TLC2932AIPW

         SLES150 − OCTOBER 2005 D VCO (Voltage-Controlled Oscillator): D D D D − Complete Oscillator Using Only One External Bias Resistor (RBIAS) − Lock Frequency: 13 MHz to 32 MHz (VDD = 3 V +5%, TA = –205C to 755C, x1 Output) 13 MHz to 35 MHz (VDD = 3.3 V +5%, TA = –205C to 755C, x1 Output) 15 MHz to 55 MHz (VDD = 5 V +5%, TA = –205C to 755C, x1 Output) − Selectable Output Frequency D PFD (Phase Frequency Detector): High Speed, Edge-Triggered Detector with Internal Charge Pump Independent VCO, PFD Power-Down Mode Thin Small-Outline Package (14 Terminal) CMOS Technology Pin Compatible TLC2932IPW 14-PIN TSOP (PW PACKAGE) (TOP VIEW) LOGIC VDD SELECT VCO OUT FIN −A FIN −B PFD OUT LOGIC GND 1 2 3 4 5 6 7 14 13 12 11 10 9 8 VCO VDD RBIAS VCO IN VCO GND VCO INHIBIT PFD INHIBIT TEST description The TLC2932A is designed for phase-locked loop (PLL) systems and is composed of a voltage-controlled oscillator (VCO) and an edge-triggered type phase frequency detector (PFD). The oscillation frequency range of the VCO is set by an external bias resistor (RBIAS). The VCO has a 1/2 frequency divider at the output stage. The high speed PFD with internal charge pump detects the phase difference between the reference frequency input and signal frequency input from the external counter. Both the VCO and the PFD have inhibit functions, which can be used as power-down mode. Due to the TLC2932A high speed and stable oscillation capability, the TLC2932A is suitable for use as a high-performance PLL. AVAILABLE OPTIONS PACKAGE TA SMALL OUTLINE (PW) –20°C to 75°C TLC2932AIPW Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. Copyright  2005, Texas Instruments Incorporated  
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         SLES150 − OCTOBER 2005 functional block diagram FIN−A FIN−B PFD INHIBIT VCO IN 4 Phase Frequency Detector 5 9 6 BIAS PFD OUT VCO INHIBIT SELECT 12 13 10 Voltage Controlled Oscillator 3 VCO OUT 2 Terminal Functions TERMINAL I/O DESCRIPTION NAME NO. LOGIC VDD 1 SELECT 2 I VCO output frequency select. When SELECT is high, the VCO output frequency is ×1/2 and when low. The output frequency is ×1. VCO OUT 3 O VCO output. When the VCO INHIBIT is high, VCO output is low. FIN−A 4 I Input reference frequency f(REF IN) is applied to FIN−A. FIN−B 5 I Input for VCO external counter output frequency f(FIN−B). FIN−B is nominally provided from the external counter. PFD OUT 6 O PFD output. When the PFD INHIBIT is high, PFD output is in the high-impedance state. LOGIC GND 7 TEST 8 PFD INHIBIT 9 I PFD inhibit control. When PFD INHIBIT is high, PFD output is in the high-impedance state. VCO INHIBIT 10 I VCO inhibit control. When VCO INHIBIT is high, VCO output is low. Power supply for the internal logic. This power supply should be separated from VCO VDD to reduce cross-coupling between supplies. GND for the internal logic. Connect to GND. VCO GND 11 VCO IN 12 I GND for VCO. VCO control voltage input. Nominally the external loop filter output connects to VCO IN to control VCO oscillation frequency. RBIAS 13 I Bias supply. An external resistor (RBIAS) between VCO VDD and RBIAS supplies bias for adjusting the oscillation frequency range. VCO VDD 14 Power supply for VCO. This power supply should be separated from LOGIC VDD to reduce cross-coupling between supplies. 2 TI.COM POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251−1443 
         SLES150 − OCTOBER 2005 detailed description VCO oscillation frequency The VCO oscillation frequency is determined by an external register (RBIAS) connected between the VCO VDD and the BIAS terminals. The oscillation frequency and range depends on this resister value. For the lock frequency range refer to the recommended operating conditions. Figure 1 shows the typical frequency variation and VCO control voltage. VCO Oscillation Frequency − fOSC VCO Oscillation Frequency Range Bias Resistor (RBIAS) 1/2 VDD VCO Control Voltage (VCO IN) Figure 1. Oscillation Frequency VCO output frequency 1/2 divider The TLC2932A SELECT terminal sets the fOSC VCO output frequency as shown in Table 1. The 1/2 fOSC output should be used for minimum VCO output jitter. Table 1. VCO Output 1/2 Divider Function SELLECT VCO OUTPUT Low fOSC 1/2 fOSC High VCO inhibit function The VCO has an externally controlled inhibit function which inhibit the VCO output. A high level on the VCO INHIBIT terminal stops the VCO oscillation and powers down the VCO. The output maintains a low level during the power−down mode as shown in Table 2. Table 2. VCO Inhibit Function VCO INHIBIT VCO OSCILLATOR VCO OUT Low Active Active IDD(VCO) Normal High Stopped Low level Power Down PFD operation The PFD is a high-speed, edge-triggered detector with an internal charge pump. The PFD detects the phase difference between two frequency inputs supplied to FIN−A and FIN−B as shown in Figure 2. Normally the reference is supplied to FIN−A and the frequency from the external counter output is fed to FIN−B. For clock recovery PLL system, other types of phase detectors should be used. TI.COM 3 
         SLES150 − OCTOBER 2005 FIN−A FIN−B VOH PFD OUT HI-Z VOL Figure 2. PFD Function Timing Chart PFD inhibit control A high level on the PFD INHIBIT terminal places PFD OUT in the high-impedance state and the PFD stops phase detection as shown in Table 3. A high level on the PFD INHIBIT terminal can also be used as the power-down mode for the PFD. Table 3. VCO Output Control Function PFD INHIBIT DETECTION PFD OUT Low Active Active IDD(PFD) Normal High Stopped Hi−Z Power Down VCO block schematic PFD block schematic Charge Pump VDD FIN−A PFD OUT Detector FIN−B PFD INHIBIT 4 TI.COM POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251−1443 
         SLES150 − OCTOBER 2005 absolute maximum ratings over operating free-air temperature range (unless otherwise noted)† Supply voltage (each supply), VDD (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V Input voltage range (each input), VIN (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V to VDD + 0.5 V Input current (each input), IIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20 mA Output current (each output), IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20 mA Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –20°C to 75°C Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. All voltages are with respect to GND. 2. For operation above 25_C free-air temperature, derate linearly at the rate of 5.6 mW/°C. recommended operating conditions PARAMETERS VDD = 3 V Supply voltage (each supply, see Note 3) VDD = 3.3 V VDD = 5 V Input voltage, (inputs except VCO IN) Output current, (each output) VCO control voltage at VCO IN Lock frequency VDD = 3 V VDD = 3.3 V VDD = 5 V VDD = 3 V MIN 2.85 TYP 3 MAX 3.15 UNIT 3.135 3.3 3.465 V 4.75 5 5.25 0 0 0.9 13 VDD ±2 VDD 32 V mA V 13 35 MHz 15 55 2.2 5.1 VDD = 3.3 V 2.2 5.1 kΩ VDD = 5 V 2.2 5.1 NOTE 3: It is recommended that the logic supply terminal (LOGIC VDD) and the VCO supply terminal (VCO VDD) should be at the same voltage and separated from each other. Bias Resisitor electrical characteristics, VDD = 3 V, TA = 25°C (unless otherwise noted) VCO section PARAMETER TEST CONDITIONS VOH VOL High level output voltage VTH II Input threshold voltage at select, VCO inhibit ZI(VCOIN) IDD(INH) VCO IN input impedance VI = VDD or GND VCO IN = 1/2 VDD VCO supply current (inhibit) See Note 4 Low level output voltage Input current at Select, VCO inhibit IOH = –2 mA IOL = 2 mA MIN TYP MAX 2.4 V 0.3 0.9 UNIT 1.5 2.1 V ±1 µA 10 0.35 V MΩ 1 µA IDD(VCO) VCO supply current See Note 5 8.4 17 mA NOTES: 4. Current into VCO VDD, when VCO INHIBIT = high, PFD is inhibited. 5. Current into VCO VDD, when VCO IN = 1/2 VDD, RBIAS = 3.3 kΩ, VCOOUT = 15−pF Load, VCO INHIBIT = GND, and PFD INHIBIT = GND. TI.COM 5 
         SLES150 − OCTOBER 2005 electrical characteristics, VDD = 3 V, TA = 25°C (unless otherwise noted) (continued) PFD section PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VOH VOL High level output voltage Low level output voltage IOH = –2 mA IOL = 2 mA 2.4 IOZ VIH High impedance state output current PFD inhibit = high, VO = VDD or GND VIL VTH Low level input voltage at Fin−A, Fin−B CIN Input capacitance at Fin−A, Fin−B 5.6 pF ZIN IDD(Z) Input impedance at Fin−A, Fin−B 10 MΩ High level input voltage at Fin−A, Fin−B V ±1 µA 2.1 V 0.5 Input threshold voltage at PFD inhibit High impedance state PFD supply current V 0.3 0.9 1.5 V 2.1 See Note 6 µA 1 IDD(PFD) PFD supply current See Note 7 3 mA NOTES: 6. The current into LOGIC VDD when FIN−A and FIN−B = ground, PFD INHIBIT = VDD, PFD OUT open, and VCO OUT is inhibited. 7. The current into LOGIC VDD when FIN−A = 1 MHz and FIN−B = 1 MHz (VI(PP) = 3 V, rectangular wave), PFD INHIBIT = GND, PFD OUT open, and VCO OUT is inhibited. operation characteristics, VDD = 3 V, TA = 25°C (unless otherwise noted) VCO section Parameter TEST CONDITIONS RBIAS = 3.3 kΩ, VCO IN = 1/2 VDD MIN TYP MAX UNIT 17 25 33 MHz 10 µs 9 14 ns 7.6 12 ns fOSC fSTB Operation oscillation frequency tr tf Rise time CL = 15 pF Fall time CL = 15 pF 50% 55% Time to stable oscillation (see Note 8) Duty cycle at VCO OUT RBIAS = 3.3 kΩ, VCO IN = 1/2 VDD α (fOSC) Temperature coefficient of oscillation frequency VCO IN = 1/2 VDD, TA = –20°C to 75°C kSVS (fosc) Supply voltage coefficient of oscillation frequency VCO IN = 1/2 VDD, VDD = 4.75 V to 5.25 V 45% –0.264 %/°C 0.004 %/mV Jitter absolute (see Note 9) PLL jitter, N = 128 325 ps NOTES: 8. The time period to the stable VCO oscillation frequency after the VCO INHIBIT terminal is changed to a low level. 9. Jitter performance is highly dependent on circuit layout and external device characteristics. The jitter specification was made with a carefully deigned PCB with no device socket. PFD section PARAMETER TEST CONDITIONS MIN TYP MAX 17 UNIT fmax tPLZ Maximum operation frequency PFD output disable time from low level 22 50 ns tPHZ tPZL PFD output disable time from high level 21 50 ns PFD output enable time to low level 6.5 30 ns tPZH tr PFD output enable time to high level 7 30 ns Rise time CL = 15 pF 3.4 10 ns tf Fall time CL = 15 pF 1.9 10 ns 6 TI.COM POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251−1443 MH 
         SLES150 − OCTOBER 2005 electrical characteristics, VDD = 3.3 V, TA = 25°C (unless otherwise noted) VCO section PARAMETER TEST CONDITIONS VOH VOL High level output voltage VTH II Input threshold voltage at select, VCO inhibit ZI(VCOIN) IDD(INH) VCO IN input impedance VI = VDD or GND VCO IN = 1/2 VDD VCO supply current (inhibit) See Note 10 Low level output voltage Input current at Select, VCO inhibit IOH = –2 mA IOL = 2 mA MIN TYP MAX UNIT 2.64 V 0.33 1.05 1.65 V 2.25 V ±1 µA 10 MΩ 0.38 µA 1 IDD(VCO) VCO supply current See Note 11 10.8 22 mA NOTES: 10. Current into VCO VDD, when VCO INHIBIT = high, PFD is inhibited. 11. Current into VCO VDD, when VCO IN = 1/2 VDD, RBIAS = 3.3 kΩ, VCOOUT = 15−pF Load, VCO INHIBIT = GND, and PFD INHIBIT = GND. PFD section PARAMETER TEST CONDITIONS MIN TYP MAX 2.97 UNIT VOH VOL High level output voltage Low level output voltage IOH = –2 mA IOL = 2 mA IOZ VIH High impedance state output current PFD inhibit = high, VO = VDD or GND VIL VTH Low level input voltage at Fin−A, Fin−B CIN Input capacitance at Fin−A, Fin−B 5.6 pF ZIN IDD(Z) Input impedance at Fin−A, Fin−B 10 MΩ High level input voltage at Fin−A, Fin−B V ±1 µA 2.1 V 0.5 Input threshold voltage at PFD inhibit High impedance state PFD supply current V 0.2 1.05 1.65 See Note 12 V 2.25 1 µA IDD(PFD) PFD supply current See Note 13 3 mA NOTES: 12. The current into LOGIC VDD when FIN−A and FIN−B = ground, PFD INHIBIT = VDD, PFD OUT open, and VCO OUT is inhibited. 13. The current into LOGIC VDD when FIN−A = 1 MHz and FIN−B = 1 MHz (VI(PP) = 3.3 V, rectangular wave), PFD INHIBIT = GND, PFD OUT open, and VCO OUT is inhibited. operation characteristics, VDD = 3.3 V, TA = 25°C (unless otherwise noted) VCO section PARAMETER TEST CONDITIONS RBIAS = 3.3 kΩ, VCO IN = 1/2 VDD MIN TYP MAX UNIT 18 30 43 MHz 10 µs 14 ns 7.3 12 ns 50 55 fOSC fstb Operation oscillation frequency tr Rise time CL = 15 pF 8.5 tf fDUTY Fall time CL = 15 pF Duty cycle at VCO OUT RBIAS=3.3 kΩ, VCO IN = 1/2 VDD α (fOSC) Temperature coefficient of oscillation frequency VCO IN = 1/2 VDD, TA = –20°C to 75°C –0.28 7 %/°C kSVS(fOSC) Supply voltage coefficient of oscillation frequency VCO IN = 1/2 VDD, VDD = 4.75 V to 5.25 V 0.004 %/m V Time to stable oscillation (see Note 14) 45 % Jitter absolute (see Note 15) PLL jitter, N = 128 245 ps NOTES: 14. The time period to the stable VCO oscillation frequency after the VCO INHIBIT terminal is changed to a low level. 15. Jitter performance is highly dependent on circuit layout and external device characteristics. The jitter specification was made with a carefully deigned PCB with no device socket. TI.COM 7 
         SLES150 − OCTOBER 2005 operation characteristics, VDD = 3.3 V, TA = 25°C (unless otherwise noted) (continued) PFD section PARAMETER TEST CONDITIONS TYP MAX 21 50 ns PFD output disable time from high level 21 50 ns PFD output enable time to low level 5.8 30 ns 6.2 30 ns 3 10 ns 1.7 10 ns TYP MAX fmax tPLZ Maximum operation frequency tPHZ tPZL tPZH tr PFD output enable time to high level Rise time CL = 15 pF tf Fall time CL = 15 pF MIN 22 PFD output disable time from low level UNIT MHz electrical characteristics, VDD = 5 V, TA = 25°C (unless otherwise noted) VCO section PARAMETER TEST CONDITIONS VOH VOL High level output voltage IOH = –2 mA IOL = 2 mA VTH Input threshold voltage at select, VCO inhibit II ZI(VCOIN) Input current at Select, VCO inhibit VCO IN input impedance VI = VDD or GND VCO IN = 1/2 VDD IDD(inh) VCO supply current (inhibit) See Note 16 Low level output voltage MIN 4 1.5 UNIT V 2.5 0.5 V 3.5 V ±1 µA 1 µA 10 0.56 M( IDD(vco) VCO supply current See Note 17 28 50 mA NOTES: 16. Current into VCO VDD, when VCO INHIBIT = high, PFD is inhibited. 17. Current into VCO VDD, when VCO IN = 1/2 VDD, RBIAS = 3.3 kΩ, VCOOUT = 15−pF Load, VCO INHIBIT = GND, and PFD INHIBIT = GND. PFD section PARAMETER TEST CONDITIONS VOH VOL High level output voltage IOH = –2 mA IOL = 2 mA IOZ High impedance state output current VIH VIL High level input voltage at Fin−A, Fin−B VTH CIN Input threshold voltage at PFD inhibit Input capacitance at Fin−A, Fin−B 5.6 pF ZIN IDD(Z) Input impedance at Fin−A, Fin−B 10 MΩ Low level output voltage MIN TYP PFD inhibit = high, Vo = VDD or GND 0.2 V ±1 µA 4.5 V 1 1.5 See Note 18 UNIT V Low level input voltage at Fin−A, Fin−B High impedance state PFD supply current MAX 4.5 2.5 V 3.5 1 µA IDD(PFD) PFD supply current See Note 19 0.5 3 mA NOTES: 18. The current into LOGIC VDD when FIN−A and FIN−B = ground, PFD INHIBIT = VDD, PFD OUT open, and VCO OUT is inhibited. 19. The current into LOGIC VDD when FIN−A = 1 MHz and FIN−B = 1 MHz (VI(PP) = 5 V, rectangular wave), PFD INHIBIT = GND, PFD OUT open, and VCO OUT is inhibited 8 TI.COM POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251−1443 
         SLES150 − OCTOBER 2005 operation characteristics, VDD = 5 V, TA = 25°C (unless otherwise noted) VCO section PARAMETER TEST CONDITIONS RBIAS = 3.3 kΩ, VCO IN = 1/2 VDD MIN TYP MAX UNIT 37 57 75 MHz 10 us 10 ns 6.4 10 ns 50% 55% fOSC fSTB Operation oscillation frequency tr tf Rise time CL = 15 pF Fall time CL = 15 pF fDUTY α (fOSC) Duty cycle at VCO OUT RBIAS = 3.3 kΩ, VCO IN = 1/2 VDD Temperature coefficient of oscillation frequency VCO IN = 1/2 VDD, TA = –20°C to 75°C –0.346 %/°C kSVS(fOS C) Supply voltage coefficient of oscillation frequency VCO IN = 1/2 VDD, VDD = 4.75 V to 5.25 V 0.002 %/mV Time to stable oscillation (see Note 20) 7.5 45% Jitter absolute (see Note 21) PLL jitter, N = 128 145 ps NOTES: 20. The time period to the stable VCO oscillation frequency after the VCO INHIBIT terminal is changed to a low level. 21. Jitter performance is highly dependent on circuit layout and external device characteristics. The jitter specification was made with a carefully deigned PCB with no device socket. PFD section PARAMETER TYP MAX PFD output disable time from low level 20 40 ns tPHZ tPZL PFD output disable time from high level 20 40 ns 4 20 ns tPZH tr PFD output enable time to high level 4.3 20 ns Rise time CL = 15 pF 2.1 10 ns tf Fall time CL = 15 pF 1.3 10 ns fmax tPLZ Maximum operation frequency TEST CONDITIONS MIN 38 PFD output enable time to low level TI.COM UNIT MHz 9 
         SLES150 − OCTOBER 2005 PARAMETER MEASUREMENT INFORMATION 90% VCO OUT 90% 10% 10% tr tf Figure 3. VCO Output Voltage Waveform FIN−A VDD 50% GND FIN−B VDD 50% GND VDD PFD INHIBIT 50% 50% GND VDD 90% PFD OUT 90% 50% GND 50% 50% 50% 10% 10% tPZH tPHZ tPZL tr tPLZ tf Figure 4. PFD Output Voltage Waveform Table 4. PFD Output Test Conditions PARAMETER RL CL 1 kΩ 15 pF tPZH tPHZ tr tPZL tPLZ S1 S2 OPEN CLOSE CLOSE OPEN tf 10 TI.COM POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251−1443 
         SLES150 − OCTOBER 2005 PARAMETER MEASUREMENT INFORMATION Measurement Point S1 DUT RL CL S2 Figure 5. PFD Output Test Conditions TYPICAL CHARACTERISTICS VCO OSCILATION FREQUENCY VS VCO CONTROL VOLTAGE Vdd=3.0V Rbias=3.3kohm VCO OSCILATION FREQUENCY VS VCO CONTROL VOLTAGE Vdd=3.0V Rbias=2.2kohm 100 100 90 90 80 fosc − VCO Oscilation Frequency NHz fosc − VCO Oscilation Frequency NHz −25°C 25°C 70 85°C 60 50 40 30 20 80 −25°C 70 25°C 60 85°C 50 40 30 20 10 10 0 0 0 1 2 3 0 4 1 2 3 4 VCOIN − VCO Control Voltage − V VCOIN − VCO Control Voltage − V Figure 7. Figure 6. TI.COM 11 
         SLES150 − OCTOBER 2005 TYPICAL CHARACTERISTICS VCO OSCILATION FREQUENCY VS VCO CONTROL VOLTAGE Vdd=3.3V Rbias=2.2kohm VCO OSCILATION FREQUENCY VS VCO CONTROL VOLTAGE Vdd=3.0V Rbias=5.1kohm 100 100 90 90 80 80 fosc − VCO Oscilation Frequency NHz fosc − VCO Oscilation Frequency NHz −25°C 70 −25°C 25°C 60 85°C 50 40 30 20 25°C 70 85°C 60 50 40 30 20 10 10 0 0 0 1 2 3 0 4 1 3 4 Figure 9. Figure 8. VCO OSCILATION FREQUENCY VS VCO CONTROL VOLTAGE Vdd=3.3V Rbias=5.1kohm VCO OSCILATION FREQUENCY VS VCO CONTROL VOLTAGE Vdd=3.3V Rbias=3.3kohm 100 100 90 90 −25°C 80 fosc − VCO Oscilation Frequency NHz fosc − VCO Oscilation Frequency NHz 2 VCOIN − VCO Control Voltage − V VCOIN − VCO Control Voltage − V 25°C 70 85°C 60 50 40 30 20 80 −25°C 70 25°C 60 85°C 50 40 30 20 10 10 0 0 0 1 2 3 0 4 1 2 VCOIN − VCO Control Voltage − V VCOIN − VCO Control Voltage − V Figure 11. Figure 10. 12 TI.COM POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251−1443 3 4 
         SLES150 − OCTOBER 2005 TYPICAL CHARACTERISTICS VCO OSCILATION FREQUENCY VCO OSCILATION FREQUENCY VS VS VCO CONTROL VOLTAGE Vdd=5.0V Rbias=3.3kohm VCO CONTROL VOLTAGE Vdd=5.0V Rbias=2.2kohm 140 140 −25°C 120 120 fosc − VCO Oscilation Frequency NHz fosc − VCO Oscilation Frequency NHz 25°C 100 85°C 80 60 40 20 −25°C 100 25°C 85°C 80 60 40 20 0 0 0 1 2 3 4 5 0 6 1 2 3 4 5 6 5 6 VCOIN − VCO Control Voltage − V VCOIN − VCO Control Voltage − V Figure 13. Figure 12. VCO Oscilation frequency VCO OSCILATION FREQUENCY VS VCO CONTROL VOLTAGE Vs Vdd=5.0V Rbias=5.1kohm Bias resister Vdd=3V, VCOIN=1.5V, Ta=25’C 140 35 VCO Oscilationfrequency MHz fosc − VCO Oscilation Frequency NHz 120 100 −25°C 80 25°C 85°C 60 40 20 0 0 1 2 3 4 5 33 31 29 27 25 23 21 19 17 15 1 6 VCOIN − VCO Control Voltage − V 2 3 4 Rbias(kohm) Figure 15. Figure 14. TI.COM 13 
         SLES150 − OCTOBER 2005 TYPICAL CHARACTERISTICS VCO Oscilation frequency VCO Oscilation frequency Vs Bias resister Bias resister Vs Vdd=5V, VCOIN=2.5V, Ta=25’C Vdd=3.3V, VCOIN=1.6V, Ta=25’C 65 VCO Oscilationfrequency MHz VCO Oscilationfrequency MHz 40 38 36 34 32 30 28 26 24 22 20 1 2 3 4 5 63 61 59 57 55 53 51 49 47 45 1 6 2 3 5 6 Rbias(kohm) Rbias(kohm) Figure 17. Figure 16. Temperature Coefficient Oscilation frequency Temperature Coefficient Oscilation frequency Vs Vs Bias resister Bias resister Vdd=3.3V, VCOIN=1.6V, Ta=−20’C to 75’C Vdd=3V, VCOIN=1.5V, Ta=−20’C to 75’C 0.000 0.000 −0.050 −0.050 −0.100 −0.100 Temperature Coefficient of Oscilation frequency %/’C Temperature Coefficient of Oscilationfrequency %/’C 4 −0.150 −0.200 −0.250 −0.300 −0.350 −0.400 −0.450 −0.150 −0.200 −0.250 −0.300 −0.350 −0.400 −0.450 −0.500 −0.500 1 2 3 4 5 1 6 2 3 4 Rbias(kohm) Rbias(kohm) Figure 19. Figure 18. 14 TI.COM POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251−1443 5 6 
         SLES150 − OCTOBER 2005 TYPICAL CHARACTERISTICS VCO Oscilation frequency Temperature Coefficient Oscilation frequency Vs Vs VCO Supply Voltage Bias resister VCOIN=1.5V, Ta=25’C 0.000 35 −0.050 33 −0.100 31 −0.150 29 VCO Oscilation frequency MHz Temperature Coefficient of Oscilation frequency %/’C Vdd=5.0V, VCOIN=2.5V, Ta=−20’C to 75’C −0.200 −0.250 −0.300 −0.350 27 25 23 21 −0.400 19 −0.450 17 15 −0.500 1 2 3 4 5 2.5 6 2.7 2.9 3.3 3.5 Figure 21. Figure 20. VCO Oscilation frequency VCO Oscilation frequency Vs Vs VCO Supply Voltage VCO Supply Voltage VCOIN=2.5V, Ta=25’C VCOIN=1.6V, Ta=25’C 40 65 38 63 36 61 34 59 VCO Oscilation frequency MHz VCO Oscilation frequency MHz 3.1 VCO Supply Voltage (V) Rbias(kohm) 32 30 28 26 57 55 53 51 24 49 22 47 45 20 2.8 3 3.2 3.4 3.6 4 3.8 4.5 5 5.5 6 VCO Supply Voltage (V) VCO Supply Voltage (V) Figure 23. Figure 22. TI.COM 15 
         SLES150 − OCTOBER 2005 TYPICAL CHARACTERISTICS Supply Voltage Coefficient of Oscilation frequency Supply Voltage Coefficient of Oscilation frequency Vs Vs Bias resister Bias resister Vdd=3.0V to 3.6V,VCOIN=1.6V, Ta=25’C 0.100 0.100 0.080 0.080 0.060 0.060 Supply Voltage Coefficient of Oscilation frequency %/mV Supply Voltage Coefficient of Oscilation frequency %/mV Vdd=2.7V to 3.3V,VCOIN=1.5V, Ta=25’C 0.040 0.020 0.000 −0.020 −0.040 −0.060 −0.080 0.040 0.020 0.000 −0.020 −0.040 −0.060 −0.080 −0.100 −0.100 1 2 3 4 5 1 6 2 3 5 6 5 6 Figure 25. Figure 24. Recommended Lock frequency Supply Voltage Coefficient of Oscilation frequency Vs Vs Bias resister Bias resister Vdd=2.85V to 3.15V, Ta=−20’C to 75’C Vdd=4.5V to 5.5V,VCOIN=2.5V, Ta=25’C 0.100 50 0.080 45 0.060 40 RECOMMENDED LOCK FREQUENCY MHz Supply Voltage Coefficient of Oscilation frequency %/mV 4 Rbias (kohm) Rbias (kohm) 0.040 0.020 0.000 −0.020 −0.040 −0.060 35 30 25 20 15 10 5 −0.080 0 −0.100 1 2 3 4 5 1 6 2 3 4 Rbias (kohm) Rbias (kohm) Figure 27. Figure 26. 16 TI.COM POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251−1443 
         SLES150 − OCTOBER 2005 TYPICAL CHARACTERISTICS Recommended Lock frequency Recommended Lock frequency Vs Vs Bias resister Bias resister Vdd=4.75V to 5.25V, Ta=−20’C to 75’C Vdd=3.135V to 3.465V, Ta=−20’C to 75’C 80 50 45 70 RECOMMENDED LOCK FREQUENCY MHz RECOMMENDED LOCK FREQUENCY MHz 40 35 30 25 20 15 10 60 50 40 30 20 10 5 0 0 1 2 3 4 5 1 6 2 3 4 5 6 Rbias (kohm) Rbias (kohm) Figure 29. Figure 28. TI.COM 17 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) TLC2932AIPW ACTIVE TSSOP PW 14 90 RoHS & Green NIPDAU Level-1-260C-UNLIM -20 to 75 Y2932A TLC2932AIPWG4 ACTIVE TSSOP PW 14 90 RoHS & Green NIPDAU Level-1-260C-UNLIM -20 to 75 Y2932A TLC2932AIPWR ACTIVE TSSOP PW 14 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM -20 to 75 Y2932A (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of