on the I2C bus. On every
register write other than to the book switch register(B0_P0_R127) or page switch register(B0_Px_R0) will update
the 8-bit CRC checksum using the contents of the 8-bit register write data. Only register write operations will
update the CRC, register read operations will not change the CRC value. The CRC checksum register
CRC_CHECKSUM will return the current checksum from all previous write operations. The CRC checksum
register can be write to initialize the starting value and is initially defaulted to 0x00 on a reset. The polynomial
used for the CRC is 0x7 (CRC-8-CCITT I.432.1; ATM HEC, ISDN HEC and cell delineation, (1+x^1+x^2+x^8))
Since we are using CRC, order of writes will also affect CRC.
global gChecksum # To keep track of the checksum in firmware
# Function to init the local checksum as well as that inside device
function initChecksum():
gChecksum = 0
i2c_write(regChecksum, 0) # regChecksum is the register number of the checksum R/W reg in device
# Function to update the local checksum
function addToChecksum(addr, data):
if addr != regChecksum: # Checksum reg is ignored
# Update gChecksum with data. Ignore book/page registers
tempdata = gChecksum ^ inData
for ( i = 0; i < 8; i++ ):
if (( tempdata & 0x80 ) != 0 ):
tempdata = 0s
IOVDD
Tdelay >= 0s
Tdelay >= 0s
VDD
Figure 100. Power Supply Sequence for Power-Up and Power-Down
When the supplies have settled, the RESETZ terminal can be set HIGH to operate the device. Additionally the
RESETZ pin can be tied to IOVDD and the internal DVDD POR will perform a reset of the device. After a
hardware or software reset additional commands to the device should be delayed for 100uS to allow the OTP to
load. The above sequence should be completed before any I2C operation.
11.2.1 Boost Supply Details
The boost supply (VBAT) and associated passives need to be able to support the current requirements of the
device. By default, the peak current limit of the boost is set to 3 A. Refer to Configurable Boost Current Limit
(ILIM) for information on changing the current limit. A minimum of a 10 µF capacitor is recommended on the
boost supply to quickly support changes in required current. Refer to for the schematic.
The current requirements can also be reduced by lowering the gain of the amplifier, or in response to decreasing
battery through the use of the battery-tracking AGC feature of the TAS2560 described in Battery Guard AGC.
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12 Layout
12.1 Layout Guidelines
•
•
•
•
•
•
•
•
•
Place the boost inductor between VBAT and SW close to device terminals with no VIAS between the device
terminals and the inductor.
Place the capacitor between VBOOST close to device terminals with no VIAS between the device terminals
and capacitor.
Place the capacitor between VBOOST/VBAT and GND close to device terminals with no VIAS between the
device terminals and capacitor.
Do not use VIAS for traces that carry high current. These include the traces for VBOOST, SW, VBAT, PGND
and the speaker SPK_P, SPK_M.
Use epoxy filled vias for the interior pads.
Connect VSENSE_P, VSENSE_N as close as possible to the speaker.
– VSENSE_P, VSENSE_N should be connected between the EMI ferrite and the speaker if EMI ferrites are
used on SPK_P, SPK_M.
– EMI ferrites must be used if EMI capacitors are used on SPK_P, SPK_M.
Use a ground plane with multiple vias for each terminal to create a low-impedance connection to GND for
minimum ground noise.
Use supply decoupling capacitors as shown in Figure 98 and described in Power Supplies.
Place EMI ferrites, if used, close to the device.
12.2 Layout Example
GROUND PLANE
VBAT DECOUPLING
CAPACITOR
VBAT
GND
F
BOOST
INDUCTOR
VBAT
BOOST
CAPACITOR
GND
FERRITE
BEAD
SPK_P
E
D
C
B
FERRITE
BEAD
SPK_M
A
5
4
3
2
1
TWO INTERNAL
GND PLANES
VIA-IN-PAD
VIA TO GND PLANE
Figure 101. TAS2560 Board Layout
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13 Device and Documentation Support
13.1 Documentation Support
13.2 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
13.3 Trademarks
PurePath, E2E are trademarks of Texas Instruments.
13.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
13.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
14 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
14.1 Package Dimensions
The TAS2560 uses a 30-ball, 0.4-mm pitch WCSP package.
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Package Dimensions (continued)
TAS2560YFF
PACKAGE OUTLINE
YFF0030-C01
DSBGA - 0.625 mm max height
SCALE 4.500
DIE SIZE BALL GRID ARRAY
2.655
2.595
B
A
BUMP A1
CORNER
2.885
2.825
C
0.625 MAX
SEATING PLANE
0.30
0.12
0.05 C
BALL TYP
1.6 TYP
0.765
F
E
D
2
TYP
SYMM
C
B
A
0.4 TYP
0.3
0.2
C A B
1
30X
0.015
0.4
TYP
2
3
4
5
PKG
4222979/B 08/2016
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
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Package Dimensions (continued)
TAS2560YFF
EXAMPLE BOARD LAYOUT
YFF0030-C01
DSBGA - 0.625 mm max height
DIE SIZE BALL GRID ARRAY
(0.765)
(0.4) TYP
30X (
0.23)
1
2
3
4
5
A
(0.4) TYP
B
C
SYMM
D
E
F
PKG
LAND PATTERN EXAMPLE
SCALE:25X
0.05 MAX
( 0.23)
METAL
0.05 MIN
( 0.23)
SOLDER MASK
OPENING
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
NON-SOLDER MASK
DEFINED
(PREFERRED)
SOLDER MASK
DEFINED
SOLDER MASK DETAILS
NOT TO SCALE
4222979/B 08/2016
NOTES: (continued)
3. Final dimensions may vary due to manufacturing tolerance considerations and also routing constraints.
For more information, see Texas Instruments literature number SNVA009 (www.ti.com/lit/snva009).
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Package Dimensions (continued)
TAS2560YFF
EXAMPLE STENCIL DESIGN
YFF0030-C01
DSBGA - 0.625 mm max height
DIE SIZE BALL GRID ARRAY
(0.765)
(0.4) TYP
30X ( 0.25)
(R0.05) TYP
1
2
3
4
5
A
(0.4) TYP
B
METAL
TYP
C
SYMM
D
E
F
PKG
SOLDER PASTE EXAMPLE
BASED ON 0.1 mm THICK STENCIL
SCALE:30X
4222979/B 08/2016
NOTES: (continued)
4. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release.
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PACKAGE OPTION ADDENDUM
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10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TAS2560YFFR
ACTIVE
DSBGA
YFF
30
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 85
TAS2560
TAS2560YFFT
ACTIVE
DSBGA
YFF
30
250
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 85
TAS2560
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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