TLV4062-Q1, TLV4082-Q1
TLV4062-Q1,
TLV4082-Q1
SNVSBU0 – OCTOBER
2020
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SNVSBU0 – OCTOBER 2020
TLV4062-Q1, TLV4082-Q1 Dual, Low-Power Comparator with Integrated Reference
1 Features
3 Description
•
•
The TLV4062-Q1 and TLV4082-Q1 are a family of
high-accuracy, dual-channel comparators featuring
low power and small solution size. The IN1 and IN2
inputs include hysteresis to reject brief glitches, thus
ensuring stable output operation without false
triggering.
•
•
•
•
•
•
•
•
Qualified for automotive applications
AEC-Q100 qualified with the following results:
– Device temperature grade 1: –40°C to 125°C
ambient operating temperature range
– Device HBM ESD classification level H1C
– Device CDM ESD classification level C4B
Wide supply voltage range: 1.5 V to 5.5 V
Two-channel detectors in small packages
High threshold accuracy: 1% over temperature
Precision hysteresis: 60 mV
Low quiescent current: 2 µA (typ)
Temperature range: –40°C to +125°C
Push-pull (TLV4062-Q1) and open-drain
(TLV4082-Q1) output options
Available in an SOT-23 package
2 Applications
•
•
•
•
Emergency call (eCall)
Automotive head unit
Instrument cluster
On-board (OBC) & wireless charger
The TLV4062-Q1 and TLV4082-Q1 have adjustable
INx inputs that can be configured by an external
resistor divider pair. When the voltage at the IN1 or
IN2 input goes below the falling threshold, OUT1 or
OUT2 is driven low, respectively. When IN1 or IN2
rises above the rising threshold, OUT1 or OUT2 goes
high, respectively.
The comparators have a very low quiescent current of
2 µA (typical) and provide a precise, space-conscious
solution for low-power, voltage monitoring. The
TLV4062-Q1 and TLV4082-Q1 operate from 1.5 V to
5.5 V, over the –40°C to +125°C temperature range.
Device Information (1)
PART NUMBER
TLV4062-Q1,
TLV4082-Q1
(1)
PACKAGE
SOT-23 (6)
2.90 mm × 1.60 mm
For all available packages, see the orderable addendum at
the end of the datasheet.
V+
V+
IN1
BODY SIZE (NOM)
VPU
Rpu1
IN1
OUT1
OUT1
VPU
IN2
Rpu2
IN2
OUT2
OUT2
VIT+
VIT+
V-
V-
Block Diagram for TLV4062-Q1
Block Diagram for TLV4082-Q1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
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Copyright
© 2020 Texas
Instruments
Incorporated
intellectual
property
matters
and other important disclaimers. PRODUCTION DATA.
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Table of Contents
1 Features............................................................................1
2 Applications..................................................................... 1
3 Description.......................................................................1
4 Revision History.............................................................. 2
5 Pin Configuration and Functions...................................3
6 Specifications.................................................................. 4
6.1 Absolute Maximum Ratings........................................ 4
6.2 ESD Ratings............................................................... 4
6.3 Recommended Operating Conditions.........................4
6.4 Thermal Information....................................................5
6.5 Electrical Characteristics.............................................5
6.6 Timing Requirements.................................................. 6
6.7 Timing Diagrams ........................................................ 6
6.8 Typical Characteristics................................................ 7
7 Detailed Description......................................................10
7.1 Overview................................................................... 10
7.2 Functional Block Diagrams....................................... 10
7.3 Feature Description...................................................11
7.4 Device Functional Modes..........................................11
8 Application and Implementation.................................. 13
8.1 Application Information............................................. 13
8.2 Typical Applications.................................................. 13
9 Power Supply Recommendations................................19
10 Layout...........................................................................20
10.1 Layout Guidelines................................................... 20
10.2 Layout Example...................................................... 20
11 Device and Documentation Support..........................21
11.1 Documentation Support.......................................... 21
11.2 Receiving Notification of Documentation Updates.. 21
11.3 Support Resources................................................. 21
11.4 Trademarks............................................................. 21
11.5 Electrostatic Discharge Caution.............................. 21
11.6 Glossary.................................................................. 21
4 Revision History
2
DATE
REVISION
NOTES
October 2020
*
Initial release.
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5 Pin Configuration and Functions
Top View
V+
1
6
IN1
OUT1
2
5
V-
OUT2
3
4
IN2
Figure 5-1. DBV Package, 6-Pin SOT-23
Table 5-1. Pin Functions
NAME
GND
OUT1
NO.
DBV
5
2
I/O
DESCRIPTION
—
Ground
O
OUT1 is the output for IN1. OUT1 is asserted (driven low) when the voltage at IN1 falls below VIT–. OUT1 is
deasserted (goes high) after IN1 rises higher than VIT+.
OUT1 is a push-pull output for the TLV4062 and an open-drain output for the TLV4082.
The open-drain device (TLV4082) can be pulled up to 5.5 V independent of V+; a pullup resistor is required for
this device.
OUT2
3
O
OUT2 is the output for IN2. OUT2 is asserted (driven low) when the voltage at IN2 falls below VIT–. OUT2 is
deasserted (goes high) after IN2 rises higher than VIT+.
OUT2 is a push-pull output for the TLV4062 and an open-drain output for the TLV4082.
The open-drain device (TLV4082) can be pulled up to 5.5 V independent of V+; a pullup resistor is required for
this device.
IN1
6
I
This pin is connected to the voltage to be monitored with the use of an external resistor divider.
When the voltage at this pin drops below the threshold voltage (VIT–), OUT1 is asserted.
IN2
4
I
This pin is connected to the voltage to be monitored with the use of an external resistor divider.
When the voltage at this pin drops below the threshold voltage (VIT–), OUT2 is asserted.
V+
1
I
Supply voltage input. Connect a 1.5-V to 5.5-V supply to V+ in order to power the device. Good analog design
practice is to place a 0.1-µF ceramic capacitor close to this pin (required for V+ < 1.5 V).
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6 Specifications
6.1 Absolute Maximum Ratings
over operating junction temperature range (unless otherwise noted)(1)
Voltage
Current
Temperature
(1)
(2)
(3)
MIN
MAX
VDD
–0.3
7
UNIT
OUT1, OUT2 (push-pull only)
–0.3
VDD + 0.3
OUT1, OUT2 (open-drain only)
–0.3
7
IN1, IN2
–0.3
V
7
IN1, IN2(2)
10
OUT1, OUT2
±20
Operating junction, TJ (3)
–40
125
Storage, Tstg
–65
150
mA
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under
Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.
Input terminals are diode-clamped to GND. Input signals that can swing 0.3V below GND must be current-limited to 10mA or less.
For low-power devices, the junction temperature rise above the ambient temperature is negligible; therefore, the junction temperature
is considered equal to the ambient temperature (TJ = TA).
6.2 ESD Ratings
VALUE
V(ESD)
(1)
Human-body model (HBM), per AEC Q100-002
Electrostatic discharge
(1)
UNIT
±2000
Charged-device model (CDM), per AEC Q100-011
V
±500
AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
6.3 Recommended Operating Conditions
over operating junction temperature range (unless otherwise noted)
MIN
Power-supply voltage
Input voltage
RPU
MAX
UNIT
1.5
5.5
V
0
5.5
V
Output voltage (push-pull only)
OUT1, OUT2
0
VDD + 0.3
V
Output voltage (open-drain only)
OUT1, OUT2
0
5.5
V
1.5
10,000
kΩ
–5
5
mA
Pullup resistor (open-drain only)
Current
4
IN1, IN2
NOM
CIN
Input capacitor
TJ
Junction temperature
OUT1, OUT2
0.1
–40
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25
µF
125
°C
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6.4 Thermal Information
TLV4062, TLV4082
THERMAL
METRIC(1)
DBV (SOT-23)
DRY (µSON)
6 PINS
6 PINS
UNIT
RθJA
Junction-to-ambient thermal resistance
193.9
306.7
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
134.5
174.1
°C/W
RθJB
Junction-to-board thermal resistance
39.0
173.4
°C/W
ψJT
Junction-to-top characterization parameter
30.4
30.9
°C/W
ψJB
Junction-to-board characterization parameter
38.5
171.6
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
65.2
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.5 Electrical Characteristics
all specifications are over the operating temperature range of –40°C < TJ < +125°C and 1.5 V ≤ VDD ≤ 5.5 V (unless
otherwise noted); typical values are at TJ = 25°C and VDD = 3.3 V
PARAMETER
VDD
TEST CONDITIONS
Input supply range
V(POR)
Power-on-reset
voltage(1)
MIN
TYP
1.5
VOL (max) = 0.2 V, IOL = 15 µA
MAX
V
0.8
V
VDD = 3.3 V, no load
2.09
5.80
VDD = 5.5 V, no load
2.29
6.50
IDD
Supply current (into VDD pin)
VIT+
Positive-going (rising) input
threshold voltage
V(INx) rising
VIT–
Negative-going (falling) input
threshold voltage
V(INx) falling
1.194
–1%
V
1.134
V
1%
VHYS
In-built Hysteresis
I(INx)
Input current
V(INx) = 0 V or VDD
60
VDD ≥ 1.5 V, ISINK = 0.4 mA
0.25
VOL
Low-level output voltage
VDD ≥ 2.7 V, ISINK = 2 mA
0.25
VDD ≥ 4.5 V, ISINK = 3.2 mA
High-level output voltage
(push-pull only)
VOH
Ilkg(OD)
(1)
Open-drain output leakage
current (open-drain only)
mV
15
nA
V
0.30
VDD ≥ 1.5 V, ISOURCE = 0.4 mA
0.8 VDD
VDD ≥ 2.7 V, ISOURCE = 1 mA
0.8 VDD
VDD ≥ 4.5 V, ISOURCE = 2.5 mA
0.8 VDD
High impedance, V(INx) = V(OUTx) = 5.5 V
µA
1%
–1%
–15
UNIT
5.5
–250
V
250
nA
Outputs are undetermined below V(POR).
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6.6 Timing Requirements
typical values are at TJ = 25°C and VDD = 3.3 V; INx transitions between 0 V and 1.3 V
MIN
NOM
MAX
UNIT
tPD(r)
INx (rising) to OUTx propagation delay
5.5
µs
tPD(f)
INx (falling) to OUTx propagation delay
10
µs
tSD
Startup delay(1)
570
µs
(1)
During power-on or when a VDD transient is below VDD(min), the outputs reflect the input conditions 570 µs after VDD transitions
through VDD(min).
6.7 Timing Diagrams
V+(min)
V+
V(POR)
VIT+
INx
VHYS
VIT±
Undefined
OUTx
tSD
tPD(f)
tPD(r)
tSD
Figure 6-1.
6
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6.8 Typical Characteristics
at TJ = 25°C with a 0.1-µF capacitor close to V+ (unless otherwise noted)
0.4
5
TJ = -40°C
TJ = 0°C
TJ = 105°C
TJ = 125°C
4
0.24
3.5
0.16
3
2.5
2
1.5
0.08
0
-0.08
-0.16
1
-0.24
0.5
-0.32
-0.4
-40
0
0
0.5
1
1.5
2
2.5
3
V+ (V)
3.5
4
IN1 V+ = 1.5 V
IN1 V+ = 5.5 V
IN2 V+ = 1.5 V
IN2 V+ = 5.5 V
0.32
VIT+ Deviation (%)
Supply Current (ɥA)
4.5
TJ = 25°C
TJ = 85°C
4.5
5
5.5
-25
-10
5
20 35 50 65
Temperature (°C)
80
95
110 125
Figure 6-3. INx Threshold (VIT+) Deviation vs Temperature
IN1 = IN2 = 1.5 V
Figure 6-2. Supply Current vs Supply Voltage
0.4
4500
IN1 V+ = 1.5 V
IN1 V+ = 5.5 V
IN2 V+ = 1.5 V
IN2 V+ = 5.5 V
0.32
4000
3500
0.16
3000
0.08
Count
0
-0.08
2500
2000
1500
-0.16
1000
-0.24
500
-0.32
1
0
0.8
110 125
0.6
95
0.4
80
0.2
20 35 50 65
Temperature (°C)
-0.2
5
-0.4
-10
-0.6
0
-25
-1
-0.4
-40
-0.8
VIT- Deviation (%)
0.24
VIT+ Accuracy (%)
Figure 6-4. INx Threshold (VIT–) Deviation vs Temperature
V+ = 5.5 V
Figure 6-5. INx Threshold (VIT+)
5500
5000
4500
4000
VOL (V)
Count
3500
3000
2500
2000
1500
1000
500
VIT- Accuracy (%)
1
0.8
0.6
0.4
0.2
0
-0.2
-0.4
-0.6
-0.8
-1
0
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
TJ = -40°C
TJ = 0°C
0
1
TJ = 25°C
TJ = 85°C
TJ = 105°C
TJ = 125°C
2
3
Output Sink Current (mA)
4
5
Figure 6-7. Output Voltage Low vs Output Current (V+ = 1.5 V)
V+ = 5.5 V
Figure 6-6. INx Threshold (VIT–)
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6.8 Typical Characteristics (continued)
at TJ = 25°C with a 0.1-µF capacitor close to V+ (unless otherwise noted)
0.5
0.5
TJ = -40°C
TJ = 0°C
TJ = 25°C
0.3
0.2
0.1
TJ = 85°C
TJ = 105°C
TJ = 125°C
0.3
0.2
0.1
0
0
0
1
2
3
Output Sink Current (mA)
4
5
Figure 6-8. Output Voltage Low vs Output Current (V+ = 3.3 V)
0
1
2
3
Output Sink Current (mA)
5
3.75
TJ = -40°C
TJ = 0°C
1.6
TJ = 25°C
TJ = 85°C
TJ = 105°C
TJ = 125°C
TJ = -40°C
TJ = 0°C
3.5
1.5
TJ = 25°C
TJ = 85°C
TJ = 105°C
TJ = 125°C
3.25
1.4
3
VOH (V)
1.3
1.2
1.1
2.75
2.5
2.25
1
0.9
2
0.8
1.75
0.7
0.1
1.5
0.2
0.3
0.4
0.5
0.6
Output Source Current (mA)
0.7
0.8
Figure 6-10. Output Voltage High vs Output Current (V+ = 1.5 V)
0
0.5
1
1.5
2
2.5
3
3.5
Output Source Current (mA)
4
4.5
5
Figure 6-11. Output Voltage High vs Output Current (V+ = 3.3 V)
5.75
6.1
TJ = -40°C
TJ = 0°C
TJ = 25°C
TJ = 85°C
TJ = 105°C
TJ = 125°C
IN1 V+ = 1.5 V
IN1 V+ = 5.5 V
IN2 V+ = 1.5 V
IN2 V+ = 5.5 V
5.9
5.5
5.7
5.25
tPD(r) (µs)
VOH (V)
4
Figure 6-9. Output Voltage Low vs Output Current (V+ = 5.5 V)
1.7
VOH (V)
TJ = -40°C
TJ = 0°C
TJ = 25°C
0.4
VOL (V)
VOL (V)
0.4
TJ = 85°C
TJ = 105°C
TJ = 125°C
5
5.5
5.3
5.1
4.75
4.9
4.5
0
0.5
1
1.5
2
2.5
3
3.5
Output Source Current (mA)
4
4.5
5
Figure 6-12. Output Voltage High vs Output Current (V+ = 5.5 V)
4.7
-40
-25
-10
5
20 35 50 65
Temperature (°C)
80
95
110 125
IN1 = IN2 = 0 V to 1.3 V
Figure 6-13. Propagation Delay from INx High to Output High
8
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6.8 Typical Characteristics (continued)
at TJ = 25°C with a 0.1-µF capacitor close to V+ (unless otherwise noted)
1150
14
V+ = 1.5 V
V+ = 5.5 V
1050
950
10
Startup Delay (ɥs)
tPD(f) (µs)
12
IN1 V+ = 1.5 V
IN1 V+ = 5.5 V
IN2 V+ = 1.5 V
IN2 V+ = 5.5 V
8
850
750
650
550
450
6
350
4
-40
-25
-10
5
20 35 50 65
Temperature (°C)
80
95
250
-40
110 125
-25
-10
5
20 35 50 65
Temperature (°C)
80
95
110 125
Figure 6-15. Startup Delay
IN1 = IN2 = 1.3 V to 0 V
Figure 6-14. Propagation Delay from INx Low to Output Low
55
55
TJ = -40°C
TJ = 0°C
TJ = +25°C
TJ = +85°C
TJ = +105°C
TJ = +125°C
Propagation Delay (ɥs)
45
40
35
45
30
25
20
15
10
40
35
30
25
20
15
10
5
5
0
0
0
3
6
9
12
15
18
Overdrive (%)
21
24
27
30
0
High-to-low transition occurs above the curve
TJ = -40°C
TJ = 0°C
TJ = +25°C
TJ = +85°C
TJ = +105°C
TJ = +125°C
0
3
6
9
12
15
18
Overdrive (%)
21
24
6
9
12
15
18
Overdrive (%)
21
24
27
30
27
30
Low-to-high transition occurs above the curve
Figure 6-18. Propagation Delay vs Overdrive (V+ = 1.5 V)
Figure 6-17. Propagation Delay vs Overdrive (V+ = 5.5 V)
Propagation Delay (ɥs)
35
32.5
30
27.5
25
22.5
20
17.5
15
12.5
10
7.5
5
2.5
0
3
High-to-low transition occurs above the curve
Figure 6-16. Propagation Delay vs Overdrive (V+ = 1.5 V)
Propagation Delay (ɥs)
TJ = -40°C
TJ = 0°C
TJ = +25°C
TJ = +85°C
TJ = +105°C
TJ = +125°C
50
Propagation Delay (ɥs)
50
35
32.5
30
27.5
25
22.5
20
17.5
15
12.5
10
7.5
5
2.5
0
TJ = -40°C
TJ = 0°C
TJ = +25°C
TJ = +85°C
TJ = +105°C
TJ = +125°C
0
3
6
9
12
15
18
Overdrive (%)
21
24
27
30
Low-to-high transition occurs above the curve
Figure 6-19. Propagation Delay vs Overdrive (V+ = 5.5 V)
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7 Detailed Description
7.1 Overview
The TLV4062-Q1 and TLV4082-Q1 are small, low quiescent current (I DD), dual-channel comparators. These
devices have high-accuracy, rising and falling input thresholds, and assert the output as shown in Table 7-1. The
output (OUTx) transitions high when the input (INx) is rising and greater than VIT+; the output (OUTx) will remain
high until the input is falling and drops below V IT- . The TLV4062-Q1 and TLV4082-Q1 can be used in systems
where multiple voltage rails are required to be monitored, or where one channel can be used as an early warning
signal and the other channel can be used as the system reset signal.
Table 7-1. TLV4062-Q1 and TLV4082-Q1 Truth Table
DEVICE
(VIT+, VIT-)
TLV4062-Q1
OUTPUT
TOPOLOGY
INPUT VOLTAGE
Push-Pull
1.194V, 1.134V
TLV4082-Q1
Open-Drain
OUTPUT
LOGIC
LEVEL
IN1 < VIT–
IN1 falling
OUT1 = low
IN2 < VIT–
IN2 falling
OUT2 = low
IN1 > VIT+
IN1 rising
OUT1 = high
IN2 > VIT+
IN2 rising
OUT2 = high
IN1 < VIT–
IN1 falling
OUT1 = low
IN2 < VIT–
IN2 falling
OUT2 = low
IN1 > VIT+
IN1 rising
OUT1 = high
IN2 > VIT+
IN2 rising
OUT2 = high
7.2 Functional Block Diagrams
V+
V+
IN1
VPU
Rpu1
IN1
OUT1
OUT1
VPU
IN2
Rpu2
IN2
OUT2
OUT2
VIT+
VIT+
V-
V-
Figure 7-1. TLV4062-Q1 (Push-Pull Output) Block
Diagram
10
Figure 7-2. TLV4082-Q1 (Open-Drain Output) Block
Diagram
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7.3 Feature Description
The TLV4062-Q1 (push-pull) and TLV4082-Q1 (open-drain) devices are micro-power, dual-channel comparators
that are capable of operating at low voltages. The TLV4062-Q1 and TLV4082-Q1 features high-accuracy
integrated reference thresholds with internal hysteresis of 60mV. If the voltage at the inputs, INx, rises above the
threshold, the outputs, OUTx, are driven high; if the voltage at the inputs, INx, falls below the threshold, the
outputs, OUTx, are driven low.
7.4 Device Functional Modes
When the voltage on V+ is lower than V(POR), both outputs are undefined and are not to be relied upon for proper
system function.
7.4.1 Inputs (IN1, IN2)
The TLV4062-Q1 and TLV4082-Q1 each have two comparators for voltage detection. Each comparator has one
external input; the other input is connected to the internal reference. The comparator rising threshold is designed
and trimmed to be equal to VIT+, and the falling threshold is trimmed to be equal to VIT–. The difference between
V IT+ and V IT- is referred to as the comparator hysteresis and is 60 mV. The integrated hysteresis makes the
TLV40x2 less sensitive to supply-rail nose and provides stable operation in noisy environments without having to
add external positive feedback to create hysteresis.
The comparator inputs can swing from ground to 5.5 V, regardless of the device supply voltage used. This
includes the instance when no supply voltage is applied to the comparator (V+ = 0 V). As a result, the TLV40x2
is referred to as fault tolerant, meaning it mainitains the same high input impedance when V+ is unpowered or
ramping up. Although not required in most cases, for extremely noisy applications, good analog design practice
is to place a 1-nF to 10-nF bypass capacitor at the comparator input in order to reduce sensitivity to transients
and layout parasitic.
For each INx input, the corresponding output (OUTx) is driven to logic low when the input voltage drops below V
When the voltage exceeds VIT+, the output (OUTx) is driven high; see Figure 6-1.
IT–.
7.4.2 Outputs (OUT1, OUT2)
The TLV4062-Q1 features push-pull output stages which eliminates the need for an external pull-up resistor, thus
saving board space, while providing a low impedance output driver. The logic high level of the outputs is
determined by the V+ pin voltage.
The TLV4082-Q1 features open-drain output stages which enables the output logic levels to be pulled-up to an
external source as high as 5.5 V independent of the supply voltage. Pull-up resistors must be used to hold these
lines high when the output goes to a high-impedance condition (not asserted). By connecting pull-up resistors to
the proper voltage rails, the outputs can be connected to other devices at correct interface voltage levels. To
ensure proper voltage levels, make sure to choose the correct pull-up resistor values. The pull-up resistor value
is determined by V OL, the sink current capability, and the output leakage current (I lkg(OD)). These values are
specified in the Section 6.5 table. By using wired-OR logic, OUT1 and OUT2 can be combined into one logic
signal. The Section 7.4.1 section describes how the outputs are asserted or de-asserted. See Figure 6-1 for a
description of the relationship between threshold voltages and the respective output.
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7.4.3 Switching Threshold and Hysteresis
The TLV40x2-Q1 transfer curve is show in Figure 7-3.
• VIT+ represents the rising input threshold that causes the comparator output to change from a logic low state
to a logic high state.
• VIT- represents the falling input threshold that causes the comparator output to change from logic high state to
a logic low state.
• VHYS represents the difference between VIT+ and VIT- and is 60 mV for TLV40x2-Q1.
VHYS = (VIT+) ± (VIT-)
VIT-
VIT+
Figure 7-3. TLV40x2 Transfer Curve
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8 Application and Implementation
Note
Information in the following applications sections is not part of the TI component specification, and TI
does not warrant its accuracy or completeness. TI’s customers are responsible for determining
suitability of components for their purposes. Customers should validate and test their design
implementation to confirm system functionality.
8.1 Application Information
The TLV4062-Q1 and TLV4082-Q1 are used as precision, dual-voltage monitors. The monitored voltage, V+
voltage, and output pullup voltage (TLV4082-Q1 only) can be independent voltages or connected in any
configuration.
In a typical device application, the outputs are connected to a reset or enable input of another device, such as a
digital signal processor (DSP), central processing unit (CPU), field-programmable gate array (FPGA), or
application-specific integrated circuit (ASIC); or the outputs are connected to the enable input of a voltage
regulator, such as a dc-dc or low-dropout (LDO) regulator.
8.1.1 Threshold Overdrive
Threshold overdrive is how much VIN1 or VIN2 exceeds the specified threshold, and is important to know because
a smaller overdrive results in a slower OUTx response. Threshold overdrive is calculated as a percent of the
threshold in question, as shown in Equation 1:
Overdrive = | (VIN1,2 / VIT – 1) × 100% |
(1)
where
•
•
VIT is either VIT– or VIT+, depending on whether calculating the overdrive for the falling input threshold or the
rising input threshold, respectively
VIN1,2 is the voltage at the IN1 or IN2 input
Figure 6-16 and Figure 6-17 illustrates the minimum detectable pulse on the INx inputs versus overdrive, and is
used to visualize the relationship that overdrive has on t PD(f) for high to low transitions. Figure 6-18 and Figure
6-19 is used to visual the relationship that overdrive has on tPD(r) for low to high transitions.
8.2 Typical Applications
8.2.1 Monitoring Two Separate Rails
The TLV40x2-Q1 series can be used to monitor two separate rails for over voltage detection. Over-voltage
monitoring is frequently used for system protection to alert the system to shutdown to prevent from damage. The
TLV4062-Q1 and TLV4082-Q1 also have adjustable INx inputs that can be configured to monitor voltages using
external resistor divider, as shown in Figure 8-1.
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V+ = 1.5 V to 6.5 V
0.1 F
TLV4082 Only
VMON1
VPULLUP
V+
R1
RPU1
VMON2
R3
IN1
OUT1
IN2
OUT2
To a reset or enable
input of the system
R2
RPU1
R4
To a reset or enable
input of the system
V-
Figure 8-1. Monitoring Two Separate Rails Schematic
8.2.1.1 Design Requirements
For this design, follow these requirements:
• VMON1 = 5 V and VMON2 = 3.3 V
• Set VMON1 over-voltage condition at 6.5 V
• Set VMON2 over-voltage condition at 4 V
8.2.1.2 Detailed Design Procedure
Configure the circuit as shown in Figure 8-1. Connect V+ to a power supply that is compatible with the input logic
level of the device connected to the output, and connect V- to ground. Resistors R 1 and R 2 create the overvoltage alert level at 6.5 V and resistors R 3 and R 4 create the over-voltage alert level at 4 V. When the V MON
rises, the resistor divider voltage crosses V IT+. This causes the comparator output to transition from a logic low
level (normal operation), to a logic high level. When V MON falls back down and the resistor divider voltage
crosses V IT- and signal that the system is approaching normal operating voltage levels once again. Make sure to
set VMON at a value below the absolute maximum voltage of the system in question.
(2)
where
•
•
•
R1/R3 and R2/R4 are the resistor values for the resistor divider connected to INx
VMON is the voltage source that is being monitored for an over-voltage condition
VIT+ is the rising edge threshold where the comparator output changes state from low to high
Rearranging Equation 2 and solving for R1 yields Equation 3. Set R2/R4 to a fixed value.
(3)
Using the nearest 1% resistors and the equation above, R1 = 300 kΩ, R2 =1.33 MΩ, R3 = 953 kΩ, and R4 = 407
kΩ. To get the trip point as close as possible to rising threshold, VIT+, VMON are adjusted so that VMON1 = 6.49 V
and V MON2 = 3.99 V. Using equation Equation 4 will determine when the output will fall low (crossing V IT-). The
over-voltage signal will go low when VMON1 = 6.16 V and VMON2 = 3.79 V.
(4)
where
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VMON is the voltage at which the resistor divider crosses the falling threshold, VIT-
Choose R TOTAL (equal to R1 + R2 & R3 + R4) so that the current through the divider is approximately 100 times
higher than the input current at the INx pins. The resistors can have high values to minimize current consumption
as a result of low input bias current without adding significant error to the resistive divider. For details on sizing
input resistors, see the Optimizing Resistor Dividers at a Comparator Input application report (SLVA450),
available for download from www.ti.com.
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8.2.1.3 Application Curve
Figure 8-2 shows the simulated results of monitoring two independent voltage rails for an over-voltage event.
6.49 V
6.14 V
VMON1
tPLH
tPHL
VPU
OUTx
0V
3.99 V
3.79 V
VMON2
tPLH
tPHL
Figure 8-2. Overvoltage Detection
8.2.2 Early Warning Detection
The TLV40x2-Q1 series can be used to monitor for early warning detection where OUT1 sends an early warning
alert signal and OUT2 sends an alert signal. This type of topology can be used for sensitive systems so a
warning alert can trigger before system shutdown occurs. The TLV4062-Q1 and TLV4082-Q1 also have
adjustable INx inputs that can be configured to monitor voltages using external resistor divider, as shown in
Figure 8-3.
VMON
0.1 F
TLV4082 Only
VPULLUP
V+
R1
RPU1
IN1
OUT1
IN2
OUT2
R2
R3
RPU1
To a reset or enable
input of the system.
To a reset or enable
input of the system.
V-
Figure 8-3. Early Warning Detection Schematic
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8.2.2.1 Design Requirements
For this design, follow these requirements:
• VMON = 3.3V
• Set the transition points VMON1 = 3.5 V and VMON2= 3.9 V
8.2.2.2 Detailed Design Procedure
Configure the circuit as shown in Figure 8-3. Connect V+ to a 3.3 V power rail and connect V- to ground. The
resistor network is used to create an early warning detection signal at OUT2, which will give a warning alert as V
MON approaches the max limit, changing state from a logic low to a logic high. OUT2 will stay high for a longer
period until V MON is no longer in the warning zone. OUT1 will be used when V MON reaches the max limit and
transition from a logic low to a logic high. This type of topology can be used for sensitive systems where
advanced notice of the power supply over-voltage detection is needed.
Use V MON2, the threshold for a low to high transition at OUT2, I IN_RES, the current flow through the resistor
network, to determine the minimum total resistance necessary to achieve the current consumption specification.
(5)
where
•
•
VMON2 is the target voltage at which OUT2 goes high when VMON rises
IIN_RES is the current flowing through the resistor network
After R TOTAL is determined, R3 can be calculated using Equation 6. Select the nearest 1% resistor value for R3.
In this case, 845 kΩ is the closest value.
(6)
Use the voltage divider equation Equation 7 The voltage divider equation controls the V
OUT1 will transition from a logic high to a logic low.
MON1
voltage at which
(7)
where
•
VMON1 is the target voltage at which OUT1 goes low when VMON falls
Rearranging Equation 7 to solve for R2 yields Equation 8 Select the nearest 1% resistor value for R2. In this
case, 55.6kΩ is the closest value.
(8)
Use Equation 9 to calculate R1. Select the nearest 1% resistor value for R1. In this case, 1.87 MΩ is a 1%
resistor.
(9)
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8.2.2.3 Application Curve
Figure 8-4 shows the simulated results of the early warning detection circuit. OUT2 provides the early warning
alert whereas OUT1 provides the warning alert.
VPU
OUT1
0V
3.915 V
3.718 V
3.674 V
3.49 V
VMON
VPU
OUT2
0V
Figure 8-4. Early Warning Detection
8.2.3 Additional Application Information
8.2.3.1 Pull-Up Resistor Selection
For the TLV4082-Q1 (open-drain outputs), care should be taken in selecting the pull-up resistor (R PU) value to
ensure proper output voltage levels. First, consider the required output high logic level requirement of the logic
device that is being drive by the comparator when calculating the maximum R PU value. When in a logic high
output state, the output impedance of the comparator is very high but there is finite amount of leakage current
that needs to be accounted for. Use the | I lkg(OD)| from the EC table and the V IH (min) of the logic device being
driven by the TLV4082 to determine RPU using Equation 10 .
(10)
Next determine the minimum value for R PU by using the V IL (max) of the logic device being driven by the
TLV4082-Q1. In order for the comparator output to be recognized as a logic low, V IL (max) is used to determine
the upper boundary of the comparator's V OL. V OL (max) for the comparator is available in the EC table from
specific sink current levels and can be found from the V OUT versus I SINK curve in the Typical Applications curve.
A good design practice is to choose a value for V OL that is ½ the value of V IL for the input logic device. The
corresponding sink current and VOL value will be needed to calculate the minimum RPU. This method will ensure
enough noise margin for the logic low level. With i SINK determined and the corresponding R PU obtained, the
minimum ) is calculated with Equation 11.
(11)
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Since the range of possible RPU values is large, a value between 5 kΩ and 100kΩ is generally recommended. A
smaller R PU value provides faster output transition time and better noise immunity, while a larger R PU value
consumes less power when in a logic low output state.
8.2.3.2 INx Capacitor
Although not required in most cases, for extremely noisy applications, place a 1 nF to 100 nF bypass capacitor
from the comparator input (INx) to the (V-) for good analog design practice. This capacitor placement reduces
device sensitivity to transients.
9 Power Supply Recommendations
The TLV4062-Q1 and TLV4082-Q1 are designed to operate from an input voltage supply range between 1.5 V
and 5.5V. An input supply capacitor is not required for this device; however, good analog practice is to place a
0.1-µF or greater capacitor between the V+ pin and the GND pin. This device has a 7-V absolute maximum
rating on the V+ pin. If the voltage supply providing power to V+ is susceptible to any large voltage transient that
can exceed 7 V, additional precautions must be taken.
For applications where INx is greater than 0 V before V+, and is subject to a startup slew rate of less than 200
mV per 1 ms, the output can be driven to logic high in error. To correct the output, cycle the INx lines below V IT–
or sequence INx after V+.
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10 Layout
10.1 Layout Guidelines
Place the V+ decoupling capacitor close to the device.
Avoid using long traces for the V+ supply node. The V+ capacitor, along with parasitic inductance from the
supply to the capacitor, can form an LC tank circuit that creates ringing with peak voltages above the maximum
V+ voltage.
10.2 Layout Example
CIN
VDD
VMON1
R1
VPU
1
6
OUT1
2
5
OUT2
3
4
R5
R2
R4
R6
VPU
R3
VMON2
Figure 10-1. Example SOT-23 Layout
20
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11 Device and Documentation Support
11.1 Documentation Support
11.1.1 Related Documentation
11.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
11.3 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
11.4 Trademarks
TI E2E™ is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.
11.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
11.6 Glossary
TI Glossary
This glossary lists and explains terms, acronyms, and definitions.
Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TLV4062QDBVRQ1
ACTIVE
SOT-23
DBV
6
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
2DK5
TLV4082QDBVRQ1
ACTIVE
SOT-23
DBV
6
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
2DJ5
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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